bq24600 www.ti.com SLUS891 – FEBRUARY 2010 Stand-Alone Synchronous Switch-Mode Li-Ion or Li-Polymer Battery Charger with Low Iq Check for Samples: bq24600 FEATURES APPLICATIONS • • 1 • • • • • • • • • • • • • • Netbook, Mobile Internet Device, and Ultra-Mobile PC Personal Digital Assistants Handheld Terminals Industrial and Medical Equipment Portable Equipment DESCRIPTION The bq24600 is highly integrated Li-ion or Li-polymer switch-mode battery charge controller. It offers a constant-frequency synchronous PWM controller with high accuracy charge current and voltage regulation, charge preconditioning, termination, and charge status monitoring, The bq24600 charges the battery in three phases: preconditioning, constant current, and constant voltage. Charge is terminated when the current reaches a minimum level. An internal charge timer provides a safety backup. The bq24600 automatically restarts the charge cycle if the battery voltage falls below an internal threshold, and enters a low-quiescent current sleep mode when the input voltage falls below the battery voltage. PACKAGE AND PIN-OUT OAQ (bq24600) QFN-16 TOP VIEW PG • • 1.2 MHz NMOS-NMOS Synchronous Buck Converter Stand-alone Charger Support for Li-Ion or Li-Polymer 5V-28V VCC Input Voltage Range and Support 1-6 Battery Cells Up to 10A Charge Current and Adapter Current High-Accuracy Voltage and Current Regulation – ±0.5% Charge Voltage Accuracy – ±3% Charge Current Accuracy Integration – Internal Loop Compensation – Internal Soft Start Safety – Input Over-Voltage Protection – Battery Thermistor Sense Hot/Cold Charge Suspend – Battery Detection – Built-in Safety Timer – Charge Over-Current Protection – Battery Short Protection – Battery Over-Voltage Protection – Thermal Shutdown Status Outputs – Adapter Present – Charger Operation Status Charge Enable Pin 6V Gate Drive for Synchoronous Power Converter 30ns Driver Dead-time and 99.5% Max Effective Duty Cycle 16-pin 3.5×3.5 mm2 QFN package Energy Star Low Quiescent Current Iq – < 15 mA Off-State Battery Discharge current – < 1.5 mA Off-State Input Quiescent Current 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2010, Texas Instruments Incorporated bq24600 SLUS891 – FEBRUARY 2010 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. TYPICAL APPLICATION ADAPTER + D2 MBRS540T3 VREF VCC HIDRV ISET BTST C7 1 µF R7 100 kW PH R8 22.1 kW REGN VREF D1 BAT54 C6 0.1 µF bq24600 D3 ADAPTER + LODRV STAT D4 PG TS R10 430 kW C13 C12 10 µF* 10 µF* C11 0.1 µF R2 900 kW 0.1 μF Cff 22 pF R1 100 kW SRN R5 100 W PACK+ PACK- SRP VREF R9 9.31 kW VBAT 3.3 µH* C10 0.1 µF GND R14 10 kW RSR 0.010 Ω Q5 SiR426 CE R13 10 kW Q4 SiR426 L1 C5 1 µF C4 1 µF Pack Thermistor Sense C9 10 µF N C2 2.2 µF C8 10 µF R6 10 W N R11 2 kW ADAPTER - VFB PwrPad VIN = 28 V, BAT = 5-cell Li-Ion, Icharge = 3 A, Ipre-charge = Iterm = 0.3 A Figure 1. Typical System Schematic ORDERING INFORMATION PART NUMBER IC MARKING PACKAGE ODERING NUMBER (Tape and Reel) QUANTITY bq24600 OAQ 16-PIN 3.5x3.5 mm QFN bq24600RVAR 3000 bq24600RVAT 250 PACKAGE THERMAL DATA PACKAGE QFN – RVA (1) (2) 2 (1) (2) qJP qJA TA = 25°C POWER RATING DERATING FACTOR ABOVE TA = 25°C 4 °C/W 43.8 °C/W 2.28 W 0.0228 W/°C For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI Web site at www.ti.com. This data is based on using the JEDEC High-K board and the exposed die pad is connected to a Cu pad on the board. This is connected to the ground plane by a 2x2 via matrix. qJA has 5% improvement by 3x3 via matrix. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 bq24600 www.ti.com SLUS891 – FEBRUARY 2010 ABSOLUTE MAXIMUM RATINGS (1) (2) (3) over operating free-air temperature range (unless otherwise noted) VALUE / UNIT –0.3 to 33 V PH –2 to 36 V VFB –0.3 to 16 V REGN, LODRV, TS –0.3 to 7 V BTST, HIDRV with respect to GND –0.3 to 39 V VREF, ISET –0.3 to 3.6 V VCC, SRP, SRN, CE, STAT, PG Voltage range Maximum difference voltage SRP–SRN –0.5 to 0.5 V Junction temperature range, TJ –40 to 155 ºC Storage temperature range, Tstg –55 to 155 ºC (1) (2) (3) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages are with respect to GND if not specified. Currents are positive into, negative out of the specified terminal. Consult Packaging Section of the data book for thermal limitations and considerations of packages. Must have a series resistor between battery pack to VFB if Battery Pack voltage is expected to be greater than 16V. Usually the resistor divider top resistor will take care of this. RECOMMENDED OPERATING CONDITIONS VALUE UNIT –0.3 to 28 V PH –2 to 30 V VFB –0.3 to 14 V REGN, LODRV, TS –0.3 to 6.5 V BTST, HIDRV with respect to GND –0.3 to 34 V ISET –0.3 to 3.3 V VREF 3.3 V –0.2 to 0.2 V Junction temperature range, TJ 0 to 125 ºC Storage temperature range, Tstg –55 to 155 ºC VCC, SRP, SRN, CE, STAT, PG Voltage range Maximum difference voltage SRP–SRN ELECTRICAL CHARACTERISTICS 5.0V ≤ V(VCC) ≤ 28V, 0°C < TJ < +125°C, typical values are at TA = 25°C, with respect to GND (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 28.0 V 15 mA OPERATING CONDITIONS VVCC_OP VCC Input voltage operating range 5.0 QUIESCENT CURRENTS IBAT Total battery discharge current (sum of currents into VCC, BTST, PH, SRP, SRN, VFB), VFB ≤2.1 V IAC Adapter supply current (current into VCC pin) VVCC < VSRN, VVCC > VUVLO (SLEEP) VVCC > VSRN, VVCC > VUVLO CE = LOW (IC quiescent current) 1 1.5 VVCC > VSRN, VVCC >VVCCLOW, CE = HIGH, charge done 2 5 VVCC > VSRN, VVCC >VVCCLOW, CE = HIGH, Charging, Qg_total = 20 nC, VVCC=20V mA 50 CHARGE VOLTAGE REGULATION VFB Feedback regulation voltage Charge voltage regulation accuracy IVFB Leakage Current into VFB pin 2.1 V TJ = 0°C to 85°C –0.5% 0.5% TJ = –40°C to 125°C –0.7% 0.7% VFB = 2.1 V 100 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 nA 3 bq24600 SLUS891 – FEBRUARY 2010 www.ti.com ELECTRICAL CHARACTERISTICS (continued) 5.0V ≤ V(VCC) ≤ 28V, 0°C < TJ < +125°C, typical values are at TA = 25°C, with respect to GND (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CURRENT REGULATION – FAST CHARGE VISET ISET voltage range VIREG_CHG SRP-SRN current sense voltage range VIREG_CHG = VSRP – VSRN KISET Charge current set factor (Amps of charge current per volt on ISET pin) RSENSE = 10 mΩ Charge current regulation accuracy IISET Leakage current into ISET pin 2 100 5 V mV A/V VIREG_CHG = 40 mV –3% VIREG_CHG = 20 mV –4% 3% 4% VIREG_CHG = 5 mV –25% 25% VIREG_CHG = 1.5 mV (VSRN > 3.1V) –40% 40% VISET = 2 V 100 nA CURRENT REGULATION – PRECHARGE KPRECH Precharge current range RSENSE = 10 mΩ ICHARGE /10 Precharge current set factor (Amps of precharge current per volt on ISET pin) RSENSE = 10 mΩ 0.5 Precharge current regulation accuracy A A/V VIREG_PRECH = 10 mV –10% 10% VIREG_PRECH = 5 mV –25% 25% VIREG_PRECH = 1.5 mV (VSRN < 3.1V) –55% 55% CHARGE TERMINATION KTERM Termination