Formosa MS MELF Schottky Barrier Diodes SM5817 THRU SM5819 Silicon epitaxial planer type Features SM-1 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. .205(5.2) .190(4.8) SOLDERABLE ENDS .024(.60) .018(.46) Exceeds environmental standards of MIL-S-19500 / 228 .105(2.7) .095(2.4) Low leakage current. Dimensions in inches and (millimeters) Mechanical data Case : Molded plastic, SM-1 (MELF) Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting Position : Any Weight : 0.015 gram MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Symbol Forward rectified current See Fig.2 Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) 25o C VR = VRRM TA = Reverse current MAX. UNIT IO 1.0 A IFSM 25 A 1.0 mA 10 Junction to ambient Diode junction capacitance Rq JA f=1MHz and applied 4vDC reverse voltage Storage temperature MARKING CODE *1 V RMS *2 VR *3 VF *4 (V) (V) (V) (V) SM5817 - 20 14 20 0.45 SM5818 - 30 21 30 0.55 SM5819 - 40 28 40 0.60 110 -55 mA o 80 CJ TSTG V RRM TYP. IR VR = VRRM TA = 100o C Thermal resistance SYMBOLS MIN. C / w pF +150 o C Operating temperature ( o C) *1 Repetitive peak reverse voltage *2 RMS voltage -55 to +125 *3 Continuous reverse voltage *4 Maximum forward voltage RATING AND CHARACTERISTIC CURVES (SM5817 THRU SM5819) FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 3.0 18 SM 58 17 ~S M 58 19 10 SM 58 1.0 1.2 1.0 0.8 Single Phase 0.6 Half Wave 60Hz Resistive Or Inductive Load 0.4 0.2 0 0 20 40 Tj=25 C 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE ( C) Pulse Width 300us 1% Duty Cycle 0.1 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) FIG.3 - TYPICAL REVERSE CHARACTERISTICS PEAK FORWAARD SURGE CURRENT,(A) INSTANTANEOUS FORWARD CURRENT,(A) 50 25 20 15 8.3ms Single Half Tj=25 C Sine Wave 10 JEDEC method 5 0 1 100 5 50 10 100 FIG.5-TYPICAL JUNCTION CAPACITANCE 10 350 JUNCTION CAPACITANCE,(pF) REVERSE LEAKAGE CURRENT, (mA) NUMBER OF CYCLES AT 60Hz 1.0 Tj=75 C Tj=25 C .1 300 250 200 150 100 50 .01 0 0 20 40 60 80 .01 .05 .1 .5 1 100 120 140 PERCENTAGE RATED PEAK REVERSE VOLTAGE REVERSE VOLTAGE,(V) 5 10 50 100