HITACHI HSK83

HSK83
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-169C(Z)
Rev 3
Dec. 1998
Features
• High reverse voltage. (VR=250V)
• LLD package is suitable for high density surface mounting and high speed assembly
Ordering Information
Type No.
Cathode band
2nd band
Package Code
HSK83
White
Verdure
LLD
Outline
Cathode band
1
2
2nd. band
Cathode band
1
2
2nd. band
1. Cathode
2. Anode
HSK83
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Peak reverse voltage
VRM
300
V
Reverse voltage
VR
250
V
Peak forward current
I FM
625
mA
1
A
*1
Non-Repetitive peak
forward surge current
I FSM
Average rectified current
IO
150
mA
Junction temperature
Tj
175
°C
Storage temperature
Tstg
-65 to +175
°C
Note
1. Value at duration of 1s.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
VF
—
—
1.0
V
I F = 100 mA
Reverse current
I R1
—
—
0.1
µA
VR = 250V
I R2
—
—
100
Capacitance
C
—
1.5
—
pF
VR = 0V, f = 1 MHz
Reverse recovery
time
t rr
—
—
100
ns
I F = IR =30 mA, Irr = 3mA, RL = 100Ω
2
VR = 300V
HSK83
Main Characteristic
-1
-5
10
10
Ta=75°C
Reverse current I R (A)
(A)
-6
10
10
Ta=
1
Ta= 25°C
75°
C
Ta=
25°C
Ta=25°C
Forward current I F
-2
-3
10
Ta=50°C
-7
10
Ta=25°C
10
-8
-9
-4
10
10
0
0.2
0.8
0.4 0.6
1.0
Forward voltage V F (V)
1.2
Fig.1 Forward current Vs. Forward voltage
0
150
50
200
100
Reverse voltage V R (V)
250
Fig.2 Reverse current Vs. Reverse voltage
f=1MHz
Capacitance C (pF)
10
1.0
-1
10
1.0
10
Reverse voltage V R (V)
2
10
Fig.3 Capacitance Vs. Reverse voltage
3
HSK83
Package Dimensions
Unit : mm
1
+0.1
–0.2
3.5
φ 1.35 ± 0.1
φ 1.35 ± 0.1
3.5
2
1
2
(0.35typ)
2nd. band (Verdure)
Cathode band (White)
(0.35typ)
2nd. band (Verdure)
Cathode band (White)
( ) : Reference only
4
+0.1
–0.2
1. Cathode
2. Anode
Hitachi Code
JEDECCode
EIAJCode
Weight(g)
LLD
\
\
0.027
HSK83
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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For further information write to:
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(America) Inc.
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Germany
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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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