current range RSENSE = 10 mΩ ICHARGE /10 Termination current set factor (Amps of Termination current per volt on ISET pin) RSENSE = 10 mΩ 0.5 Termination current accuracy A A/V VITERM = 10 mV –10% 10% VITERM = 5 mV –25% 25% VITERM = 1.5 mV –45% Deglitch time for termination (both edge) 45% 100 tQUAL Termination qualification time VBAT > VRECH and ICHARGE < ITERM IQUAL Termination qualification current Discharge current once termination is detected ms 250 ms 2 mA INPUT UNDER-VOLTAGE LOCK-OUT COMPARATOR (UVLO) VUVLO AC under-voltage rising threshold VUVLO_HYS AC under-voltage hysteresis, falling Measure on VCC 3.65 3.85 4 350 V mV VCC LOWV COMPARATOR Falling threshold, disable charge Measure on VCC 4.1 Rising threshold, resume charge V 4.35 4.5 V 100 150 mV SLEEP COMPARATOR (REVERSE DISCHARGING PROTECTION) VSLEEP _FALL VSLEEP_HYS SLEEP falling threshold VVCC – VSRN to enter SLEEP 40 SLEEP hysteresis 500 SLEEP rising delay VCC falling below SRN, delay to pull up PG SLEEP falling delay VCC rising above SRN, delay to pull down PG SLEEP rising shutdown deglitch SLEEP falling powerup deglitch mV 1 µs 30 ms VCC falling below SRN, Delay to enter SLEEP mode 100 ms VCC rising above SRN, Delay to come out of SLEEP mode 30 ms BAT LOWV COMPARATOR VLOWV Precharge to fastcharge transition (LOWV Threshold) VLOWV_HYS LOWV hysteresis 4 Measured on VFB pin 1.534 1.55 1.566 V 100 mV LOWV rising deglitch VFB falling below Vlowv 25 ms LOWV falling deglitch VFB rising above Vlowv + VLOWV_HYS 25 ms Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 bq24600 www.ti.com SLUS891 – FEBRUARY 2010 ELECTRICAL CHARACTERISTICS (continued) 5.0V ≤ V(VCC) ≤ 28V, 0°C < TJ < +125°C, typical values are at TA = 25°C, with respect to GND (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX 35 50 65 UNIT RECHARGE COMPARATOR VRECHG Recharge threshold (with respect to.VREG) Measured on VFB pin Recharge rising deglitch VFB decreasing below VRECHG 10 ms Recharge falling deglitch VFB increasing above VRECHG 10 ms mV BAT OVER-VOLTAGE COMPARATOR VOV_RISE Over-Voltage Rising Threshold As percentage of VFB 104% VOV_FALL Over-Voltage Falling Threshold As percentage of VFB 102% INPUT OVER-VOLTAGE COMPARATOR (ACOV) VACOV AC over-voltage rising threshold on VCC VACOV_HYS AC over-voltage falling hysteresis 1 V VACOV_HYS AC over-voltage rising deglitch 1 ms AC over-voltage falling deglitch 1 ms 145 °C 15 °C 31.04 32 32.96 V THERMAL SHUTDOWN COMPARATOR TSHUT Thermal shutdown rising temperature TSHUT_HYS Thermal shutdown hysteresis Temperature increasing Thermal shutdown rising deglitch Temperature increasing 100 ms Thermal shutdown falling deglitch Temperature decreasing 10 ms THERMISTOR COMPARATOR VLTF Cold temperature rising threshold As percentage to VVREF 72.5% 73.5% VLTF_HYS Rising hysteresis As percentage to VVREF 0.2% 0.4% 74.5% 0.6% VHTF Hot temperature rising threshold As percentage to VVREF 36.2% 37% 37.8% VTCO Cut-off temperature rising threshold As percentage to VVREF 33.7% 34.4% 35.1% Deglitch time for temperature out of range detection VTS > VLTF, or VTS < VTCO, or VTS < VHTF Deglitch time for temperature in valid range detection VTS < VLTF – VLTF_HYS or VTS >VTCO, or VTS > VHTF 400 ms 20 ms 45.5 mV CHARGE OVER-CURRENT COMPARATOR (CYCLE-BY-CYCLE) Charge over-current falling threshold VOC Current rising, in non-synchronous mode, mesure on V(SRP-SRN), VSRP < 2 V Current rising, as percentage of V(IREG_CHG), in synchronous mode, VSRP > 2.2V 160% Charge over-current threshold floor Minimum OCP threshold in synchronous mode, measure on V(SRP-SRN), VSRP > 2.2V 50 mV Charge over-current threshold ceiling Maximum OCP threshold in synchronous mode, measure on V(SRP-SRN), VSRP > 2.2V 180 mV CHARGE UNDER-CURRENT COMPARATOR (CYCLE-BY-CYCLE) VISYNSET Charge under-current falling threshold VSRP>2.2V, Switch from CCM to DCM 1 5 9 mV BATTERY SHORTED COMPARATOR (BATSHORT) VBATSHT BAT Short falling threshold, forced non-syn mode VBATSHT_HYS BAT short rising hysteresis VBATSHT_DEG Deglitch on both edge VSRP falling 2 V 200 mV 1 ms 1.25 mV 1.25 mV 1 ms LOW CHARGE CURRENT COMPARATOR VLC Low charge current (average) falling threshold to force into non-sync mode VLC_HYS Low charge current rising hysteresis VLC_DEG Deglitch on both edge Measure V(SRP-SRN) VREF REGULATOR VVREF_REG VREF regulator voltage VVCC > VUVLO (0 - 35mA load) IVREF_LIM VREF current limit VVREF = 0 V, VVCC > VUVLO 3.267 3.3 3.333 35 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 V mA 5 bq24600 SLUS891 – FEBRUARY 2010 www.ti.com ELECTRICAL CHARACTERISTICS (continued) 5.0V ≤ V(VCC) ≤ 28V, 0°C < TJ < +125°C, typical values are at TA = 25°C, with respect to GND (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX 6.0 6.3 UNIT REGN REGULATOR VREGN_REG REGN regulator voltage VVCC > 10 V, CE = HIGH (0 - 40 mA load) 5.7 IREGN_LIM REGN current limit VREGN = 0 V, VVCC > VUVLO 40 V mA SAFETY TIMER TPRECHG Precharge safety timer range (1) TCHARGE Internal five hour safety timer (1) Precharge time before fault occurs 1440 1800 2160 s 4.25 5 5.75 hr 200 mA BATTERY DETECTION tWAKE Wake timer Max time charge is enabled IWAKE Wake current RSENSE = 10 mΩ 500 tDISCHARGE Discharge timer Max time discharge current is applied IDISCHARGE IFAULT VWAKE Wake threshold ( w.r.t. VREG) Voltage on VFB to detect battery absent during wake VDISCH Discharge threshold Voltage on VFB to detect battery absent during discharge 50 125 ms 1 sec Discharge current 8 mA Fault current after a timeout fault 2 mA 50 mV 1.55 V PWM HIGH SIDE DRIVER (HIDRV) RDS_HI_ON High side driver (HSD) turn-on resistance VBTST – VPH = 5.5 V 3.3 6 Ω RDS_HI_OFF High side driver turn-off resistance VBTST – VPH = 5.5 V 1 1.3 Ω VBTST_REFRESH Bootstrap refresh comparator threshold voltage VBTST – VPH when low side refresh pulse is requested 4.0 4.2 V PWM LOW SIDE DRIVER (LODRV) RDS_LO_ON Low side driver (LSD) turn-on resistance RDS_LO_OFF Low side driver turn-off resistance 4.1 7 Ω 1 1.4 Ω PWM DRIVERS TIMING Driver dead time Dead time when switching between LSD and HSD, no load at LSD and HSD 30 ns PWM OSCILLATOR VRAMP_HEIGHT PWM ramp height As percentage of VCC 7% PWM switching frequency (1) 1020 1200 1380 kHz INTERNAL SOFT START (8 steps to regulation current ICHARGE) Soft Start Steps Soft Start Step Time 8 step 1.6 ms 1.5 s CHARGER SECTION POWER-UP SEQUENCING Charge-enable delay after power-up Delay from when CE = 1 to when the charger is allowed to turn on LOGIC IO PIN CHARACTERISTICS (CE, STAT, PG) VIN_LO CE input low threshold voltage VIN_HI CE input high threshold voltage VBIAS_CE CE input bias current V = 3.3V (CE has internal 1MΩ pulldown resistor) VOUT_LO STAT, PG output low saturation voltage Sink current = 5 mA 0.5 V IOUT_HI Leakage current V = 32 V 1.2 µA (1) 6 0.8 V 6 mA 2.1 Verified by design. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 bq24600 www.ti.com SLUS891 – FEBRUARY 2010 TYPICAL CHARACTERISTICS Table 1. Table of Graphs Figure Figure 2 Charge Enable Figure 3 Current Soft-Start (CE=1) Figure 4 Charge Disable Figure 5 Continuous Conduction Mode Switching Waveforms Figure 6 Cycle-by-Cycle Synchronous to Nonsynchronous Figure 7 Battery Insertion Figure 8 Battery to Ground Short Protection Figure 9 Efficiency vs Output Current Figure 10 10 V/div 10 V/div REF REGN and PG Power Up (CE=1) PH 2 A/div IBAT REGN 5 V/div CE 5 V/div 2 V/div VREF 5 V/div /PG 2 V/div VCC LODRV t − Time = 200 ms/div t − Time = 4 ms/div Figure 3. Charge Enable 10 V/div 10 V/div Figure 2. REF REGN and PG Power Up (CE=1) PH 5 V/div LODRV 2 A/div IBAT 0.2 V/div 5 V/div CE 5 V/div CE 2 A/div PH IL LODRV t − Time = 1 μs/div t − Time = 4 ms/div Figure 4. Current Soft-Start (CE=1) Figure 5. Charge Disable Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 7 bq24600 www.ti.com 5 V/div PH HIDRV 2 A/div 5 V/div LODRV 2 A/div 5 V/div 20 V/div 20 V/div SLUS891 – FEBRUARY 2010 IL PH LODRV IL t − Time = 40 ns/div t − Time = 40 ns/div Figure 7. Cycle-by-Cycle Synchronous to Nonsynchronous 10 V/div 10 V/div Figure 6. Continuous Conduction Mode Switching Waveform PH 2 A/div LODRV IL IL 20 V/div 2 A/div 5 V/div 5 V/div PH VBAT VBAT t − Time = 200 ms/div t − Time = 4 ms/div Figure 8. Battery Insertion Figure 9. Battery to GND Short Protection 105 Efficiency - % 100 28 Vin, 6 cell 24 Vin, 5 cell 95 90 20 Vin, 4 cell 20 Vin, 3 cell 85 12 Vin, 2 cell 12 Vin, 1 cell 80 0 1 2 5 4 3 IBAT - Output Current - A 6 7 8 Figure 10. Efficiency vs Output Current 8 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 bq24600 www.ti.com SLUS891 – FEBRUARY 2010 BLOCK DIAGRAM bq24600 VCC - SRN+100mV + VCC - VUVLO + SLEEP 3.3V LDO UVLO VCC VREF VREF INTERNAL REFERENCE CE 1M COMP ERROR AMPLIFIER BTST CE PWM - VFB + + 1V LEVEL SHIFTER + - 2.1 V HIDRV BAT_OVP 20uA SRP SRP-SRN + SYNCH PH 20xV(SRP-SRN) + IBAT_ REG SRN VCC CE - + 20X - PWM CONTROL LOGIC + 5 mV - BTST _+ PH 20μA REFRESH - 6V LDO ENA_BIAS 4.2V FAULT CHG_OCP CHARGE - 160% X IBAT_REG 2mA LODRV + V(SRP-SRN) REGN + GND 8mA Safety Timer CHARGE DISCHARGE FAULT IC Tj + 145degC + BAT_OVP STATE MACHINE LOGIC - 104% X VBAT_REG ISET IBAT_ REG ISET 10 LOWV VFB - LOWV VCC + 1.55V +- STAT STAT BAT ISET TSHUT + BATTERY DETECTION LOGIC PG PG DISCHARGE VREF ACOV LTF VACOV +- + TS VFB - SUSPEND HTF RCHRG + - + 2.05 V +RCHRG - bq24600 ISET 10 TERM TCO + - TERM + 20xV(SRP-SRN) TERMINATE CHARGE Figure 11. Functional Block Diagram for bq24600 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 9 bq24600 SLUS891 – FEBRUARY 2010 www.ti.com OPERATIONAL FLOWCHART POR SLEEP MODE VCC > SRN No Indicate SLEEP Yes Enable VREF LDO & Chip Bias Indicate battery absent Initiate battery detect algorithm Battery present? No See Enabling and Disabling Charge Section Yes Conditions met for charge? Indicate NOT CHARGING, Suspend timers No No Conditions met for charge? No Yes Yes Regulate precharge current VFB < VLOWV Start 30 minute precharge timer Yes Indicate ChargeIn-Progress Start Fastcharge timer No Indicate NOT CHARGING, Suspend timers VFB < VLOWV Yes No Regulate fastcharge current No Conditions met for charge? Yes Precharge timer expired? Yes Indicate ChargeIn-Progress No Turn off charge, Enable IDISCHG for 1 second Yes Indicate Charge In Progress VFB > VRECH & ICHG < ITERM FAULT Enable IFAULT No Fastcharge Timer Expired? Yes Indicate FAULT No Charge Complete VFB > VRECH VFB < VRECH No Yes Indicate DONE Battery Removed Yes Indicate BATTERY ABSENT Figure 12. Operational Flowchart for bq24600 10 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 bq24600 www.ti.com SLUS891 – FEBRUARY 2010 PIN FUNCTIONS PIN NO. FUNCTION DESCRIPTION NAME 1 VCC IC power positive supply. Connect, through a 10 Ω resistor to the common-source (diode-OR) point: source of high-side P-channel MOSFET and source of reverse-blocking power P-channel MOSFET. Or connect through a 10 Ω resistor to the cathode of the input diode. Place a 1-mF ceramic capacitor from VCC to GND pin close to the IC. 2 CE Charge-enable active-HIGH logic input. HI enables charge. LO disables charge. It has an internal 1MΩ pull-down resistor. 3 STAT Open-drain charge status pin to indicate various charger operation (See Table 3) 4 TS Temperature qualification voltage input for battery pack negative temperature coefficient thermistor. Program the hot and cold temperature window with a resistor divider from VREF to TS to GND. 5 PG Open-drain power-good status output. The transistor turns on when a valid VCC is detected. It is turned off in the sleep mode. PG can be used to drive a LED or communicate with a host processor. It can be used to drive ACFET and BATFET. 6 VREF 3.3V regulated voltage output. Place a 1-mF ceramic capacitor from VREF to GND pin close to the IC. This voltage could be used for programming of voltage and current regulation and for programming the TS threshold. 7 ISET Charge current set input. The voltage of ISET pin programs the charge current regulation, pre-charge current and termination current set-point. 8 VFB Output voltage analog feedback adjustment. Connect the output of a resistive voltage divider from the battery terminals to this node to adjust the output battery regulation voltage. 9 SRN Charge current sense resistor, negative input. A 0.1-mF ceramic capacitor is placed from SRN to SRP to provide differential-mode filtering. An optional 0.1-mF ceramic capacitor is placed from SRN pin to GND for common-mode filtering. 10 SRP Charge current sense resistor, positive input. A 0.1-mF ceramic capacitor is placed from SRN to SRP to provide differential-mode filtering. A 0.1-mF ceramic capacitor is placed from SRP pin to GND for common-mode filtering. 11 GND Low-current sensitive analog/digital ground. On PCB layout, connect with PowerPad underneath the IC. 12 REGN PWM low side driver positive 6V supply output. Connect a 1-mF ceramic capacitor from REGN to PGND pin, close to the IC. Use for low side driver and high-side driver bootstrap voltage by connecting a small signal Schottky diode from REGN to BTST. 13 LODRV PWM low side driver output. Connect to the gate of the low-side power MOSFET with a short trace. 14 PH PWM high side driver negative supply. Connect to the Phase switching node (junction of the low-side power MOSFET drain, high-side power MOSFET source, and output inductor). Connect the 0.1mF bootstrap capacitor from PH to BTST. 15 HIDRV PWM high side driver output. Connect to the gate of the high-side power MOSFET with a short trace. 16 BTST PWM high side driver negative supply. Connect to the Phase switching node (junction of the low-side power MOSFET drain, high-side power MOSFET source, and output inductor). Connect the 0.1mF bootstrap capacitor from SW to BTST PowerPad Exposed pad beneath the IC. Always solder PowerPad to the board, and have vias on the PowerPad plane star-connecting to GND and ground plane for high-current power converter. It also serves as a thermal pad to dissipate the heat. