www.ti.com SBVS045A − MARCH 2004 − REVISED FEBRUARY 2006 FEATURES APPLICATIONS D Two-Input, One-Output Power Multiplexer D D D D D D D With Low rDS(on) Switches: − 84 mΩ Typ (TPS2113A) − 120 mΩ Typ (TPS2112A) D Reverse and Cross-Conduction Blocking D Wide Operating Voltage Range . . . .2.8 V to 5.5 V D D D D Low Standby Current . . . . 0.5-µA Typ D D D D CMOS- and TTL-Compatible Control Inputs Low Operating Current . . . . 55-µA Typ PCs PDAs Digital Cameras Modems Cell Phones Digital Radios MP3 Players Adjustable Current Limit PW PACKAGE (TOP VIEW) Controlled Output Voltage Transition Times, Limits Inrush Current and Minimizes Output Voltage Hold-Up Capacitance Auto-Switching Operating Mode Thermal Shutdown STAT 1 8 IN1 EN 2 7 OUT VSNS 3 6 IN2 ILIM Available in TSSOP-8 and 3mm x 3mm SON-8 Packages DRB PACKAGE (TOP VIEW) 4 5 GND STAT 1 EN 2 VSNS 3 ILIM 4 8 IN1 7 OUT 6 IN2 5 GND GND DESCRIPTION The TPS211xA family of power multiplexers enables seamless transition between two power supplies, such as a battery and a wall adapter, each operating at 2.8−5.5 V and delivering up to 1 A. The TPS211xA family includes extensive protection circuitry, including user-programmable current limiting, thermal protection, inrush current control, seamless supply transition, cross-conduction blocking, and reverse-conduction blocking. These features greatly simplify designing power multiplexer applications. TYPICAL APPLICATION Switch Status IN1: 2.8 − 5.5 V R1 TPS2113APW 1 STAT 2 EN 3 4 VSNS ILIM IN1 8 7 OUT 6 IN2 5 GND 0.1 µF CL RL RILIM IN2: 2.8 − 5.5 V 0.1 µF Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. ! "#$ %!& % "! "! '! ! !( ! %% )*& % "!+ %! !!$* $%! !+ $$ "!!& Copyright 2004−2006, Texas Instruments Incorporated www.ti.com SBVS045A − MARCH 2004 − REVISED FEBRUARY 2006 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. AVAILABLE OPTIONS FEATURE TPS2110A TPS2111A TPS2112A TPS2113A TPS2114A TPS2115A Current Limit Adjustment Range 0.31−0.75A 0.63−1.25A 0.31−0.75A 0.63−1.25A 0.31−0.75A 0.63−1.25A Manual Yes Yes No No Yes Yes Automatic Yes Yes Yes Yes Yes Yes No No Yes Yes Yes Yes TSSOP-8 TSSOP-8 TSSOP-8 TSSOP-8 TSSOP-8 TSSOP-8 Switching Modes Switch Status Output Package ORDERING INFORMATION TA PACKAGE −40°C to 85°C ORDERING NUMBER(1) MARKINGS TPS2112APW 2112A TSSOP-8 (PW) TPS2113APW 2113A (1) The PW package is available taped and reeled. Add an R suffix to the device type (e.g., TPS2112APWR) to indicate tape and reel. PACKAGE DISSIPATION RATINGS TA ≤ 25°C POWER RATING TA = 70°C POWER RATING TA = 85°C POWER RATING TSSOP-8 (PW) DERATING FACTOR ABOVE TA = 25°C 3.9 mW/°C 387 mW 213 mW 155 mW SON-8 (DRB) 25.0 mW/°C 2.50 W 1.38 W 1.0 W PACKAGE ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range unless otherwise noted(1) TPS2112A, TPS2113A