HA-2539 Data Sheet September 1998 File Number 2896.3 600MHz, Very High Slew Rate Operational Amplifier Features The Intersil HA-2539 represents the ultimate in high slew rate, wideband, monolithic operational amplifiers. It has been designed and constructed with the Intersil High Frequency Bipolar Dielectric Isolation process and features dynamic parameters never before available from a truly differential device. • Open Loop Gain . . . . . . . . . . . . . . . . . . . . . . . . . . 15kV/V • Very High Slew Rate . . . . . . . . . . . . . . . . . . . . . . 600V/µs • Wide Gain-Bandwidth (AV ≥ 10) . . . . . . . . . . . . . . 600MHz • Power Bandwidth . . . . . . . . . . . . . . . . . . . . . . . . . 9.5MHz • Low Offset Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mV • Input Voltage Noise . . . . . . . . . . . . . . . . . . . . . . 6nV/√Hz With a 600V/µs slew rate and a 600MHz gain bandwidth product, the HA-2539 is ideally suited for use in video and RF amplifier designs, in closed loop gains of 10 or greater. Full ±10V swing coupled with outstanding AC parameters and complemented by high open loop gain makes the devices useful in high speed data acquisition systems. For further design assistance please refer to Application Note AN541 (Using the HA-2539 Very High Slew Rate Wideband Operational Amplifiers) and Application Note AN556 (Thermal Safe-Operating-Areas For High Current Operational Amplifiers. For military grade product information, the HA-2539/883 data sheet is available upon request. • Output Voltage Swing . . . . . . . . . . . . . . . . . . . . . . . . ±10V • Monolithic Bipolar Dielectric Construction Applications • Pulse and Video Amplifiers • Wideband Amplifiers • High Speed Sample-Hold Circuits • RF Oscillators Pinout HA-2539 (PDIP, CERDIP) TOP VIEW Ordering Information TEMP. RANGE (oC) PACKAGE HA1-2539-2 -55 to 125 14 Ld CERDIP F14.3 NC 2 HA1-2539-5 0 to 75 14 Ld CERDIP F14.3 V- 3 12 NC HA3-2539-5 0 to 75 14 Ld PDIP E14.3 NC 4 11 NC NC 5 10 +V NC 6 9 NC NC 7 8 OUTPUT PKG. NO. +IN 1 14 -IN + - PART NUMBER 13 NC NOTE: No-Connection (NC) leads may be tied to a ground plane for better isolation and heat dissipation. 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HA-2539 Absolute Maximum Ratings Thermal Information Supply Voltage Between V+ and V- Terminals. . . . . . . . . . . . . . 35V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Continuous Output Current . . . . . . . . . . . . . . . . . . . . . . . 33mARMS Thermal Resistance (Typical, Note 2) θJA (oC/W) θJC (oC/W) CERDIP Package. . . . . . . . . . . . . . . . . 75 20 PDIP Package . . . . . . . . . . . . . . . . . . . 107 N/A Maximum Internal Quiescent Power Dissipation (Note 1) Maximum Junction Temperature (Ceramic Package) . . . . . . .175oC Maximum Junction Temperature (Plastic Package) . . . . . . . . .150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC Operating Conditions Temperature Range HA-2539-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC HA-2539-5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 75oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Maximum power dissipation with load conditions must be designed to maintain the maximum junction temperature below 175oC for the ceramic package and below 150oC for the plastic package. By using