MICROWAVE CORPORATION HMC199MS8 v03.0404 DUAL SPDT SWITCH DC - 2.5 GHz Typical Applications Features The HMC199MS8 is ideal for: Integrated Dual SPDTs • Cellular Low Insertion Loss: <0.5 dB @ 2.0 GHz • ISM Basestations Positive Control: 0/+5V • PCS Ultra Small MSOP8 Package: 14.8 mm2 Functional Diagram General Description The HMC199MS8 is a low-cost dual SPDT GaAs “bypass” switch in an 8-lead MSOP package covering DC to 2.5 GHz. This four RF port component integrates two SPDT switches and a through line onto a single IC. The design provides low insertion loss of less than 0.5 dB while switching passive or active external circuit components in and out of the signal path. Port to port isolations are typically 25 to 30 dB. On-chip circuitry enables positive voltage control operation at very low DC currents with control inputs compatible with CMOS and most TTL logic families. Applications include LNA or filter bypass switching and single bit attenuator switching. SWITCHES - SMT 14 Electrical Specifications, TA = +25° C, Vctl = 0/+5 Vdc, 50 Ohm System Parameter Min. Typ. Max. Units 0.3 0.5 0.7 0.6 0.8 1.0 dB dB dB Insertion Loss DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz Isolation DC - 2.0 GHz DC - 2.5 GHz 22 17 25 21 dB dB Return Loss (On State, Any Port) DC - 2.0 GHz DC - 2.5 GHz 17 12 20 15 dB dB Input Power for 1 dB Compression 0.5 - 2.0 GHz 19 23 dBm Input Third Order Intercept (Two-tone Input Power = 0 dBm Each Tone) 0.5 - 2.0 GHz 32 36 dBm Switching Characteristics DC - 2.5 GHz 20 40 ns ns tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 14 - 60 Frequency For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC199MS8 v03.0404 DUAL SPDT SWITCH DC - 2.5 GHz SUB-HARMONICALLY Isolation PUMPED MIXER 17 - 25 GHz 0 0 -0.5 -10 -1 -20 ISOLATION (dB) -1.5 -2 +25 C -30 -40 RFC1 to RFC2 RFC1 to RF1 RFC2 to RF2 +85 C -2.5 -50 -40 C -3 -60 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) 0 0.5 1 1.5 2 14 0 RETURN LOSS (dB) RFC1 RFC2 RF1 RF2 -10 -15 -20 -25 -30 -35 -40 0 0.5 3 Note: Isolation between RF1 - RF2 (when RFC1 RFC2 is in insertion loss state) is 25 dB @ 1 GHz and 17 dB @ 2 GHz. Return Loss -5 2.5 FREQUENCY (GHz) 1 1.5 2 2.5 3 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com SWITCHES - SMT INSERTION LOSS (dB) GaAs MMIC Insertion Loss 14 - 61 HMC199MS8 v03.0404 MICROWAVE CORPORATION DUAL SPDT SWITCH DC - 2.5 GHz Compression vs. Frequency Carrier at 900MHz Distortion vs Frequency Carrier at 1900MHz Control Input CTL Input Input Power for 0.1 dB Compression Input Power for 1.0 dB Compression Input Power for 0.1 dB Compression Input Power for 1.0 dB Compression (Vdc) (dBm) (dBm) (dBm) (dBm) +5 20 23.5 19 22 Input Third Order Intercept (dBm) 0 dBm Each Tone (Vdc) 900 MHz 1900 MHz +5 34.5 37.5 Caution: Do not operate continuously at RF power input greater than 1 dB compression and do not “hot switch” power levels greater than +13 dBm (Control = 0/+5Vdc). Truth Table *Control Input Tolerances are +/- 0.5 Vdc SWITCHES - SMT 14 14 - 62 Control Current (Typical) Control Input* Signal Path A (Vdc) B (Vdc) Ia (uA) Ib (uA) RFC1 to RFC2 RFC1 to RF1 RFC2 to RF2 0 +5 -65 65 ON OFF OFF +5 0 65 -65 OFF ON ON DC blocking capacitors are required at ports RFC1, RFC2, RF1, RF2. Choose value for lowest frequency of operation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC199MS8 v03.0404 DUAL SPDT SWITCH DC - 2.5 GHz Absolute Maximum Ratings RF Input Power VCTL = 0/+5V Control Voltage Range (A & B) Channel Temperature +24 dBm -0.5 to +7.5 Vdc 150 °C Thermal Resistance 172 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED SWITCHES - SMT 14 PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 14 - 63 MICROWAVE CORPORATION v03.0404 HMC199MS8 DUAL SPDT SWITCH DC - 2.5 GHz Eval Board Layout (Top View) *R1 & R2 = 100 Ohm. These optional resistors will provide more RF path to control circuit isolation. SWITCHES - SMT 14 The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF ports should have 50 ohm impedance. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. List of Material Item Description J1 - J4 PC Mount SMA RF Connector J5 - J8 DC Pin C1 - C4 Chip Capacitor, 0402 Pkg. Choose value for lowest frequency of operation. 330 pF is provided on PCB. R1 - R2 100 Ohm Resistor, 0402 Pkg. U1 HMC199MS8 Bypass Switch PCB* 103234 Evaluation PCB 1.5” x 1.5” * Circuit Board Material: Rogers 4350 14 - 64 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v03.0404 HMC199MS8 DUAL SPDT SWITCH DC - 2.5 GHz Typical Application Circuit 14 1. Set A/B control to 0/+5V, Vdd = +5V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd = 5 to 7 Volts applied to the CMOS logic gates. 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with Vdd = +7V and A/B set to 0/+7V. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com SWITCHES - SMT Notes: 14 - 65