HIGH-POWER INFRARED PULSED LASER DIODE L7055-04 Figure 2: Typical Radiant Power vs. Pulsed Forward Current Figure 3: Typical Emission Spectrum (Ta=25℃) 100 RELATIVE RADIANT POWER (%) (Ｗ) 30 20 10 10 20 30 ■FEATURES ●High output power (φep≦20W) ●High speed rise time (tr=0.5 ns typ.) 60 40 20 0 830 0 PULSED FORWARD CURRENT IFP (A) ■APPLICATIONS 850 870 890 ●Laser rader ●Range finder ●Excitation light source ●Optical trigger ●Security barrier 910 WAVELENGTH (nm) Figure 4: Typical Directivity (IFP=20 A, Ta=25℃) Figure 1: Dimensional Outline (Unit: mm) 5.7 ± 0.2 2.8 ± 0.3 60 Top View 2.4 LD Chip Top View 40 ■ABSOLUTE MAXIMUM RATINGS 20 Parameter 0 40 30 20 10 0 10 20 30 Symbol Value Unit IFP 30 A Pulsed Foward Current 40 Reverse Voltage ANGLE (degree) Pulsed Radiant Output Power Handling Precautions for L7055-04 1. Precautions for handling The LD (laser diode) may be damaged or its performance may deteriorate due to such factors as electrostatic discharge from the human body, surge voltages from measurement equipment, leakage voltages from soldering irons, and packing materials. As a countermeasure against static electricity, the device, operator, work place and measuring jigs must all be set at the same electric potential. In using LD, observe the following precautions: ・To protect the device from static electricity charges which accumulate on the operator or the operator’s clothes, use a wrist strap etc. to ground the operator’s body via a high impedance resistor (1MΩ). ・A semiconductive sheet should be laid on both the work table and the floor in the work area. When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10MΩ. ・For containers for transportation and packing, use of antistatic material (material that minimizes the generation of static change when rubbed against or separated from itself or other similar materials). 2. Precautions for mounting (1)Lead forming To form the leads, hold the base of the leads securely and bend them so that no force is applied to the package. Lead forming should be done before soldering. (2)Cutting off the leads If leads are out when still at a high temperature, this may cause an electrical discontinuity. Always cut off the leads when they are at room temperature. Never cut off the leads immediately after they are soldered. (3)Soldering Using a low-temperature melting solder (below 200℃), solder the leads at the temperature and dwell time specified as follows. Maximum Soldering Temperature: 230℃ Maximum Soldering Time: 5 seconds (1 second for devices having a lead length less than 2mm) If these conditions cannot be met, it is recommended that some form of heat sink be used at the base of the lead so that the solder heat is not conducted to the package. Also be careful not to apply excessive force to the leads during soldering. Soldering at excessive temperatures and dwell times may cause the roots of the leads to crack, resulting in performance deterioration. This sometimes leads to wiring breakage. If the leads are soldered while external force is applied to the device, the residual force tends to degrade device performance. Care should also be taken not to apply force to the leads during soldering. In addition, when soldering an LD. use a soldering iron with its metallic parts grounded to prevent damage to the device from static discharge. Do not use any flux which is highly acidic. alkaline or inorganic because it may cause the component leads to erode. Use a rosin flux. 3.Protection against laser beams The LD is classified into class 3B according to the laser product standards of the lEC825-1 (Radiation safety of laser products Part1: Equipment classification, requirements and user’s guide). The operator must avoid eye or skin exposure to the laser beam. When viewing the laser beam, be sure to wear safety goggles that block infrared radiation. Pulse Duration (FWHM) HAMAMATSU PHOTONICS K.K., International Sales Division 325-6, Sunayama-cho, Hamamatsu City, 430-8587, Japan, Telephone: (81)53-452-2141, Fax: (81)53-456-7889 2 V 40 W tw 100 ns Duty Ratio DR 0.075 % Operating Temperature Top -30 to +85 ℃ Storage Temperature Tstg -40 to +125 ℃ 0.45 2.54 Side View 1.0 NC (Case) (Pin Connection) Anode Cathode Anode Cathode Bottom View ■ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25℃) Parameter Pulsed Radiant Power Symbol Condition Min. Typ. Max. Unit φep IFP=20A 20 - - W Peak Emission Wavelength λp - 870 - nm Spectral Radiation Half Bandwidth Δλ - 4 - nm - Forward Voltage VF Rise Time tr Beam Spread Angle : Parallel θ// : Vertical θ⊥ Lasing Threshold Current http://www.hamamatsu.com VR φep 5.1 ± 0.5 80 +0 9.0 -0.1 Glass Window Vertical Direction Parallel Direction 1.5 RELATIVE RADIANT POWER (%) 100 7.0 ± 0.5 0 80 0.4 ep L7055-04 (Ta=25℃) 40 PULSED RADIANT POWER HIGH-POWER INFRARED PULSED LASER DIODE 6 - V - 0.5 - ns FWHM 6 8 10 degree IFP=20A 29 32 35 degree - 1 - A IFP=20A Ith Note: General operating conditionφep≦20 W, tw≦50 ns, Repetition frequency≦8 kHz U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33(1) 69 53 71 00, Fax: 33(1) 69 53 71 10, E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Smidesv gen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: [email protected] Cat. No. LLD1004E02 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: [email protected] Jul. 1999 T Printed in Japan (1,000) Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. C 1998 Hamamatsu Photonics K.K. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ○ HIGH-POWER INFRARED PULSED LASER DIODE L7055-04 Figure 2: Typical Radiant Power vs. Pulsed Forward Current Figure 3: Typical Emission Spectrum (Ta=25℃) 100 RELATIVE RADIANT POWER (%) (Ｗ) 30 20 10 10 20 30 ■FEATURES ●High output power (φep≦20W) ●High speed rise time (tr=0.5 ns typ.) 60 40 20 0 830 0 PULSED FORWARD CURRENT IFP (A) ■APPLICATIONS 850 870 890 ●Laser rader ●Range finder ●Excitation light source ●Optical trigger ●Security barrier 910 WAVELENGTH (nm) Figure 4: Typical Directivity (IFP=20 A, Ta=25℃) Figure 1: Dimensional Outline (Unit: mm) 5.7 ± 0.2 2.8 ± 0.3 60 Top View 2.4 LD Chip Top View 40 ■ABSOLUTE MAXIMUM RATINGS 20 Parameter 0 40 30 20 10 0 10 20 30 Symbol Value Unit IFP 30 A Pulsed Foward Current 40 Reverse Voltage ANGLE (degree) Pulsed Radiant Output Power Handling Precautions for L7055-04 1. Precautions for handling The LD (laser diode) may be damaged or its performance may deteriorate due to such factors as electrostatic discharge from the human body, surge voltages from measurement equipment, leakage voltages from soldering irons, and packing materials. As a countermeasure against static electricity, the device, operator, work place and measuring jigs must all be set at the same electric potential. In using LD, observe the following precautions: ・To protect the device from static electricity charges which accumulate on the operator or the operator’s clothes, use a wrist strap etc. to ground the operator’s body via a high impedance resistor (1MΩ). ・A semiconductive sheet should be laid on both the work table and the floor in the work area. When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10MΩ. ・For containers for transportation and packing, use of antistatic material (material that minimizes the generation of static change when rubbed against or separated from itself or other similar materials). 2. Precautions for mounting (1)Lead forming To form the leads, hold the base of the leads securely and bend them so that no force is applied to the package. Lead forming should be done before soldering. (2)Cutting off the leads If leads are out when still at a high temperature, this may cause an electrical discontinuity. Always cut off the leads when they are at room temperature. Never cut off the leads immediately after they are soldered. (3)Soldering Using a low-temperature melting solder (below 200℃), solder the leads at the temperature and dwell time specified as follows. Maximum Soldering Temperature: 230℃ Maximum Soldering Time: 5 seconds (1 second for devices having a lead length less than 2mm) If these conditions cannot be met, it is recommended that some form of heat sink be used at the base of the lead so that the solder heat is not conducted to the package. Also be careful not to apply excessive force to the leads during soldering. Soldering at excessive temperatures and dwell times may cause the roots of the leads to crack, resulting in performance deterioration. This sometimes leads to wiring breakage. If the leads are soldered while external force is applied to the device, the residual force tends to degrade device performance. Care should also be taken not to apply force to the leads during soldering. In addition, when soldering an LD. use a soldering iron with its metallic parts grounded to prevent damage to the device from static discharge. Do not use any flux which is highly acidic. alkaline or inorganic because it may cause the component leads to erode. Use a rosin flux. 3.Protection against laser beams The LD is classified into class 3B according to the laser product standards of the lEC825-1 (Radiation safety of laser products Part1: Equipment classification, requirements and user’s guide). The operator must avoid eye or skin exposure to the laser beam. When viewing the laser beam, be sure to wear safety goggles that block infrared radiation. Pulse Duration (FWHM) HAMAMATSU PHOTONICS K.K., International Sales Division 325-6, Sunayama-cho, Hamamatsu City, 430-8587, Japan, Telephone: (81)53-452-2141, Fax: (81)53-456-7889 2 V 40 W tw 100 ns Duty Ratio DR 0.075 % Operating Temperature Top -30 to +85 ℃ Storage Temperature Tstg -40 to +125 ℃ 0.45 2.54 Side View 1.0 NC (Case) (Pin Connection) Anode Cathode Anode Cathode Bottom View ■ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25℃) Parameter Pulsed Radiant Power Symbol Condition Min. Typ. Max. Unit φep IFP=20A 20 - - W Peak Emission Wavelength λp - 870 - nm Spectral Radiation Half Bandwidth Δλ - 4 - nm - Forward Voltage VF Rise Time tr Beam Spread Angle : Parallel θ// : Vertical θ⊥ Lasing Threshold Current http://www.hamamatsu.com VR φep 5.1 ± 0.5 80 +0 9.0 -0.1 Glass Window Vertical Direction Parallel Direction 1.5 RELATIVE RADIANT POWER (%) 100 7.0 ± 0.5 0 80 0.4 ep L7055-04 (Ta=25℃) 40 PULSED RADIANT POWER HIGH-POWER INFRARED PULSED LASER DIODE 6 - V - 0.5 - ns FWHM 6 8 10 degree IFP=20A 29 32 35 degree - 1 - A IFP=20A Ith Note: General operating conditionφep≦20 W, tw≦50 ns, Repetition frequency≦8 kHz U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33(1) 69 53 71 00, Fax: 33(1) 69 53 71 10, E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Smidesv gen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: [email protected] Cat. No. LLD1004E02 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: [email protected] Jul. 1999 T Printed in Japan (1,000) Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. C 1998 Hamamatsu Photonics K.K. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ○