HA-2840 CT ODU 850 R P 2 TE r HAOLE o OBS A-2540 H e Se Features A 625V/µs slew rate and a 600MHz gain bandwidth product ensure high performance in video and RF amplifier designs. Differential gain and phase are a low 0.03% and 0.03 degrees respectively, making the HA-2840 ideal for video applications. A full ±10V output swing, high open loop gain, and outstanding AC parameters, make the HA-2840 an excellent choice for high speed Data Acquisition Systems. The HA-2840 is available in commercial and industrial temperature ranges, and a choice of packages. See the “Ordering Information” below for more information. For military grade product, refer to the HA-2840/883 data sheet. • • • • • • • • Low Supply Current . . . . . . . . . . . . . . . . . . . . . . . . . 13mA Very High Slew Rate . . . . . . . . . . . . . . . . . . . . . . 625V/µs Open Loop Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . 25kV/V Wide Gain-Bandwidth (AV ≥ 10) . . . . . . . . . . . . . . 600MHz Full Power Bandwidth . . . . . . . . . . . . . . . . . . . . . . . 10MHz Low Offset Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .0.6mV Differential Gain/Phase. . . . . . . . . . . 0.03%/0.03 Degrees Enhanced Replacement for EL2039 Applications • • • • Pulse and Video Amplifiers Wideband Amplifiers High Speed Sample-Hold Circuits RF Oscillators Pinouts HA-2840 (CERDIP, PDIP, SOIC) TOP VIEW Part Number Information PACKAGE PKG. NO. HA3B2840-5 0 to 75 14 Ld PDIP E14.3 HA3-2840-5 0 to 75 8 Ld PDIP E8.3 HA9P2840-5 (H28405) 0 to 75 8 Ld SOIC M8.15 HA3B2840-9 -40 to 85 14 Ld PDIP E14.3 HA7-2840-9 -40 to 85 8 Ld CERDIP F8.3A HA3-2840-9 -40 to 85 8 Ld PDIP E8.3 NC 1 8 NC -IN 2 7 V+ +IN 3 6 OUT V- 4 5 NC + TEMP. RANGE (oC) HA-2840 (PDIP) TOP VIEW NC 1 14 NC NC 2 13 NC NC 3 12 NC -IN 4 11 V+ +IN 5 + The HA-2840 is a wideband, very high slew rate, operational amplifier featuring superior speed and bandwidth characteristics. Bipolar construction, coupled with dielectric isolation, delivers outstanding performance in circuits with a closed loop gain of 10 or greater. PART NUMBER (BRAND) File Number 2842.3 - 600MHz, Very High Slew Rate Operational Amplifier September 1998 - Semiconductor 10 OUT V- 6 9 NC NC 7 8 NC NOTE: No Connection (NC) pins may be tied to a ground plane for better isolation and heat dissipation. 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Copyright © Harris Corporation 1998 HA-2840 Absolute Maximum Ratings Thermal Information Voltage Between V+ and V- Terminals. . . . . . . . . . . . . . . . . . . . 35V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Thermal Resistance (Typical, Note 2) θJA (oC/W) θJC (oC/W) 14 Lead PDIP Package . . . . . . . . . . . . . . 80 N/A 8 Lead CERDIP Package. . . . . . . . . . . . . 135 50 8 Lead PDIP Package . . . . . . . . . . . . . . . 96 N/A 8 Lead SOIC Package . . . . . . . . . . . . . . . 157 N/A Maximum Internal Quiescent Power Dissipation (Note 1) Maximum Junction Temperature (Ceramic Package) . . . . . . . 175oC Maximum Junction Temperature (Plastic Package) . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range HA-2840-5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 75oC HA-2840-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC Recommended Supply Voltage Range . . . . . . . . . . . . ±7V to ±15V CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Maximum power dissipation with load conditions must be designed to maintain the maximum junction temperature below 175oC for ceramic packages and below 150oC for plastic packages. 