HITACHI 2SC4796

2SC4796
Silicon NPN Triple Diffused
Application
TO–3PFM
TV / character display horizontal deflection output
Features
• High speed switching
tf ≤ 0.6 µs
• High breakdown voltage
VCBO = 1700 V
• Isolated package
TO–3PFM
1
1. Base
2. Collector
3. Emitter
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
———————————————————————————————————————————
Collector to base voltage
VCBO
1700
V
———————————————————————————————————————————
Collector to emitter voltage
VCEO
900
V
———————————————————————————————————————————
Emitter to base voltage
VEBO
6
V
———————————————————————————————————————————
Collector current
IC
6
A
———————————————————————————————————————————
Collector surge current
ic(surge)
16
A
———————————————————————————————————————————
Collector power dissipation
PC*1
50
W
———————————————————————————————————————————
Junction temperature
Tj
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
Note: 1. Value at TC = 25°C.
2SC4796
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
———————————————————————————————————————————
Collector to emitter breakdown V(BR)CEO
voltage
900
—
—
V
IC = 10 mA, RBE = ∞
———————————————————————————————————————————
Emitter to base breakdown
voltage
V(BR)EBO
6
—
—
V
IE = 10 mA, IC = 0
———————————————————————————————————————————
Collector cutoff current
ICES
—
—
500
µA
VCE = 1700 V, RBE = 0
———————————————————————————————————————————
DC current transfer ratio
hFE
—
—
35
VCE = 5 V, IC = 1A
———————————————————————————————————————————
Collector to emitter saturation VCE(sat)
voltage
—
—
5
V
IC = 5 A, IB = 1 A
———————————————————————————————————————————
Base to emitter saturation
voltage
VBE(sat)
—
—
1.5
V
IC = 5 A, IB = 1 A
———————————————————————————————————————————
Fall time
tf
—
—
0.6
µs
ICP = 5 A, IB1 = 1 A
IB2 = –2 A, fH = 31.5 kHz
———————————————————————————————————————————
Maximum Safe Operation Area
80
I C (A)
20
60
Collector Current
Collector Power Dissipation
Pc (W)
Maximum Collector Power Dissipation Curve
40
20
(100 V, 16 A)
16
f = 15.75 kHz
Ta = 25 °C
For picture tube arcing
12
8
4
(900 V, 3 A)
0.5 mA
0
50
100
Case Temperature
150
Tc (°C)
200
0
800
1200 1600 2000
400
Collector to Emitter Voltage V CE (V)
2SC4796
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
3
A
0.8 A
100
0.7 A A
0.6
0.5 A
0.4 A
0.3 A
h FE
0.9
DC Current Transfer Ratio
I C (A)
4
Collector Current
1
A
5
0.2 A
2
0.1 A
1
Tc = 25 °C
0
IB = 0
2
4
10
6
8
Collector to Emitter Voltage V CE (V)
25 °C
–25 °C
5
2
1
3
I C (A)
6
5
Base to Emitter Saturation Voltage
V BE(sat) (V)
Collector to Emitter Saturation Voltage
V CE(sat) (V)
10
Tc = 75 °C
Base to Emitter Saturation Voltage
vs. Collector Current
5
IC / I B = 5
2
1
0.2
20
1
10 m 30 m 0.1
0.3
Collector Current
Collector to Emitter Saturation Voltage
vs. Collector Current
0.5
VCE = 5 V
50
Tc = –25 °C
25 °C
75 °C
0.1
0.05
10 m 30 m 0.1
0.3
Collector Current
1
I C (A)
3
6
IC / I B = 5
2
Tc = –25 °C
25 °C
1
0.5
75 °C
0.2
0.1
0.3
10 m 30 m 0.1
Collector Current
1
3
I C (A)
6
2SC4796
Collector to Emitter Saturation Voltage
V CE(sat) (V)
Collector to Emitter Saturation Voltage
vs. Base Current
10
Tc = 25 °C
IC = 2 A
4A
6A
5
0
0.1
0.2
0.5
1
Base Current I B
2
(A)
5