HITACHI HSS82

HSS82
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-176A (Z)
Rev. 1
Jul. 1995
Features
• High reverse voltage. (VR = 200V)
• Suitable for 5mm pitch high speed automatical insertion.
• Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No.
Cathode band
Package Code
HSS82
Navy Blue
MHD
Outline
2
1
Cathode band
1. Cathode
2. Anode
HSS82
Absolute Maximum Ratings* 2 (Ta = 25°C)
Item
Symbol
Peak reverse voltage
VRM*
Reverse voltage
VR
Peak forward current
I FM
1
2
Value
Unit
250
V
200
V
625
mA
1
A
Non-Repetitive peak forward surge current
I FSM *
Average forward current
IO
150
mA
Power dissipation
Pd
400
mW
Junction temperature
Tj
200
°C
Storage temperature
Tstg
–65 to +175
°C
Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic.
2. Within 1s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
VF
—
—
1.0
V
I F = 100mA
Reverse current
I R1
—
—
0.2
µA
VR = 200V
I R2
—
—
100
Capacitance
C
—
1.5
—
pF
VR = 0V, f = 1MHz
Reverse recovery time
t rr
—
—
100
ns
I F = IR = 30mA, Irr = 3mA, R L = 100Ω
2
VR = 250V
HSS82
–1
–2
12
Ta = 5°C
7
T a = 5 °C
25°C
Ta =
–25°
C
10
Ta =
Forward current I F (A)
10
10
–3
–4
10
0
0.2
0.8
0.4 0.6
1.0
Forward voltage VF (V)
1.2
Fig.1 Forward current Vs. Forward voltage
–5
10
Ta = 75°C
Reverse current I R (A)
–6
10
Ta = 50°C
–7
10
Ta = 25°C
10
–8
–9
10
0
50
150 200 250
100
Reverse voltage VR (V)
300
Fig.2 Reverse current Vs. Reverse voltage
3
HSS82
f = 1MHz
Capacitance C (pF)
10
1.0
–1
10
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance Vs. Reverse voltage
4
102
HSS82
Package Dimensions
Unit: mm
2.4 Max
26.0 Min
1
φ 0.4
φ 2.0
Max
26.0 Min
1 Cathode
2
2 Anode
Cathode band (Navy Blue)
HITACHI Code
MHD
JEDEC Code
DO-34
EIAJ Code
—
Weight (g)
0.084
5
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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