HITACHI HA13155

HA13155
33 W × 4-Channel BTL Power IC
ADE-207-187A (Z)
2nd Edition
Jul. 1999
Description
The HA13155 is four-channel BTL amplifier IC designed for car audio, featuring high output and low
distortion, and applicable to digital audio equipment. It provides 33 W output per channel, with a 13.7 V
power supply and at Max distortion.
Functions
•
•
•
•
4 ch BTL power amplifiers
Built-in standby circuit
Built-in muting circuit
Built-in protection circuit (surge, T.S.D, and ASO)
Features
•
•
•
•
•
Requires few external parts
Popping noise minimized
Low output noise
Built-in high reliability protection circuit
Pin to pin with HA13150A/HA13151/HA13152/HA13153
HA13155
Block Diagram
C11
0.1 µ/16 V
VCC
13.2 V
C9
4400 µ/16 V
14
STBY
2
IN VCC
18
6
PVCC2
PVCC1
3
R1
2.2
IN-1
4
Amp-1
Buffer & Mute-1
1
C1
0.1 µ
5
7
R3
2.2
IN-2
11
R2 C2
2.2 0.1 µ
8
Amp-2
Buffer & Mute-2
C3
0.1 µ
9
15
R5
2.2
IN-3
Amp-3
Buffer & Mute-3
13
R4 C4
2.2 0.1 µ
16
C5
0.1 µ
17
19
R7
2.2
IN-4
23
R9
7.5 k
Amp-4
Buffer & Mute-4
MUTE
10
R6 C6
2.2 0.1 µ
20
21
Protector
(ASO, Surge, TSD)
12
C7
0.1 µ
22
TAB
C10
10 µ/10 V
R8 C8
2.2 0.1 µ
Unit
C1 to C8 should be polyester film capacitors with no secondary resonance (non-inductive),
to assure stable operation.
Notes: 1. Standby
Power is turned on when a signal of
3.5 V or 0.05 mA is impressed at pin 2.
When pin 2 is open or connected to
GND, standby is turned on (output off).
2. Muting
Muting is turned off (output on) when
a signal of 3.5 V or 0.2 mA is impressed
at pin 10.
When pin 10 is open or connected to
GND, muting is turned on (output off).
3. TAB (header of IC) connected to GND.
2
5V
2
23.5 k
Q1 ON
↓
BIAS ON
25 k
Q2 ON
↓
MUTE ON
37.5 k
5V
10
R: Ω
C: F
HA13155
Absolute Maximum Ratings
Item
Symbol
Rating
Unit
VCC
18
V
VCC (DC)
26
V
VCC (PEAK)
50
V
I O (PEAK)
4
A
Power dissipation*
PT
83
W
Junction temperature
Tj
150
°C
Operating temperature
Topr
–30 to +85
°C
Storage temperature
Tstg
–55 to +125
°C
Operating supply voltage
1
Supply voltage when no signal*
2
Peak supply voltage*
3
Output current*
4
Notes: 1.
2.
3.
4.
Tolerance within 30 seconds.
Tolerance in surge pulse waveform.
Value per 1 channel.
Value when attached on the infinite heat sink plate at Ta = 25 °C.
The derating carve is as shown in the graph below.
100
A: When heat sink is infinite (θj-a = 1.5°C/W)
B: When θf (thermal resistance of heat sink) = 3°C/W
(θj-a = 4.5°C/W)
Power dissipation PT (W)
83 W
A
50
28 W
B
0
25
50
85
Ambient temperature Ta
100
150
(°C)
3
HA13155
Electrical Characteristics (VCC = 13.2 V, f = 1 kHz, RL = 4 Ω, Rg = 600 Ω, Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Quiescent current
I Q1
—
300
—
mA
Vin = 0
Output offset voltage
∆VQ
–250
0
+250
mV
Gain
GV
30.5
32
33.5
dB
Gain difference between
channels
∆GV
–1.0
0
+1.0
dB
Rated output power
Po
—
19
—
W
VCC = 13.2 V
THD = 10%, RL = 4 Ω
Max output power
Pomax
—
33
—
W
VCC = 13.7 V, RL = 4 Ω
Total harmonic distortion
T.H.D.
—
0.02
—
%
Po = 3 W
Output noise voltage
WBN
—
0.15
—
mVrms
Rg = 0 Ω
BW = 20 to 20 kHz
Ripple rejection
SVR
—
55
—
dB
Rg = 600 Ω, f = 120 Hz
Channel cross talk
C.T.
