Formosa MS Low VF Chip Schottky Barrier Diodes SUL32-AL Silicon epitaxial planer type Features SMA-L Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.205(5.2) 0.189(4.8) 0.012(0.3) Typ. For surface mounted applications. 0.110(2.8) 0.094(2.4) Exceeds environmental standards of MIL-S-19500 / 228 0.181(4.6) 0.165(4.2) Low leakage current. 0.075(1.9) 0.067(1.7) 0.040(1.0) Typ. Mechanical data 0.040 (1.0) Typ. Dimensions in inches and (millimeters) Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting Position : Any Weight : 0.0015 ounce, 0.05 gram MAXIMUM RATINGS (AT T A =25 o C unless otherwise noted) PARAMETER CONDITIONS Symbol Forward rectified current See Fig.2 Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) 25 o C V R = V RRM T A = Reverse current Diode junction capacitance f=1MHz and applied 4vDC reverse voltage L32 UNIT IO 3.0 A I FSM 30 A 1.5 mA Rq JA Storage temperature SUL32-AL MAX. 20 Junction to ambient MARKING CODE *1 V RMS *2 VR *3 VF *4 Operating temperature (V) (V) (V) (V) (o C) 20 14 20 0.30 -55 to +125 130 -55 mA o 50 CJ T STG V RRM TYP. IR V R = V RRM T A = 100 o C Thermal resistance SYMBOLS MIN. C / w pF +150 o C *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage RATING AND CHARACTERISTIC CURVES (SUL32-AL) FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 10 3.0 1.0 1.2 3.0 2.4 Single Phase 1.8 Half Wave 60Hz Resistive Or Inductive Load 1.2 0.6 0 0 20 40 Tj=25 C 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE ( C) Pulse Width 300us 1% Duty Cycle 0.1 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT .01 .1 .2 .3 .4 .5 .6 .7 .8 FORWARD VOLTAGE,(V) FIG.3 - TYPICAL REVERSE CHARACTERISTICS PEAK FORWAARD SURGE CURRENT,(A) INSTANTANEOUS FORWARD CURRENT,(A) 50 100 80 60 8.3ms Single Half Tj=25 C Sine Wave 40 JEDEC method 20 0 1 100 5 50 10 100 FIG.5-TYPICAL JUNCTION CAPACITANCE 10 Tj=75 C 700 JUNCTION CAPACITANCE,(pF) REVERSE LEAKAGE CURRENT, (mA) NUMBER OF CYCLES AT 60Hz 1.0 Tj=25 C .1 600 500 400 300 200 100 .01 0 0 20 40 60 80 .01 .05 .1 .5 1 100 120 140 PERCENTAGE RATED PEAK REVERSE VOLTAGE REVERSE VOLTAGE,(V) 5 10 50 100