FMS2017 Preliminary Data Sheet 2.2 2.4GHz DPDT GaAs Single-Band WLAN Switch Features: ♦ ♦ ♦ ♦ ♦ Functional Schematic V4 Available as RF known good die Suitable for Single-band WLAN 802.11b/g Applications Excellent low control voltage performance Very low Insertion loss typ. 0.55dB at 2.4GHz High isolation typ. 23dB at 2.4GHz TX V3 AN1 ANT2 V1 RX V2 Description and Applications: The FMS2017 is a low loss, single band Gallium Arsenide antenna diversity switch designed for use in Wireless LAN applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology that offers leading edge performance, optimised for switch applications. The FMS2017 is designed for use in 802.11b/g WLAN modules. Electrical Specifications: (TAMBIENT = 25°C,Vctrl = 0V/(2.4V,+3.3V), ZIN = ZOUT = 50Ω) Parameter Conditions Insertion Loss (All Paths) 2.5GHz, Small Signal 0.55 dB Isolation (All Paths) 2.5GHz, Small Signal 23 dB Return Loss 2.5GHz, Small Signal 20 dB P1dB 2.5GHz Control Voltage 3.0V 37 dBm 2nd Harmonic Level 2.4GHz, Pin = 32dBm, Vctrl =2.4V -65 dBc 3rd Harmonic Level 2.4GHz, Pin = 32dBm, Vctrl =2.4V -65 dBc Switching speed Vctrl=2.4V, Pin=20dBm 20 nS Note: Min Typ Max External DC blocking capacitors are required on all RF ports (typ: 47pF) All unused ports terminated in 50Ω. 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com Units FMS2017 Preliminary Data Sheet 2.2 Absolute Maximum Ratings: Parameter Symbol Absolute Maximum Max Input Power Pin +36dBm Control Voltage Vctrl +5V Operating Temperature Toper -40°C to +100°C Storage Temperature Tstor -55°C to +150°C Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. Truth Table: State V1 V2 V3 V4 PATH(S) 1 High Low Low Low RX-ANT1 2 Low High Low Low RX-ANT2 3 Low Low High Low TX-ANT2 4 Low Low Low High TX-ANT1 5 Low High Low High TX-ANT1 & RX-ANT2 6 High Low High Low TX-ANT2 & RX-ANT1 Note: ‘High’ ‘Low’ = +2.4V to +3.3V = 0V to +0.2V Pad and Die Layout: H G D Pad Ref Pad Name Description Pin Coordinates (µm) A ANT1 Antenna 1 (155, 300) B RX Receive (465, 90) C ANT2 Antenna 2 (775, 300) D TX Transmit (465, 510) E V1 Vctrl1 (A1 to RX) (155, 90) F V2 Vctrl2 (A2 to RX) (775, 90) G V3 Vctrl3 (TX to A2) (775, 510) H V4 Vctrl4 (A1 to TX) (155, 510) C A B E F Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the bond pad opening Die Size (µm) Die Thickness (µm) Min. Bond Pad Pitch (µm) Min. Bond pad opening (µm) 930x600 150 225 85x85 2 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com FMS2017 Preliminary Data Sheet 2.2 Typical Measured Performance on Evaluation Board (De-Embedded): (Measurement Conditions VCTRL=3V, TAMBIENT = 25°C unless otherwise stated) Tx-Rx Isolation -15 -0 .2 -20 -0 .4 -25 Isolation (dB) Insertion Loss (dB) Insertion Loss 0 .0 -0 .6 -0 .8 -30 -35 -1 .0 -40 0.5 1.0 1 .5 2.0 F requ enc y (GH z) 2 .5 3.0 2 .5 3.0 0 .5 1.0 1 .5 2.0 Fr eque ncy (GH z) 2 .5 3.0 Return Loss -10 Return Loss (dB) -15 -20 -25 -30 -35 0 .5 1.0 1 .5 2.0 F r eque ncy (G H z) Insertion Loss vs Input Power Insertion Loss vs Control Voltage 0 0 -0.2 -0.4 Insertion Loss (dB) Insertion Loss (dB) -0.4 -0.6 -0.8 -1 -0.8 -1.2 -1.2 -1.6 -1.4 Input Power=28dBm -2 1.50 -1.6 10 15 20 25 30 35 1.75 2.00 2.25 2.50 Control Voltage (V) Input Pow er (dBm ) 3 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com 2.75 3.00 FMS2017 Preliminary Data Sheet 2.2 Evaluation Board: BOM V4, GND, V3 RF1/TX C2 C1 Capacitor, 100pF, 0603 C2 Capacitor, 47pF, 0402 should be 50 ohm characteristic impedance. C2 C2 Preferred evaluation board material is 0.25 mm thick ROGERS RT4350. All RF tracks C2 C2 RF3/ANT1 Component BOARD C1 C1 C2 Label Absolute placement of surface mount de-coupling capacitors is not C2 critical. RF4/ANT2 C2 C1 C1 RF2/RX V1, GND V2 Evaluation Board De-Embedding Data (Measured): Insertion Loss Return Loss 0 -0.2 Return Loss (dB) Insertion Loss (dB) 0.0 -0.4 -0.6 -0.8 -10 -20 -30 -40 -1.0 0.5 1.0 1.5 2.0 Frequency (GHz) 2.5 0.5 3.0 1.0 1.5 2.0 Frequency (GHz) 2.5 4 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com 3.0 Preliminary Data Sheet 2.2 FMS2017 Ordering Information: Part Number Description FMS2017-000-WP Die – waffle pak FMS2017-000-GP Die – gel pak FMS2017-000-EB Die mounted on evaluation board FMS2017-000-FF Wafer mounted on film frame Preferred Assembly Instructions: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire is used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment. 5 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com