DYNEX MP03XXX275-20

MP03 XXX 275 Series
MP03 XXX 275 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces December 1998 version, DS4481-4.0
DS4481-5.0 January 2000
FEATURES
KEY PARAMETERS
2200V
VDRM
ITSM
8100A
IT(AV) (per arm)
277A
2500V
Visol
■ Dual Device Module
■ Electrically Isolated Package
■ Pressure Contact Construction
CIRCUIT OPTIONS
■ International Standard Footprint
■ Alumina (non-toxic) Isolation Medium
Code
APPLICATIONS
HBT
Circuit
■ Motor Control
■ Controlled Rectifier Bridges
HBP
■ Heater Control
■ AC Phase Control
HBN
PACKAGE OUTLINE
VOLTAGE RATINGS
Type
Number
Conditions
Repetitive
Peak
Voltages
VDRM VRRM
MP03/275 - 22
2200
MP03/275 - 20
2000
MP03/275 - 18
1800
MP03/275 - 16
1600
T(vj) = 125oC
IDRM = IRRM = 30mA
VDSM & VRSM =
VDRM & VRRM+ 100V
respectively
Lower voltage grades available.
For full description of part number see "Ordering instructions"
on page 3.
Module type code: MP03.
See Package Details for further information.
CURRENT RATINGS - PER ARM
Symbol
IT(AV)
IT(RMS)
Parameter
Mean on-state current
RMS value
Conditions
Halfwave, resistive load
Tcase = 75oC
Max.
Units
Tcase = 75oC
277
A
Tcase = 85oC
234
A
Theatsink = 75oC
216
A
Theatsink = 85oC
181
A
430
A
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MP03 XXX 275 Series
SURGE RATINGS - PER ARM
Symbol
Parameter
ITSM
Surge (non-repetitive) on-state current
Max.
Units
8.1
kA
6.5
kA
VR = 0
0.32 x 106
A2s
VR = 50% VRRM
0.21 x 106
A2s
Max.
Units
dc
0.12
o
halfwave
0.13
o
C/W
3 phase
0.14
o
C/W
Thermal resistance - case to heatsink
per thyristor or diode
Mounting torque = 5Nm
with mounting compound
0.05
o
Tvj
Virtual junction temperature
Off-state (Blocking)
125
o
Tstg
Storage temperature range
-40 to 125
o
Visol
Isolation voltage
2
It
Conditions
V =0
10ms half sine; R
Tj = 125˚C
VR = 50% VRRM
10ms half sine;
Tj = 125˚C
2
I t for fusing
THERMAL & MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-hs)
Parameter
Thermal resistance - junction to case
per Thyristor or Diode
Conditions
Commoned terminals to base plate
AC RMS, 1min, 50Hz
C/W
C/W
C
C
2.5
kV
Max.
Units
1.65
V
DYNAMIC CHARACTERISTICS- THYRISTOR
Symbol
Parameter
Conditions
On-state voltage
At 1000A, Tcase = 25oC - See Note 1
Peak reverse and off-state current
At VRRM/VDRM, Tj = 125oC
30
mA
dV/dt
Linear rate of rise of off-state voltage
To 67% VDRM Tj = 125oC
200*
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 500A
Gate source 10V, 5Ω
Rise time 0.5µs, Tj =125oC
100
A/µs
VT(TO)
Threshold voltage
At Tvj = 125oC - See Note 1
0.93
V
On-state slope resistance
At Tvj = 125oC - See Note 1
0.67
mΩ
VTM
IRRM/IDRM
rT
* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
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MP03 XXX 275 Series
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
Typ.
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
-
3.0
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
-
150
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 25oC
-
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
-
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
-
0.25
V
VRGM
Peak reverse gate voltage
-
5.0
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
-
10
A
PGM
Peak gate power
tp = 25µs
-
100
W
PG(AV)
Mean gate power
-
5
W
ORDERING INSTRUCTIONS
Part number is made up of as follows:
Examples:
MP03 HBT 275 - 20
MP
03
HBT
275
20
= Pressure contact module
= Outline type
= Circuit configuration code (see "circuit options" - front page)
= Nominal average current rating at Tcase = 75oC
= VRRM/100
MP03 HBP275-16
MP03 HBN275-22
MP03 HBT275-18
NOTE: Diode ratings and characteristics are comparable with the SCR in types HBP or HBN
Types HBP or HBN can also be supplied with diode polarity reversed, to special order.
MOUNTING RECOMMENDATIONS
■ Adequate heatsinking is required to maintain the base temperature
at 75oC if full rated current is to be achieved. Power dissipation may
be calculated by use of VT(TO) and rT information in accordance with
standard formulae. We can provide assistance with calculations or
choice of heatsink if required.
■ The heatsink surface must be smooth and flat; a surface finish
of N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.
■ Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build up
and foreign material. Care should be taken to ensure no foreign
particles remain.
■ An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces. This
should ideally be 0.05mm (0.002") per surface to ensure optimum
thermal performance.
■ After application of thermal compound, place the module
squarely over the mounting holes, (or 'T' slots) in the heatsink.
