FORMOSA SUL32-AL

Formosa MS
Low VF Chip Schottky Barrier Diodes
SUL32-AL
Silicon epitaxial planer type
Features
SMA-L
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
For surface mounted applications.
0.110(2.8)
0.094(2.4)
Exceeds environmental standards of MIL-S-19500 /
228
0.181(4.6)
0.165(4.2)
Low leakage current.
0.075(1.9)
0.067(1.7)
0.040(1.0) Typ.
Mechanical data
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
MAXIMUM RATINGS (AT T A =25 o C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
Forward rectified current
See Fig.2
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
25 o C
V R = V RRM T A =
Reverse current
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
L32
UNIT
IO
3.0
A
I FSM
30
A
1.5
mA
Rq JA
Storage temperature
SUL32-AL
MAX.
20
Junction to ambient
MARKING
CODE
*1
V RMS
*2
VR
*3
VF
*4
Operating
temperature
(V)
(V)
(V)
(V)
(o C)
20
14
20
0.30
-55 to +125
130
-55
mA
o
50
CJ
T STG
V RRM
TYP.
IR
V R = V RRM T A = 100 o C
Thermal resistance
SYMBOLS
MIN.
C / w
pF
+150
o
C
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
RATING AND CHARACTERISTIC CURVES (SUL32-AL)
FIG.1-TYPICAL FORWARD
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
10
3.0
1.0
1.2
3.0
2.4
Single Phase
1.8
Half Wave 60Hz
Resistive Or Inductive Load
1.2
0.6
0
0
20
40
Tj=25 C
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE ( C)
Pulse Width 300us
1% Duty Cycle
0.1
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
.01
.1
.2
.3
.4
.5
.6
.7
.8
FORWARD VOLTAGE,(V)
FIG.3 - TYPICAL REVERSE
CHARACTERISTICS
PEAK FORWAARD SURGE CURRENT,(A)
INSTANTANEOUS FORWARD CURRENT,(A)
50
100
80
60
8.3ms Single Half
Tj=25 C
Sine Wave
40
JEDEC method
20
0
1
100
5
50
10
100
FIG.5-TYPICAL JUNCTION CAPACITANCE
10
Tj=75 C
700
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
NUMBER OF CYCLES AT 60Hz
1.0
Tj=25 C
.1
600
500
400
300
200
100
.01
0
0
20
40
60
80
.01
.05
.1
.5
1
100 120 140
PERCENTAGE RATED PEAK REVERSE VOLTAGE
REVERSE VOLTAGE,(V)
5
10
50
100