TB2913HQ(o) TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic TB2913HQ Maximum Power 47 W BTL × 4-ch Audio Power IC The TB2913HQ is 4-ch BTL audio amplifier for car audio applications. This IC can generate higher power: POUT MAX = 47 W as it includes the pure complementary P-ch and N-ch DMOS output stage. It is designed to yield low distortion ratio for 4-ch BTL audio power amplifier, built-in standby function, muting function, and various kinds of protectors. Additionally, Clip detector is built in. Features • High power output : POUT MAX (1) = 47 W (typ.) Weight: 7.7 g (typ.) (VCC = 14.4 V, f = 1 kHz, JEITA max, RL = 4 Ω) : POUT MAX (2) = 43 W (typ.) (VCC = 13.7 V, f = 1 kHz, JEITA max, RL = 4 Ω) : POUT (1) = 29 W (typ.) (VCC = 14.4 V, f = 1 kHz, THD = 10%, RL = 4 Ω) : POUT (2) = 25 W (typ.) (VCC = 13.2 V, f = 1 kHz, THD = 10%, RL = 4 Ω) • Low distortion ratio: THD = 0.015% (typ.) • Low noise: VNO = 90 µVrms (typ.) • Built-in standby switch function (pin 4) • Built-in muting function (pin 22) • Built-in Clip-detection function (pin 25) • Built-in various protection circuits: • Operating supply voltage: VCC (opr) = 9~18 V (RL = 4 Ω) (VCC = 13.2 V, f = 1 kHz, POUT = 5 W, RL = 4 Ω) (VCC = 13.2 V, Rg = 0 Ω, BW = 20 Hz~20 kHz, RL = 4 Ω) Thermal shut down, overvoltage, out to GND, out to VCC, out to out short Note 1: Since this device’s pins have a low withstanding voltage, please handle it with care. Note 2: Install the product correctly. Otherwise, it may result in break down, damage and/or degradation to the product or equipment. Note 3: These protection functions are intended to avoid some output short circuits or other abnormal conditions temporarily. These protect functions do not warrant to prevent the IC from being damaged. - In case of the product would be operated with exceeded guaranteed operating ranges, these protection features may not operate and some output short circuits may result in the IC being damaged 1 2004-03-01 TB2913HQ(o) 20 VCC1 6 VCC2 OUT1 (+) C1 11 PW-GND1 8 OUT2 (+) 12 RL 3 15 14 17 IN3 PW-GND3 18 OUT4 (+) RL 19 21 IN4 PW-GND4 24 OUT4 (−) PRE-GND 5 16 AC-GND OUT3 (−) C1 7 PW-GND2 2 OUT3 (+) C1 RL IN2 OUT2 (−) C6 9 IN1 OUT1 (−) C1 C3 1 TAB C5 Block Diagram RL 23 13 RIP STBY 10 4 Clip DET 25 MUTE 5V 22 C4 C2 PLAY R1 MUTE : PRE-GND : PW-GND Note: Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for explanatory purpose 2 2004-03-01 TB2913HQ(o) Caution and Application Method (Description is made only on the single channel.) 1. Voltage Gain Adjustment This IC has no NF (negative feedback) Pins. Therefore, the voltage gain can not be adjusted, but it makes the device a space and total costs saver. Amp. 2A Amp. 1 Input Amp. 2B Figure 1 Block Diagram The voltage gain of amp.1 : GV1 = 0dB The voltage gain of amp.2A, B : GV2 = 20dB The voltage gain of BTL connection : GV (BTL) = 6dB Therefore, the total voltage gain is decided by expression below. GV = GV1 + GV2 + GV (BTL) = 0 + 20 + 6 = 26dB 2. Standby SW Function (pin 4) By means of controlling pin 4 (standby pin) to High and Low, the power supply can be set to ON and OFF. The threshold voltage of pin 4 is set at about 3VBE (typ.), and the power supply current is about 2 µA (typ.) in the standby state. VCC ON Power OFF Control Voltage of Pin 4: VSB Standby Power ON OFF 0~1.5 OFF ON 3.5~6 V 4 10 kΩ ≈ 2 VBE to BIAS CUTTING CIRCUIT VSB (V) When changing the time constant of pin 4, check the pop noise. Figure 2 With pin 4 set to High, Power is turned ON Advantage of Standby SW (1) (2) Since VCC can directly be controlled to ON or OFF by the microcomputer, the switching relay can be omitted. Since the control current is microscopic, the switching relay of small current capacity is satisfactory for switching. 