FUJI 1MBH25-120

n Outline Drawing
Fuji Discrete Package IGBT
n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Minimized Internal Stray Inductance
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n Maximum Ratings and Characteristics
n Equivalent Circuit
• Absolute Maximum Ratings
( Tc=25°C)
Symbols
VCES
VGES
DC Tc= 25°C
IC 25
Collector Current
DC Tc=100°C
IC 100
1ms Tc= 25°C
IC PULSE
IGBT Max. Power Dissipation
PC
Operating Temperature
Tj
Storage Temperature
Tstg
Mounting Screw Torque
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
• Electrical Characteristics
Units
V
V
A
W
°C
°C
Nm
( at Tj=25°C )
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Switching Time
Ratings
1200
± 20
38
25
114
310
+150
-40 ∼ +150
70
Turn-on Time
Turn-off Time
Symbols
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr
tOFF
tf
tON
tr
tOFF
tf
Test Conditions
VGE=0V VCE=1200V
VCE=0V VGE=± 20V
VGE=20V IC=25mA
VGE=15V IC=25A
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=25A
VGE=±15V
RG=82Ω
VCC=600V
IC=25A
VGE=+15V
RG=8Ω
Min.
Symbols
Rth(j-c)
Test Conditions
IGBT
Min.
Typ.
5.5
Max.
1.0
20
8.5
3.5
2500
500
200
Units
mA
µA
V
pF
1.2
0.6
1.5
0.5
0.16
0.11
0.30
µs
µs
0.5
• Thermal Characteristics
Items
Thermal Resistance
Typ.
Max.
0.40
Units
°C/W
Collector Current vs. Collector-Emitter Voltage
Collector Current vs. Collector-Emitter Voltage
T j= 2 5 ° C
60
T j= 1 2 5 ° C
60
V GE = 2 0 V , 1 5 V
V GE = 2 0 V , 1 5 V
50
12V
[A]
C
40
Collector Current : I
Collector Current : I
C
[A]
12V
10V
30
20
40
10V
20
10
8V
8V
0
0
0
1
2
3
4
5
6
0
1
Collector-Emitter Voltage : V CE [V]
Collector-Emitter Voltage vs. Gate-Emitter Voltage
5
6
[V]
10
CE
[V]
8
Collector-Emitter Voltage : V
Collector-Emitter Voltage : V
CE
10
6
IC =
50A
4
25A
12.5A
2
8
6
IC =
4
50A
25A
2
12.5A
0
0
5
10
15
20
25
0
Gate-Emitter Voltage : V GE [V]
5
10
15
20
25
Gate-Emitter Voltage : V GE [V]
Switching Time vs. Collector Current
Switching Time vs. Collector Current
V CC = 6 0 0 V , R G=8.2 Ω , V GE = ± 1 5 V , T j= 2 5 ° C
V CC = 6 0 0 V , R G =8.2 Ω , V GE= ± 1 5 V , T j= 1 2 5 ° C
, t r, t off , t f [nsec]
1000
t off
t on
t off
1000
tf
t on
tr
on
tf
on
, t r, t off , t f [nsec]
4
T j= 1 2 5 ° C
12
0
tr
100
Switching Time : t
Switching Time : t
3
Collector-Emitter Voltage vs. Gate-Emitter Voltage
T j= 2 5 ° C
12
2
Collector-Emitter Voltage : V CE [V]
100
10
10
0
10
20
30
Collector Current : I C [A]
40
0
10
20
30
Collector Current : I C [A]
40
50
Switching Time vs. R G
V CC =600V, I C = 2 5 A , V GE = ± 1 5 V , T j= 1 2 5 ° C
, t r, t off , t f [nsec]
, t r, t off , t f [nsec]
Switching Time vs. R G
V CC =600V, I C = 2 5 A , V GE = ± 1 5 V , T j= 2 5 ° C
t off
1000
t on
on
tf
Switching Time : t
Switching Time : t
on
tr
t off
t on
1000
tf
100
tr
100
10
0
20
40
60
80
100
0
20
40
60
80
G a t e R e s i s t a n c e : R G [Ω ]
G a t e R e s i s t a n c e : R G [Ω ]
Capacitance vs. Collector-Emitter Voltage
Dynamic Input Characteristics
T j= 2 5 ° C
100
T j= 2 5 ° C
1000
10000
25
800
20
Capacitance : C
C oes
100
GE
Collector-Emitter Voltage : V
oes
1000
C res
600
15
400
10
200
5
0
10
0
5
10
15
20
25
30
0
35
Reverse Recovery Time vs. Forward Current
V R= 2 0 0 V ,
300
-di
50
100 150 200 250 300 350
G a t e C h a r g e : Q G [nQ]
400
0
450
Reverse Recovery Current vs. Forward Current
/ dt= 1 0 0 A / µ s e c
V R= 2 0 0 V ,
16
-di
/ dt = 1 0 0 A / µ s e c
125°C
125°C
12
Reverse Recovery Current : I
rr
rr
[A]
[nsec]
14
Reverse Recovery Time : t
200
25°C
100
10
8
25°C
6
4
2
0
0
0
10
20
30
Forward Current : I F [A]
40
50
0
10
20
30
Forward Current : I F [A]
40
50
Gate-Emitter Voltage : V
C res C ies [pF]
CE
C ies
400V
600V
800V
[V]
[V]
VCC=
Typical Short Circuit Capability
Reverse Biased Safe Operating Area
V CC = 8 0 0 V , R G =8.2 Ω , T j= 1 2 5 ° C
+ V GE= 1 5 V , - V GE< 1 5 V , T j< 1 2 5 ° C , R G > 8.2 Ω
60
300
50
250
60
Short Circuit Current : I
Collector Current : I
30
20
10
150
100
20
50
0
0
0
200
400
600
800
1000
1200
5
1400
10
15
0
25
20
Gate Voltage : V GE
[µs]
40
SC
I SC
200
Short Circuit Time : t
SC
40
C
[A]
[A]
t SC
[V]
Collector-Emitter Voltage : V CE [V]
-di
Reverse Recovery Characteristics vs.
Forward Voltage vs. Forward Current
/ dt
V R = 2 0 0 V , I F = 2 5 A , T j= 1 2 5 ° C
25
1000
T j= 1 2 5 ° C 2 5 ° C
I rr
800
20
600
15
400
10
Forward Current : I
30
20
10
0
0,0
t rr
5
200
0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0
50
100
150
-di
Forward Voltage : V F [V]
/ dt
200
250
0
300
[A/µsec]
Thermal Resistance : Rth(j-c) [°C/W]
Transient Thermal Resistance
10
10
1
0
IGBT
10
-1
-2
10
-4
10
10
-3
10
-2
10
-1
10
0
Pulse Width : P W [sec]
P.O. Box 702708-Dallas,
75370
PhoneTX
(972)
233-1589
Fax- (972)
P.O. BoxTX
702708
- Dallas,
- (972)
733-1700
(972) 233-0481
381-9991 www.collmer.com
(fax)
Reverse Recovery Current : I
rr
Reverse Recovery Time : t
40
F
[A]
rr
[nsec]
50
[A]
60