HM62W8512BI Series 4 M SRAM (512-kword × 8-bit) ADE-203-1086A (Z) Rev. 1.0 Jul. 13, 1999 Description The Hitachi HM62W8512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM62W8512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM62W8512BI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 32-pin TSOP II. Features • Single 3.3 V supply: 3.3 V ± 0.3V • Access time: 70/85 ns (max) • Power dissipation Active: 16.5 mW/MHz (typ) Standby: 3.3 µW (typ) • Completely static memory. No clock or timing strobe required • Equal access and cycle times • Common data input and output: Three state output • Directly LV-TTL compatible: All inputs and outputs • Battery backup operation • Operating temperature: –40 to +85˚C Ordering Information Type No. Access time Package HM62W8512BLTTI-7 HM62W8512BLTTI-8 70 ns 85 ns 400-mil 32-pin plastic TSOP II (TTP-32D) HM62W8512BI Series Pin Arrangement 32-pin TSOPII (Normal Type TSOP) A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 (Top view) Pin Description Pin name Function A0 to A18 Address input I/O0 to I/O7 Data input/output CS Chip select OE Output enable WE Write enable VCC Power supply VSS Ground 2 VCC A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 HM62W8512BI Series Block Diagram A18 V CC A16 V SS A1 A0 A2 A12 Row Decoder • • • • • Memory Matrix 1,024 × 4,096 A14 A3 A7 A6 I/O0 Column I/O • • Input Data Control • • Column Decoder I/O7 A13 A17A15A8 A9 A11A10 A4 A5 • • CS WE Timing Pulse Generator Read/Write Control OE 3 HM62W8512BI Series Function Table WE CS OE Mode VCC current Dout pin Ref. cycle × H × Not selected I SB , I SB1 High-Z — H L H Output disable I CC High-Z — H L L Read I CC Dout Read cycle L L H Write I CC Din Write cycle (1) L L L Write I CC Din Write cycle (2) Note: ×: H or L Absolute Maximum Ratings Parameter Symbol Value Power supply voltage VCC –0.5 to +4.6 1 Unit V 2 Voltage on any pin relative to V SS VT –0.5* to V CC + 0.5* V Power dissipation PT 1.0 W Operating temperature Topr –40 to +85 °C Storage temperature Tstg –55 to +125 °C Storage temperature under bias Tbias –40 to +85 °C Notes: 1. –3.0 V for pulse half-width ≤ 30 ns 2. Maximum voltage is 4.6 V Recommended DC Operating Conditions (Ta = –40 to +85°C) Parameter Symbol Min Typ Max Unit Supply voltage VCC 3.0 3.3 3.6 V VSS 0 0 0 V VIH 2.4 — VCC + 0.3 V — 0.6 V Input high voltage Input low voltage Note: 4 VIL 1. –3.0 V for pulse half-width ≤ 30 ns –0.3 *1 HM62W8512BI Series DC Characteristics (Ta = –40 to +85°C, VCC = 3.3 V ± 0.3 V, VSS = 0 V) Parameter Symbol Min Typ*1 Max Unit Test conditions Input leakage current |ILI| — — 1 µA Vin = VSS to V CC Output leakage current |ILO | — — 1 µA CS = VIH or OE = VIH or WE = VIL, VI/O = VSS to V CC Operating power supply current: DC I CC — — 10 mA CS = VIL, others = VIH/VIL, I I/O = 0 mA Operating power supply current I CC1 — — 45 mA Min cycle, duty = 100% CS = VIL, others = VIH/VIL I I/O = 0 mA Operating power supply current I CC2 — 5 10 mA Cycle time = 1 µs, duty = 100% I I/O = 0 mA, CS ≤ 0.2 V VIH ≥ V CC – 0.2 V, VIL ≤ 0.2 V Standby power supply current: DC I SB — 0.1 0.3 mA CS = VIH Standby power supply current (1): DC I SB1 — 1* 2 40* 2 µA Vin ≥ 0 V, CS ≥ V CC – 0.2 V Output low voltage VOL — — 0.4 V I OL = 2.0 mA — — 0.2 V I OL = 100 µA VCC – 0.2 — — V I OH = –100 µA 2.4 — V I OH = –2.0 mA Output high voltage Note: VOH — 1. Typical values are at VCC = 3.3 V, Ta = +25°C and specified loading, and not guaranteed. 2. This characteristics is guaranteed only for L-version. Capacitance (Ta = +25°C, f = 1 MHz) Parameter 1 Input capacitance* Input/output capacitance* Note: 1 Symbol Typ Max Unit Test conditions Cin — 8 pF Vin = 0 V CI/O — 10 pF VI/O = 0 V 1. This parameter is sampled and not 100% tested. 