Input voltage range at pins IN1, IN2, EN, VSNS, ILIM(2) Output voltage range, VO(OUT), VO(STAT)(2) −0.3 V to 6 V −0.3 V to 6 V Output sink current, IO(STAT) Continuous output current, IO 5 mA TPS2112A 0.9 A TPS2113A 1.5 A Continuous total power dissipation See Dissipation Rating Table Operating virtual junction temperature range, TJ −40°C to 125°C Storage temperature range, Tstg −65°C to 150°C Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds 260°C (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltages are with respect to GND. RECOMMENDED OPERATING CONDITIONS MIN MAX UNIT 1.5 5.5 Input voltage at IN1, VI(IN1) VI(IN2) ≥ 2.8 V VI(IN2) < 2.8 V 2.8 5.5 VI(IN1) ≥ 2.8 V VI(IN1) < 2.8 V 1.5 5.5 Input voltage at IN2, VI(IN2) 2.8 5.5 0 5.5 TPS2112A 0.31 0.75 TPS2113A 0.63 1.25 −40 125 Input voltage, VI(EN), VI(VSNS) Current limit adjustment range, IO(OUT) Operating virtual junction temperature, TJ 2 V V V A °C www.ti.com SBVS045A − MARCH 2004 − REVISED FEBRUARY 2006 ELECTROSTATIC DISCHARGE (ESD) PROTECTION MIN MAX UNIT Human body model CDM 2 kV 500 V ELECTRICAL CHARACTERISTICS over recommended operating junction temperature range, VI(IN1) = VI(IN2) = 5.5 V, RILIM = 400 Ω (unless otherwise noted) TPS2112A PARAMETER TEST CONDITIONS MIN TPS2113A TYP MAX VI(IN1) = VI(IN2) = 5.0 V 120 VI(IN1) = VI(IN2) = 3.3 V 120 VI(IN1) = VI(IN2) = 2.8 V 120 MIN TYP MAX 140 84 110 140 84 110 140 84 110 UNIT POWER SWITCH TJ = 25°C, IL = 500 mA Drain-source on-state resistance (INx−OUT) rDS(on)(1) TJ = 125°C, IL = 500 mA VI(IN1) = VI(IN2) = 5.0 V 220 150 VI(IN1) = VI(IN2) = 3.3 V 220 150 VI(IN1) = VI(IN2) = 2.8 V 220 150 mΩ mΩ (1) The TPS211xA can switch a voltage as low as 1.5 V as long as there is a minimum of 2.8 V at one of the input power pins. In this specific case, the lower supply voltage has no effect on the IN1 and IN2 switch on-resistances. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT LOGIC INPUTS (EN) VIH VIL High-level input voltage 2 V Low-level input voltage 0.7 EN = High, sink current Input current EN = Low, source current 1 0.5 1.4 5 VI(VSNS) = 1.5 V, EN = Low (IN1 active), VI(IN1) = 5.5 V, VI(IN2) = 3.3 V, IO(OUT) = 0 A 55 90 VI(VSNS) = 1.5 V, EN = Low (IN1 active), VI(IN1) = 3.3 V, VI(IN2) = 5.5 V, IO(OUT) = 0 A 1 12 V µA SUPPLY AND LEAKAGE CURRENTS Supply current from IN1 (operating) Supply current from IN2 (operating) VI(VSNS) = 0 V, EN = Low (IN2 active), VI(IN1) = 5.5 V, VI(IN2) = 3.3 V, IO(OUT) = 0 A 75 VI(VSNS) = 0 V, EN = Low (IN2 active), VI(IN1) = 3.3 V, VI(IN2) = 5.5 V, IO(OUT) = 0 A 1 VI(VSNS) = 1.5 V, EN = Low (IN1 active), VI(IN1) = 5.5 V, VI(IN2) = 3.3 V, IO(OUT) = 0 A 1 VI(VSNS) = 1.5 V, EN =Low (IN1 active), VI(IN1) = 3.3 V, VI(IN2) = 5.5 V, IO(OUT) = 0 A 75 VI(VSNS) = 0 V, EN = Low (IN2 active), VI(IN1) = 