MP03XXX360 MP03XXX360 Dual Thyristor, Thyristor/Diode Module Replaces January 2000 version, DS4484-5.0 DS4484-6.1 June 2001 FEATURES ■ Dual Device Module ■ Electrically Isolated Package ■ Pressure Contact Construction ■ International Standard Footprint ■ Alumina (Non Toxic) Isolation Medium KEY PARAMETERS VDRM IT(AV) ITSM(per arm) Visol 1800V 355A 8100A 3000V G1 K1 K2 G2 1 2 3 APPLICATIONS Circuit type code: HBT ■ Motor Control ■ Controlled Rectifier Bridges ■ Heater Control ■ AC Phase Control G1 K1 1 2 3 Circuit type code: HBP K2 G2 VOLTAGE RATINGS Type Number MP03XXX360-18 MP03XXX360-16 MP03XXX360-14 MP03XXX360-12 MP03XXX360-10 MP03XXX360-08 Repetitive Peak Voltages VDRM VRRM V 1800 1600 1400 1200 1000 800 1 2 3 Conditions Circuit type code: HBN Fig. 1 Circuit diagrams Tvj = 0˚ to 125˚C, IDRM = IRRM = 30mA VDSM = VRSM = VDRM = VRRM + 100V respectively 1 2 3 Lower voltage grades available. XXX shown in the part number above represents the circuit configuration required. K2 G2 G1 K1 ORDERING INFORMATION Order As: MP03HBT360-XX MP03HBN360-XX MP03HBP360-XX XX shown in the part number above represents the VRRM/100 slection required, e.g. MP03HBT360-17 Note: When ordering, please use the complete part number. Outline type code: MP03 Fig. 2 Electrical connections - (not to scale) 1/9 www.dynexsemi.com MP03XXX360 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Symbol IT(AV) IT(RMS ITSM I2t ITSM I2t Visol Parameter Mean on-state current Test Conditions Max. Units Tcase = 75˚C 355 A Tcase = 85˚C 312 A Theatsink = 75˚C 276 A Theatsink = 85˚C 242 A 560 A 10ms half sine, Tj = 130˚C 8.1 kA VR = 0 0.33x106 A2s 10ms half sine, Tj = 130˚C 6.5 kA VR = 50% VDRM 0.21x106 A2s 3000 V Half wave resistive load Tcase = 75˚C RMS value Surge (non-repetitive) on-current I2t for fusing Surge (non-repetitive) on-current I2t for fusing Commoned terminals to base plate. AC RMS, 1 min, 50Hz Isolation voltage THERMAL AND MECHANICAL RATINGS Test Conditions Parameter Symbol Min. Max. Units Thermal resistance - junction to case dc - 0.105 ˚C/kW (per thyristor or diode) Half wave - 0.115 ˚C/kW 3 Phase - 0.12 ˚C/kW Thermal resistance - case to heatsink Mounting torque = 5Nm - 0.05 ˚C/kW (per thyristor or diode) with mounting compound Tvj Virtual junction temperature Reverse (blocking) - 135 ˚C Tstg Storage temperature range –40 135 ˚C Mounting - M5 - 5(44) Nm (lb.ins) Electrical connections - M8 - 9(80) Nm (lb.ins) - 950 g Rth(j-c) Rth(c-hs) - - Screw torque Weight (nominal) - - 2/9 www.dynexsemi.com MP03XXX360 DYNAMIC CHARACTERISTICS - THYRISTOR Parameter Symbol Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tj = 130˚C - 50 mA dV/dt Linear rate of rise of off-state voltage To 67% VDRM, Tj = 130˚C - 1000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 600A, gate source 10V, 5Ω - 500 A/µs IRRM/IDRM tr = 0.5µs, Tj = 130˚C VT(TO) rT Threshold voltage At Tvj = 135˚C. See note 1 - 0.78 V On-state slope resistance At Tvj = 135˚C. See note 1 - 0.79 mΩ Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. GATE TRIGGER CHARACTERISTICS AND RATINGS Parameter Symbol Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 150 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 10 A PGM Peak gate power See table fig. 5 100 W PG(AV) Mean gate power 5 W - - 3/9 www.dynexsemi.com MP03XXX360 1600 20 Measured under pulse conditions I2t = Î2 x t 2 Peak half sine wave on-state current - (kA) 1200 1000 800 200 10 600 400 200 0 0.6 15 1.0 0.8 1.4 1.2 1.6 1.8 I2t 5 0 1 10 Instantaneous on-state voltage, VT - (V) ms it 1 % Tj = –40˚C im Region of certain triggering rL 0.01 0.1 IGD Gate trigger current, I GT 10 150 20 30 50 Cycles at 50Hz Duration 0.15 d.c. 0.10 0.05 Lo we % Tj = 125˚C 99 it im rL pe Up Gate trigger voltage, VGT - (V) Pulse width Frequency Hz Table gives pulse power PGM in Watts 10 µs 50 100 400 75 0W 5 20 100 100 100 0W W 25 VFGM 100 100 100 10 100 100 100 100 5W W 500 100 100 25 1ms 100 50 10 10ms 10 - - 0.1 0.001 2 3 45 Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% VRSM at Tcase = 130˚C) 100 1 1 Thermal impedance, Rth(j-c) - (˚C/W) Fig. 3 Maximum (limit) on-state characteristics Tj = 25˚C 175 I2t value - (A2s x 103) Instantaneous on-state current, IT - (A) 1400 Tj = 135˚C 0.1 - (A) Fig. 5 Gate characteristics 10 IFGM 0 0.001 0.01 0.1 1.0 Time - (s) 10 100 Fig. 6 Transient thermal impedance - dc 4/9 www.dynexsemi.com MP03XXX360 1100 1100 800 700 600 500 400 300 700 600 