Application Note AN556 on Safe Operating Area equations, along with the thermal resistances, proper load conditions can be determined. Heat sinking is recommended above 75oC. 2. θJA is measured with the component mounted on an evaluation PC board in free air. VSUPPLY = ±15V, RL = 1kΩ, CL < 10pF, Unless Otherwise Specified Electrical Specifications PARAMETER HA-2539-2 HA-2539-5 TEMP. (oC) MIN TYP MAX MIN TYP MAX UNITS 25 - 8 10 - 8 15 mV INPUT CHARACTERISTICS Offset Voltage Full - 13 15 - 13 20 mV Average Offset Voltage Drift Full - 20 - - 20 - µV/oC Bias Current 25 - 5 20 - 5 20 µA Full - - 25 - - 25 µA 25 - 1 6 - 1 6 µA Full - - 8 - - 8 µA Input Resistance 25 - 10 - - 10 - kΩ Input Capacitance 25 - 1 - - 1 - pF Offset Current Common Mode Range Full ±10.0 - - ±10.0 - - V Input Current Noise (f = 1kHz, RSOURCE = 0Ω) 25 - 6 - - 6 - pA/√Hz Input Voltage Noise (f = 1kHz, RSOURCE = 0Ω) 25 - 6 - - 6 - nV/√Hz 25 10 15 - 10 15 - kV/V Full 5 - - 5 - -- kV/V Common Mode Rejection Ratio (Note 4) Full 60 72 - 60 72 - dB Minimum Stable Gain 25 10 - - 10 - - V/V Gain Bandwidth (Notes 5, 6) 25 - 600 - - 600 - MHz Output Voltage Swing (Notes 3, 10) Full ±10.0 - - ±10.0 - - V Output Current (Note 3) 25 ±10 ±20 - ±10 ±20 - mA Output Resistance 25 - 30 - - 30 - Ω Full Power Bandwidth (Notes 3, 7) 25 8.7 9.5 - 8.7 9.5 - MHz TRANSFER CHARACTERISTICS Large Signal Voltage Gain (Note 3) OUTPUT CHARACTERISTICS 2 HA-2539 VSUPPLY = ±15V, RL = 1kΩ, CL < 10pF, Unless Otherwise Specified (Continued) Electrical Specifications HA-2539-2 TEMP. (oC) MIN Rise Time 25 Overshoot 25 Slew Rate Settling Time: 10V Step to 0.1% PARAMETER HA-2539-5 TYP MAX MIN TYP MAX UNITS - 7 - - 15 - - 7 - ns - 15 - % 25 550 600 - 550 600 - V/µs 25 - 180 - - 180 - ns TRANSIENT RESPONSE (Note 8) POWER REQUIREMENTS Supply Current Full - 20 25 - 20 25 mA Power Supply Rejection Ratio (Note 9) Full 60 70 - 60 70 - dB NOTES: 3. RL = 1kΩ, VO = ±10V. 4. VCM = ±10.0V. 5. VO = 90mV. 6. AV = 10. Slew Rate 7. Full Power Bandwidth guaranteed based on slew rate measurement using: FPBW = ----------------------------- . 2πV PEAK 8. Refer to Test Circuits section of data sheet. 9. VSUPPLY = +5V, -15V and +15V, -5V. 10. Guaranteed range for output voltage is ±10V. Functional operation outside of this range is not guaranteed. Test Circuits and Waveforms IN + OUT 900Ω NOTES: 100Ω 11. VS = ±15V. 12. AV = +10. 13. CL ≤ 10pF. FIGURE 1. TEST CIRCUIT A B Vertical Scale: A = 0.5V/Div., B = 5.0V/Div. Horizontal Scale: 50ns/Div. FIGURE 2. LARGE SIGNAL RESPONSE 3 Vertical Scale: Input = 10mV/Div., Output = 50mV/Div. Horizontal Scale: 20ns/Div. FIGURE 3. SMALL SIGNAL RESPONSE HA-2539 Test Circuits and Waveforms (Continued) 0.001µF V+ NOTES: 14. AV = -10. 15. Load Capacitance should be less than 10pF. 200Ω INPUT OUTPUT 1µF - 16. It is recommended that resistors be carbon composition and that feedback and summing network ratios be matched to 0.1%. + 0.001µF <10pF PROBE MONITOR 17. SETTLE POINT (Summing Node) capacitance should be less than 10pF. For optimum settling time results, it is recommended that the test circuit be constructed directly onto the device pins. A Tektronix 568 Sampling Oscilloscope with S-3A sampling heads is recommended as a settle point monitor. V- 500Ω 1µF 2kΩ SETTLE POINT 5kΩ FIGURE 4. SETTLING TIME CIRCUIT