FUJI 6MBI35S-120L

6-Pack IGBT
1200V
6x35A
6MBI 35S-120L
n Outline Drawing
IGBT MODULE ( S-Series )
n Features
• NPT-Technologie
• Solderable Package
• Square SC SOA at 10 x IC
• High Short Circuit Withstand-Capability
• Small Temperature Dependence of the Turn-Off
Switching Loss
• Low Losses And Soft Switching
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n Maximum Ratings and Characteristics
n Equivalent Circuit
• Absolute Maximum Ratings
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current (25°C / 80°C)
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
( Tc=25°C)
Symbols
VCES
VGES
Continuous
IC
1ms
IC PULSE
Continuous
-IC
1ms
-IC PULSE
PC
Tj
Tstg
A.C. 1min.
Vis
Mounting *1
Ratings
1200
± 20
50 / 35
100 / 70
50 / 35
100 / 70
280
+150
-40 ∼ +125
2500
3.5
Units
V
V
A
W
°C
°C
V
Nm
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
• Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at Tj=25°C )
Symbols
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr
tOFF
tf
VF
trr
Test Conditions
VGE=0V VCE=1200V
VCE=0V VGE=± 20V
VGE=20V IC=35mA
VGE=15V IC=35A
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=35A
VGE=± 15V
RG=33Ω
IF=35A VGE=0V
IF=35A
Min.
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
6.0
Max.
1.0
200
9.0
2.1
4200
Units
mA
µA
V
V
pF
0.60
0.40
0.45
0.10
1.2
0.6
1.0
0.3
3.3
350
µs
V
ns
• Thermal Characteristics
Items
Thermal Resistance
Typ.
0.05
Max.
0.44
0.80
Units
°C/W
For more information, contact:
Collmer Semiconductor, Inc.
P.O. Box 702708
Dallas, TX 75370
972-233-1589
972-233-0481 Fax
http://www.collmer.com