—
70
—
dB
Rg = 600 Ω
Vout = 0 dBm
Input impedance
Rin
—
25
—
kΩ
Standby current
I Q2
—
—
10
µA
Standby control voltage
(high)
VSTH
3.5
—
VCC
V
Standby control voltage
(low)
VSTL
0
—
1.5
V
Muting control voltage
(high)
VMH
3.5
—
VCC
V
Muting control voltage
(low)
VML
0
—
1.5
V
Muting attenuation
ATTM
—
70
—
dB
4
Vout = 0 dBm
HA13155
Characteristics Curve
Quiescent current vs. Supply Voltage
Quiescent current IQ (mA)
400
300
200
100
0
0
8
10
12
14
16
18
20
Supply Voltage VCC (V)
Output Power vs. Supply Voltage
70
RL = 4 Ω, f = 1 kHz
m
ax
50
Po
Output Power Po, Pomax (W)
60
40
30
D
(TH
0
=1
%)
Po
20
10
0
0
8
10
12
14
16
18
20
Supply Voltage VCC (V)
5
HA13155
Total Harmonic Distortion vs. Frequency
Total Harmonic Distortion THD (%)
5
VCC = 13.2 V, RL = 4 Ω
2
1
0.5
0.2
0.1
0.05
Po = 8.0 W (Ch1–Ch4)
0.02
Po = 1.5 W (Ch1–Ch4)
0.01
20
50
100 200
500
1k
2k
5k
10k 20k
Frequency f (Hz)
Total Harmonic Distortion vs. Output Power
Total Harmonic Distortion THD (%)
5
VCC = 13.2 V, RL = 4 Ω, f = 1 kHz
2
1
0.5
10 kHz (Ch1–C
h4)
0.2
0.1
0.05
1 kHz
100
0.02
0.01
0.01 0.02
Hz
0.05 0.1 0.2
(Ch1–
Ch4)
(Ch
1–C
0.5
h4)
1
2
Output Power Po (W)
6
5
10
20
HA13155
Crosstalk vs. Frequency (1)
80
Input Ch1, VCC = 13.2 V, Vout = 0 dBm
70
Crosstalk CT (dB)
60
50
Ch2
Ch3
Ch4
40
30
20
10
0
20
50
100 200
500
1k
2k
5k
10k 20k
5k
10k 20k
Frequency f (Hz)
Crosstalk vs. Frequency (2)
80
Input Ch2, VCC = 13.2 V, Vout = 0 dBm
70
Crosstalk CT (dB)
60
50
Ch1
Ch3
Ch4
40
30
20
10
0
20
50
100 200
500
1k
2k
Frequency f (Hz)
7
HA13155
Crosstalk vs. Frequency (3)
80
Input Ch3, VCC = 13.2 V, Vout = 0 dBm
70
Crosstalk CT (dB)
60
50
Ch1
Ch2
Ch4
40
30
20
10
0
20
50
100 200
500
1k
2k
5k
10k 20k
5k
10k 20k
Frequency f (Hz)
Crosstalk vs. Frequency (4)
80
Input Ch4, VCC = 13.2 V, Vout = 0 dBm
70
Crosstalk CT (dB)
60
50
Ch1
Ch2
Ch3
40
30
20
10
0
20
50
100 200
500
1k
2k
Frequency f (Hz)
8
HA13155
Supply Voltage Rejection Ratio vs. Frequency
Supply Voltage Rejection Ratio SVR (dB)
80
VCC = 13.2 V, RL = 4 Ω, Vripple = 0 dBm, Rg = 620 Ω
70
60
50
40
30
Ch1
Ch2
Ch3
Ch4
20
10
0
20
50
100 200
500
1k
2k
5k
10k 20k
50k
Frequency f (Hz)
Wide Band Noise vs. Signal Source Resistance
5
VCC = 13.2 V, RL = 4 Ω, Vik = 0
Wide Band Noise WBN (mV)
2
1
0.5
Mute OFF Ch1–Ch4
0.2
0.1
Mute ON Ch1–Ch4
0.05
0.02
0.01
20
50
100 200
500
1k
2k
5k
10k 20k
50k
Signal Source Resistance Rg (Ω)
9
HA13155
Power Dissipation vs. Output Power
50
RL = 4 Ω, f = 1 kHz, 1ch operation
Power Dissipation PT (W)
20
4)
1–Ch
V CC =
10
5
V CC
(Ch
16 V
V
= 13.2
Ch4)
(Ch1–
2
1
0.5
0.2
0.1
0.01 0.02
0.05 0.1 0.2
0.5
1
2
5
10
20
Output Power Po (W)
Power Dissipation vs. Frequency
Power Dissipation PT (W)
15
VCC = 13.2 V, RL = 4 Ω, Po = 10 W, 1ch operation
Ch1–Ch4
10
5
0
20
50
100 200
500
1k
2k
Frequency f (Hz)
10
5k
10k 20k
HA13155
Gain vs. Frequency
40
VCC = 13.2 V, RL = 4 Ω, VOUT = 0 dBm
35
Ch1–Ch4
Gain GV (dB)
30
25
20
15
10
5
0
20
50 100 200 500 1k 2k
5k 10k 20k 50k 100k200k 500k 1M
Frequency f (Hz)
11
HA13155
Package Dimensions
Unit: mm
30.18 ± 0.25
2.79
0.05
1.55 +– 0.1
2 – R1.84 ± 0.19
23
0.70 +0.09
–0.1
0.25 M
27.94
1.27
0.06
0.40 +– 0.04
5.08 4.29
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
12
4.14 ± 0.33
1
17.78 ± 0.25
10.70 ± 0.12
3.80 ± 0.05
17.50 ± 0.13
4.32 ± 0.05
1.12
4.50 ± 0.12
φ 3.80 ± 0.05
19.81
SP-23TE
Conforms
—
8.5 g
HA13155
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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For further information write to:
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Copyright ' Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
13