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 11 bq24600 SLUS891 – FEBRUARY 2010 www.ti.com DETAILED DESCRIPTION Regulation Voltage VRECH Regulation Current Precharge Current Regulation Phase Fastcharge Current Regulation Phase Fastcharge Voltage Regulation Phase Termination Charge Current Charge Voltage VLOWV IPRECH & ITERM Precharge Time Fastcharge Safety Time Figure 13. Typical Charging Profile Battery Voltage Regulation The bq24600 uses a high accuracy voltage bandgap and regulator for the high accuracy charging voltage. The charge voltage is programmed via a resistor divider from the battery to ground, with the midpoint tied to the VFB pin. The voltage at the VFB pin is regulated to 2.1V, giving the following equation for the regulation voltage: é R2 ù VBAT = 2.1 V ´ ê1+ ú ë R1 û (1) where R2 is connected from VFB to the battery and R1 is connected from VFB to GND Battery Current Regulation The ISET input sets the maximum charging current. Battery current is sensed by resistor RSR connected between SRP and SRN. The full-scale differential voltage between SRP and SRN is 100mV. Thus, for a 10mΩ sense resistor, the maximum charging current is 10A. The equation for charge current is: VISET ICHARGE = 20 ´ RSR (2) VISET, The input voltage range of ISET is between 0 and 2V. The SRP and SRN pins are used to sense voltage across RSR with default value of 10mΩ. However, resistors of other values can also be used. A larger sense resistor will give a larger sense voltage, a higher regulation accuracy; but, at the expense of higher conduction loss. 12 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 bq24600 www.ti.com SLUS891 – FEBRUARY 2010 Precharge On power-up, if the battery voltage is below the VLOWV threshold, the bq24600 applies the precharge current to the battery. This feature is intended to revive deeply discharged cells. If the VLOWV threshold is not reached within 30 minutes of initiating precharge, the charger turns off and a FAULT is indicated on the status pins. The precharge current is fixed 1/10th of the programmed charge current, which is determined by the voltage on the ISET pin according Equation 3: I VISET IPRECHARGE = CHARGE = 10 200 ´ RSR (3) The minimum precharge current is clamped to be around 125mA with default 10mΩ sensing resistor. Charge Termination, Recharge, and Safety Timer The bq24600 monitors the charging current during the voltage regulation phase. Termination is detected while the voltage on the VFB pin is higher than the VRECH threshold AND the charge current is less than the ITERM threshold, which is is fixed 1/10th of the programmed charge current, as calculated in Equation 4: VISET ITERM = 200 ´ RSR (4) As a safety backup, the bq24600 also provides an internal 5 hour safety timer for fast charge. A • • • new charge cycle is initiated and safety timer is reset when one of the following conditions occur: The battery voltage falls below the recharge threshold A power-on-reset (POR) event occurs CE is toggled Power Up The bq24600 uses a SLEEP comparator to determine the source of power on the VCC pin, since VCC can be supplied either from the battery or the adapter. If the VCC voltage is greater than the SRN voltage, bq24600 exits the SLEEP mode. If all other conditions are met for charging, bq24600 will then attempt to charge the battery (See Enabling and Disabling Charging). If the SRN voltage is greater than VCC, bq24600 enters a low quiescent current (<15mA) SLEEP mode to minimize current drain from the battery. If VCC is below the UVLO threshold, the device is disabled. Enable and Disable Charging The following conditions have to be valid before charge is enabled: • CE is HIGH • The device is not in VCCLOWV mode • The device is not in SLEEP mode • The VCC voltage is lower than the AC over-voltage threshold (VCC < VACOV) • 30ms delay is complete after initial power-up • The REGN LDO and VREF LDO voltages are at the correct levels • Thermal Shut (TSHUT) is not valid • TS fault is not detected One of the following conditions will stop on-going charging: • CE is LOW; • Adapter is removed, causing the device to enter VCCLOWV or SLEEP mode; • Adapter is over voltage; • The REGN or VREF LDOs are overloaded; • TSHUT IC temperature threshold is reached (145°C on rising-edge with 15°C hysteresis). • TS voltage goes out of range indicating the battery temperature is too hot or too cold Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 13 bq24600 SLUS891 – FEBRUARY 2010 www.ti.com Automatic Internal Soft-Start Charger Current The charger automatically soft-starts the charger regulation current every time the charger goes into fast-charge to ensure there is no overshoot or stress on the output capacitors or the power converter. The soft-start consists of stepping-up the charge regulation current into 8 evenly divided steps up to the programmed charge current. Each step lasts around 1.6ms, for a typical rise time of 12.8ms. No external components are needed for this function. Converter Operation The synchronous buck PWM converter uses a fixed frequency voltage mode with feed-forward control scheme. A type III compensation network allows using ceramic capacitors at the output of the converter. The compensation input stage is connected internally between the feedback output (FBO) and the error amplifier input (EAI). The feedback compensation stage is connected between the error amplifier input (EAI) and error amplifier output (EAO). The LC output filter is selected to give a resonant frequency of 17 kHz – 25 kHz for bq24600, where resonant frequency, fo, is given by Equation 5: 1 fo = 2p Lo Co (5) An internal saw-tooth ramp is compared to the internal EAO error control signal to vary the duty-cycle of the converter. The ramp height is 7% of the input adapter voltage making it always directly proportional to the input adapter voltage. This cancels out any loop gain variation due to a change in input voltage, and simplifies the loop compensation. The ramp is offset by 300mV in order to allow zero percent duty-cycle when the EAO signal is below the ramp. The EAO signal is also allowed to exceed the saw-tooth ramp signal in order to get a 100% duty-cycle PWM request. Internal gate drive logic allows achieving 99.5% duty-cycle while ensuring the N-channel upper device always has enough voltage to stay fully on. If the BTST pin to PH pin voltage falls below 4.2V for more than 3 cycles, then the high-side n-channel power MOSFET is turned off and the low-side n-channel power MOSFET is turned on to pull the PH node down and recharge the BTST capacitor. Then