HYNIX HY29LV800

HY29LV800
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
n
n
n
n
n
n
n
n
– Read, program and erase operations from
2.7 to 3.6 volts
– Ideal for battery-powered applications
High Performance
– 70 and 90 ns access time versions for full
voltage range operation
– 55 ns access time version for operation
from 3.0 to 3.6 volts
Ultra-low Power Consumption (Typical
Values)
– Automatic sleep mode current: 0.2 µA
– Standby mode current: 0.2 µA
– Read current: 7 mA (at 5 Mhz)
– Program/erase current: 15 mA
Flexible Sector Architecture:
– One 16 KB, two 8 KB, one 32 KB and
fifteen 64 KB sectors in byte mode
– One 8 KW, two 4 KW, one 16 KW and
fifteen 32 KW sectors in word mode
– Top or bottom boot block configurations
available
Sector Protection
– Allows locking of a sector or sectors to
prevent program or erase operations
within that sector
– Sectors lockable in-system or via
programming equipment
– Temporary Sector Unprotect allows
changes in locked sectors (requires high
voltage on RESET# pin)
Fast Program and Erase Times
– Sector erase time: 0.5 sec typical for each
sector
– Chip erase time: 10 sec typical
– Byte program time: 9 µs typical
– Word program time: 11 µs typical
Unlock Bypass Program Command
– Reduces programming time when issuing
multiple program command sequences
Automatic Erase Algorithm Preprograms
and Erases Any Combination of Sectors
or the Entire Chip
Automatic Program Algorithm Writes and
Verifies Data at Specified Addresses
Preliminary
Revision 1.0, November 2001
n Minimum 100,000 Write Cycles per Sector
n Compatible With JEDEC standards
n
n
n
n
n
– Pinout and software compatible with
single-power supply Flash devices
– Superior inadvertent write protection
Data# Polling and Toggle Bits
– Provide software confirmation of
completion of program and erase
operations
Ready/Busy# Pin
– Provides hardware confirmation of
completion of program and erase
operations
Erase Suspend/Erase Resume
– Suspends an erase operation to allow
reading data from, or programming data
to, a sector that is not being erased
– Erase Resume can then be invoked to
complete suspended erasure
Hardware Reset Pin (RESET#) Resets the
Device to Reading Array Data
Space Efficient Packaging
– 44-pin PSOP, 48-pin TSOP and 48-ball
FBGA packages
LOGIC DIAGRAM
19
8
A[18:0]
DQ[7:0]
7
CE#
DQ[14:8]
OE#
DQ[15]/A[-1]
WE#
RESET#
BYTE#
RY/BY#
HY29LV800
GENERAL DESCRIPTION
The HY29LV800 is an 8 Mbit, 3 volt-only, CMOS
Flash memory organized as 1,048,576 (1M) bytes
or 524,288 (512K) words that is available in 44pin PSOP, 48-pin TSOP and 48-ball FBGA packages. Word-wide data (x16) appears on DQ[15:0]
and byte-wide (x8) data appears on DQ[7:0].
The HY29LV800 can be programmed and erased
in-system with a single 3 volt VCC supply. Internally generated and regulated voltages are provided for program and erase operations, so that
the device does not require a higher voltage VPP
power supply to perform those functions. The device can also be programmed in standard EPROM
programmers. Access times as low as 70 ns over
the full operating voltage range of 2.7 - 3.6 volts
are offered for timing compatibility with the zero
wait state requirements of high speed microprocessors. A 55 ns version operating from 3.0 to
3.6 volts is also available. To eliminate bus contention, the HY29LV800 has separate chip enable
(CE#), write enable (WE#) and output enable
(OE#) controls.
The device is compatible with the JEDEC singlepower-supply Flash command set standard. Commands are written to the command register using
standard microprocessor write timings. They are
then routed to an internal state-machine that controls the erase and programming circuits. Device
programming is performed a byte/word at a time
by executing the four-cycle Program Command
write sequence. This initiates an internal algorithm
that automatically times the program pulse widths
and verifies proper cell margin. Faster programming times can be achieved by placing the
HY29LV800 in the Unlock Bypass mode, which
requires only two write cycles to program data instead of four.
The HY29LV800’s sector erase architecture allows
any number of array sectors to be erased and re-
2
programmed without affecting the data contents
of other sectors. Device erasure is initiated by
executing the Erase Command sequence. This
initiates an internal algorithm that automatically
preprograms the array (if it is not already programmed) before executing the erase operation.
As during programming cycles, the device automatically times the erase pulse widths and verifies proper cell margin. Hardware Sector Protection optionally disables both program and erase
operations in any combination of the sectors of
the memory array, while Temporary Sector Unprotect allows in-system erasure and code changes
in previously protected sectors. Erase Suspend
enables the user to put erase on hold for any period of time to read data from, or program data to,
any sector that is not selected for erasure. True
background erase can thus be achieved. The device is fully erased when shipped from the factory.
