FMS2003QFN-1 Preliminary Data Sheet 2.1 High Power Reflective GaAs SP4T Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch NiPdAu finish for Military and High reliability applications Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels High isolation: >30dB at 0.9GHz Low Insertion loss: 0.5dB at 0.9GHz Low control current ANT RF1 RF2 RF3 RF4 Description and Applications: The FMS2003QFN is a low loss, high power and linear single pole four throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology, which offers excellent performance optimised for switch applications. The FMS2003QFN is designed for use in dual/tri and quad band GSM handset antenna switch modules and RF front-end modules. It can also find use in other applications where high power and linear RF switching is necessary. Electrical Specifications: Parameter Insertion Loss Return Loss Isolation 2nd Harmonic Level 3rd Harmonic Level Switching speed : Trise, Tfall P0.1dB IP3 Cross modulation Control Current (TAMBIENT = 25°C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50Ω) Test Conditions Min Typ Max Units 0.5 – 1.0 GHz <0.62 dB 1.0 – 2.0 GHz <0.65 dB 0.5 – 2.5 GHz 20 dB 0.5 – 1.0 GHz >30 dB 1.0 – 2.0 GHz >26 dB 1 GHz, Pin = +35 dBm, 100% Duty Cycle -69 dBc 2 GHz, Pin = +33dBm, 100% Duty Cycle -67 dBc 1 GHz, Pin = +35 dBm, 100% Duty Cycle -69 dBc 2 GHz, Pin = +33dBm, 100% Duty Cycle -70 dBc 10% to 90% RF <0.15 µs 90% to 10% RF <0.06 µs 0.5 – 1.0 GHz 38 1.0 – 2.0 GHz 38 0.5 – 1.0 GHz >65 1.0 – 2.0 GHz >62 Tx1 836Hz Tx2 837MHz +21dBm Rx1 880MHz –25dBm Tx1 1879.5MHz Tx2 1880.5MHz +21dBm,Rx1 1960MHz –25dBm +35dBm RF input @1GHz dBm dBm >110 dBm <10 µA 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850-5790 Fax: +1 (408) 850-5766 Email: [email protected] Website: www.filtronic.com FMS2003QFN-1 Preliminary Data Sheet 2.1 Absolute Maximum Ratings: Parameter Symbol Absolute Maximum Max Input Power Pin +38dBm Control Voltage V ctrl +5V Operating Temp T oper -40°C to +100°C Storage Temp T stor -55°C to +150°C Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. Truth Table: ANT TO RF1 ANT TO RF2 ANT TO RF1 ANT TO RF2 Isolation Isolation Isolation Isolation Isolation Switch State V1 V2 V3 V4 (A) HIGH LOW LOW LOW (B) LOW HIGH LOW LOW Isolation (C) LOW LOW HIGH LOW Isolation Isolation (D) LOW LOW LOW HIGH Isolation Isolation Insertion Loss Insertion Loss Insertion Loss Isolation Isolation Insertion Loss General Test Conditions: LOW = 0V to 0.2V Bias Voltages Note: HIGH +2.5V to +5V Port Impedances 50Ω Off arm termination 50Ω External DC blocking capacitors are required on all RF ports (typ: 100pF) 2 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850-5790 Fax: +1 (408) 850-5766 Email: [email protected] Website: www.filtronic.com Preliminary Data Sheet 2.1 FMS2003QFN-1 Typical Measured Performance on Evaluation Board (De-Embedded): (Measurement Conditions VCTRL = 2.5V (high) & 0V (low), TAMBIENT = 25°C unless otherwise stated) FMS2003QFN DE EMBEDDED INSERTION LOSS 0 -0.1 -0.2 -0.3 dB -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 0.5 1 1.5 2 2.5 Frequency (GHz) 3 3.5 FMS2003QFN ISOLATION -15 -20 Key To Measurements dB -25 -30 -35 -40 0.5 1 1.5 2 Frequency (GHz) 2.5 3 3.5 -- Measurement ay -40°C -- Measurement ay 85°C -- Measurement ay 25°C FMS2003QFN RETURN LOSS -10 dB -15 -20 -25 -30 0.5 1 1.5 2 Frequency (GHz) 2.5 3 3.5 3 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850-5790 Fax: +1 (408) 850-5766 Email: [email protected] Website: www.filtronic.com FMS2003QFN-1 Preliminary Data Sheet 2.1 Pad Layout: V1 Pin 1 12 ANT V2 11 10 9 RF1 RF3 8 PADDLE 2 7 3 4 V3 5 RF2 RF4 6 V4 *View from the top of the package Pin Number Description 1 RF1 2 GND 3 RF3 4 V3 5 N/C 6 V4 7 RF4 8 GND 9 RF2 10 V2 11 ANT RF 12 V1 PADDLE GND QFN 12 Lead 3*3 Package Outline: ♦ NiPdAu finish for Military and High reliability applications 4 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850-5790 Fax: +1 (408) 850-5766 Email: [email protected] Website: www.filtronic.com FMS2003QFN-1 Preliminary Data Sheet 2.1 Evaluation Board: BOM Label C6 C1 C10, C11, C12, C7 C5 Component Capacitor, 470pF, 0603 C13 C2 C1,C2, Capacitor, 100pF, 0402 C3,C4,C5 C6, C7, C8, C9 C3 C8 C9 Capacitor, 47pF, 0402 C4 Preferred evaluation board material is 0.25 mm thick C10 BOARD C11 C12 C13 ROGERS RT4350. All RF tracks should be 50 ohm characteristic impedance. Evaluation Board De-Embedding Data (Measured): 0 FMS2003QFN CALIBRATION BOARD INSERTION LOSS FMS2003QFN CALIBRATION BOARD RETURN LOSS -15 -0.1 -0.2 -20 -0.3 -25 -0.5 dB dB -0.4 -0.6 -30 -0.7 -0.8 -35 -0.9 -1 0.5 1 1.5 2 2.5 Frequency (GHz) 3 -40 3.5 0.5 1 1.5 2 2.5 Frequency (GHz) 5 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 988 1845 Fax: +1 (408) 970 9950 Email: [email protected] Website: www.filtronic.com 3 3.5 Preliminary Data Sheet 2.1 FMS2003QFN-1 Ordering Information: Part Number Description FMS2003-005 Packaged Die FMS2003-005-EB Packaged die mounted on evaluation board Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A as defined in Jedec Standard No.22-A114 (0-500V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. Preferred Assembly Instructions: Please refer to FCSL applications note: FAN 003 (handling and assembly of Filtronic QFN devices) Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment. 6 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 988 1845 Fax: +1 (408) 970 9950 Email: [email protected] Website: www.filtronic.com