the high-side driver returns to 100% duty-cycle operation until the (BTST-PH) voltage is detected to fall low again due to leakage current discharging the BTST capacitor below the 4.2 V, and the reset pulse is reissued. The fixed frequency oscillator keeps tight control of the switching frequency under all conditions of input voltage, battery voltage, charge current, and temperature, simplifying output filter design and keeping it out of the audible noise region. Synchronous and Non-Synchronous Operation The charger operates in synchronous mode when the SRP-SRN voltage is above 5mV (0.5A inductor current for a 10mΩ sense resistor). During synchronous mode, the internal gate drive logic ensures there is break-before-make complimentary switching to prevent shoot-through currents. During the 30ns dead time where both FETs are off, the body-diode of the low-side power MOSFET conducts the inductor current. Having the low-side FET turn-on keeps the power dissipation low, and allows safely charging at high currents. During synchronous mode the inductor current is always flowing and converter operates in continuous conduction mode (CCM), creating a fixed two-pole system. The charger operates in non-synchronous mode when the SRP-SRN voltage is below 5mV (0.5A inductor current for a 10mΩ sense resistor). The charger is forced into non-synchronous mode when battery voltage is lower than 2V or when the average SRP-SRN voltage is lower than 1.25mV. During non-synchronous operation, the body-diode of lower-side MOSFET can conduct the positive inductor current after the high-side n-channel power MOSFET turns off. When the load current decreases and the inductor current drops to zero, the body diode will be naturally turned off and the inductor current will become discontinuous. This mode is called Discontinuous Conduction Mode (DCM). During DCM, the low-side n-channel power MOSFET will turn-on for around 80ns when the bootstrap capacitor voltage drops below 4.2V, then the low-side power MOSFET will turn-off and stay off until the beginning of the next cycle, where the high-side power MOSFET is turned on again. The 80ns low-side MOSFET on-time is required to ensure the bootstrap capacitor is always recharged and able to keep the high-side power MOSFET on during the next cycle. This is important for battery chargers, where unlike regular dc-dc converters, there is a battery load that maintains a voltage and can both source and sink current. The 80ns low-side pulse pulls the PH node (connection between high and low-side MOSFET) down, allowing the bootstrap capacitor to recharge up to the REGN LDO value. After the 80ns, the low-side MOSFET is kept off to prevent negative inductor current from occurring. 14 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 bq24600 www.ti.com SLUS891 – FEBRUARY 2010 At very low currents during non-synchronous operation, there may be a small amount of negative inductor current during the 80ns recharge pulse. The charge should be low enough to be absorbed by the input capacitance. Whenever the converter goes into zero percent duty-cycle, the high-side MOSFET does not turn on, and the low-side MOSFET does not turn on (only 80ns recharge pulse) either, and there is almost no discharge from the battery. During the DCM mode the loop response automatically changes and has a single pole system at which the pole is proportional to the load current, because the converter does not sink current, and only the load provides a current sink. This means at very low currents the loop response is slower, as there is less sinking current available to discharge the output voltage. Cycle-by-Cycle Charge Under Current Protection If the SRP-SRN voltage decreases below 5mV (The charger is also forced into non-synchronous mode when the average SRP-SRN voltage is lower than 1.25mV), the low side FET will be turned off for the remainder of the switching cycle to prevent negative inductor current. During DCM, the low-side FET will only turn on for at around 80ns when the bootstrap capacitor voltage drops below 4.2V to provide refresh charge for the bootstrap capacitor. This is important to prevent negative inductor current from causing a boost effect in which the input voltage increases as power is transferred from the battery to the input capacitors and lead to an over-voltage stress on the VCC node and potentially cause damage to the system. Input Over-Voltage Protection (ACOV) ACOV provides protection to prevent system damage due to high input voltage. Once the adapter voltage reaches the ACOV threshold, charge is disabled and the system is switched to battery instead of adapter. Input Under-Voltage-Lock-Out (UVLO) The system must have a minimum VCC voltage to allow proper operation. This VCC voltage could come from either input adapter or battery, if a conduction path exists from the battery to VCC through the high side NMOS body diode. When VCC is below the UVLO threshold, all circuits in the IC are disabled. Battery Over-Voltage Protection The converter will not allow the high-side FET to turn-on until the BAT voltage goes below 102% of the regulation voltage. This allows one-cycle response to an over-voltage condition – such as occurs when the load is removed or the battery is disconnected. An 8mA current sink from SRP/SRN to GND is on only during charge and allows discharging the stored output inductor energy that is transferred to the output capacitors. Cycle-by-Cycle Charge Over-Current Protection The charger has a secondary cycle-to-cycle over-current protection. It monitors the charge current, and prevents the current from exceeding 160% of the programmed charge current. The high-side gate drive turns off when the over-current is detected, and automatically resumes when the current falls below the over-current threshold. Thermal Shutdown Protection The QFN package has low thermal impedance, which provides good thermal conduction from the silicon to the ambient, to keep junctions temperatures low. As added level of protection, the charger converter turns off and self-protects whenever the junction temperature exceeds the TSHUT threshold of 145°C. The charger stays off until the junction temperature falls below 130°C, then the charger will soft-start again if all other enable charge conditions are valid. Thermal shutdown will also suspend the safety timer. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 15 bq24600 SLUS891 – FEBRUARY 2010 www.ti.com Temperature Qualification The controller continuously monitors battery temperature by measuring the voltage between the TS pin and GND. A negative temperature coefficient thermistor (NTC) and an external voltage divider typically develop this voltage. The controller compares this voltage against its internal thresholds to determine if charging is allowed. To initiate a charge cycle, the battery temperature must be within the V(LTF) to V(HTF) thresholds. If battery temperature is outside of this range, the controller suspends charge, safety timer and waits until the battery temperature is within the V(LTF) to V(HTF) range. During the charge cycle the battery temperature must be within the V(LTF) to V(TCO) thresholds. If battery temperature is outside of this range, the controller suspends charge, safety timer and waits until the battery temperature is within the V(LTF) to V(HTF) range. The controller suspends charge by turning off the PWM charge FETs. Figure 14 summarizes the operation. VREF VREF CHARGE SUSPENDED CHARGE SUSPENDED VLTF VLTFH VLTF VLTFH TEMPERATURE RANGE TO INITIATE CHARGE TEMPERATURE RANGE DURING A CHARGE CYCLE VHTF VTCO CHARGE SUSPENDED CHARGE SUSPENDED GND GND Figure 14. TS pin, Thermistor Sense Thresholds Assuming a 103AT NTC thermistor on the battery pack as shown in Figure 1, the value RT1 and RT2 can be determined by using Equation 6 and Equation 7: æ 1 1 ö VVREF ´ RTHCOLD ´ RTHHOT ´ ç ÷ V V HTF ø è LTF RT2 = æV ö æV ö RTHHOT ´ ç VREF - 1÷ - RTHCOLD ç VREF - 1÷ V V è HTF ø è LTF ø VVREF RT1 = VLTF 1 RT2 + (6) -1 1 RTHCOLD (7) For example, a 103AT NTC thermestor is used to monitor the battery pack temperature. Select TCOLD = 0ºC and THOT = 40ºC. Then we get RT2 = 430 kΩ, RT1 = 9.311Ω and TCUT_OFF = 45ºC. A small RC filter is suggested to use for system-level ESD protection. 16 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 bq24600 www.ti.com SLUS891 – FEBRUARY 2010 VREF RT1 bq24600 TS RT2 RTH 103AT Figure 15. TS Resistor Network Timer Fault Recovery The bq24600 provides a recovery method to deal with timer fault conditions. The following summarizes this method: Condition 1: The battery voltage is above the recharge threshold and a timeout fault occurs. Recovery Method: The timer fault will clear when the battery voltage falls below the recharge threshold, and battery detection will begin. Taking CE low or a POR condition will also clear the fault. Condition 2: The battery voltage is below the recharge threshold and a timeout fault occurs. Recovery Method: Under this scenario, the bq24600 applies the IFAULT current to the battery. This small current is used to detect a battery removal condition and remains on as long as the battery voltage stays below the recharge threshold. If the battery voltage goes above the recharge threshold, the bq24600 disables the fault current and executes the recovery method described in Condition 1. Taking CE low or a POR condition will also clear the fault. PG Output The open drain PG(power good) output indicates whether the VCC voltage is valid or not. The open drain FET turns on whenever bq24600 has a valid VCC input (not in UVLO or ACOV or SLEEP mode). The PGpin can be used to drive an LED or communicate to the host processor. It can also be used to drive ACFET and BATFET. CE (Charge Enable) The CE digital input is used to disable or enable the charge process. A high-level signal on this pin enables charge, provided all the other conditions for charge are met (see Enabling and Disabling Charge). A high to low transition on this pin also resets all timers and fault conditions. There is an internal 1 MΩ pull-down resistor on the CE pin, so if CE is floated the charge will not turn on. Inductor, Capacitor, and Sense Resistor Selection Guidelines The bq24600 provides internal loop compensation. With this scheme, best stability occurs when the LC resonant frequency, fo, is approximately 17 kHz – 25 kHz for bq24600, per Equation 8: 1 fo = 2 p L o Co (8) Table 2 provides a summary of typical LC components for various charge currents. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 17 bq24600 SLUS891 – FEBRUARY 2010 www.ti.com Table 2. Typical Inductor, Capacitor, and Sense Resistor Values as a Function of Charge Current Charge Current 2A 4A 6A 8A 10A Output Inductor Lo 3.3 mH 3.3 mH 2.2 mH 1.5 mH 1.5 mH Output Capacitor Co 20 mF 20 mF 30 mF 40 mF 40 mF Sense Resistor 10 mΩ 10 mΩ 10 mΩ 10 mΩ 10 mΩ Charge Status Outputs The open-drain STAT outputs indicate various charger operations as shown in Table 3. These status pins can be used to drive LEDs or communicate with the host processor. Note that OFF indicates that the open-drain transistor is turned off. Table 3. STAT Pin Definition for bq24600 CHARGE STATE Charge in progress ON Charge complete (PG = LOW) OFF Sleep mode (PG = HIGH) OFF Charge suspend, timer fault, input over-voltage, battery absent 18 STAT Submit Documentation Feedback BLINK (0.5 Hz) Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 bq24600 www.ti.com SLUS891 – FEBRUARY 2010 Battery Detection For applications with removable battery packs, bq24600 provides a battery absent detection scheme to reliably detect insertion or removal of battery packs. CE need to be HIGH to enable battery detection function. POR or RECHARGE The battery detection routine runs on power up, or if VFB falls below VRECH due to removing a battery or discharging a battery Apply 8mA discharge current, start 1s timer VFB < VLOWV No Yes 1s timer expired No Yes Battery Present, Begin Charge Disable 8mA discharge current Enable 125mA Charge, Start 0.5s timer VFB > VRECH Yes Disable 125mA Charge No 0.5s timer expired No Yes Battery Present, Begin Charge Battery Absent Figure 16. Battery Detection Flowchart Once the device has powered up, an 8mA discharge current will be applied to the SRN terminal. If the battery voltage falls below the LOWV threshold within 1 second, the discharge source is turned off, and the charger is turned on at low charge current (125mA). If the battery voltage gets up above the recharge threshold within 500ms, there is no battery present and the cycle restarts. If either the 500ms or 1 second timer time out before the respective thresholds are hit, a battery is detected and a charge cycle is initiated. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 19 bq24600 SLUS891 – FEBRUARY 2010 www.ti.com Battery not detected VREG VRECH (VWAKE) Battery inserted VLOWV (VDISH) Battery detected t LOWV_DEG t WAKE tRECH_DEG Figure 17. Battery Detect Timing Diagram Care must be taken that the total output capacitance at the battery node is not so large that the discharge current source cannot pull the voltage below the LOWV threshold during the 1 second discharge time. The maximum output capacitance can be calculated as shown in Equation 9. ´ tDISCH I CMAX = DISCH é R ù 0.5 ´ ê1+ 2 ú ë R1 û (9) Where CMAX is the maximum output capacitance, IDISCH is the discharge current, tDISCH is the discharge time, and R2 and R1 are the voltage feedback resistors from the battery to the VFB pin. The 0.5 factor is the difference between the RECHARGE and the LOWV thresholds at the VFB pin. EXAMPLE For a 3-cell Li+ charger, with R2 = 500kΩ, R1 = 100kΩ (giving 12.6V for voltage regulation), IDISCH = 8mA, tDISCH = 1 second, 8mA ´ 1sec CMAX = = 2.7mF é 500 kW ù 0.5 ´ ê1+ ú ë 100 kW û (10) Based on these calculations, no more than 2.7 mF should be allowed on the battery node for proper operation of the battery detection circuit. Component List for Typical System Circuit of Figure 1 PART DESIGNATOR QTY DESCRIPTION Q4, Q5 2 N-channel MOSFET, 40 V, 30 A, PowerPAK SO-8, Vishay-Siliconix, SiR426DN D1 1 Diode, Dual Schottky, 30 V, 200 mA, SOT23, Fairchild, BAT54C D2 1 Schottky Diode, 40V, 5A, SMC, ON Semiconductor, MBRS540T3 RSR 2 Sense Resistor, 10 mΩ, 1%, 1 W, 2010, Vishay-Dale, WSL2010R0100F L1 1 Inductor, 3.3 mH, 5.5 A, Vishay-Dale, IHLP2525CZ C8, C9, C12, C13 4 Capacitor, Ceramic, 10 mF, 35 V, 10%, X7R 20 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 bq24600 www.ti.com PART DESIGNATOR SLUS891 – FEBRUARY 2010 QTY DESCRIPTION C2 1 Capacitor, Ceramic, 2.2µF, 50 V, 10%, X7R C4, C5 2 Capacitor, Ceramic, 1 mF, 16V, 10%, X7R C7 1 Capacitor, Ceramic, 1µF, 50 V, 10%, X7R C1, C6, C11 4 Capacitor, Ceramic, 0.1 mF, 16 V, 10%, X7R Cff 1 Capacitor, Ceramic, 22 pF, 35 V, 10%, X7R C10 1 Capacitor, Ceramic, 0.1 mF, 50V, 10% R1, R7 2 Resistor, Chip, 100 kΩ, 1/16W, 0.5% R2 1 Resistor, Chip, 900 kΩ, 1/16W, 0.5% R8 1 Resistor, Chip, 22.1 kΩ, 1/16W, 0.5% R9 1 Resistor, Chip, 9.31 kΩ, 1/16W, 1% R10 1 Resistor, Chip, 430 kΩ, 1/16W, 1% R11 1 Resistor, Chip, 2Ω, 1W, 5% R13, R14 2 Resistor, Chip, 10 kΩ, 1/16W, 5% R5 1 Resistor, Chip, 100 Ω, 1/16W, 0.5% R6 1 Resistor, Chip, 10 Ω, 1W, 5% D3, D4 2 LED Diode, Green, 2.1V, 10mΩ, Vishay-Dale, WSL2010R0100F Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 21 bq24600 SLUS891 – FEBRUARY 2010 www.ti.com APPLICATION INFORMATION Inductor Selection The bq24600 has 1.2 MHz switching frequency to allow the use of small inductor and capacitor values. Inductor saturation current should be higher than the charging current (ICHARGE) plus half the ripple current (IRIPPLE): ISAT ³ ICHG + (1/2) IRIPPLE (11) The inductor ripple current depends on input voltage (VIN), duty cycle (D=VOUT/VIN), switching frequency (fs) and inductance (L): V ´ D ´ (1 - D) IRIPPLE = IN fS ´ L (12) The maximum inductor ripple current happens with D = 0.5 or close to 0.5. For example, the battery charging voltage range is from 9V to 12.6V for 3-cell battery pack. For 20V adapter voltage, 10V battery voltage gives the maximum inductor ripple current. Another example is 4-cell battery, the battery voltage range is from 12V to 16.8V, and 12V battery voltage gives the maximum inductor ripple current. Usually inductor ripple is designed in the range of (20–40%) maximum charging current as a trade-off between inductor size and efficiency for a practical design. The bq24600 has cycle-by-cycle charge under current protection (UCP) by monitoring charging current sensing resistor to prevent negative inductor current. The Typical UCP threshold is 5mV falling edge corresponding to 0.5A falling edge for a 10mΩ charging current sensing resistor. Input Capacitor Input capacitor should have enough ripple current rating to absorb input switching ripple current. The worst case RMS ripple current is half of the charging current when duty cycle is 0.5. If the converter does not operate at 50% duty cycle, then the worst case capacitor RMS current ICIN occurs where the duty cycle is closest to 50% and can be estimated by the following equation: ICIN = ICHG ´ D ´ (1 - D) (13) Low ESR ceramic capacitor such as X7R or X5R is preferred for input decoupling capacitor and should be placed to the drain of the high side MOSFET and source of the low side MOSFET as close as possible. Voltage rating of the capacitor must be higher than normal input voltage level. 25V rating or higher capacitor is preferred for 20V input voltage. 10-20µF capacitance is suggested for typical of 3-4A charging current. Output Capacitor Output capacitor also should have enough ripple current rating to absorb output switching ripple current. The output capacitor RMS current ICOUT is given: I ICOUT = RIPPLE » 0.29 ´ IRIPPLE 2 ´ 3 (14) The output capacitor voltage ripple can be calculated as follows: DVo = 1 8LCfs 2 2 æ V ç 1 - OUT ç VIN è ö ÷ ÷ ø (15) At certain input/output voltage and switching frequenccy, the voltage ripple can be reduced by increasing the output filter LC. The bq24600 has internal loop compensator. To get good loop stability, the resonant frequency of the output inductor and output capacitor should be designed between 17 kHz and 25 kHz. The preferred ceramic capacitor is 25V or higher rating, X7R or X5R for 4-cell application. 22 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 bq24600 www.ti.com SLUS891 – FEBRUARY 2010 Power MOSFETs Selection Two external N-channel MOSFETs are used for a synchronous switching battery charger. The gate drivers are internally integrated into the IC with 6V of gate drive voltage. 30V or higher voltage rating MOSFETs are preferred for 20V input voltage and 40V or higher rating MOSFETs are prefered for 20-28V input voltage. Figure-of-merit (FOM) is usually used for selecting proper MOSFET based on a tradeoff between the conduction loss and switching loss. For top side MOSFET, FOM is defined as the product of a MOSFET's on-resistance, RDS(ON), and the gate-to-drain charge, QGD. For bottom side MOSFET, FOM is defined as the product of the MOSFET's on-resistance, RDS(ON), and the total gate charge, QG. FOM top = RDS(on) ´ QG D FOMbottom = RDS(on) ´ QG (16) The lower the FOM value, the lower the total power loss. Usually lower RDS(ON) has higher cost with the same package size. The top-side MOSFET loss includes conduction loss and switching loss. It is a function of duty cycle (D=VOUT/VIN), charging current (ICHARGE), MOSFET's on-resistance RDS(ON)), input voltage (VIN), switching frequency (F), turn on time (ton) and turn off time (ttoff): 1 Ptop = D ´ ICHG2 ´ RDS(on) + ´ VIN ´ ICHG ´ (t on + t off ) ´ fS 2 (17) The first item represents the conduction loss. Usually MOSFET RDS(ON) increases by 50% with 100ºC junction temperature rise. The second term represents the switching loss. The MOSFET turn-on and turn off times are given by: Q Q ton = SW , t off = SW Ion Ioff (18) where Qsw is the switching charge, Ion is the turn-on gate driving current and Ioff is the turn-off gate driving current. If the switching charge is not given in MOSFET datasheet, it can be estimated by gate-to-drain charge (QGD) and gate-to-source charge (QGS): 1 QSW = QGD + ´ QGS 2 (19) Gate driving current total can be estimated by REGN voltage (VREGN), MOSFET plateau voltage (Vplt), total turn-on gate resistance (Ron) and turn-off gate resistance Roff) of the gate driver: VREG N - Vplt Vplt Ion = , Ioff = Ron Roff (20) The conduction loss of the