FORMOSA FM5822V-A

Formosa MS
Chip Schottky Barrier Diodes
FM5822V-A
Silicon epitaxial planer type
Features
SMA
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
0.185(4.8)
0.177(4.4)
0.012(0.3) Typ.
For surface mounted applications.
0.110(2.8)
0.094(2.4)
Exceeds environmental standards of MIL-S-19500 /
228
0.165(4.2)
0.150(3.8)
Low leakage current.
0.067(1.7)
0.060(1.5)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
MARKING CODE : SK34
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
MAX.
UNIT
Repetitive peak reverse voltage
PARAMETER
CONDITIONS
Symbol
VRRM
40
V
RMS voltage
VRMS
28
V
VR
40
V
IO
3.0
A
A
Continuous reverse voltage
MIN.
TYP.
Forward rectified current
Ambient temperature = 80o C
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
80
Thermal resistance
Junction to ambient
RqJA
55
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
CJ
250
Operating temperature
Storage temperature
o
C / w
pF
TJ
-50
+125
o
C
TSTG
-50
+150
o
C
ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted)
PARAMETER
Forward voltage
Reverse current
CONDITIONS
Symbol
IF = 1.0 AMPERE DC
VR = Peak reverse voltage TA =
VF
o
25 C
VR = Peak reverse voltage TA = 100o C
IR
MIN.
TYP.
MAX.
UNIT
0.40
V
0.5
mA
20
mA
RATING AND CHARACTERISTIC CURVES (FM5822V-A)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
50
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE,( C)
PEAK FORWAARD SURGE CURRENT,(A)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
INSTANTANEOUS FORWARD CURRENT,(A)
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
3.0
10
1.0
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
100
.01
80
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
60
8.3ms Single Half
Tj=25 C
Sine Wave
40
JEDEC method
20
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
0
1
5
50
10
100
100
NUMBER OF CYCLES AT 60Hz
REVERSE LEAKAGE CURRENT, (mA)
FIG.4-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,(pF)
700
600
500
400
300
200
10
1.0
Tj=75 C
Tj=25 C
.1
100
0
.01
.05
.1
.5
1
REVERSE VOLTAGE,(V)
5
10
50
100
.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)