5.5 V, VI(IN2) = 3.3 V, IO(OUT) = 0 A 1 12 VI(VSNS) = 0 V, EN = Low (IN2 active), VI(IN1) = 3.3 V, VI(IN2) = 5.5 V, IO(OUT) = 0 A 55 90 Quiescent current from IN1 (STANDBY) EN = High (inactive), VI(IN1) = 5.5 V, VI(IN2) = 3.3 V, IO(OUT) = 0 A 0.5 2 Quiescent current from IN2 (STANDBY) EN = High (inactive), VI(IN1) = 5.5 V, VI(IN2) = 3.3 V, IO(OUT) = 0 A EN = High (inactive), VI(IN1) = 3.3 V, VI(IN2) = 5.5 V, IO(OUT) = 0 A 1 1 µA µA µA µA EN = High (inactive), VI(IN1) = 3.3 V, VI(IN2) = 5.5 V, IO(OUT) = 0 A 0.5 2 Forward leakage current from IN1 (measured from OUT to GND) EN = High (inactive), VI(IN1) = 5.5 V, IN2 open, VO(OUT) = 0 V (shorted), TJ = 25°C 0.1 5 µA Forward leakage current from IN2 (measured from OUT to GND) EN = High (inactive), VI(IN2) = 5.5 V, IN1 open, VO(OUT) = 0 V (shorted), TJ = 25°C 0.1 5 µA Reverse leakage current to INx (measured from INx to GND) EN = High (inactive), VI(INx) = 0 V, VO(OUT) = 5.5 V, TJ = 25°C 0.3 5 µA µA STAT OUTPUT Leakage current VO(STAT) = 5.5 V 0.01 1 Saturation voltage II(STAT) = 2 mA, IN1 switch is on 0.13 0.4 Deglitch time (falling edge only) 150 V µs 3 www.ti.com SBVS045A − MARCH 2004 − REVISED FEBRUARY 2006 ELECTRICAL CHARACTERISTICS (Continued) over recommended operating junction temperature range, VI(IN1) = VI(IN2) = 5.5 V, RILIM = 400 Ω (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CURRENT LIMIT CIRCUIT TPS2112A RILIM = 400 Ω RILIM = 700 Ω 0.51 0.63 0.80 0.30 0.36 0.50 TPS2113A RILIM = 400 Ω RILIM = 700 Ω 0.95 1.25 1.56 0.47 0.71 0.99 Current limit accuracy td Current limit settling time(1) Time for short-circuit output current to settle within 10% of its steady state value. Input current at ILIM VI(ILIM) = 0 V, IO(OUT) = 0 A 1 −15 A ms 0 µA (1) Not tested in production. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VSNS COMPARATOR VI(VSNS) ↑ VI(VSNS) ↓ VSNS threshold voltage 0.78 0.8 0.82 0.735 0.755 0.775 150 220 µs 1 µA VSNS comparator hysteresis(1) 30 Deglitch of VSNS comparator (both ↑↓)(1) 90 0 V ≤ VI(VSNS) ≤ 5.5 V Input current 60 −1 V mV UVLO Falling edge IN1 and IN2 UVLO 1.15 Rising edge IN1 and IN2 UVLO hysteresis(1) Falling edge Internal VDD UVLO (the higher of IN1 and IN2) Internal VDD UVLO hysteresis(1) UVLO deglitch for IN1, IN2(1) 1.25 1.30 1.35 30 57 65 2.4 2.53 Rising edge 30 Falling edge 2.58 2.8 50 75 V mV V mV µs 110 (1) Not tested in production. MIN TYP MAX UNIT 80 100 120 mV TEST CONDITIONS MIN TYP MAX UNIT Thermal shutdown threshold(1) TPS211xA is in current limit. 135 Recovery from thermal shutdown(1) Hysteresis(1) TPS211xA is in current limit. 