3 2004-03-01 TB2913HQ(o) Relay Large current capacity switch Battery Battery VCC From microcomputer VCC – Conventional Method – Small current capacity switch Battery From microcomputer Battery Stand-By VCC Stand-By VCC – Standby Switch Method – Figure 3 3. Muting Function (pin 22) Audio muting function is enabled when pin 22 is Low. When the time constant of the muting function is determined by R1 and C4, it should take into account the pop noise. The pop noise, which is generated when the power or muting function is turned ON/OFF, will vary according to the time constant. (Refer to Figure 4 and Figure 5.) The pin 22 is designed to operate off 5 V so that the outside pull-up resistor R1 is determined on the basic of this value: ex) When control voltage is changed in to 6 V from 5 V. 6 V/5 V × 47 k = 56 k Additionally, as the VCC is rapidly falling, the IC internal low voltage muting operates to eliminate the large pop noise basically. The low voltage muting circuit pull 200uA current into the IC so that the effect of the internal low voltage muting does not become enough if the R1 is too small value. To obtain enough operation of the internal low voltage muting, a series resistor, R1 at pin 22 should be 47 kΩ or more. ATT – VMUTE Mute attenuation ATT (dB) 20 5V R1 22 C4 1 kΩ Mute ON/OFF control VCC = 13.2 V f = 1kHz 0 RL = 4 Ω VOUT = 20dBm −20 −40 −60 −80 −100 −120 0 0.5 1 1.5 2 Pin 22 control voltage: VMUTE 2.5 3 (V) Figure 5 Mute Attenuation − VMUTE (V) Figure 4 Muting Function 4 2004-03-01 TB2913HQ(o) 4. Output Clip Detection Function (pin 25) The output clip detection terminal of pin 25 has the open collector output structure on chip as shown in Figure 6. In case that the output waveform is clipping, the clip detection circuit is operated and NPN Tr. is turned on. It is possible to improve the audio quality with controlling the volume, tone control circuit through L.P.F. smoothing circuit as shown in Figure 7. In case of being unused this function, use this IC as open connection on pin 25. (Application) 5V 25 OUTPUT CLIP DETECTOR VOLUME CONTROL CIRCUIT L.P.F. SMOOTHING CIRCUIT TONE CONTROL CIRCUIT pin 25: Open collector output (active low) Figure 6 (A) Output (AC wave form) AC (A) t (B) Clip Detector Circuit (internal) DC (B) t (B) Clip Detector Terminal (pin 25) DC (C) 5V t GND Figure 7 Clip Detection 5 2004-03-01 TB2913HQ(o) 5. Pop Noise Suppression Since the AC-GND pin (pin 16) is used as the NF pin for all amps, the ratio between the input capacitance (C1) and the AC-to-GND capacitance (C6) should be 1:4. Also, if the power is turned OFF before the C1 and C6 batteries have been completely charged, pop noise will be generated because of the DC input unbalance. To counteract the noise, it is recommended that a longer charging time be used for C2 as well as for C1 and C6. Note that the time which audio output takes to start will be longer, since the C2 makes the muting time (the time from when the power is turned ON to when audio output starts) is fix. The pop noise which is generated when the muting function is turned ON/OFF will vary according to the time constant of C4. The greater the capacitance, the lower the pop noise. Note that the time from when the mute control signal is applied to C4 to when the muting function is turned ON/OFF will be longer. 