HITTITE HMC232C8

HMC232C8
v02.1203
MICROWAVE CORPORATION
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
Typical Applications
Features
The HMC232C8 is ideal for:
Isolation: 55 dB @ 2.0 GHz
43 dB @ 6.0 GHz
• Telecom Infrastructure
Insertion Loss: 1.6 dB Typical @ 6.0 GHz
• Microwave Radio & VSAT
Non-Reflective Design
• Military Radios, Radar & ECM
Surface Mount Ceramic Package
• Test Instrumentation
Direct Replacement for HMC132C8
General Description
Functional Diagram
The HMC232C8 is a broadband high isolation
non-reflective GaAs MESFET SPDT switch in a
non-hermetic surface mount ceramic package.
Covering DC to 8.0 GHz, the switch features >55
dB isolation up to 2 GHz and >42 dB isolation
up to 8.0 GHz. The switch operates using
complementary negative control voltage logic
lines of -5/0V and requires no bias supply. This
product is a form, fit & functional replacement for
the HMC132C8.
SWITCHES - SMT
14
14 - 88
Electrical Specifications, TA = +25° C, With 0/-5V Control, 50 Ohm System
Parameter
Frequency
Min.
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
Insertion Loss
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
Isolation
50
38
37
Typ.
Max.
Units
1.2
1.6
2.2
1.5
2.0
2.8
dB
dB
dB
55
43
42
dB
dB
dB
Return Loss
“On State”
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
19
12
10
dB
dB
dB
Return Loss RF1, RF2
“Off State”
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
13
8
7
dB
dB
dB
Input Power for 1 dB Compression
0.5 - 8.0 GHz
22
26
dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
0.5 - 8.0 GHz
40
46
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 8.0 GHz
3
5
ns
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HMC232C8
v02.1203
MICROWAVE CORPORATION
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
GaAs
MMIC
Insertion
Loss
SUB-HARMONICALLY Isolation
PUMPED MIXER 17 - 25 GHz
0
0
-10
ISOLATION (dB)
INSERTION LOSS (dB)
-1
-2
-3
+ 25C
+ 85C
- 40C
-4
RF1
RF2
-20
-30
-40
-50
-60
-5
-70
1
2
3
4
5
6
7
0
8
1
2
3
FREQUENCY (GHz)
Return Loss
5
6
7
8
0.1 and 1 dB Input Compression Point
35
0
RFC
RF1, RF2 ON
RF1, RF2 OFF
-10
-15
-20
14
1 dB Compression Point
0.1 dB Compression Point
30
INPUT P1dB (dBm)
-5
25
20
-25
-30
15
0
1
2
3
4
5
6
7
8
0
1
2
3
FREQUENCY (GHz)
4
5
6
FREQUENCY (GHz)
Input Third Order Intercept Point
60
7
8
55
INPUT IP3 (dBm)
RETURN LOSS (dB)
4
FREQUENCY (GHz)
SWITCHES - SMT
0
50
45
40
+ 25C
+ 85C
- 40C
35
30
0
1
2
3
4
5
FREQUENCY (GHz)
6
7
8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14 - 89
HMC232C8
v02.1203
MICROWAVE CORPORATION
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
Control Voltages
Truth Table
Control Input
State
Bias Condition
Low
0 to -0.2V @ 10 uA Max.
High
-5V @ 10 uA Typ. to -7V @ 45 uA Typ.
Absolute Maximum Ratings
14
RF Input Power (Vctl= -5V)
(0.5 - 8 GHz)
+30 dBm (@ +50 °C)
Control Voltage Range (A & B)
+1.0V to -7.5 Vdc
Channel Temperature
150 °C
Thermal Resistance
94 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Signal Path State
A
B
RFC to RF1
RFC to RF2
High
Low
ON
OFF
Low
High
OFF
ON
Caution: Do not “Hot Switch” power levels greater than
+26 dBm (Vctl = 0/-5 Vdc).
SWITCHES - SMT
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: WHITE ALUMINA 92%
2. LEAD, PACKAGE BOTTOM MATERIAL: COPPER
3. PLATING: ELECTROLYTIC GOLD 100-200 MICROINCHES, OVER
ELECTROLYTIC NICKEL 100-250 MICROINCHES.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. PACKAGE LENGTH AND WIDTH DIMENSIONS DO NOT INCLUDE LID
SEAL PROTRUSION .005 PER SIDE.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
14 - 90
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HMC232C8
v02.1203
MICROWAVE CORPORATION
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
Suggested Driver Circuit
Pin Descriptions
Function
Description
1, 4, 7
RF1, RF2, RFC
This pin is DC coupled and matched to 50 Ohm. Blocking
capacitors are required if RF line potential is not equal to 0V.
2, 3, 8
GND
Package bottom must also
be connected to PCB RF ground.
5
A
See truth table and control voltage table.
6
B
See truth table and control voltage table.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
Pin Number
14 - 91
v02.1203
MICROWAVE CORPORATION
HMC232C8
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
Evaluation PCB
SWITCHES - SMT
14
List of Material
Item
Description
J1 - J3
PC Mount SMA RF Connector
J4 - J6
DC Pin
R1, R2
100 Ohm Resistor, 0603 Pkg.
U1
HMC232C8 SPDT Switch
PCB*
107112 Evaluation PCB
The circuit board used in the final application should be
generated with proper RF circuit design techniques. Signal
lines at the RF port should have 50 ohm impedance and
the package ground leads and package bottom should be
connected directly to the ground plane similar to that shown
above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request.
* Circuit Board Material: Rogers 4350
14 - 92
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
v02.1203
MICROWAVE CORPORATION
HMC232C8
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
Notes:
SWITCHES - SMT
14
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14 - 93