2SC5120 Silicon NPN Epitaxial Application TO–126FM High frequency amplifier Features • Excellent high frequency characteristics fT = 500 MHz typ • High voltage and low output capacitance VCEO = 150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier 12 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Collector to base voltage VCBO 150 V ——————————————————————————————————————————— Collector to emitter voltage VCEO 150 V ——————————————————————————————————————————— Emitter to base voltage VEBO 3 V ——————————————————————————————————————————— Collector current IC 0.2 A ——————————————————————————————————————————— Collector peak current ic(peak) 0.4 A ——————————————————————————————————————————— Collector power dissipation PC 1.4 W ————— 8*1 ——————————————————————————————————————————— Junction temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— Note: 1. Tc = 25°C 2SC5120 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO 150 — — V IC = 10 µA, IE = 0 ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO 150 — — V IC = 1 mA, RBE = ∞ ——————————————————————————————————————————— Collector cutoff current ICBO — — 10 µA VCB = 100 V, IE = 0 ——————————————————————————————————————————— Emitter cutoff current IEBO — — 10 µA VEB = 3 V, IC = 0 ——————————————————————————————————————————— DC current transfer ratio hFE 50 — 150 — VCE = 10 V, IC = 10 mA ——————————————————————————————————————————— Collector to emitter saturation voltage VCE(sat) — — 1.0 V IC = 50 mA IB = 5 mA ——————————————————————————————————————————— Gain bandwidth product fT 400 500 — MHz VCE = 20 V IC = 50 mA ——————————————————————————————————————————— Collector output capacitance Cob — 5.0 6.0 pF VCB = 30 V, IE = 0 f=1MHz ——————————————————————————————————————————— 2SC5120 Maximum Collector Dissipation Curve Area of Safe Operation 6 Collector Current Ta 0 D C 0.1 ) 0.02 Tc = 25 °C 0 IB= 0 5 10 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio h FE I C (A) Collector Current 2 mA 0.1 DC Current Transfer Ratio vs. Collector Current 1000 mA A 14 12 m mA 10 mA 8 A 6m A 4m pe (T rat c ion = 25 °C 0.05 Typical Output Characteristics 0.2 O 0.01 10 20 50 100 200 500 Collector to Emitter Voltage VCE (V) 50 100 150 200 Case Temperature Tc (°C) Ambient Temperature Ta (°C) 20 mA 18 mA 16 mA ms 1.4W I C max =1 2 0.2 ms Tc 4 1 shot pulse (Ta = 25 °C) 0.5 ic(peak) PW I C (mA) 1.0 10 Collector Power Dissipation Pc (W) 8 500 Tc = 75°C 200 25°C 100 50 –25°C 20 VCE = 10 V 10 1 2 5 10 20 50 100 200 Collector Current I C (mA) 2SC5120 Collector to Emitter Saturation Voltage vs. Collector Current Base to Emitter Saturation Voltage vs. Collector Current 10 500 200 –25°C Tc = 75°C 100 50 25°C 20 5 I C / I B = 10 2 1 –25°C 25°C 0.5 Tc = 75°C 0.2 10 0.1 1 2 5 10 20 50 100 200 Collector Current I C (mA) Gain Bandwidth Product vs. Collector Current 1000 Gain Babdwidth Product f T (MHz) Base to Emitter Saturation Voltage V BE(sat) (V) I C/ I B = 10 500 200 100 50 V CE = 20 V Tc = 25 °C 20 10 1 2 5 10 20 50 100 200 Collector Current I C (mA) 1 Collector Output Capacitance Cob (pF) Collector to Emitter Saturation Voltage V CE(sat) (mV) 1000 2 5 10 20 50 100 200 Collector Current I C (mA) Collector Output Capacitance vs. Collector to Base Voltage 20 10 5 IE = 0 f = 1 MHz 2 1 1 2 5 10 20 50 100 Collector to Base Voltage V CB (V) 2SC5120 φ 3.2 +0.15 –0.1 8.0 ± 0.4 6.0 3.2 ± 0.4 1.9 Max 11.0 ± 0.5 3.5 1.0 Package Outline 15.6 ± 0.5 1.7 0.65 2.29 ± 0.5 0.7 2.29 ± 0.5 Hitachi Code TO–126FM — EIAJ — JEDEC