HA17080 Series J-FET Input Operational Amplifiers Description Since J-FET input operational amplifiers are formed from a pair of J-FET transistors, they provide superlative characteristics, including a high input impedance and a low input bias current. Thus they can be used in a wide range of applications, from general-purpose control equipment to medical applications. In particular, they are optimal for processing signals from high-impedance sensors. Hitachi J-FET input operational amplifiers are available in single, dual, and quad versions. Other than the HA17080, all products are internal phase compensation types and include a built-in phase compensation capacitor. The HA17080 and the HA17083 allow offset adjustment. These products are also available in “A” grade versions with superlative electrical characteristics to allow the selection of an operational amplifier appropriate for the application. Features • • • • • • • • • Wide operating power supply voltage range: ±5 V to ±18 V Low input bias current: 30 pA Low input offset current: 5 pA High input impedance: 1012 Ω High slew rate: 13 V/µs Wide common mode input voltage range with operation possible near the power-supply voltage (VCC). High voltage gain: 106 dB The HA17080 and HA17083 support offset adjustment. Pin compatible with the Texas Instruments TL080 series. Notes: 1. Since these products are high input impedance operational amplifiers, contamination may cause the input bias and input offset currents to increase if they are handled with bare hands. Avoid contamination when handling these devices. 2. Since these products provide a high slew rate, oscillation may occur due to load capacitances. (CL < 100 pF: voltage follower mode) HA17080 Series Ordering Information Type No. Item HA17080 HA17082 HA17083 HA17084 Number of operational amplifiers (number of channels) Single Dual Dual Quad Offset adjustment pin Yes No Yes No Phase compensation type External Internal Internal Internal Pin Arrangement HA17080 Offset Null/Comp 1 Vin(−) 2 Vin(+) 3 VEE 4 HA17082 8 Comp Vout1 1 − 7 VCC Vin(−)1 2 + 6 Vout Vin(+)1 3 5 Offset Null VEE 4 − 1 + 2 (Top view) (Top view) HA17083 HA17084 Vin(−)1 1 Offset 14 Null (N1) Vin(+)1 2 Offset Null (N2) 3 VEE 4 − + 1 − + 8 VCC 7 Vout2 6 Vin(−)2 5 Vin(+)2 Vout1 1 13 VCC Vin(−)1 2 12 Vout1 Vin(+)1 3 12 Vin(+)4 VCC 4 11 VEE 10 Vout2 Vin(+)2 5 10 Vin(+)3 Vin(−)2 6 Vout2 7 11 NC 14 Vout4 − 1 4 + + − 13 Vin(−)4 + Vin(+)2 6 9 VCC Vin(−)2 7 8 Offset Null (N1) − 2 (Top view) 2 − + 2 + 5 − Offset Null (N2) 3 (Top view) 9 Vin(−)3 8 Vout3 HA17080 Series Voltage Offset Test Circuit VCC 1 MΩ Offset 2 MΩ Null/Comp Offset Null − + CC N2 N1 − 100 KΩ Comp + VEE HA17083 HA17080 Circuit Structure VCC Vin(+) Vin(−) Offset Null/Comp HA17080 Offset Null only Comp Vout To VCC To VCC VEE Offset Null (N1) Offset Null (N2) HA17083 only Note: The HA17080 does not have an internal phase compensation capacitor. 