FMS2007 Preliminary Data Sheet 2.2 DC-6GHz DPDT Diversity Switch Features: ♦ ♦ ♦ ♦ ♦ Functional Schematic V4 Low Insertion loss Low Harmonic Distortion High Transmit-Receive Isolation Suitable for WLAN 802.11a and 802.11b/g Applications Filtronic Advanced GaAs pHEMT Technology TX V3 ANT1 Description and Applications: ANT2 V1 RX V2 The FMS2007 is a low loss linear Double-Pole Double-Throw dual band diversity switch designed for use in WLAN applications. Typical applications are for UNII, Hiperlan, 802.11a and 802.11b/g systems that employ two antennas for transmit and receive diversity. Electrical Specifications: (TAMBIENT = 25°C,Vcontrol = 0V/2.5V, ZIN = ZOUT = 50Ω) Parameter Test Conditions Insertion Loss Min Typ Max Units 2.4GHz 0.9 1.1 dB Insertion Loss 6GHz 1.3 1.5 dB Return Loss 2.4GHz 16 dB Return Loss 6GHz 12 dB Tx-Rx Isolation 2.4GHz 27 39 dB Tx-Rx Isolation 6GHz 27 28 dB 2nd Harmonic Level 2.4, 6 GHz, Pin = 20dBm, Vctrl = 2.4V -70 dBc 3rd Harmonic Level 2.4, 6 GHz, Pin = 20dBm, Vctrl =2.4V -70 dBc Switching speed Vctrl=2.4V, Pin=20dBm 30 ns 10% to 90% RF and 90% to 10% RF Note: External DC blocking capacitors are required on all RF ports (typ: 47pF). All unused ports terminated in 50Ω. 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com FMS2007 Preliminary Data Sheet 2.2 Absolute Maximum Ratings: Parameter Absolute Maximum Max Input Power +27dBm Control Voltage +5V Operating Temperature -40°C to +100°C Storage Temperature -55°C to +150°C Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. Truth Table: State V1 V2 V3 V4 PATH(S) 1 HIGH LOW LOW LOW RX-ANT1 2 LOW HIGH LOW LOW RX-ANT2 3 LOW LOW HIGH LOW TX-ANT2 4 LOW LOW LOW HIGH TX-ANT1 5 LOW HIGH LOW HIGH TX-ANT1 & RX-ANT2 6 HIGH LOW HIGH LOW TX-ANT2 & RX-ANT1 Note: ‘High’ ‘Low’ = +2.4V to +5V = 0V to +0.2V 2 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com FMS2007 Preliminary Data Sheet 2.2 Pad and Die Layout: N M A L B K C J D I E H F Pad Number Pad Name G Description Pin Coordinates (x µm, y µm) A GND Ground (142.1 , 709.0) B ANT1 Antenna 1 (142.1 , 581.6) C GND Ground (142.1 , 448.5) D ANT2 Antenna 2 (142.1 ,327.9) E GND Ground (142.1 , 201.4) F V1 RX-Ant1 (349.8 , 88.5) G V3 TX-Ant2 (522.2 , 88.5) H GND Ground (769.2 , 201.4) I RX Receive (769.2 , 327.9) J GND Ground (769.2 , 448.5) K TX Transmit (769.2 , 581.6) L GND Ground (769.2 , 709.0) M V2 RX-Ant2 (522.2 , 807.7) N V4 Tx-Ant1 (349.8 , 807.7) Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the bond pad opening Die Size (µm) Die Thickness (µm) Min. Bond Pad Pitch(µm) Min. Bond pad opening (µm) 897x929 150 127 80x80 3 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com FMS2007 Preliminary Data Sheet 2.2 Typical Performance Curves: On Wafer Measurements: Insertion Loss A1-TX Isolation 0 -20 -25 -0.5 -30 -1 -35 -1.5 -40 -2 -45 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 4.5 5 5.5 6 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 4.5 5 5.5 6 Evaluation Board: Insertion Loss Return Loss 0 0 -0.5 -10 -1 -20 -1.5 -30 -2 -40 -2.5 -50 -60 -3 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 4.5 5 5.5 6 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 4.5 5 5.5 6 Note: Evaluation Board Insertion Loss to be corrected A1-TX, A2-RX Isolation RX-TX Isolation -20 -20 -30 -30 -40 -40 -50 -50 -60 -60 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 4.5 5 5.5 0.5 6 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 4.5 5 4 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com 5.5 6 FMS2007 Preliminary Data Sheet 2.2 Evaluation Board Data: BOM ANT1 C1 C1 C2 TX Label Component C1 Capacitor, 100pF, 0603 C2 Capacitor, 47pF, 0402 C2 C2 C2 C2 ANT2 C2 C1 RX C1 Evaluation Board Correction Data Frequency Insertion Loss 2.4GHz 0.25dB 6.0GHz 0.80dB 5 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com Preliminary Data Sheet 2.2 FMS2007 Ordering Information: Part Number Description FMS2007-000-WP Die – waffle pak FMS2007-000-GP Die – gel pak FMS2007-000-EB Die mounted on evaluation board FMS2007-000-FF Wafer mounted on film frame Preferred Assembly Instructions: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire is used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment. 6 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com