SMD Schottky Barrier Diode CDBG820-G THRU CDBG860-G (RoHS Device) Reverse Voltage: 20 ~ 60 Volts Forward Current: 8 A Features: G package Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.283(7.2) 0.260(6.6) 0.012(0.3) Typ. For surface mounted applications. Exceeds enviromental standards of MIL-S-19500/228 0.189(4.8) 0.165(4.2) 0.152(3.8) 0.144(3.6) Low leakage current Mechanical Data: 0.244(6.2) 0.228(5.8) Case: Molded plastic, G package (6.9mmx4.5mm) Terminals: Solder plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band Mounting position: Any Approx. Weight: 0.00585 ounce, 0.195 gram 0.098(2.5) 0.075(1.9) 0.032(0.8) Typ. 0.040(1.0) Typ. 0.040 (1.0) Typ. Dimensions in inches and (millimeters) o Maximum Ratings (at TA = 25 C unless otherwise noted) Parameter Symbol Marking Code CDBG820-G CDBG830-G CDBG840-G CDBG850-G CDBG860-G SS82 SS83 SS84 SS85 SS86 Unit Repetitive Peak Reverse Voltage VRRM 20 30 40 50 60 V RMS voltage VRMS 14 21 28 35 42 V Continuous reverse voltage VR 20 30 40 50 60 V Maximum forward voltage VF Max. Forward rectified current (See Fig.1) IO 8.0 A IFSM 150 A Max. Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Max. Reverse current o VR = VRRM TA = 25 C 0.55 Diode junction capacitance f=1MHz and applied 4vDC reverse Voltage Max. Storage temperature V 1.0 IR mA o VR = VRRM TA = 100 C Thermal resistance Junction Ambient 0.70 50 o C/ RJA 55 Cj 700 pF TSTG +150 oC Operating temperature -55 to +125 www.comchiptech.com o W C Page1 SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBG820-G THRU CDBG860-G) FIG.2-TYPICAL FORWARD CHARACTERISTICS 12 50 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 200 CASE TEMPERATURE,( C) PEAK FORWARD SURGE CURRENT,(A) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT INSTANTANEOUS FORWARD CURRENT,(A) AVERAGE FORWARD CURRENT,(A) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE 10 1.0 Tj=25 C Pulse Width 300us 1% Duty Cycle 0.1 250 .01 200 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) 150 8.3ms Single Half Tj=25 C Sine Wave 100 JEDEC method 50 FIG.5 - TYPICAL REVERSE CHARACTERISTICS 0 1 5 50 10 100 100 NUMBER OF CYCLES AT 60Hz REVERSE LEAKAGE CURRENT, (mA) FIG.4-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,(pF) 2800 2400 2000 1600 1200 800 10 Tj=75 C 1.0 Tj=25 C .1 400 0 .01 .05 .1 .5 1 REVERSE VOLTAGE,(V) 5 10 50 100 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)