Addresses and data needed for the programming
and erase operations are internally latched during
write cycles, and the host system can detect
completion of a program or erase operation by
observing the RY/BY# pin, or by reading the DQ[7]
(Data# Polling) and DQ[6] (toggle) status bits.
Hardware data protection measures include a low
VCC detector that automatically inhibits write operations during power transitions.
After a program or erase cycle has been completed, or after assertion of the RESET# pin (which
terminates any operation in progress), the device
is ready to read data or to accept another command. Reading data out of the device is similar to
reading from other Flash or EPROM devices.
Two power-saving features are embodied in the
HY29LV800. When addresses have been stable
for a specified amount of time, the device enters
the automatic sleep mode. The host can also place
the device into the standby mode. Power consumption is greatly reduced in both these modes.
Rev. 1.0/Nov. 01
HY29LV800
BLOCK DIAGRAM
DQ[15:0]
A[18:0], A[-1]
STATE
CONTROL
ERASE VOLTAGE
GENERATOR AND
SECTOR SWITCHES
DQ[15:0]
WE#
CE#
I/O BUFFERS
COMMAND
REGISTER
I/O CONTROL
DATA LATCH
OE#
PROGRAM
VOLTAGE
GENERATOR
BYTE#
RESET#
V C C DETECTOR
TIMER
A[18:0], A[-1]
ADDRESS LATCH
RY/BY#
Y-DECODER
Y-GATING
X-DECODER
8 Mb FLASH
MEMORY
ARRAY
(19 Sectors)
SIGNAL DESCRIPTIONS
Name
A[18:0]
DQ[15]/A[-1],
DQ[14:0]
BYTE#
Type
Description
Address, active High. These 19 inputs, combined with the DQ[15]/A[-1] input in
Byte mode, select one location within the array for read or write operations.
Data Bus, active High. These pins provide an 8- or 16-bit data path for read
Inputs/Outputs
and write operations. In Byte mode, DQ[15]/A[-1] is used as the LSB of the 20bit
Tri-state
byte address input. DQ[14:8] are unused and remain tri-stated in Byte mode.
Byte Mode, active Low. Low selects Byte mode, High selects Word mode.
Input
Inputs
C E#
Input
OE#
Input
WE#
Input
RESET#
Input
RY/BY#
Output
Open Drain
V CC
--
Chip Enable, active Low. This input must be asserted to read data from or
wri te data to the HY29LV800. When Hi gh, the data bus i s tri -stated and the
device is placed in the Standby mode.
Output Enable, active Low . Asserted for read operations and negated for
write operations. BYTE# determines whether a byte or a word is read during the
read operation.
W r ite E n a b le , a c tiv e L o w. C o ntro ls wri ti ng o f c o m m a nd s o r c o m m a nd
sequences in order to program data or erase sectors of the memory array. A write
operation takes place when WE# is asserted while CE# is Low and OE# is High.
Hardw are Reset, active Low. Provides a hardware method of resetting the
HY29LV800 to the read array state. When the device is reset, it immediately
terminates any operation in progress. While RESET# is asserted, the device
will be in the Standby mode.
R e a d y /B u s y S ta tu s . Ind i c a te s whe the r a wri te o r e ra s e c o mma nd i s i n
progress or has been completed. Remai ns Low whi le the devi ce i s acti vely
programming data or erasing, and goes High when it is ready to read array data.
3-volt (nominal) pow er supply.
V SS
--
Pow er and signal ground.
Rev. 1.0/Nov. 01
3
HY29LV800
PIN CONFIGURATIONS
48-Ball FBGA (6 x 8 mm, Top View, Balls Facing Down)
4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
DQ3
DQ11
21
22
B6
C6
D6
E6
F6
G6
H6
A[13]
A[12]
A[14]
A[15]
A[16]
BYTE#
DQ[15]/A[-1]
V SS
A5
B5
C5
D5
E5
F5
G5
H5
A[9]
A[8]
A[10]
A[11]
DQ[7]
DQ[14]
DQ[13]
DQ[6]
A4
B4
C4
D4
E4
F4
G4
H4
WE#
RESET#
NC
NC
DQ[5]
DQ[12]
V CC
DQ[4]
A3
B3
C3
D3
E3
F3
G3
H3
RY/BY#
NC
A[18]
NC
DQ[2]
DQ[10]
DQ[11]
DQ[3]
A2
B2
C2
D2
E2
F2
G2
H2
A[7]
A[17]
A[6]
A[5]
DQ[0]
DQ[8]
DQ[9]
DQ[1]
A1
B1
C1
D1
E1
F1
G1
H1
A[3]
A[4]
A[2]
A[1]
A[0]
CE#
OE#
V SS
PSOP44
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
V SS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
A6
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
RESET#
WE#
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE#
V SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
24
23
DQ4
VCC
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
A18
A17
A7
A6
A5
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
A4
A3
A2
A1
21
22
23
24
Standard
TSOP48
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
A16
BYTE#
V SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
28
27
26
25
OE#
V SS
CE#
A0
Rev. 1.0/Nov. 01
HY29LV800
CONVENTIONS
Unless otherwise noted, a positive logic (active
High) convention is assumed throughout this document, whereby the presence at a pin of a higher,
more positive voltage (VIH) causes assertion of the
signal. A ‘#’ symbol following the signal name, e.g.,
RESET#, indicates that the signal is asserted in
the Low state (VIL). See DC specifications for VIH
and VIL values.