3 HA17080 Series Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings (P, PS Series) Unit Notes Power-supply voltage VCC +18 V VEE –18 V Differential input voltage Vin(diff) ±30 V Input voltage Vin ±15 V 1 Allowable power dissipation PT 625 mW 2 Operating temperature Topr –20 to +75 °C Storage temperature Tstg –55 to +125 °C Notes: 1. When the power-supply voltage is less than ±15 V, the input voltage must fall within the powersupply voltage range. 2. These are the allowable values up to Ta = 50°C for the P and PS series. Derate by 8.3 mW/°C above that temperature. 4 HA17080 Series Electrical Characteristics (VCC = –VEE = 15 V, Ta = 25°C) HA17080 Series HA17080A Series Item Symbol Min Typ Max Min Typ Max Unit Test Conditions Notes Input offset voltage VIO — 5 15 — 3 6 mV RS = 50 Ω 1 Input offset current IIO — 5 200 — 5 100 pA IIO = | IIB(+) – IIB(–) | 1 Input bias current IIB — 30 400 — 30 200 pA 1, 2 Common-mode input voltage range VCM ±10 — — ±11 — — V 1 Maximum output voltage amplitude Vop-p 24 27 — 24 27 — V 20 24 — 20 24 — RL ≥ 10 kΩ RL ≥ 2 kΩ Voltage Gain AVD 88 106 — 94 106 — dB RL ≥ 2 kΩ, VO = ±10 V 1 Common-mode rejection ratio CMR 70 86 — 80 86 — dB RS ≤ 10 kΩ 1 Power supply rejection ratio PSRR 70 86 — 80 86 — dB RS ≤ 10 kΩ 1 Supply current ICC — 1.4 2.8 — 1.4 2.8 mA Bandwidth BW — 3 — — 3 — MHz AVD = 1 Slew rate SR — 13 — — 13 — V/µs Vin = 10 V, RL = 2 kΩ, CL = 100 pF, AVD = 1 Channel separation CS — 120 — — 120 — dB AVD = 100 Rise time tr — 0.1 — — 0.1 — µs Vin = 20 mV, RL = 2 kΩ Overshoot Vover — 10 — — 10 — % CL = 100 pF, AVD = 1 Input resistance Rin — 1012 — — 1012 — Ω Input noise voltage Vn — 35 — — 35 — nV/√Hz RS = 100 Ω, f = 1 kHz 3 Notes: 1. The non-A ratings apply to the HA17080, HA17082, HA17083, and HA17084. The A version ratings apply to the HA17080A, HA17082A, HA17083A, and HA17084A. 2. This is the J-FET gate leakage current, which is temperature dependent. The junction temperature must be held near room temperature when measuring this parameter. 3. This is the per-channel value. 5 HA17080 Series Characteristic Curves Input Bias Current vs. Ambient Temperature Input Bias Current vs. Common-Mode Input Voltage 120 Input bias current IIB (pA) VCC = +15 V VEE = −15 V VCM = 0 V 1k 100 10 −50 −25 25 50 75 30 15 VCC = +15 V VEE = −15 V Ta = 25°C 5 1k 10 k 100 k 1M 10 25 2 kΩ 20 15 10 VCC = +15 V VEE = −15 V 5 −25 0 25 50 75 100 Ambient temperature Ta (°C) Maximum Output Voltage Amplitude vs. Load Resistance Maximum Output Voltage Amplitude vs. Power-Supply Voltage 30 Maximum output voltage amplitude VOP-P (V) Maximum output voltage amplitude VOP-P (V) 5 Frequency f (Hz) VCC = +15 V VEE = −15 V Ta = 25°C 20 15 10 5 0.2 0.5 1.0 2 Load resistance RL (kΩ) 6 0 RL = 10 kΩ 0 −50 10 M 30 0 0.1 −5 Maximum Output Voltage Amplitude vs. Ambient Temperature 20 25 20 Maximum Output Voltage Amplitude vs. Frequency 2 kΩ 100 40 Common-mode input voltage VCM (V) 25 0 60 0 −10 100 RL = 10 kΩ 10 80 Ambient temperature Ta (°C) 30 Maximum output voltage amplitude VOP-P (V) 