Schematic Diagram V+ R23 R1 R2 QP18 QP28 R4 R3 QP22 QP6 QP17 QP19 R24 R5 R13 QP5 VQP25 QN2 V- R22 C1 R QN1 QN7 R7 R6 QN9 +INPUT QP23 R8 QN21 QP8 R18 QN10 R19 R9 QP3 OUTPUT QP4 -INPUT QP11 V+ R21 Z1 QN12 QN25 V+ R25 QN20 DZ1 QN14 DZ2 R11 R10 QN15 R16 QN16 QN13 R12 QN29 R14 R15 R17 V- 4 HA-2539 Typical Applications SET AV = 1+ R1 =5 R2 R2 SET AV = -R2 R1 = -3 HA-2539 + R1 - 20 - 100pF - R1 ZIN 20Ω R2 + FIGURE 5. FREQUENCY COMPENSATION BY OVERDAMPING R5 1kΩ R4 10kΩ INPUT C2 R1 FIGURE 6. STABILIZATION USING ZIN 10kΩ 3900pF 0.039µF R2 1kΩ HA-2539 C1 - - + + R3 HA-5170 OUTPUT 1kΩ FIGURE 7. REDUCING DC ERRORS; COMPOSITE AMPLIFIER FIGURE 8. DIFFERENTIAL GAIN ERROR (3%) HA-2539 20dB VIDEO GAIN BLOCK Typical Performance Curves 7 12 6 VS = ±15V 5 OFFSET VOLTAGE 8 4 6 3 BIAS CURRENT 4 2 2 1 0 0 -80 -40 0 40 80 120 160 TEMPERATURE (oC) FIGURE 9. INPUT OFFSET VOLTAGE AND BIAS CURRENT vs TEMPERATURE 5 NOISE VOLTAGE (nV/√Hz) 10 |VIO| OFFSET VOLTAGE (mV) INPUT BIAS CURRENT (µA) RSOURCE = 0Ω 25 50 20 40 15 30 10 20 5 VOLTAGE NOISE 10 CURRENT NOISE 0 10 100 NOISE CURRENT (pA/√Hz) 14 1K FREQUENCY (Hz) 10K 0 100K FIGURE 10. INPUT NOISE VOLTAGE AND NOISE CURRENT vs FREQUENCY HA-2539 Typical Performance Curves (Continued) +40µV +30µV 100 +20µV +10µV CMRR (dB) 80 0µV -10µV 60 40 -20µV -30µV 20 -40µV 0 Vertical Scale: 10mV/Div. Horizontal Scale: 50ms/Div. 1K FIGURE 11. BROADBAND NOISE (0.1Hz TO 1MHz) 10K 100K FREQUENCY (Hz) 1M 10M FIGURE 12. COMMON MODE REJECTION RATIO vs FREQUENCY 80 80 60 0 GAIN PHASE 45 40 90 40 20 135 20 0 180 60 0 1K 10K 100K FREQUENCY (Hz) 1M -20 100 10M FIGURE 13. POWER SUPPLY REJECTION RATIO vs FREQUENCY PHASE (DEGREES) 100 GAIN (dB) PSRR (dB) 100 225 1K 10K 100K 1M 10M FREQUENCY (Hz) 100M FIGURE 14. OPEN LOOP GAIN/PHASE vs FREQUENCY 28 VS = ±15V VS = ±15V 100 24 OUTPUT VOLTAGE (VP-P) CLOSED LOOP GAIN (dB) 90 80 70 60 50 40 30 20 10 20 VS = ±10V 16 12 8 VS = ±5V 4 0 -10 100 1K 10K 100K 1M 10M 100M FREQUENCY (Hz) FIGURE 15. CLOSED LOOP FREQUENCY RESPONSE 6 0 1K 10K 100K 1M 10M 100M FREQUENCY (Hz) FIGURE 16. OUTPUT VOLTAGE SWING vs FREQUENCY HA-2539 Typical Performance Curves (Continued) 1.4 NORMALIZED PARAMETERS REFERRED TO VALUES AT 25oC OUTPUT VOLTAGE SWING (VP-P) 28 24 20 16 12 8 4 0 0 200 400 600 800 RESISTANCE (Ω) 1K 1.3 BANDWIDTH 1.2 1.1 SLEW RATE 1.0 0.9 0.8 0.7 0.6 -80 1.2K -40 0 40 80 120 160 TEMPERATURE (oC) FIGURE 17. OUTPUT VOLTAGE SWING vs LOAD RESISTANCE FIGURE 18. NORMALIZED AC PARAMETERS vs TEMPERATURE 28 VS = ±15V 24 8 10mV 6 SUPPLY CURRENT (mA) OUTPUT VOLTAGE STEP (V) 10 1mV 4 2 0 -2 10mV -4 -6 1mV -8 -10 20 16 VS = ±5V 12 8 4 0 40 80 120 160 SETTLING TIME (ns) 200 240 FIGURE 19. SETTLING TIME FOR VARIOUS OUTPUT STEP VOLTAGES 7 0 -80 -40 0 40 80 120 160 TEMPERATURE (oC) FIGURE 20. POWER SUPPLY CURRENT vs TEMPERATURE HA-2539 Die Characteristics DIE DIMENSIONS: SUBSTRATE POTENTIAL (Powered Up): 62 mils x 76 mils x 19 mils 1575µm x 1930µm x 483µm VTRANSISTOR COUNT: METALLIZATION: 30 Type: Al, 1% Cu Thickness: 16kÅ ±2kÅ PROCESS: Bipolar Dielectric Isolation PASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.) Silox Thickness: 12kÅ ±2kÅ Nitride Thickness: 3.5kÅ ±1.5kÅ Metallization Mask Layout HA-2539 V+ -IN OUTPUT V- +IN All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. 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