6. External Component Constants Component Recommended Name Value Effect Purpose Lower than recommended value Higher than recommended value C1 0.22 µF To eliminate DC Cut-off frequency is increased Cut-off frequency is reduced C2 10 µF To reduce ripple Powering ON/OFF is faster Powering ON/OFF takes longer C3 0.1 µF To provide sufficient oscillation margin Reduces noise and provides sufficient oscillation margin C4 1 µF To reduce pop noise High pop noise. Duration until Low pop noise. Duration until muting function is turned muting function is turned ON/OFF is short ON/OFF is long C5 3900 µF Ripple filter Power supply ripple filtering C6 1 µF NF for all outputs Pop noise is suppressed when C1:C6 = 1:4 Note: Notes Pop noise is generated when VCC is ON Pop noise is generated when VCC is ON If recommended value is not used. 6 2004-03-01 TB2913HQ(o) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VCC (surge) 50 V DC supply voltage VCC (DC) 28 V Operation supply voltage VCC (opr) 18 V Output current (peak) IO (peak) 9 A 125 W Peak supply voltage (0.2 s) Power dissipation PD (Note 2) Operation temperature Topr −40~85 °C Storage temperature Tstg −55~150 °C Note 2: Package thermal resistance θj-T = 1°C/W (typ.) (Ta = 25°C, with infinite heat sink) The absolute maximum ratings of a semiconductor device are a set of specified parameter values, which must not be exceeded during operation, even for an instant .If any of these rating would be exceeded during operation, the device electrical characteristics may be irreparably altered and the reliability and lifetime of the device can no longer be guaranteed. Moreover, these operations with exceeded ratings may cause break down, damage and/or degradation to any other equipment. Applications using the device should be designed such that each maximum rating will never be exceeded in any operating conditions, Before using, creating and/or producing designs, refer to and comply with the precautions and conditions set forth in this documents Electrical Characteristics (unless otherwise specified, VCC = 13.2 V, f = 1 kHz, RL = 4 Ω, Ta = 25°C) Characteristics Quiescent current Output power Total harmonic distortion Voltage gain Symbol Test Circuit Test Condition Min Typ. Max Unit mA ICCQ ⎯ VIN = 0 ⎯ 200 400 POUT MAX (1) ⎯ VCC = 14.4 V, max POWER ⎯ 47 ⎯ POUT MAX (2) ⎯ VCC = 13.7 V, max POWER ⎯ 43 ⎯ POUT (1) ⎯ VCC = 14.4 V, THD = 10% ⎯ 29 ⎯ W POUT (2) ⎯ THD = 10% 23 25 ⎯ THD ⎯ POUT = 5 W ⎯ 0.015 0.15 % GV ⎯ VOUT = 0.775 Vrms 24 26 28 dB dB ∆GV ⎯ VOUT = 0.775 Vrms −1.0 0 1.0 VNO (1) ⎯ Rg = 0 Ω, DIN45405 ⎯ 100 ⎯ VNO (2) ⎯ Rg = 0 Ω, BW = 20 Hz~20 kHz ⎯ 90 200 Ripple rejection ratio R.R. ⎯ frip = 100 Hz, Rg = 620 Ω Vrip = 0.775 Vrms 50 60 ⎯ dB Cross talk C.T. ⎯ Rg = 620 Ω VOUT = 0.775 Vrms ⎯ 70 ⎯ dB VOFFSET ⎯ ⎯ −150 0 150 mV RIN ⎯ ⎯ ⎯ 90 ⎯ kΩ µA