500 400 300 200 200 100 100 0 0 Fig. 7 On-state power loss per arm vs on-state current at specified conduction angles, sine wave 50/60Hz Conduction angle 30° 60° 90° 120° 180° 90 80 70 60 50 40 30 20 150 250 350 450 550 650 Square wave current (Average, per arm) 750 Fig. 8 On-state power loss per arm vs on-state current at specified conduction angles, square wave 50/60Hz 100 100 90 80 Conduction angle 30° 60° 90° 120° 180° DC 70 60 50 40 30 20 10 10 0 100 0 50 50 100 150 200 250 300 350 400 450 500 550 Sine wave current (Average, per arm) Maximum permissible case temperature - (˚C) 0 Maximum permissble case temperature - (˚C) Conduction angle 30° 60° 90° 120° 900 180° DC 800 1000 Power dissipation (Watts, per arm) Power dissipation (Watts, per arm) Conduction angle 30° 1000 60° 90° 120° 900 180° 150 200 250 300 350 400 450 500 Sine wave current (Average, per arm) - (A) Fig. 9 Maximum permissible case temperature vs on-state current at specified conduction angles, sine wave 50/60Hz 550 0 100 200 300 400 500 600 700 Square wave current (Average, per arm) - (A) 800 Fig. 10 Maximum permissible case temperature vs on-state current at specified conduction angles, square wave 50/60Hz 5/9 www.dynexsemi.com MP03XXX360 1600 Rth(hs-a) 0.02 0.04 0.08 0.1 0.12 0.15 0.2 0.3 0.4 1400 1200 1000 R - Load L - Load 1400 1200 1000 800 800 600 600 400 400 200 200 0 20 30 40 50 60 70 80 90 100 110 120 Maximum ambient temperature - (˚C) 0 100 200 300 400 500 Single phase bridge DC output current (A) Single phase bridge total device losses - (W) Single phase bridge total device losses - (W) 1600 0 600 Fig. 11 50/60Hz single phase bridge DC output current vs power loss and maximum permissible case temperature for specified values of heatsink thermal resistance 1600 1600 Rth(hs-a) 0.02 0.04 0.08 0.1 0.12 0.15 0.2 0.3 0.4 1200 1000 R & L Load 1400 1200 1000 800 800 600 600 400 400 200 200 0 20 30 40 50 60 70 80 90 100 110 120 Maximum ambient temperature - (˚C) 0 100 200 300 400 500 3 Phase bridge output DC current - (A) Total device loss - (Watts) 3 Phase bridge total device losses - (W) 1400 0 600 Fig. 12 Fig. 11 50/60Hz Three phase bridge DC output current vs power loss and maximum permissible case temperature for specified values of heatsink thermal resistance 6/9 www.dynexsemi.com MP03XXX360 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 42.5 35 28.5 G1 K1 6.5 3 2 1 K2 G2 5 5 5 18 50 38 Ø5.5 80 2.8x0.8 115 32 52 3x M8 92 Recommended fixings for mounting: M5 socket head cap screws. Nominal weight: 950g Auxiliary gate/cathode leads are not supplied but may be purchsed separately. Module outline type code: MP03 7/9 www.dynexsemi.com MP03XXX360 MOUNTING RECOMMENDATIONS Adequate heatsinking is required to maintain the base temperature at 75˚C if full rated current is to be achieved. Power dissipation may be calculated by use of VT(TO) and rT information in accordance with standard formulae. We can provide assistance with calculations or choice of heatsink if required. The heatsink surface must be smooth and flat; a surface finish of N6 (32µin) and a flatness within 0.05mm (0.002") are recommended. Immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, Scotch Brite or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. Care should be taken to ensure no foreign particles remain. An even coating of thermal compound (eg. Unial) should be applied to both the heatsink and module mounting surfaces. This should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance. After application of thermal compound, place the module squarely over the mounting holes, (or ‘T’ slots) in the heatsink. Using a torque wrench, slowly a torque wrench, slowly tighten the recommended fixing bolts at each end, rotating each in turn no more than 1/4 of a revolution at a time. Continue until the required torque of 6Nm (55lb.ins) is reached at both ends. It is not acceptable to fully tighten one fixing bolt before starting to tighten the others. Such action may DAMAGE the module. POWER ASSEMBLY CAPABILITY The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of Dynex semiconductors. An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today. HEATSINKS The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. 8/9 www.dynexsemi.com MP03XXX360 http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4484-6 Issue No. 6.1 June 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 9/9 www.dynexsemi.com