TI SN65220IDBVRQ1

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SGLS297 − FEBRUARY 2005
DBV
(TOP VIEW)†
FEATURES
D Qualification in Accordance With
D
D
D
D
D
(1) Contact Texas Instruments for details. Q100 qualification data
available on request.
APPLICATIONS
D USB 1.1 Host, Hub, or Peripheral Ports
DESCRIPTION
The SN65220 is a single transient voltage suppressor
designed to provide electrical noise transient protection to
universal serial bus (USB) 1.1 ports. Note that the input
capacitance of the device makes it unsuitable for
high-speed USB 2.0 applications.
Any cabled I/O can be subjected to electrical noise
transients from various sources. These noise transients
can cause damage to the USB transceiver and/or the USB
ASIC if they are of sufficient magnitude and duration.
USB ports are typically implemented in 3-V or 5-V digital
CMOS with limited ESD protection. The SN65220 can
significantly increase the port ESD protection level and
reduce the risk of damage to the circuits of the USB port.
The IEC1000-4-2 ESD performance of the SN65220 is
measured at the system level. Therefore, system design
impacts the results of these tests. A high compliance level
may be attained with proper board design and layout.
1
GND
2
NC
3
6
A
5
GND
4
B
NC − No internal connection
†When read horizontally, pin 1 is the bottom left pin.
CURRENT vs VOLTAGE
7.5
5
2.5
Current − A
D
NC
SAMI
D
D
AEC-Q100(1)
Qualified for Automotive Applications
Customer-Specific Configuration Control
Can Be Supported Along With
Major-Change Approval
Design to Protect Submicron 3-V or 5-V
Circuits from Noise Transients
Port ESD Protection Capability Exceeds:
− 15-kV Human Body Model
− 2-kV Machine Model
Available in a WCSP Chip-Scale Package
Stand-Off Voltage . . . 6 V Min
Low Current Leakage . . . 1 µA Max at 6 V
Low Capacitance . . . 35 pF Typ
0
−2.5
−5
−7.5
−10
−10
−5
0
5
10
15
Voltage − V
NOTE A:
Typical current versus voltage curve was derived
using the IEC 1.2/50-µs surge waveform.
EQUIVALENT SCHEMATIC DIAGRAM
A or C
GND
B or D
(One Suppressor Shown)
NOTE: All GND terminals should be connected to ground.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
!"# $"%&! '#( '"!
! $#!! $# )# # #* "# '' +,(
'"! $!#- '# #!#&, !&"'# #- && $##(
Copyright  1997 − 2004, Texas Instruments Incorporated
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SGLS297 − FEBRUARY 2005
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate
precautions. Failure to observe proper handling and installation procedures can cause damage.
IEC1000-4-2 COMPLIANCE LEVEL
MAXIMUM TEST VOLTAGE
IEC1000-4-2
COMPLIANCE
LEVEL
CONTACT
DISCHARGE
(kV)
AIR
DISCHARGE
(kV)
1
2
2
2
4
4
3
6
8
4
8
15
PACKAGE/ORDERING INFORMATION
PRODUCT
SUPRESSORS
TA
PACKAGE
PACKAGE
DESIGNATOR
MARKED
AS
ORDER NUMBER
SN65220
1
−40°C to 85°C
SOT23−6
DBV
SAMI
SN65220IDBVRQ1
(Mini Reel)
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted(1)
UNIT
Continuous power dissipation
See Dissipation Rating Table
15 kV(2), 2 kV(3)
Electrostatic discharge
Peak power dissipation, PD(peak)
60 W
Peak forward surge current, IFSM
3A
Peak reverse surge current, IRSM
−9 A
Storage temperature range, Tstg
−65°C to 150°C
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is
not implied.
(2) Human Body Model − Tested in accordance with JEDEC Standard 22, Test Method A114−A.
(3) Charged Device Model − Tested in accordance with JEDEC Standard 22, Test Method C101.
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C‡
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
DBV
385 mW
3.1 mW/°C
246 mW
200 mW
‡ This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow.
recommended operating conditions
Operating free-air temperature, TA
2
MIN
MAX
−40
85
UNIT
°C
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SGLS297 − FEBRUARY 2005
electrical characteristics over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Ilkg
V(BR)
Leakage current
Breakdown voltage
VI = 6 V at A, B, C, or D terminals
VI = 1 mA at A, B, C, or D terminals
CIN
Input capacitance to ground
VI = 0.4 sin (4E6πt) + 0.5 V
MIN
TYP
MAX
1
6.5
7
35
8
UNIT
µA
V
pF
APPLICATION INFORMATION
Full-Speed or
Low-Speed USB
Host-or-Hub Port
Transceiver
Full-Speed or
Low-Speed USB
Down Stream
Transceiver
1.5 kΩ
(Full Speed Only)
27 Ω
D+
A
A
15 kΩ
GND
SN65220
SN65220
15 kΩ
27 Ω
B
27 Ω
D+
D−
D−
B
GND
1.5 kΩ
(Low Speed
Only)
27 Ω
3
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