FMS2028 Preliminary Datasheet v2.1 SP6T GaAs Multi-Band GSM Antenna Switch FEATURES: • • • • • • FUNCTIONAL SCHEMATIC: Available in die form Very low Tx Insertion loss High Tx-Rx isolation >45dB typ. at 1.8GHz High Tx-Tx isolation >30dB typ. at 1.8GHz Excellent low control voltage performance Excellent harmonic performance AN T R X1 V RX 1 TX 1 R X2 V TX 1 V RX 2 TX 2 GENERAL DESCRIPTION: R X3 V TX 2 FMS2028 is a low loss, high power single pole six throw Gallium Arsenide antenna switch. The die is fabricated using the Filtronic FL05 0.5µm switch process technology that offers leading edge performance optimised for switch applications. FMS2028 is designed for use in dual-, tri- and quad-band GSM handset antenna switch and RF front-end modules. V RX 3 R X4 V RX 4 VM TYPICAL APPLICATIONS: • Suitable for multi-band GSM/DCS/PCS/EDGE applications ELECTRICAL SPECIFICATIONS: PARAMETER CONDITIONS (1) MIN TYP MAX UNITS Tx Insertion Loss 0.9 GHz 1.8 GHz 0 0 0.4 0.41 0.55 0.6 dB dB Rx Insertion Loss 0.9 GHz 1.8 GHz 0 0 0.73 1.0 1 1.2 dB dB Return Loss 0.5 – 2.5 GHz –– 23 –– dB Isolation (TX-TX) 0.9 GHz 1.8 GHz 26 19.5 28.5 21 55 45 dB dB Isolation (TX-RX) 0.9 GHz 1.8 GHz 42 37 47 42 55 55 dB dB Isolation (RX-RX) 0.5 – 1.0 GHz 1.0 – 2.0 GHz 26 20 28 22 –– –– dB dB P0.1dB 0.9 GHz, CW –– 37 –– dBm 2nd Harmonic Level 0.9 GHz, Pin = +35 dBm, CW (2) 1.8 GHz, Pin = +33 dBm, CW (2) -100 -100 -80 -80 -70 -70 dBc dBc 3rd Harmonic Level 0.9 GHz, Pin = +35 dBm, CW (2) 1.8 GHz, Pin = +33 dBm, CW (2) -100 -100 -68 -72 -65 -65 dBc dBc Switching speed 10% to 90% RF and 90% to 10% RF, Pin = 0 dBm 50% control to 90% RF and 50% control to 90% RF, Pin = 0 dBm –– –– 0.3 µs –– –– 1 µs Vctrl = 0 / 2.7 V, Pin = 35 dBm, 0.9 GHz Vctrl = 0 / 2.7 V, Pin = 0 dBm, 1.8 GHz 0.01 0.01 12 1.3 40 4 µA µA Control Current Note 1: TAMBIENT = 25°C, Vctrl = 0V/2.7V, ZIN = ZOUT = 50Ω Note 2: Measured harmonic values are dependant upon system termination impedances at the harmonic frequency 1 Tel: +44 (0) 1325 301111 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMS2028 Preliminary Datasheet v2.1 ABSOLUTE MAXIMUM RATINGS: BONDPADS COORDINATES: PARAMETER SYMBOL ABSOLUTE MAXIMUM PAD REF PAD NAME DESCRIPTION PIN COORDINATES (µM) Max Input Power Pin +38dBm Control Voltage A Tx1 TX1 RF Output (125.9, 121.4) Vctrl +6V B VRx1 Rx1 Control Voltage (100.2, 215.9) Operating Temp Toper -40°C to +100°C C VTx1 Tx1 Control Voltage (110.4, 310.5) Storage Temp Tstor -55°C to +150°C D VRx2 Rx2 Control Voltage (90.5, 405.1) E VM Common Receive Control Voltage (90.5, 499.7) F VRx3 Rx3 Control Voltage (90.5, 594.3) G VTx2 Tx2 Control Voltage (107, 688.9) H VRx4 Rx4 Control Voltage (107, 783.5) Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. PAD LAYOUT: O I H I Tx2 Tx2 RF Output (125.9, 878.1) G J ANT Antenna (424.9, 499.7) K Rx1 Rx1 RF Output (568.2, 114.8) L GND Ground (747.4, 282.7) M Rx2 RX2 RF Output (747.4, 380.3) N Rx3 RX3 RF Output (747.4, 681.2) O Rx4 RX4 RF Output (747.4, 882.1) N F E J D M C L B A Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening K DIE SIZE (µm) DIE THICKNESS (µm) MIN. BOND PAD PITCH (µm) MIN. BOND PAD OPENING (µm x µm ) 852 x 990 150 94.6 65 x 65 TRUTH TABLE: VM VRX4 VRX3 VRX2 VRX1 VTX2 VTX1 ON PATH Low Low Low Low Low Low High ANT-TX1 Low Low Low Low Low High Low ANT-TX2 High Low Low Low High Low Low ANT-RX1 High Low Low High Low Low Low ANT-RX2 High Low High Low Low Low Low ANT-RX3 High High Low Low Low Low Low ANT-RX4 Note: High: 2.7V ± 0.2V; Low: 0V ± 0.2V 2 Tel: +44 (0) 1325 301111 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMS2028 Preliminary Datasheet v2.1 TYPICAL MEASURED PERFORMANCE ON EVALUATION BOARD: Note: Measurement Conditions VCTRL= 0V (low) & 2.7V (high), TAMBIENT = 25°C unless otherwise stated 3 Tel: +44 (0) 1325 301111 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMS2028 Preliminary Datasheet v2.1 EVALUATION BOARD COMPONENT SIDE LAYOUT: EVALUATION BOARD SCHEMATIC: V1 C3 V3 V4 V5 V6 V7 C2 C2 C2 C2 C2 C2 C2 C1 C1 C1 C1 C1 C1 C1 VRX1 RF1 V2 VTX1 VRX2 VM VRX3 VTX2 VRX4 TX2 TX1 C3 RF7 C3 RF4 FMS2028 RF2 C3 ANT RX1 GND BILL OF MATERIALS: LABEL RX2 RX3 RX4 C3 C3 C3 RF3 RF5 RF6 COMPONENT Board Preferred evaluation board material is 0.25 mm thick ROGERS RT4350. All RF tracks should be 50 ohm characteristic material. RFC SMA RF connector DCC DC connector C1 Capacitor, 47pF, 0402 C2 Capacitor, 470pF, 0603 C3 Capacitor, 100pF, 0402 4 Tel: +44 (0) 1325 301111 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMS2028 Preliminary Datasheet v2.1 PREFERRED ASSEMBLY INSTRUCTIONS: HANDLING PRECAUTIONS: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy is should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters, noise data and large-signal models are available on the Filtronic web site. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire is used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. ORDERING INFORMATION: Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. PART NUMBER DESCRIPTION FMS2028-000-FF Wafer mounted on film frame FMS2028-000-WP Die in Waffle-pack (Gel-pak available on request) FMS2028-000-EB Die mounted on evaluation board 5 Tel: +44 (0) 1325 301111 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com