2. θJA is measured with the component mounted on an evaluation PC board in free air. VSUPPLY = ±15V, RL = 1kΩ, CL ≤ 10pF, Unless Otherwise Specified Electrical Specifications HA-2840-5, -9 TEMP (oC) MIN TYP MAX UNITS 25 - 0.6 2 mV Full - 2 6 mV Average Offset Voltage Drift Full - 20 - µV/oC Bias Current (Note 8) 25 - 5 14.5 µA Full - 8 20 µA 25 - 1 4 µA Full - - 8 µA Input Resistance 25 - 10 - kΩ Input Capacitance 25 - 1 - pF Common Mode Range Full ±10 - - V PARAMETER TEST CONDITIONS INPUT CHARACTERISTICS Offset Voltage (Note 8) Offset Current Input Noise Voltage (Note 8) f = 1kHz, RSOURCE = 0Ω 25 - 6 - nV ⁄ Hz Input Noise Current (Note 8) f = 1kHz, RSOURCE = 10kΩ 25 - 6 - pA ⁄ Hz Note 3 25 20 25 - kV/V Full 15 20 - kV/V Full 75 80 - dB 25 10 - - V/V VO = 90mV, AV = +100 25 - 600 - MHz Output Voltage Swing (Note 8) Note 3 Full ±10 - - V Output Current (Note 8) Note 3 Full ±10 ±20 - mA 25 - 30 - Ω TRANSFER CHARACTERISTICS Large Signal Voltage Gain Common-Mode Rejection Ratio (Note 8) VCM = ±10V Minimum Stable Gain Gain Bandwidth Product (Note 8) OUTPUT CHARACTERISTICS Output Resistance Full Power Bandwidth (Note 4) Note 3 25 8.7 10 - MHz Differential Gain (Note 7) AV = 10 25 - 0.03 - % 2 HA-2840 Electrical Specifications VSUPPLY = ±15V, RL = 1kΩ, CL ≤ 10pF, Unless Otherwise Specified (Continued) HA-2840-5, -9 PARAMETER TEST CONDITIONS TEMP (oC) MIN TYP MAX UNITS Differential Phase (Note 7) AV = 10 25 - 0.03 - Degrees Harmonic Distortion (Note 8) AV = 10, VO = 2VP-P, f = 1MHz 25 - -79 - dBc Rise Time 25 - 4 - ns Overshoot 25 - 20 - % TRANSIENT RESPONSE (Note 5) Slew Rate (Notes 6, 8) Note 3 25 550 625 - V/µs Settling Time 10V Step to 0.1% 25 - 180 - ns Full - 13 15 mA Full 75 90 - dB POWER REQUIREMENTS Supply Current (Note 8) VS = ±10V to ±20V Power Supply Rejection Ratio (Note 8) NOTES: 3. RL = 1kΩ, VO = ±10V, 0V to ±10V for slew rate. Slew Rate 4. Full Power Bandwidth guaranteed based on slew rate measurement using: FPBW = --------------------------- ; ( V . PEAK = 10V ) 2πV PEAK 5. Refer to Test Circuit section of data sheet. 6. This parameter is not tested. The limits are guaranteed based on lab characterization, and reflect lot-to-lot variation. 7. Differential gain and phase are measured with a VM700A video tester, using a NTC-7 composite VITS. 8. See “Typical Performance Curves” for more information. Test Circuits and Waveforms IN + OUT - 900Ω 9. VS = ±15V. 100Ω 10. AV = +10. 11. CL < 10pF. TEST CIRCUIT INPUT INPUT OUTPUT OUTPUT Input = 1V/Div. Output = 5V/Div. 50ns/Div. LARGE SIGNAL RESPONSE 3 Input = 10mV/Div. Output = 100mV/Div. 50ns/Div. SMALL SIGNAL RESPONSE HA-2840 Test Circuits and Waveforms (Continued) V+ 0.001µF NOTES: 12. AV = -10. 13. Load Capacitance should be less than 10pF. 200Ω INPUT - 1µF + 0.001µF OUTPUT PROBE MONITOR 500Ω V- 1µF 2kΩ 5kΩ SETTLING POINT 14. It is recommended that resistors be carbon composition and that feedback and summing network ratios be matched to 0.1%. 