125 PARAMETER TEST CONDITIONS REVERSE CONDUCTION BLOCKING ∆VO(I_block) Minimum output-to-input voltage difference to block switching PARAMETER EN = high, VI(IN1) = 3.3 V and VI(IN2) = VI(VSNS) = 0 V. Connect OUT to a 5 V supply through a series 1-kΩ resistor. Let EN = low. Slowly decrease the supply voltage until OUT connects to IN1. THERMAL SHUTDOWN °C C 10 IN2−IN1 COMPARATORS Hysteresis of IN2−IN1 comparator 0.1 Deglitch of IN2−IN1 comparator (both ↑↓)(1) (1) Not tested in production. 10 4 20 0.2 V 50 µs www.ti.com SBVS045A − MARCH 2004 − REVISED FEBRUARY 2006 SWITCHING CHARACTERISTICS over recommended operating junction temperature range, VI(IN1) = VI(IN2) = 5.5 V, RILIM = 400 Ω (unless otherwise noted) TPS2112A PARAMETER TEST CONDITIONS TPS2113A MIN TYP MAX MIN TYP MAX UNIT POWER SWITCH tr Output rise time from an enable(1) VI(IN1) = VI(IN2) = 5 V, VI(VSNS) = 1.5 V TJ = 25°C, CL = 1 µF, IL = 500 mA, See Figure 1(a) 0.5 1.0 1.5 1 1.8 3 ms tf Output fall time from a disable(1) VI(IN1) = VI(IN2) = 5 V, VI(VSNS) = 1.5 V TJ = 25°C, CL = 1 µF, IL = 500 mA, See Figure 1(a) 0.35 0.5 0.7 0.5 1 2 ms tt Transition time(1) IN1 to IN2 transition, VI(IN1) = 3.3 V, VI(IN2) = 5 V, VI(EN) = 0 V TJ = 125°C, CL = 10 µF, IL = 500 mA [Measure transition time as 10−90% rise time or from 3.4 V to 4.8 V on VO(OUT)], See Figure 1(b) 40 60 40 60 µs tPLH1 Turn-on propagation delay from enable(1) TJ = 25°C, CL = 10 µF, IL = 500 mA, See Figure 1(a) 0.5 1 ms tPHL1 Turn-off propagation delay from a disable(1) TJ = 25°C, CL = 10 µF, IL = 500 mA, See Figure 1(a) 3 5 ms TJ = 25°C, CL = 10 µF, IL = 500 mA, See Figure 1(c) 40 100 3 10 tPLH2 Switch-over rising propagation delay(1) tPHL2 Switch-over falling propagation delay(1) VI(IN1) = VI(IN2) = 5 V Measured from enable to 10% of VO(OUT), VI(VSNS) = 1.5 V VI(IN1) = VI(IN2) = 5 V, Measured from disable to 90% of VO(OUT), VI(VSNS) = 1.5 V Logic 1 to Logic 0 transition on VSNS , VI(IN1) = 1.5 V, VI(IN2) = 5 V, VI(EN) = 0 V, Measured from VSNS to 10% of VO(OUT) Logic 0 to Logic 1 transition on VSNS VI(IN1) = 1.5V, VI(IN2) = 5V, VI(EN) = 0 V, Measured from VSNS to 90% of VO(OUT) TJ = 25°C, CL = 10 µF, IL = 500 mA, See Figure 1(c) 2 2 40 100 µs 5 10 ms (1) Not tested in production. 5 www.ti.com SBVS045A − MARCH 2004 − REVISED FEBRUARY 2006 TRUTH TABLE EN VI(VSNS) > 0.8V Yes 0 1 VI(IN2) > VI(IN1) X STAT OUT(1) 0 IN1 IN1 No No 0 No Yes Hi-Z IN2 X X 0 Hi-Z X = Don’t care. (1)The under-voltage lockout circuit causes the output OUT to go Hi-Z if the selected power supply does not exceed the IN1/IN2 UVLO, or if neither of the supplies exceeds the internal VDD UVLO. Terminal Functions TERMINAL NAME NO. I/O DESCRIPTION EN 2 I EN is a TTL- and CMOS-compatible input with a 1-µA pull-up. The truth table shown above illustrates the functionality of EN. GND 5 I Ground IN1 8 I Primary power switch input. The IN1 switch can be enabled only if the IN1 supply is above the UVLO threshold and at least one supply exceeds