HMC232C8 v02.1203 MICROWAVE CORPORATION GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz Typical Applications Features The HMC232C8 is ideal for: Isolation: 55 dB @ 2.0 GHz 43 dB @ 6.0 GHz • Telecom Infrastructure Insertion Loss: 1.6 dB Typical @ 6.0 GHz • Microwave Radio & VSAT Non-Reflective Design • Military Radios, Radar & ECM Surface Mount Ceramic Package • Test Instrumentation Direct Replacement for HMC132C8 General Description Functional Diagram The HMC232C8 is a broadband high isolation non-reflective GaAs MESFET SPDT switch in a non-hermetic surface mount ceramic package. Covering DC to 8.0 GHz, the switch features >55 dB isolation up to 2 GHz and >42 dB isolation up to 8.0 GHz. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply. This product is a form, fit & functional replacement for the HMC132C8. SWITCHES - SMT 14 14 - 88 Electrical Specifications, TA = +25° C, With 0/-5V Control, 50 Ohm System Parameter Frequency Min. DC - 2.0 GHz DC - 6.0 GHz DC - 8.0 GHz Insertion Loss DC - 2.0 GHz DC - 6.0 GHz DC - 8.0 GHz Isolation 50 38 37 Typ. Max. Units 1.2 1.6 2.2 1.5 2.0 2.8 dB dB dB 55 43 42 dB dB dB Return Loss “On State” DC - 2.0 GHz DC - 6.0 GHz DC - 8.0 GHz 19 12 10 dB dB dB Return Loss RF1, RF2 “Off State” DC - 2.0 GHz DC - 6.0 GHz DC - 8.0 GHz 13 8 7 dB dB dB Input Power for 1 dB Compression 0.5 - 8.0 GHz 22 26 dBm Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation) 0.5 - 8.0 GHz 40 46 dBm Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 8.0 GHz 3 5 ns ns For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC232C8 v02.1203 MICROWAVE CORPORATION GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz GaAs MMIC Insertion Loss SUB-HARMONICALLY Isolation PUMPED MIXER 17 - 25 GHz 0 0 -10 ISOLATION (dB) INSERTION LOSS (dB) -1 -2 -3 + 25C + 85C - 40C -4 RF1 RF2 -20 -30 -40 -50 -60 -5 -70 1 2 3 4 5 6 7 0 8 1 2 3 FREQUENCY (GHz) Return Loss 5 6 7 8 0.1 and 1 dB Input Compression Point 35 0 RFC RF1, RF2 ON RF1, RF2 OFF -10 -15 -20 14 1 dB Compression Point 0.1 dB Compression Point 30 INPUT P1dB (dBm) -5 25 20 -25 -30 15 0 1 2 3 4 5 6 7 8 0 1 2 3 FREQUENCY (GHz) 4 5 6 FREQUENCY (GHz) Input Third Order Intercept Point 60 7 8 55 INPUT IP3 (dBm) RETURN LOSS (dB) 4 FREQUENCY (GHz) SWITCHES - SMT 0 50 45 40 + 25C + 85C - 40C 35 30 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 14 - 89 HMC232C8 v02.1203 MICROWAVE CORPORATION GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz Control Voltages Truth Table Control Input State Bias Condition Low 0 to -0.2V @ 10 uA Max. High -5V @ 10 uA Typ. to -7V @ 45 uA Typ. Absolute Maximum Ratings 14 RF Input Power (Vctl= -5V) (0.5 - 8 GHz) +30 dBm (@ +50 °C) Control Voltage Range (A & B) +1.0V to -7.5 Vdc Channel Temperature 150 °C Thermal Resistance 94 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Signal Path State A B RFC to RF1 RFC to RF2 High Low ON OFF Low High OFF ON Caution: Do not “Hot Switch” power levels greater than +26 dBm (Vctl = 0/-5 Vdc). SWITCHES - SMT Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: WHITE ALUMINA 92% 2. LEAD, PACKAGE BOTTOM MATERIAL: COPPER 3. PLATING: ELECTROLYTIC GOLD 100-200 MICROINCHES, OVER ELECTROLYTIC NICKEL 100-250 MICROINCHES. 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. PACKAGE LENGTH AND WIDTH DIMENSIONS DO NOT INCLUDE LID SEAL PROTRUSION .005 PER SIDE. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 14 - 90 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC232C8 v02.1203 MICROWAVE CORPORATION GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz Suggested Driver Circuit Pin Descriptions Function Description 1, 4, 7 RF1, RF2, RFC This pin is DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V. 2, 3, 8 GND Package bottom must also be connected to PCB RF ground. 5 A See truth table and control voltage table. 6 B See truth table and control voltage table. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 14 SWITCHES - SMT Pin Number 14 - 91 v02.1203 MICROWAVE CORPORATION HMC232C8 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz Evaluation PCB SWITCHES - SMT 14 List of Material Item Description J1 - J3 PC Mount SMA RF Connector J4 - J6 DC Pin R1, R2 100 Ohm Resistor, 0603 Pkg. U1 HMC232C8 SPDT Switch PCB* 107112 Evaluation PCB The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. * Circuit Board Material: Rogers 4350 14 - 92 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.1203 MICROWAVE CORPORATION HMC232C8 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz Notes: SWITCHES - SMT 14 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 14 - 93