HSS82 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-176A (Z) Rev. 1 Jul. 1995 Features • High reverse voltage. (VR = 200V) • Suitable for 5mm pitch high speed automatical insertion. • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. Cathode band Package Code HSS82 Navy Blue MHD Outline 2 1 Cathode band 1. Cathode 2. Anode HSS82 Absolute Maximum Ratings* 2 (Ta = 25°C) Item Symbol Peak reverse voltage VRM* Reverse voltage VR Peak forward current I FM 1 2 Value Unit 250 V 200 V 625 mA 1 A Non-Repetitive peak forward surge current I FSM * Average forward current IO 150 mA Power dissipation Pd 400 mW Junction temperature Tj 200 °C Storage temperature Tstg –65 to +175 °C Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic. 2. Within 1s forward surge current. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V I F = 100mA Reverse current I R1 — — 0.2 µA VR = 200V I R2 — — 100 Capacitance C — 1.5 — pF VR = 0V, f = 1MHz Reverse recovery time t rr — — 100 ns I F = IR = 30mA, Irr = 3mA, R L = 100Ω 2 VR = 250V HSS82 –1 –2 12 Ta = 5°C 7 T a = 5 °C 25°C Ta = –25° C 10 Ta = Forward current I F (A) 10 10 –3 –4 10 0 0.2 0.8 0.4 0.6 1.0 Forward voltage VF (V) 1.2 Fig.1 Forward current Vs. Forward voltage –5 10 Ta = 75°C Reverse current I R (A) –6 10 Ta = 50°C –7 10 Ta = 25°C 10 –8 –9 10 0 50 150 200 250 100 Reverse voltage VR (V) 300 Fig.2 Reverse current Vs. Reverse voltage 3 HSS82 f = 1MHz Capacitance C (pF) 10 1.0 –1 10 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 4 102 HSS82 Package Dimensions Unit: mm 2.4 Max 26.0 Min 1 φ 0.4 φ 2.0 Max 26.0 Min 1 Cathode 2 2 Anode Cathode band (Navy Blue) HITACHI Code MHD JEDEC Code DO-34 EIAJ Code — Weight (g) 0.084 5 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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