the internal VDD UVLO. IN2 6 I Secondary power switch input. The IN2 switch can be enabled only if the IN2 supply is above the UVLO threshold and at least one supply exceeds the internal VDD UVLO. ILIM 4 I A resistor RILIM from ILIM to GND sets the current limit IL to 250/RILIM and 500/RILIM for the TPS2112A and TPS2113A, respectively. OUT 7 O Power switch output STAT 1 O STAT is an open-drain output that is Hi-Z if the IN2 switch is ON. STAT pulls low if the IN1 switch is ON or if OUT is Hi-Z (i.e., EN is equal to logic 0) VSNS 3 I An internal power FET connects OUT to IN1 if the VSNS voltage is greater than 0.8 V. Otherwise, the FET connects OUT to the higher of IN1 and IN2. The truth table shown above illustrates the functionality of VSNS. 6 www.ti.com SBVS045A − MARCH 2004 − REVISED FEBRUARY 2006 FUNCTIONAL BLOCK DIAGRAM Internal VDD 1 µA IN1 IN2 Vf = 0 V Vf = 0 V IO(OUT) Q1 8 Q2 6 7 Charge Pump VDD ULVO IN2 ULVO Cross-Conduction Detector IN1 ULVO + _ 0.6 V + EN2 OUT k* IO(OUT) _ TPS2112A: k = 0.2% TPS2113A: k = 0.1% + 0.5 V 4 ILIM + _ EN1 Q1 is ON Q2 is ON UVLO (VDD) VO(OUT) > VI(INx) UVLO (IN2) UVLO (IN1) 100 mV + + _ EN1 EN VSNS GND 2 Control Logic 3 5 0.8 V + _ VI(VSNS) >0.8 V Thermal Sense VI(IN2) > VI(IN1) IN2 + _ IN1 1 STAT Q2 is ON 7 www.ti.com SBVS045A − MARCH 2004 − REVISED FEBRUARY 2006 PARAMETER MEASUREMENT INFORMATION 90% 90% VO(OUT) 10% 10% 0V tr tf tPLH1 tPHL1 EN Switch Off Switch Enabled Switch Off (a) 5V 4.8 V VO(OUT) 3.4 V 3.3 V tt VSNS Switch #2 Enabled Switch #1 Enabled (b) 5V VO(OUT) 1.5 V 4.65 V 1.85 V tPLH2 tPHL2 VSNS Switch #1 Enabled Switch #2 Enabled Switch #1 Enabled (c) Figure 1. Propagation Delays and Transition Timing Waveforms 8 www.ti.com SBVS045A − MARCH 2004 − REVISED FEBRUARY 2006 TYPICAL CHARACTERISTICS OUTPUT SWITCHOVER RESPONSE 3.3 V TPS2113APW VI(VSNS) NC 2 f = 28 Hz 22% Duty Cycle 2V/DIV 1 3 4 STAT EN VSNS ILIM 400 Ω 0.1 µF IN1 8 7 OUT 6 1 µF IN2 GND 50 Ω 5 5V VO(OUT) 0.1 µF 2V/DIV Output Switchover Response Test Circuit t − Time − 1 ms/div Figure 2 OUTPUT TURN-ON RESPONSE VI(EN) 2V/Div 5V TPS2113APW f = 28 Hz 78% Duty Cycle NC 1 2 3 4 400 Ω STAT EN VSNS ILIM IN1 0.1 µF 8 7 OUT IN2 GND 6 1 µF 50 Ω 5 VO(OUT) 2V/Div Output Turn-On Response Test Circuit t − Time − 2 ms/div Figure 3 9 www.ti.com SBVS045A − MARCH 2004 − REVISED FEBRUARY 2006 TYPICAL CHARACTERISTICS OUTPUT SWITCHOVER VOLTAGE DROOP VI(VSNS) 2V/Div CL = 1 µF VO(OUT) 2V/Div CL = 0 µF t − Time − 40 µs/div 5V SW1 1 kΩ TPS2113APW NC f = 580 Hz 90% Duty Cycle 1 2 STAT EN 3 VSNS 4 ILIM IN1 0.1 µF 8 7 OUT IN2 GND 6 5 CL 50 Ω 400 Ω 0.1 µF Output Switchover Voltage Droop Test Circuit Figure 4 NOTE: To initialize the TPS2113A for this test, set input VSNS equal to 0 V, turn on the 5 V supply, and then turn on switch SW1. 