Voltage gain ratio Output noise voltage Output offset voltage Input resistance Standby current Standby control voltage Mute control voltage Mute attenuation ISB ⎯ Standby condition ⎯ 2 10 VSB H ⎯ POWER: ON 3.5 ⎯ 6.0 VSB L ⎯ POWER: OFF 0 ⎯ 1.5 VM H ⎯ MUTE: OFF 3.0 ⎯ 6.0 VM L ⎯ MUTE: ON, R1 = 47 kΩ 0 ⎯ 0.5 ATT M ⎯ MUTE: ON VOUT = 7.75 Vrms→Mute: OFF 80 90 ⎯ 7 µVrms V V dB 2004-03-01 TB2913HQ(o) 6 VCC2 OUT1 (+) 0.22 µF C1 11 PW-GND1 8 OUT2 (+) C1 12 9 IN1 OUT1 (−) 0.22 µF C3 0.1 µF 20 VCC1 3900 µF 1 TAB C5 Test Circuit RL 7 5 IN2 PW-GND2 2 OUT2 (−) RL 3 1 µF C6 16 AC-GND OUT3 (+) 0.1µF 0.22 C1 15 PW-GND3 18 OUT3 (−) OUT4 (+) 0.22 µF C1 14 RL 19 21 IN4 PW-GND4 24 OUT4 (−) RL 23 13 10 4 Clip DET 25 MUTE 5V C4 22 1 µF STBY 10 µF RIP C2 PRE-GND 17 IN3 47 kΩ R1 PLAY MUTE : PRE-GND : PW-GND Components in the test circuits are only used to obtain and confirm the device characteristics. These components and circuits do not warrant to prevent the application equipment from malfunction or failure. 8 2004-03-01 TB2913HQ(o) THD – POUT (ch1) THD – POUT (ch2) 100 50 100 V = 13.2 V VCC CC = 13.2 V 50 RL = 4 Ω RL = 4 Ω 測定 ch のみ入力 30 Filter VCC = 13.2 V RL = 4 Ω 30 Filter Filter 100 Hz : ~30 kHz 100 Hz :: ~300 kHz kHz 1kHz 400 Hz~30 10 1kHz 10 kHz :: 400 400 Hz~30 Hz~ kHz 100 Hz : ~30 kHz 1kHz 10 : 400 Hz~30 kHz 10 kHz : 400 Hz~ 20 kHz : 400 Hz~ 10 kHz kHz :: 400 400 Hz~ Hz~ 20 30 kHz : 400 Hz~ (%) 5 THD 3 20 kHz 1 Total harmonic distortion Total harmonic distortion THD (%) 5 0.5 0.3 10 kHz 0.1 0.05 0.03 3 1 20 kHz 0.5 0.3 10 kHz 0.1 0.05 0.03 1 kHz 1 kHz 0.01 0.01 f = 100 Hz f = 100 Hz 0.005 0.005 0.003 0.003 0.001 0.1 0.3 0.5 1 3 5 10 30 50 0.001 0.1 100 0.3 0.5 Output power POUT (W) THD – POUT (ch3) VCC = 13.2 V RL = 4 Ω 50 10 1kHz 100 30 50 100 100 Hz : ~30 kHz : 400 Hz~30 kHz 10 1kHz : 400 Hz~30 kHz 10 kHz : 400 Hz~ 20 kHz : 400 Hz~ 0.5 0.3 (%) 20 kHz 3 THD 5 1 Total harmonic distortion (%) 5 THD 30 50 30 Filter 10 kHz : 400 Hz~ Total harmonic distortion 10 VCC = 13.2 V RL = 4 Ω 100 Hz : ~30 kHz 1 5 100 30 Filter 3 3 THD – POUT (ch4) 100 50 1 Output power POUT (W) 10 kHz 0.1 0.05 0.03 20 kHz : 400 Hz~ 20 kHz 0.5 0.3 10 kHz 0.1 0.05 0.03 1 kHz 1 kHz 0.01 0.01 f = 100 Hz f = 100 Hz 0.005 0.005 0.003 0.001 0.1 0.003 0.3 0.5 1 3 5 10 30 50 0.001 0.1 100 Output power POUT (W) 0.3 0.5 1 3 5 10 Output power POUT (W) 9 2004-03-01 TB2913HQ(o) THD – POUT (ch1) THD – POUT (ch2) 100 50 30 100 VCC = 13.2 V 50 RL = 4 Ω f = 1 kHz 30 13.2 V Filter 10 400 Hz~30 kHz 10 f = 1 kHz 13.2 V 400 Hz~30 kHz (%) 1 THD 1 Total harmonic distortion (%) 3 THD 5 3 Total harmonic distortion RL = 4 Ω Filter 5 0.5 VCC = 9.0 V 0.3 16.0 V 0.1 0.05 0.03 0.5 0.05 0.03 0.01 0.005 0.003 0.003 1 3 5 10 30 50 0.001 0.1 100 0.3 0.5 Output power POUT (W) THD – POUT (ch3) 30 VCC = 13.2 V 50 RL = 4 Ω f = 1 kHz 30 13.2 V 10 30 50 100 VCC = 13.2 V RL = 4 Ω f = 1 kHz 13.2 V Filter 400 Hz~30 kHz 10 400 Hz~30 kHz (%) 1 THD 1 Total harmonic distortion (%) 3 THD 5 3 Total harmonic distortion 5 THD – POUT (ch4) 5 0.5 VCC = 9.0 V 0.3 16.0 V 0.1 0.05 0.03 0.5 0.05 0.03 0.005 0.005 0.003 0.003 1 3 5 10 30 50 0.001 0.1 100 Output power POUT (W) 16.0 V 0.1 0.01 0.3 0.5 VCC = 9.0 V 0.3 0.01 0.001 0.1 3 100 Filter 10 1 Output power POUT (W) 100 50 16.0 V 0.1 0.01 0.3 0.5 VCC = 9.0 V 0.3 0.005 0.001 0.1 VCC = 13.2 V 0.3 0.5 1 3 5 10 30 50 100 Output power POUT (W) 10 2004-03-01 TB2913HQ(o) muteATT – f R.R. – f 0 0 VCC = 13.2 V R.R. (dB) RL = 4 Ω VOUT = 20dBm −40 Ripple rejection ratio Mute attenuation muteATT (dB) VCC = 13.2 V −20 −60 −80 1 ch ~4ch −100 RL = 4 Ω −20 RG = 620 Ω Vrip =0dBm −40 4ch −60 1ch 3ch −120 10 100 1k frequency 10 k f 2ch −80 10 100 k 100 1k (Hz) frequency GV – f f 10 k 100 k 10 k 100 k (Hz) THD – f 40 3 Voltage gain 20 VCC = 13.2 V 10 RL = 4 Ω VOUT = 0dBm 0 10 100 1k frequency 10 k f (%) 0.3 Total harmonic distortion 1 ch ~4ch THD 30 GV (dB) VCC = 13.2 V 1 POUT = 5 W (Hz) No filter 0.1 0.03 2ch 4ch 0.01 3ch 1ch 0.003 0.001 10 100 k RL = 4 Ω 100 1k frequency 11 f (Hz) 2004-03-01 TB2913HQ(o) VIN – POUT (ch1) VIN – POUT (ch2) 40 40 1 kHz 1 kHz (W) 30 100 Hz f = 20 kHz 20 30 10 kHz POUT 10 kHz Output power Output power POUT (W) 100 Hz VCC = 13.2 V 10 RL = 4 Ω f = 20 kHz 20 VCC = 13.2 V 10 RL = 4 Ω No filter 0 0 2 4 Input voltage 6 VIN 8 No filter 0 0 10 2 (Vrms) 4 6 Input voltage VIN – POUT (ch3) (Vrms) 40 1 kHz 1 kHz 100 Hz (W) 100 Hz f = 20 kHz Output power 20 VCC = 13.2 V 10 30 10 kHz POUT 10 kHz 30 POUT (W) VIN RL = 4 Ω f = 20 kHz 20 VCC = 13.2 V 10 RL = 4 Ω No filter 0 0 2 4 Input voltage 6 VIN 8 No filter 0 0 10 2 (Vrms) 4 120 Allowable power dissipation PD MAX ( ) RL = ∞ VIN = 0 Quiescent Current Iccq (mA) 8 VIN 10 (Vrms) PD MAX – Ta Iccq -VCC 300 200 100 10 6 Input voltage 400 0 0 10 VIN – POUT (ch4) 40 Output power 8 20 RθJC = 1°C/W ② HEAT SINK (RθHS = 3.5°C/W) 100 RθJC + RθHS = 4.5°C/W ③ NO HEAT SINK 80 RθJA = 39°C/W ① 60 40 20 ② ③ 0 0 30 ① INFINITE HEAT SINK 25 50 75 Ambient temperature Supply voltage VCC (V) 12 100 125 150 Ta (°C) 2004-03-01 TB2913HQ(o) C.T. – f (ch1) C.T. – f (ch2) 0 0 VCC = 13.2 V VCC = 13.2 V RL = 4 Ω (dB) VOUT = 0dBm RG = 620 Ω C.T. −20 −40 Cross talk Cross talk C.T. (dB) RL = 4 Ω ch2 −60 −80 10 100 1k frequency −40 −60 ch1 ch3 ch3 ch4 ch4 10 k f VOUT = 0dBm RG = 620 Ω −20 −80 10 100 k 100 (Hz) frequency C.T. – f (ch3) f 100 k (Hz) 0 VCC = 13.2 V VCC = 13.2 V RL = 4 Ω RL = 4 Ω C.T. (dB) VOUT = 0dBm −20 RG = 620 Ω −40 Cross talk (dB) C.T. 10 k C.T. – f (ch4) 0 Cross talk 1k ch1 ch2 −60 VOUT = 0dBm RG = 620 Ω −20 −40 −60 ch1 ch2 ch4 ch3 −80 10 100 1k frequency 10 k f −80 10 100 k (Hz) VNO – Rg (µVrms) 10 k f 100 k (Hz) PD – POUT 80 VCC = 13.2 V f = 1 kHz RL = 4 Ω RL = 4 Ω PD (W) Filter ~20 kHz 200 Power dissipation VNO 1k frequency 300 Output noise voltage 100 1ch~4ch 100 4ch drive 18 V 60 16 V 40 13.2 V 20 9.0 V 0 10 100 1k Signal source resistance 10 k Rg 0 0 100 k (Ω) 10 15 20 25 Output power POUT (W) 13 2004-03-01 TB2913HQ(o) Package Dimensions Weight: 7.7 g (typ.) 14 2004-03-01 TB2913HQ(o) RESTRICTIONS ON PRODUCT USE 030619EBF • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The products described in this document are subject to the foreign exchange and foreign trade laws. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. • This product generates heat during normal operation. However, substandard performance or malfunction may cause the product and its peripherals to reach abnormally high temperatures. The product is often the final stage (the external output stage) of a circuit. Substandard performance or malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the product. 15 2004-03-01