Formosa MS Chip Schottky Barrier Diodes FM820 THRU FM860 Silicon epitaxial planer type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.276(7.0) 0.260(6.6) For surface mounted applications. 0.012(0.3) Typ. 0.152(3.8) 0.144(3.6) 0.189(4.8) 0.173(4.4) Exceeds environmental standards of MIL-S-19500 / 228 0.244(6.2) 0.228(5.8) Low leakage current. 0.087(2.2) 0.071(1.8) 0.032(0.8) Typ. 0.040(1.0) Typ. Mechanical data 0.040 (1.0) Typ. Dimensions in inches and (millimeters) Case : Molded plastic, JEDEC DO-214AB Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting Position : Any Weight : 0.00585 ounce, 0.195 gram o MAXIMUM RATINGS (AT TA=25 C unless otherwise noted) PARAMETER CONDITIONS Symbol Forward rectified current See Fig.1 Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) Junction to ambient Diode junction capacitance UNIT IO 8.0 A IFSM 150 A 5.0 mA f=1MHz and applied 4vDC reverse voltage *1 VRMS *2 VR *3 (V) (V) (V) FM820 SK82 20 14 20 FM830 SK83 30 21 30 FM840 SK84 40 28 40 FM850 SK85 50 35 50 FM860 SK86 60 42 60 VF *4 (V) 700 -55 C / w pF +150 o C Operating temperature (o C) *1 Repetitive peak reverse voltage *2 RMS voltage 0.65 *3 Continuous reverse voltage -55 to +125 0.70 mA o 55 CJ TSTG VRRM 50 Rq JA Storage temperature MARKING CODE MAX. IR VR = VRRM TA = 100o C Thermal resistance SYMBOLS TYP. 25o C VR = VRRM TA = Reverse current MIN. *4 Maximum forward voltage RATING AND CHARACTERISTIC CURVES (FM820 THRU FM860) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE FIG.2-TYPICAL FORWARD 50 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 200 CASE TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT INSTANTANEOUS FORWARD CURRENT,(A) AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 12 10 1.0 Tj=25 C Pulse Width 300us 1% Duty Cycle 0.1 PEAK FORWARD SURGE CURRENT,(A) 250 .01 200 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) 150 8.3ms Single Half Tj=25 C Sine Wave 100 JEDEC method 50 FIG.5 - TYPICAL REVERSE CHARACTERISTICS 0 1 5 50 10 100 100 NUMBER OF CYCLES AT 60Hz REVERSE LEAKAGE CURRENT, (mA) FIG.4-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,(pF) 2800 2400 2000 1600 1200 800 10 Tj=75 C 1.0 Tj=25 C .1 400 0 .01 .05 .1 .5 1 REVERSE VOLTAGE,(V) 5 10 50 100 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)