10 www.ti.com SBVS045A − MARCH 2004 − REVISED FEBRUARY 2006 TYPICAL CHARACTERISTICS OUTPUT SWITCHOVER VOLTAGE DROOP vs LOAD CAPACITANCE 5 VI = 5 V ∆ VO(OUT) − Output Voltage Droop − V 4.5 4 3.5 RL = 10 Ω 3 2.5 2 1.5 RL = 50 Ω 1 0.5 0 0.1 VI 1 10 CL − Load Capacitance − µF SW1 TPS2113APW f = 28 Hz 50% Duty Cycle 1 STAT 2 EN 3 VSNS 4 ILIM 400 Ω NC 0.1 µF 100 1 kΩ IN1 8 7 OUT 6 IN2 5 GND 50 Ω 0.1 µF 0.1 µF 1 µF 10 µF 47 µF 10 Ω 100 µF Output Switchover Voltage Droop Test Circuit Figure 5 NOTE: To initialize the TPS2113A for this test, set input VSNS equal to 0 V, turn on the supply Vi, and then turn on switch SW1. 11 www.ti.com SBVS045A − MARCH 2004 − REVISED FEBRUARY 2006 TYPICAL CHARACTERISTICS AUTO SWITCHOVER VOLTAGE DROOP VI(IN1) 2V/Div 5V TPS2113A 1kΩ 1 STAT 2 f = 220 Hz 20% Duty Cycle EN 3 4 400Ω VO(OUT) 2V/Div VSNS ILIM 8 IN1 7 OUT 6 IN2 5 GND 0.1 µF VOUT 3.3V 10 µF 0.1 µF 75% less output voltage droop compared to TPS2113 Auto Switchover Voltage Droop Test Circuit t − Time − 250 µs/div 12 Figure 6 50 Ω www.ti.com SBVS045A − MARCH 2004 − REVISED FEBRUARY 2006 TYPICAL CHARACTERISTICS INRUSH CURRENT vs LOAD CAPACITANCE 300 − Inrush Current − mA 250 200 VI = 5 V 150 VI = 3.3 V I I 100 50 0 0 VI f = 28 Hz 90% Duty Cycle 20 40 60 80 CL − Load Capacitance − µF 100 TPS2113APW 1 NC 2 3 4 400 Ω STAT EN VSNS ILIM IN1 OUT IN2 GND 8 0.1 µF To Oscilloscope 7 6 5 50 Ω 0.1 µF 1 µF 10 µF 47 µF 100 µF Output Capacitor Inrush Current Test Circuit Figure 7 13 www.ti.com SBVS045A − MARCH 2004 − REVISED FEBRUARY 2006 TYPICAL CHARACTERISTICS SWITCH ON-RESISTANCE vs SUPPLY VOLTAGE SWITCH ON-RESISTANCE vs JUNCTION TEMPERATURE 120 rDS(on) − Switch On-Resistance − m Ω rDS(on) − Switch On-Resistance − m Ω 180 160 TPS2112A 140 120 TPS2113A 100 80 60 −50 TPS2112A 115 110 105 100 95 90 TPS2113A 85 80 0 50 100 TJ − Junction Temperature − °C 2 150 3 4 5 VI(INx) − Supply Voltage − V Figure 8 Figure 9 IN1 SUPPLY CURRENT vs SUPPLY VOLTAGE IN1 SUPPLY CURRENT vs SUPPLY VOLTAGE 0.96 60 Device Disabled VI(IN2) = 0 V IO(OUT) = 0 A IN1 Switch is ON VI(IN2) = 0 , IO(OUT) = 0 A 58 I(IN1) − IN1 Supply Current − µ A 0.94 0.92 0.90 0.88 0.86 I I I(IN1) − IN1 Supply Current − µ A 6 56 54 52 50 48 46 44 0.84 42 40 0.82 2 3 4 5 VI(IN1)− IN1 Supply Voltage − V Figure 10 14 6 2 3 4 5 VI(IN1) − Supply Voltage − V Figure 11 6 www.ti.com SBVS045A − MARCH 2004 − REVISED FEBRUARY 2006 TYPICAL CHARACTERISTICS SUPPLY CURRENT vs JUNCTION TEMPERATURE SUPPLY CURRENT vs JUNCTION TEMPERATURE 1.2 70 I I(INx) − Supply Current − µ A I I(INx) − Supply Current − µ A 1 80 Device Disabled VI(IN1) = 5.5 V VI(IN2) = 3.3 V IO(OUT) = 0 A II(IN1) = 5.5 V 0.8 0.6 0.4 60 IN1 Switch is ON VI(IN1) = 5.5 V VI(IN2) = 3.3 V IO(OUT) = 0 A II(IN1) 50 40 30 20 0.2 10 II(IN2) = 3.3 V 0 −50 0 50 100 TJ − Junction Temperature − °C Figure 12 150 0 −50 II(IN2) 0 50 100 TJ − Junction Temperature − °C 150 Figure 13 15 www.ti.com SBVS045A − MARCH 2004 − REVISED FEBRUARY 2006 APPLICATION INFORMATION Some applications have two energy sources, one of which should be used in preference to another. Figure 14 shows a circuit that will connect IN1 to OUT until the voltage at IN1 falls below a user-specified value. Once the voltage on IN1 falls below this value, the TPS2112A/3A will select the higher of the two supplies. This usually means that the TPS2112A/3A will swap to IN2. Switch Status IN1: 2.8 − 5.5 V R3 TPS2113APW 1 R1 2 3 4 R2 IN1 STAT OUT EN VSNS IN2 ILIM GND 8 0.1 µF 7 6 RL CL 5 RILIM IN2: 2.8 − 5.5 V 0.1 µF Figure 14. Auto-Selecting for a Dual Power Supply Application In Figure 15, the multiplexer selects between two power supplies based upon the EN logic signal. OUT connects to IN1 if EN is logic 1; otherwise, OUT connects to IN2. The logic thresholds for the EN terminal are compatible with both TTL and CMOS logic. Switch Status IN1: 2.8 − 5.5 V TPS2113APW 1 2 3 4 STAT EN VSNS ILIM IN1 OUT IN2 GND 0.1 µF 8 7 6 5 CL RILIM IN2: 2.8 − 5.5 V 0.1 µF Figure 15. Manually Switching Power Sources 16 R1 RL www.ti.com SBVS045A − MARCH 2004 − REVISED FEBRUARY 2006 DETAILED DESCRIPTION AUTO-SWITCHING MODE The TPS2112A/3A only supports the auto-switching mode. In this mode, OUT connects to IN1 if VI(VSNS) is greater than 0.8 V, otherwise OUT connects to the higher of IN1 and IN2. The VSNS terminal includes hysteresis equal to 3.75–7.5% of the threshold selected for transition from the primary supply to the higher of the two supplies. This hysteresis helps avoid repeated switching from one supply to the other due to resistive drops. N-CHANNEL MOSFETs Two internal high-side power MOSFETs implement a single-pole double-throw (SPDT) switch. Digital logic selects the IN1 switch, IN2 switch, or no switch (Hi-Z state). The MOSFETs have no parallel diodes so output-to-input current cannot flow when the FET is off. An integrated comparator prevents turn-on of a FET switch if the output voltage is greater than the input voltage. CROSS-CONDUCTION BLOCKING The switching circuitry ensures that both power switches will never conduct at the same time. A comparator monitors the gate-to-source voltage of each power FET and allows a FET to turn on only if the gate-to-source voltage of the other FET is below the turn-on threshold voltage. REVERSE-CONDUCTION BLOCKING When the TPS211xA switches from a higher-voltage supply to a lower-voltage supply, current can potentially flow back from the load capacitor into the lower-voltage supply. To minimize such reverse conduction, the TPS211xA will not connect a supply to the output until the output voltage has fallen to within 100 mV of the