Using a torque wrench, slowly tighten the recommended fixing
bolts at each end, rotating each in turn no more than 1/4 of a
revolution at a time. Continue until the required torque of 5Nm
(44lb.ins) is reached at both ends.
■ It is not acceptable to fully tighten one fixing bolt before starting
to tighten the others. Such action may DAMAGE the module.
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MP03 XXX 275 Series
CURVES
2000
Instantaneous on-state current - (A)
Measured under pulse conditions
1500
1000
Tj = 125˚C
500
0
0.5
1.0
1.5
2.0
Instantaneous on-state voltage - (V)
Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1
0W
10 W
75 W
50
Frequency Hz
50 100 400
100 100 100
100 100 100
100 100 100
100 100 25
100 50
10
-
VFGM
W
Pulse Width
µs
20
25
100
500
1ms
10ms
5W
10
Table gives pulse power PGM in Watts
10
Tj = -40˚C
Tj = 25˚C
er
Li
m
it
1%
Region of
certain triggering
w
1
Tj = 125˚C %
9
it 9
Lim
er
p
Up
Lo
Gate trigger voltage - (V)
100
0.1
0.001
0.01
IGD
0.1
Gate trigger current - (A)
Fig. 2 Gate trigger characteristics
4/10
0.1
10
IFGM
MP03 XXX 275 Series
Thermal impedance - (˚C/W)
0.15
d.c.
0.10
0.05
0
0.001
0.01
0.1
Time - (s)
1.0
10
100
20
I2t = Î2 x t
2
15
300
10
250
I2t
5
0
1
200
10
ms
1
2 3 45
I2t value - (A2s x 103)
Peak half sine wave on-state current - (kA)
Fig. 3 Transient thermal impedance (DC) - (Thyristor or diode)
150
50
Cycles at 50Hz
Duration
Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% VRRM, Tcase = 125˚C (Thyristor or diode)
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MP03 XXX 275 Series
450
On-state power loss per device - (W)
400
180˚
120˚
350
90˚
300
60˚
250
30˚
200
150
100
50
0
0
50
100
150
200
Mean on-state current - (A)
250
300
Fig. 5 On-state power loss per arm vs forward current at various conduction angles, sine wave, 50/60Hz
450
180˚
d.c.
On-state power loss per device - (W)
400
120˚
350
90˚
60˚
300
30˚
250
200
150
100
50
0
0
50
100
150
200
Mean on-state current - (A)
250
300
350
Fig. 6 On-state power loss per arm vs forward current at various conduction angles, square wave, 50/60Hz
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Maximum permissible case temperature - (˚C)
MP03 XXX 275 Series
140
120
100
80
60
40
20
30˚
0
0
50
60˚
90˚
120˚
100
150
200
Mean on-state current - (A)
180˚
250
300
Maximum permissible case temperature - (˚C)
Fig. 7 Maximum permissible case temperature vs forward current per arm at various conduction angles, sine wave, 50/60Hz
140
120
100
d.c.
80
60
40
20
30˚
0
0
50
100
60˚
90˚
150
200
Mean on-state current - (A)
120˚
250
180˚
300
350
Fig. 8 Maximum permissible case temperature vs forward current per arm at various conduction angles, square wave, 50/60Hz
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MP03 XXX 275 Series
1200
0.04 0.02 Rth(hs-a) ˚C/W
1000
R - Load
Total power - (W)
0.08
L - Load
800
0.10
600
0.12
0.15
0.20
0.30
0.40
400
200
0
20
0
40
60
80 100 120
Maximum ambient temperature - (˚C)
140
0
200
400
D.C. output current - (A)
600
Fig. 9 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for
various values of heatsink thermal resistance.
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
1200
Total power - (W)
1000
0.08
R & L- Load
0.04 0.02 Rth(hs-a) ˚C/W
800
600
0.10
0.12
0.15
400
0.20
200
0.30
0.40
0
20
0
40
60
80 100 120
Maximum ambient temperature - (˚C)
140
0
200
400
D.C. output current - (A)
600
Fig. 9 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various
values of heatsink thermal resistance.
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
8/10
MP03 XXX 275 Series
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
42.5
35
28.5
Ø5.5
5
6.5
5
18
50
38
5
K2
G2
G1
K1
80
2.8x0.8
2
3x M8
3
32
52
1
92
Recommended fixings for mounting:
Recommended mounting torque:
Recommended torque for electrical connections:
Maximum torque for electrical connections:
Nominal weight: 950g
M5 socket head cap screws.
5Nm (44lb.ins)
8Nm (70lb.ins)
9Nm (80lb.ins)
Module outline type code: MP03
CIRCUIT CONFIGURATIONS
G1K1
K2 G2
2
1
3
HBT
G1K1
1
2
3
HBP
K2 G2
1
2
3
HBN
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MP03 XXX 275 Series
http://www.dynexsemi.com
e-mail: [email protected]
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Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
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© Dynex Semiconductor 2000 Publication No. DS4481-5 Issue No. 5.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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