'9 9 n ew ! HMC132G7 HMC132P7 MICROWAVE CORPORATION GaAS MMIC HIGH-ISOLATION SPDT SWITCH DC - 6 GHZ FEBRUARY 2001 Features General Description BANDWIDTH: DC-6 GHz The HMC132G7 and HMC132P7 are the packaged versions of the HMC132 MMIC SPDT switch. Both use the same 7-pin ceramic package but with modified lead configurations. The G7 suffix designates package leads configured for surface mount while the P7 suffix designates package leads configured for microstrip insertion. The device is a fast, broadband SPDT switch featuring high (> 40 dB) isolation over the entire band. The switch is non-reflective at both RF1 and RF2 ports. HIGH ISOLATION : > 40 dB NON-REFLECTIVE DESIGN SMT SPDT SWITCHES 7 Guaranteed Performance, With 0/-5V control, 50 Ohm System, -55 to +85 deg C Parameter Frequency Min. Typ. Max. Units 1.5 2.2 1.9 2.6 dB dB Inser tion Loss DC - 3 GHz DC - 6 GHz Isolation DC - 3 GHz DC - 6 GHz 45 35 50 40 dB dB Return Loss DC - 3 GHz DC - 6 GHz 14 5 18 8 dB dB Input Power for 0.1dB Compression 0.5 - 6 GHz +20 +25 dB m Input Power for 1dB Compression 0.5 - 6 GHz +22 +27 dB m Input Third Order Intercept 0.5 - 6 GHz +38 +42 dB m Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 6 GHz 3 6 ns ns 12 Elizabeth Drive, Chelmsford, MA 01824 7 - 12 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com '9 w ! MICROWAVE CORPORATION 9 ne HMC132G7 HMC132P7 HMC132G7 / HMC132P7 HIGH-ISOLATION SPDT SWITCH DC - 6 GHZ FEBRUARY 2001 Isolation Insertion Loss 0 0 -10 ISOLATION (dB) INSERTION LOSS (dB) -1 -2 -3 -20 -30 -40 -50 -60 -4 -70 -5 0 1 2 3 4 5 6 0 7 1 2 3 4 5 FREQUENCY (GHz) 6 7 FREQUENCY (GHz) 7 SWITCHES Return Loss -10 SPDT RETURN LOSS (dB) 0 -20 0 1 2 3 4 5 6 SMT -30 7 FREQUENCY (GHz) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 13 '9 9 n ew ! HMC132G7 HMC132P7 MICROWAVE CORPORATION HMC132G7 / HMC132P7 HIGH-ISOLATION SPDT SWITCH DC - 6 GHZ FEBRUARY 2001 Truth Table Schematic RF COM Control Input A RF2 RF1 Signal Path State B RF to RF1 RF to RF2 H i gh Low ON OFF Low H i gh OFF ON Do not "HOT" switch power levels > +15 dBm ( Vctl = 0/-5Vdc) A B Control Voltages (BACKSIDE IS GND) Absolute Maximum Ratings Control Voltage Range Storage Temperature Operating Temperature +0.5 to -7.5 Vdc -65 to +150 deg C -55 to +125 deg C Outline: HMC132G7 SWITCHES 7 State Bias Condition Low 0 to -0.2V @ 20uA Max. H i gh -5V@200uA Typ to -7V@600uA Max Outline: HMC132P7 0.260 0.320 +/- 0.012 0.025 0.005 0.130 0.260 0.130 0.005 RFCOM +/- 0.001 7 PLCS 7 PLCS +/- 0.001 7 PLCS RFCOM 0.050 +/- 0.020 7 PLCS SPDT 0.276 +/- 0.012 RF1 0.215 RF1 0.215 RF2 0.010 0.085 +/- 0.002 7 PLCS 0.085 +/- 0.002 7 PLCS RF2 0.010 CASE BOTTOM IS GROUND CASE BOTTOM IS GROUND GND A B 0.210 +/- 0.020 GND A B TYP 7 PL GND GND 0.000/0.010 SMT 0.062 0.045 TYP 0.135 TYP 1) 2. 3. 4. 0.062 0.065 MAX 0.135 TYP MATERIAL: A) PACKAGE - BODY : WHITE ALUMINA (92%) B) LEADS - PACKAGE COVER: KOVAR (tm) C) CONDUCTOR TRACES - THICKFILM TUNGSTEN PLATING (LEADS): ELECTROLYTIC GOLD 50 MICROINCHES MINIMUM OVER ELECTROLYTIC NICKEL 50 MICROINCHES MINIMUM. ALL UNLABELED PINS ARE GROUND. ALL DIMENSIONS ARE IN INCHES 12 Elizabeth Drive, Chelmsford, MA 01824 7 - 14 0.065 MAX 0.045 TYP Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com '9 w ! MICROWAVE CORPORATION 9 ne HMC132G7 HMC132P7 HMC132G7 / HMC132P7 HIGH-ISOLATION SPDT SWITCH DC - 6 GHZ FEBRUARY 2001 Suggested Driver Circuit for HMC132G7/P7 Vz=5.1V Izt=50uA COMPENSATED DEVICES CD4689 TTL OR CMOS A GaAs SWITCH CONTROL VCC VCC GND GND 10K B 74HCT04 (TTL) 74HC04 (CMOS) -5 VDC 7 SMT SPDT SWITCHES Simple driver using inexpensive standard logic ICs provides fast switching using minimum DC current. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 15