supply voltage. Once a supply has been connected to the output, it will remain connected regardless of output voltage. CHARGE PUMP The higher of supplies IN1 and IN2 powers the internal charge pump. The charge pump provides power to the current limit amplifier and allows the output FET gate voltage to be higher than the IN1 and IN2 supply voltages. A gate voltage that is higher than the source voltage is necessary to turn on the N-channel FET. CURRENT LIMITING A resistor RILIM from ILIM to GND sets the current limit to 250/RILIM and 500/RILIM for the TPS2112A and TPS2113A, respectively. Setting resistor RILIM equal to zero is not recommended as that disables current limiting. OUTPUT VOLTAGE SLEW-RATE CONTROL The TPS2112A/3A slews the output voltage at a slow rate when OUT switches to IN1 or IN2 from the Hi-Z state (see Truth Table). A slow slew rate limits the inrush current into the load capacitor. High inrush currents can glitch the voltage bus and cause a system to hang up or reset. It can also cause reliability issues—like pit the connector power contacts, when hot-plugging a load such as a PCI card. The TPS2112A/3A slews the output voltage at a much faster rate when OUT switches between IN1 and IN2. The fast rate minimizes the output voltage droop and reduces the output voltage hold-up capacitance requirement. 17 PACKAGE OPTION ADDENDUM www.ti.com 6-Dec-2006 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TPS2112APW ACTIVE TSSOP PW 8 150 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS2112APWG4 ACTIVE TSSOP PW 8 150 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS2112APWR ACTIVE TSSOP PW 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS2112APWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS2113ADRBR PREVIEW SON DRB 8 3000 TPS2113ADRBT PREVIEW SON DRB 8 250 TPS2113APW ACTIVE TSSOP PW 8 150 TPS2113APWG4 ACTIVE TSSOP PW 8 150 TPS2113APWR ACTIVE TSSOP PW TPS2113APWRG4 ACTIVE TSSOP PW TBD Lead/Ball Finish MSL Peak Temp (3) Call TI Call TI TBD Call TI Call TI Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1 MECHANICAL DATA MTSS001C – JANUARY 1995 – REVISED FEBRUARY 1999 PW (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE 14 PINS SHOWN 0,30 0,19 0,65 14 0,10 M 8 0,15 NOM 4,50 4,30 6,60 6,20 Gage Plane 0,25 1 7 0°– 8° A 0,75 0,50 Seating Plane 0,15 0,05 1,20 MAX PINS ** 0,10 8 14 16 20 24 28 A MAX 3,10 5,10 5,10 6,60 7,90 9,80 A MIN 2,90 4,90 4,90 6,40 7,70 9,60 DIM 4040064/F 01/97 NOTES: A. B. C. D. All linear dimensions are in millimeters. This drawing is subject to change without notice. Body dimensions do not include mold flash or protrusion not to exceed 0,15. Falls within JEDEC MO-153 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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