Formosa MS Advanced Schottky Barrier Diodes BAT43WS Surface mount small signal type Extermely thin package 0.087 (2.2) 0.071 (1.8) Low stored charge 0.012(0.3) Typ. Majority carrier conduction R0.3 (0.012) Typ. 0.055 (1.4) 0.039 (1.0) 0.043 (1.1) 0.028 (0.7) Mechanical data Case : Molded plastic, 0805 Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.000159 ounce, 0.0045 gram 0805 MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Repetitive peak reverse voltage RMS Reverse voltage Mean rectifying current Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) Power dissipation Capacitance between terminals f=1MHz and applied 10VDC reverse voltage Storage temperature Operating temperature Symbol MAX. UNIT VRRM MIN. TYP. 40 V VR(RMS) 21 V IO 100 mA IFSM 4.0 A Pd 200 mW 10 pF CT TJ -55 +125 o C TSTG -55 +125 o C ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted) Symbol MIN. Forward voltage PARAMETER IF = 2.0 mA DC CONDITIONS VF 0.26 Forward voltage IF = 15 mA DC Forward voltage Reverse current Reverse current TYP. MAX. UNIT 0.33 V VF 0.45 V IF = 200 mA DC VF 1.00 V VR = 25 V IR 500 nA VR = 25 V , Tj =100 o C IR 100 uA RATING AND CHARACTERISTIC CURVES (ASD500V) FIG.1-TYPICAL FORWARD FIG.2 - TYPICAL REVERSE CHARACTERISTICS CHARACTERISTICS 1000m 100 INSTANTANEOUS FORWARD CURRENT,(A) Typ. pulse measurement 100m 5C REVERSE CURRENT , (uA) 10 10m 12 O O Ta = 75 C Ta = 1m O Ta = 25 C 100u O Ta = -25 C 10u 1u 0 0.2 0.4 0.6 0.8 1.0 1.2 FIG.3-TYPICAL TERMINALS CAPACITANCE CAPACITANCE BETWEEN TERMINALS ,(pF) 100 O Ta = 25 C f = 1MHz 50 20 10 5 2 2 4 6 8 10 REVERSE VOLTAGE , (V) 12 1.4 O Ta = 75 C 1 O Ta = 25 C 100n O Ta = -25 C 10n 1n 0 Typ. pulse measurement 5 10 15 20 25 REVERSE VOLTAGE , (V) FORWARD VOLTAGE,(V) 1 0 O Ta = 125 C 14 30 35