n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics n Equivalent Circuit • Absolute Maximum Ratings ( Tc=25°C) Symbols VCES VGES DC Tc= 25°C IC 25 Collector Current DC Tc=100°C IC 100 1ms Tc= 25°C IC PULSE IGBT Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Mounting Screw Torque Items Collector-Emitter Voltage Gate -Emitter Voltage • Electrical Characteristics Units V V A W °C °C Nm ( at Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Switching Time Ratings 1200 ± 20 38 25 114 310 +150 -40 ∼ +150 70 Turn-on Time Turn-off Time Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=25mA VGE=15V IC=25A VGE=0V VCE=10V f=1MHz VCC=600V IC=25A VGE=±15V RG=82Ω VCC=600V IC=25A VGE=+15V RG=8Ω Min. Symbols Rth(j-c) Test Conditions IGBT Min. Typ. 5.5 Max. 1.0 20 8.5 3.5 2500 500 200 Units mA µA V pF 1.2 0.6 1.5 0.5 0.16 0.11 0.30 µs µs 0.5 • Thermal Characteristics Items Thermal Resistance Typ. Max. 0.40 Units °C/W Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage T j= 2 5 ° C 60 T j= 1 2 5 ° C 60 V GE = 2 0 V , 1 5 V V GE = 2 0 V , 1 5 V 50 12V [A] C 40 Collector Current : I Collector Current : I C [A] 12V 10V 30 20 40 10V 20 10 8V 8V 0 0 0 1 2 3 4 5 6 0 1 Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage vs. Gate-Emitter Voltage 5 6 [V] 10 CE [V] 8 Collector-Emitter Voltage : V Collector-Emitter Voltage : V CE 10 6 IC = 50A 4 25A 12.5A 2 8 6 IC = 4 50A 25A 2 12.5A 0 0 5 10 15 20 25 0 Gate-Emitter Voltage : V GE [V] 5 10 15 20 25 Gate-Emitter Voltage : V GE [V] Switching Time vs. Collector Current Switching Time vs. Collector Current V CC = 6 0 0 V , R G=8.2 Ω , V GE = ± 1 5 V , T j= 2 5 ° C V CC = 6 0 0 V , R G =8.2 Ω , V GE= ± 1 5 V , T j= 1 2 5 ° C , t r, t off , t f [nsec] 1000 t off t on t off 1000 tf t on tr on tf on , t r, t off , t f [nsec] 4 T j= 1 2 5 ° C 12 0 tr 100 Switching Time : t Switching Time : t 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 2 5 ° C 12 2 Collector-Emitter Voltage : V CE [V] 100 10 10 0 10 20 30 Collector Current : I C [A] 40 0 10 20 30 Collector Current : I C [A] 40 50 Switching Time vs. R G V CC =600V, I C = 2 5 A , V GE = ± 1 5 V , T j= 1 2 5 ° C , t r, t off , t f [nsec] , t r, t off , t f [nsec] Switching Time vs. R G V CC =600V, I C = 2 5 A , V GE = ± 1 5 V , T j= 2 5 ° C t off 1000 t on on tf Switching Time : t Switching Time : t on tr t off t on 1000 tf 100 tr 100 10 0 20 40 60 80 100 0 20 40 60 80 G a t e R e s i s t a n c e : R G [Ω ] G a t e R e s i s t a n c e : R G [Ω ] Capacitance vs. Collector-Emitter Voltage Dynamic Input Characteristics T j= 2 5 ° C 100 T j= 2 5 ° C 1000 10000 25 800 20 Capacitance : C C oes 100 GE Collector-Emitter Voltage : V oes 1000 C res 600 15 400 10 200 5 0 10 0 5 10 15 20 25 30 0 35 Reverse Recovery Time vs. Forward Current V R= 2 0 0 V , 300 -di 50 100 150 200 250 300 350 G a t e C h a r g e : Q G [nQ] 400 0 450 Reverse Recovery Current vs. Forward Current / dt= 1 0 0 A / µ s e c V R= 2 0 0 V , 16 -di / dt = 1 0 0 A / µ s e c 125°C 125°C 12 Reverse Recovery Current : I rr rr [A] [nsec] 14 Reverse Recovery Time : t 200 25°C 100 10 8 25°C 6 4 2 0 0 0 10 20 30 Forward Current : I F [A] 40 50 0 10 20 30 Forward Current : I F [A] 40 50 Gate-Emitter Voltage : V C res C ies [pF] CE C ies 400V 600V 800V [V] [V] VCC= Typical Short Circuit Capability Reverse Biased Safe Operating Area V CC = 8 0 0 V , R G =8.2 Ω , T j= 1 2 5 ° C + V GE= 1 5 V , - V GE< 1 5 V , T j< 1 2 5 ° C , R G > 8.2 Ω 60 300 50 250 60 Short Circuit Current : I Collector Current : I 30 20 10 150 100 20 50 0 0 0 200 400 600 800 1000 1200 5 1400 10 15 0 25 20 Gate Voltage : V GE [µs] 40 SC I SC 200 Short Circuit Time : t SC 40 C [A] [A] t SC [V] Collector-Emitter Voltage : V CE [V] -di Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current / dt V R = 2 0 0 V , I F = 2 5 A , T j= 1 2 5 ° C 25 1000 T j= 1 2 5 ° C 2 5 ° C I rr 800 20 600 15 400 10 Forward Current : I 30 20 10 0 0,0 t rr 5 200 0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0 50 100 150 -di Forward Voltage : V F [V] / dt 200 250 0 300 [A/µsec] Thermal Resistance : Rth(j-c) [°C/W] Transient Thermal Resistance 10 10 1 0 IGBT 10 -1 -2 10 -4 10 10 -3 10 -2 10 -1 10 0 Pulse Width : P W [sec] P.O. Box 702708-Dallas, 75370 PhoneTX (972) 233-1589 Fax- (972) P.O. BoxTX 702708 - Dallas, - (972) 733-1700 (972) 233-0481 381-9991 www.collmer.com (fax) Reverse Recovery Current : I rr Reverse Recovery Time : t 40 F [A] rr [nsec] 50 [A] 60