15. SETTLING POINT (Summing Node) capacitance should be less than 10pF. For optimum settling time results, it is recommended that the test circuit be constructed directly onto the device pins. A Tektronix 568 Sampling Oscilloscope with S-3A sampling heads is recommended as a settle point monitor. SETTLING TIME TEST CIRCUIT Typical Performance Curves TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ, CL < 10pF, Unless Otherwise Specified 100 650 40 20 0 AVCL = 1000 AVCL = 100 AVCL = 10 0 PHASE (DEGREES) GAIN (dB) 60 90 OPEN LOOP 1K 10K 180 100K 1M 10M GAIN BANDWIDTH PRODUCT (MHz) OPEN LOOP 80 600 550 500 100M 5 6 7 FIGURE 1. FREQUENCY RESPONSE FOR VARIOUS GAINS 9 10 11 12 13 14 15 FIGURE 2. GAIN BANDWIDTH PRODUCT vs SUPPLY VOLTAGE 750 90 80 650 70 550 CMRR (dB) GAIN BANDWIDTH PRODUCT (MHz) 8 SUPPLY VOLTAGE (±V) FREQUENCY (Hz) 450 60 50 40 350 30 250 -60 -40 -20 0 20 40 60 80 100 120 140 TEMPERATURE (oC) FIGURE 3. GAIN BANDWIDTH PRODUCT vs TEMPERATURE 4 20 100 1K 10K 100K FREQUENCY (Hz) FIGURE 4. CMRR vs FREQUENCY 1M 10M HA-2840 Typical Performance Curves TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ, CL < 10pF, Unless Otherwise Specified (Continued) 110 50 ±PSRR 80 PSRR (dB) NOISE VOLTAGE (nV/√Hz) 90 70 60 50 40 30 37.5 30 20 25 NOISE CURRENT NOISE VOLTAGE 10 12.5 20 NOISE CURRENT (pA/√Hz) 100 10 0 100 1K 10K 100K FREQUENCY (Hz) 1M 0 10 10M 100 1K 0 100K 10K FREQUENCY (Hz) FIGURE 5. PSRR vs FREQUENCY FIGURE 6. INPUT NOISE vs FREQUENCY 750 700 650 SLEW RATE (V/µs) SLEW RATE (V/µs) 700 650 600 600 550 500 550 -60 450 -40 -20 0 20 40 60 80 100 120 140 5 6 7 8 TEMPERATURE (oC) 9 10 11 12 13 14 15 14 15 SUPPLY VOLTAGE (±V) FIGURE 7. SLEW RATE vs TEMPERATURE FIGURE 8. SLEW RATE vs SUPPLY VOLTAGE 8.0 14 2.5 6.0 BIAS CURRENT OFFSET VOLTAGE 1.5 5.0 0.5 4.0 SUPPLY CURRENT (mA) 7.0 INPUT OFFSET VOLTAGE (mV) INPUT BIAS CURRENT (µA) 3.5 12 125oC -55oC 25oC 10 8 -0.5 3.0 -60 6 -40 -20 0 20 40 60 80 100 120 140 TEMPERATURE (oC) FIGURE 9. INPUT OFFSET VOLTAGE AND INPUT BIAS CURRENT vs TEMPERATURE 5 5 6 7 8 9 10 11 12 13 SUPPLY VOLTAGE (±V) FIGURE 10. SUPPLY CURRENT vs SUPPLY VOLTAGE HA-2840 Typical Performance Curves TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ, CL < 10pF, Unless Otherwise Specified (Continued) -2.5 ±8V, 75Ω ±8V, 150Ω 12.5 OUTPUT SWING (V) POSITIVE OUTPUT SWING (V) 15 ±15V, 1kΩ 10 ±15V, 150Ω 7.5 ±15V, 75Ω 5 -5 ±8V, 1kΩ ±15V, 75Ω -7.5 ±15V, 150Ω -10 2.5 ±8V, 1kΩ 0 -60 -40 -20 0 ±8V, 75Ω ±8V, 150Ω 20 40 60 80 100 ±15V, 1kΩ 120 -12.5 -60 140 -40 -20 TEMPERATURE (oC) 20 40 60 80 100 120 140 TEMPERATURE (oC) FIGURE 11. POSITIVE OUTPUT SWING vs TEMPERATURE FIGURE 12. NEGATIVE OUTPUT SWING vs TEMPERATURE -35 25 20 -45 VSUPPLY = ±15V 15 -55 THD (dBc) OUTPUT VOLTAGE SWING (VP-P) 0 10 VSUPPLY = ±8V 5 0 1K 10K 100K 1M 10M 100M -65 -75 VO = 10VP-P -85 VO = 2VP-P VO = 1VP-P VO = 0.5VP-P 100K 1M FREQUENCY (Hz) FREQUENCY (Hz) FIGURE 13. MAXIMUM UNDISTORTED OUTPUT SWING vs FREQUENCY FIGURE 14. TOTAL HARMONIC DISTORTION vs FREQUENCY THIRD INTERMOD PRODUCT (dBc) -35 VO = 0.5VP-P VO = 1VP-P -45 VO = 2VP-P -55 -65 VO = 5VP-P -75 VO = 0.25VP-P -85 -95 500K 1M 10M FREQUENCY (Hz) FIGURE 15. INTERMODULATION DISTORTION vs FREQUENCY (TWO TONE) 6 10M HA-2840 Die Characteristics DIE DIMENSIONS: SUBSTRATE POTENTIAL (Powered Up): 65 mils x 52 mils x 19 mils 1650µm x 1310µm x 483µm VTRANSISTOR COUNT: METALLIZATION: 34 Type: Aluminum, 1% Copper Thickness: 16kÅ ±2kÅ PROCESS: High Frequency Bipolar Dielectric Isolation PASSIVATION: Type: Nitride over Silox Silox Thickness: 12kÅ ±2kÅ Nitride thickness: 3.5kÅ ±1kÅ Metallization Mask Layout HA-2840 V+ OUT -IN +IN V- 7