bottom-side MOSFET is calculated with the following equation when it operates in synchronous continuous conduction mode: Pbottom = (1 - D) ´ ICHG 2 ´ RDS(on) (21) If the SRP-SRN voltage decreases below 5mV (The charger is also forced into non-synchronous mode when the average SRP-SRN voltage is lower than 1.25mV), the low side FET will be turned off for the remainder of the switching cycle to prevent negative inductor current. As a result all the freewheeling current goes through the body-diode of the bottom-side MOSFET. The maximum charging current in non-synchronous mode can be up to 0.9A (0.5A typ) for a 10mΩ charging current sensing resistor considering IC tolerance. Choose the bottom-side MOSFET with either an internal Schottky or body diode capable of carrying the maximum non-synchronous mode charging current. MOSFET gate driver power loss contributes to the domainant losses on controller IC, when the buck converter is switching. Choosing the MOSFET with a small Qg_total will largely reduce the IC power loss to avoid thermal shutdown. PICLoss_driver = VIN × Qg_total × fs (22) Where Qg_total is the total gate charge for both upper and lower MOSFET at 6V VREGN Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 23 bq24600 SLUS891 – FEBRUARY 2010 www.ti.com Input Filter Design During adapter hot plug-in, the parasitic inductance and input capacitor from the adapter cable form a second order system. The voltage spike at VCC pin maybe beyond IC maximum voltage rating and damage IC. The input filter must be carefully designed and tested to prevent over voltage event on VCC pin. There are several methods to damping or limit the over voltage spike during adapter hot plug-in. An electrolytic capacitor with high ESR as an input capacitor can damp the over voltage spike well below the IC maximum pin voltage rating. A high current capability TVS Zener diode can also limit the over voltage level to an IC safe level. However these two solutions may not have low cost or small size. A cost effective and small size solution is shown in Figure 18. The R1 and C1 are composed of a damping RC network to damp the hot plug-in oscillation. As a result the over voltage spike is limited to a safe level. D1 is used for reverse voltage protection for VCC pin ( it can be the input schottky diode or the body diode of input ACFET). C2 is VCC pin decoupling capacitor and it should be place to VCC pin as close as possible. The R2 and C2 form a damping RC network to further protect the IC from high dv/dt and high voltage spike. C2 value should be less than C1 value so R1 can dominant the equivalent ESR value to get enough damping effetc for hot plug-in. R1 and R2 package must be sized enough to handle inrush current power loss according to resistor manufacturer’s datasheet. The filter components value always need to be verified with real application and minor adjustments may need to fit in the real application circuit. D1 Adapter connector R1 2W C1 2.2 mF (2010) R2 (1206) 4.7 -30W VCC pin C2 0.1-1 mF Figure 18. Input Filter PCB Layout The switching node rise and fall times should be minimized for minimum switching loss. Proper layout of the components to minimize high frequency current path loop (see Figure 19) is important to prevent electrical and magnetic field radiation and high frequency resonant problems. Here is a PCB layout priority list for proper layout. Layout PCB according to this specific order is essential. 1. Place input capacitor as close as possible to switching MOSFET’s supply and ground connections and use shortest copper trace connection. These parts should be placed on the same layer of PCB instead of on different layers and using vias to make this connection. 2. The IC should be placed close to the switching MOSFET’s gate terminals and keep the gate drive signal traces short for a clean MOSFET drive. The IC can be placed on the other side of the PCB of switching MOSFETs. 3. Place inductor input terminal to switching MOSFET’s output terminal as close as possible. Minimize the copper area of this trace to lower electrical and magnetic field radiation but make the trace wide enough to carry the charging current. Do not use multiple layers in parallel for this connection. Minimize parasitic capacitance from this area to any other trace or plane. 4. The charging current sensing resistor should be placed right next to the inductor output. Route the sense leads connected across the sensing resistor back to the IC in same layer, close to each other (minimize loop area) and do not route the sense leads through a high-current path (see Figure 20 for Kelvin connection for best current accuracy). Place decoupling capacitor on these traces next to the IC. 5. Place output capacitor next to the sensing resistor output and ground. 6. Output capacitor ground connections need to be tied to the same copper that connects to the input capacitor ground before connecting to system ground. 7. Route analog ground separately from power ground and use single ground connection to tie charger power ground to charger analog ground. Just beneath the IC use analog ground copper pour but avoid power pins to reduce inductive and capacitive noise coupling. Connect analog ground to GND. Connect analog ground and power ground together using PowerPAD as the single ground connection point. Or using a 0Ω resistor to tie analog ground to power ground (PowerPAD should tie to analog ground in this case). A star-connection 24 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 bq24600 www.ti.com SLUS891 – FEBRUARY 2010 under PowerPAD is highly recommended. 8. It is critical that the exposed PowerPAD on the backside of the IC package be soldered to the PCB ground. Ensure that there are sufficient thermal vias directly under the IC, connecting to the ground plane on the other layers. 9. Decoupling capacitors should be placed next to the IC pins and make trace connection as short as possible. 10. All via size and number should be enough for a given current path. SW L1 V BAT R1 High Frequency VIN BAT Current C1 Path PGND C2 C3 Figure 19. High Frequency Current Path Current Direction R SNS Current Sensing Direction To SRP - SRN pin Figure 20. Sensing Resistor PCB Layout Refer to the EVM design (SLUU410) for the recommended component placement with trace and via locations. For the QFN information, refer to SCBA017 and SLUA271. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 25 PACKAGE OPTION ADDENDUM www.ti.com 24-Mar-2010 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty BQ24600RVAR ACTIVE VQFN RVA 16 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24600RVAT ACTIVE VQFN RVA 16 250 CU NIPDAU Level-2-260C-1 YEAR Green (RoHS & no Sb/Br) Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. 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