0 VCC = +15 V VEE = −15 V Ta = 25°C 100 Maximum output voltage amplitude VOP-P (V) Input bias current IIB (pA) 10 k 5 10 RL = 10 kΩ Ta = 25°C 25 20 15 10 5 0 0 ±3 ±6 ±9 ±12 ±15 Power-supply voltage VCC, VEE (V) ±18 HA17080 Series Voltage Gain vs. Frequency (1) Voltage Gain vs. Frequency (2) 150 150 VCC = +15 V VEE = −15 V RL = 10 kΩ Ta = 25°C 100 75 50 100 75 50 25 25 0 10 0 1 10 100 1k 10 k 100 k 1 M 10 M 100 100 k 1M Voltage Gain vs. Ambient Temperature Input Noise Voltage vs. Frequency 10 M Input noise voltage Vn (nV/√Hz) 120 100 75 50 VCC = +15 V VEE = −15 V RL = 2 kΩ 25 0 −50 −25 0 25 50 75 VCC = +15 V VEE = −15 V RS = 100 Ω Ta = 25°C 100 80 60 40 20 0 10 100 100 Ambient temperature Ta (°C) 120 120 Power-supply rejection ratio PSRR (dB) VCC = +15 V VEE = −15 V Ta = 25°C 100 80 60 40 20 100 1k 10 k 100 k Frequency f (Hz) 1M 1k 10 k 100 k Frequency f (Hz) Common-Mode Rejection Ratio vs. Frequency Common-mode rejection ratio CMR (dB) 10 k Frequency f (Hz) 125 0 10 1k Frequency f (Hz) 150 Voltage gain AVD (dB) VCC = +15 V VEE = −15 V CL = 3 pF Ta = 25°C 125 Voltage gain AVD (dB) Voltage gain AVD (dB) 125 10 M Power-Supply Rejection Ratio vs. Frequency VCC = +15 V VEE = −15 V Ta = 25°C 100 80 VCC 60 VEE 40 20 0 10 100 1k 10 k 100 k 1M 10 M Frequency f (Hz) 7 HA17080 Series Supply current vs. Power-Supply Voltage 2.4 Supply current vs. Ambient Temperature 2.4 Supply current ICC ± (mA) 2.0 1.6 1.2 0.8 0.4 0 ±3 0 ±9 ±12 ±15 1.2 0.8 0.4 120 ±3 0 ±6 ±9 ±12 ±15 50 60 40 20 0 Input −2 −4 0.5 1 1.5 2 Time t (µs) 2.5 3 25 50 75 100 3.5 VCC = +15 V VEE = −15 V RS = 51 Ω Rf = 5.1 kΩ R = 100 kΩ +1.0 0 −1.0 −2.0 0 0 HA17083 Offset Adjustment +2.0 Output Voltage Vout (V) Output −25 Ambient temperature Ta (°C) VCC = +15 V VEE = −15 V RL = 2 kΩ CL = 100 pF Ta = 25°C 2 100 75 80 0 −50 ±18 Voltage Follower Large Signa Pulse Response 4 Output Voltage Vout (V) 25 VCC = +15 V No signal VEE = –15 V No load Per channel 100 Power-supply voltage VCC, VEE (V) 8 0 Power Dissipation vs. Ambient Temperature 20 −6 −25 Power Dissipation vs. Power-Supply Voltage 40 6 VCC = +15 V VEE = −15 V No signal No load Per channel Ambient temperature Ta (°C) 60 0 1.6 0 −50 ±18 Ta = 25°C No signal No load 80 2.0 Power-supply voltage VCC, VEE (V) 100 Power dissipation Pd (mW) ±6 Power dissipation Pd (mW) Supply current ICC ± (mA) Ta = 25°C 0 50 Resistor position a (%) 100 HA17080 Series Package Dimensions Unit: mm 6.3 7.4 Max 9.6 10.6 Max 8 5 1 0.89 4 1.3 0.1 Min 7.62 2.54 Min 5.06 Max 1.27 Max + 0.10 0.25 – 0.05 0.48 ± 0.10 2.54 ± 0.25 0° – 15° Hitachi Code JEDEC EIAJ Mass (reference value) DP-8 Conforms Conforms 0.54 g Unit: mm 19.20 20.32 Max 8 6.30 7.40 Max 14 1.30 7 2.54 ± 0.25 0.48 ± 0.10 0.51 Min 2.39 Max 2.54 Min 5.06 Max 1 7.62 + 0.10 0.25 – 0.05 0° – 15° Hitachi Code JEDEC EIAJ Mass (reference value) DP-14 Conforms Conforms 0.97 g 9 HA17080 Series Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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