Formosa MS Chip Schottky Barrier Diodes FM5822V-A Silicon epitaxial planer type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.185(4.8) 0.177(4.4) 0.012(0.3) Typ. For surface mounted applications. 0.110(2.8) 0.094(2.4) Exceeds environmental standards of MIL-S-19500 / 228 0.165(4.2) 0.150(3.8) Low leakage current. 0.067(1.7) 0.060(1.5) 0.040(1.0) Typ. 0.040 (1.0) Typ. Dimensions in inches and (millimeters) Mechanical data Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting Position : Any Weight : 0.0015 ounce, 0.05 gram MARKING CODE : SK34 MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) MAX. UNIT Repetitive peak reverse voltage PARAMETER CONDITIONS Symbol VRRM 40 V RMS voltage VRMS 28 V VR 40 V IO 3.0 A A Continuous reverse voltage MIN. TYP. Forward rectified current Ambient temperature = 80o C Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) IFSM 80 Thermal resistance Junction to ambient RqJA 55 Diode junction capacitance f=1MHz and applied 4vDC reverse voltage CJ 250 Operating temperature Storage temperature o C / w pF TJ -50 +125 o C TSTG -50 +150 o C ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted) PARAMETER Forward voltage Reverse current CONDITIONS Symbol IF = 1.0 AMPERE DC VR = Peak reverse voltage TA = VF o 25 C VR = Peak reverse voltage TA = 100o C IR MIN. TYP. MAX. UNIT 0.40 V 0.5 mA 20 mA RATING AND CHARACTERISTIC CURVES (FM5822V-A) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE FIG.2-TYPICAL FORWARD 50 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE,( C) PEAK FORWAARD SURGE CURRENT,(A) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT INSTANTANEOUS FORWARD CURRENT,(A) AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 3.0 10 1.0 Tj=25 C Pulse Width 300us 1% Duty Cycle 0.1 100 .01 80 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) 60 8.3ms Single Half Tj=25 C Sine Wave 40 JEDEC method 20 FIG.5 - TYPICAL REVERSE CHARACTERISTICS 0 1 5 50 10 100 100 NUMBER OF CYCLES AT 60Hz REVERSE LEAKAGE CURRENT, (mA) FIG.4-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,(pF) 700 600 500 400 300 200 10 1.0 Tj=75 C Tj=25 C .1 100 0 .01 .05 .1 .5 1 REVERSE VOLTAGE,(V) 5 10 50 100 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)