5 HM62W8512BI Series AC Characteristics (Ta = –40 to +85°C, VCC = 3.3 V ± 0.3 V, unless otherwise noted.) Test Conditions • • • • • Input pulse levels: 0.4 V to 2.4 V Input rise and fall time: 5 ns Input timing reference levels: 1.4 V Output timing reference level: 0.8 V/2.0 V Output load (Including scope & jig) 500 Ω Dout 1.4 V 50 pF Read Cycle HM62W8512BI -7 -8 Parameter Symbol Min Max Min Max Unit Read cycle time t RC 70 — 85 — ns Address access time t AA — 70 — 85 ns Chip select access time t CO — 70 — 85 ns Output enable to output valid t OE — 35 — 45 ns Chip selection to output in low-Z t LZ 10 — 10 — ns 2 Output enable to output in low-Z t OLZ 5 — 5 — ns 2 Chip deselection to output in high-Z t HZ 0 30 0 35 ns 1, 2 Output disable to output in high-Z t OHZ 0 30 0 35 ns 1, 2 Output hold from address change t OH 10 — 10 — ns 6 Notes HM62W8512BI Series Write Cycle HM62W8512BI -7 -8 Parameter Symbol Min Max Min Max Unit Notes Write cycle time t WC 70 — 85 — ns Chip selection to end of write t CW 60 — 75 — ns 4 Address setup time t AS 0 — 0 — ns 5 Address valid to end of write t AW 60 — 75 — ns Write pulse width t WP 50 — 55 — ns 3, 12 Write recovery time t WR 0 — 0 — ns 6 WE to output in high-Z t WHZ 0 30 0 35 ns 1, 2, 7 Data to write time overlap t DW 30 — 35 — ns Data hold from write time t DH 0 — 0 — ns Output active from output in high-Z t OW 5 — 5 — ns 2 Output disable to output in high-Z t OHZ 0 30 0 35 ns 1, 2, 7 Notes: 1. t HZ , t OHZ and t WHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referred to output voltage levels. 2. This parameter is sampled and not 100% tested. 3. A write occurs during the overlap (tWP) of a low CS and a low WE. A write begins at the later transition of CS going low or WE going low. A write ends at the earlier transition of CS going high or WE going high. tWP is measured from the beginning of write to the end of write. 4. t CW is measured from CS going low to the end of write. 5. t AS is measured from the address valid to the beginning of write. 6. t WR is measured from the earlier of WE or CS going high to the end of write cycle. 7. During this period, I/O pins are in the output state so that the input signals of the opposite phase to the outputs must not be applied. 8. If the CS low transition occurs simultaneously with the WE low transition or after the WE transition, the output remain in a high impedance state. 9. Dout is the same phase of the write data of this write cycle. 10. Dout is the read data of next address. 11. If CS is low during this period, I/O pins are in the output state. Therefore, the input signals of the opposite phase to the outputs must not be applied to them. 12. In the write cycle with OE low fixed, tWP must satisfy the following equation to avoid a problem of data bus contention. t WP ≥ tDW min + tWHZ max 7 HM62W8512BI Series Timing Waveforms Read Timing Waveform (WE = VIH) tRC Address tAA tCO CS tLZ tHZ tOE tOLZ OE tOHZ Dout Valid Data tOH 8 HM62W8512BI Series Write Timing Waveform (1) (OE Clock) tWC Address tAW tWR OE tCW CS *8 tWP tAS WE tOHZ Dout tDW Din tDH Valid Data 9 HM62W8512BI Series Write Timing Waveform (2) (OE Low Fixed) tWC Address tCW tWR CS *8 tAW tWP WE tOH tAS tOW tWHZ *9 Dout tDW tDH *11 Din 10 Valid Data *10 HM62W8512BI Series Low VCC Data Retention Characteristics (Ta = –40 to +85°C) Parameter Symbol Min Typ VCC for data retention VDR 2 — Data retention current I CCDR — Chip deselect to data retention time t CDR 0 Operation recovery time tR t RC* 0.8* 4 3 Max Unit Test conditions*2 — V CS ≥ V CC – 0.2 V, Vin ≥ 0 V µA VCC = 3.0 V, Vin ≥ 0 V CS ≥ V CC – 0.2 V See retention waveform 20* 1 — — ns — — ns Notes: 1. For L-version and 10 µA (max.) at Ta = –40 to +40°C. 2. CS controls address buffer, WE buffer, OE buffer, and Din buffer. In data retention mode, Vin levels (address, WE, OE, I/O) can be in the high impedance state. 3. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed. 4. t RC = read cycle time. Low V CC Data Retention Timing Waveform (CS Controlled) tCDR Data retention mode tR VCC 3.0 V 2.4 V VDR CS 0V CS ≥ VCC – 0.2 V 11 HM62W8512BI Series Package Dimensions HM62W8512BLTTI Series (TTP-32D) Unit: mm 20.95 21.35 Max 17 10.16 32 1.27 *0.42 ± 0.08 0.40 ± 0.06 0.21 16 M 0.80 11.76 ± 0.20 0.10 *Dimension including the plating thickness Base material dimension 12 *0.17 ± 0.05 0.125 ± 0.04 1.20 Max 1.15 Max 0.13 ± 0.05 1 0° – 5° 0.50 ± 0.10 Hitachi Code JEDEC EIAJ Weight (reference value) TTP-32D Conforms — 0.51 g HM62W8512BI Series Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 13 HM62W8512BI Series Revision Record Rev. Date 1.0 14 Contents of Modification Jul. 13, 1999 Initial issue Drawn by Approved by