Whenever a signal is separated into numbered
bits, e.g., DQ[7], DQ[6], ..., DQ[0], the family of
bits may also be shown collectively, e.g., as
DQ[7:0].
The designation 0xNNNN (N = 0, 1, 2, . . . , 9, A, .
. . , E, F) indicates a number expressed in hexadecimal notation. The designation 0bXXXX indicates a
number expressed in binary notation (X = 0, 1).
MEMORY ARRAY ORGANIZATION
The 8 Mbit Flash memory array is organized into
19 blocks called sectors (S0, S1, . . . , S18). A
sector is the smallest unit that can be erased and
that can be protected to prevent accidental or unauthorized erasure. See the ‘Bus Operations’ and
‘Command Definitions’ sections of this document
for additional information on these functions.
In the HY29LV800, four of the sectors, which comprise the boot block, vary in size from 8 to 32
Kbytes (4 to 16 Kwords), while the remaining 15
sectors are uniformly sized at 64 Kbytes (32
Kwords). The boot block can be located at the
bottom of the address range (HY29LV800B) or at
the top of the address range (HY29LV800T).
Tables 1 and 2 define the sector addresses and
corresponding address ranges for the top and bottom boot block versions of the HY29LV800.
BUS OPERATIONS
Device bus operations are initiated through the
internal command register, which consists of sets
of latches that store the commands, along with
the address and data information, if any, needed
to execute the specific command. The command
register itself does not occupy any addressable
memory location. The contents of the command
register serve as inputs to an internal state machine whose outputs control the operation of the
device. Table 3 lists the normal bus operations,
the inputs and control levels they require, and the
resulting outputs. Certain bus operations require
a high voltage on one or more device pins. Those
are described in Table 4.
Read Operation
Data is read from the HY29LV800 by using standard microprocessor read cycles while placing the
byte or word address on the device’s address inputs. The host system must drive the CE# and
OE# pins LOW and drive WE# high for a valid read
operation to take place. The BYTE# pin determines
whether the device outputs array data in words
(DQ[15:0]) or in bytes (DQ[7:0]).
The HY29LV800 is automatically set for reading
array data after device power-up and after a hard-
Rev. 1.0/Nov. 01
ware reset to ensure that no spurious alteration of
the memory content occurs during the power transition. No command is necessary in this mode to
obtain array data, and the device remains enabled
for read accesses until the command register contents are altered.
This device features an Erase Suspend mode.
While in this mode, the host may read the array
data from any sector of memory that is not marked
for erasure. If the host reads from an address
within an erase-suspended (or erasing) sector, or
while the device is performing a byte or word program operation, the device outputs status data
instead of array data. After completing an Automatic Program or Automatic Erase algorithm within
a sector, that sector automatically returns to the
read array data mode. After completing a programming operation in the Erase Suspend mode, the
system may once again read array data with the
same exception noted above.
The host must issue a hardware reset or the software reset command to return a sector to the read
array data mode if DQ[5] goes high during a program or erase cycle, or to return the device to the
read array data mode while it is in the Electronic
ID mode.
5
HY29LV800
Table 1. HY29LV800T (Top Boot Block) Memory Array Organization
Sector
Siz e
(KB/KW)
S0
S1
S2
S3
S4
S5
S6
S7
S8
S9
S 10
S11
S 12
S 13
S 14
S 15
S 16
S 17
S 18
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
32/16
8/4
8/4
16/8
Sector Address 1
A[18] A[17] A[16] A[15] A[14] A[13] A[12]
0
0
0
0
X
X
X
0
0
0
1
X
X
X
0
0
1
0
X
X
X
0
0
1
1
X
X
X
0
1
0
0
X
X
X
0
1
0
1
X
X
X
0
1
1
0
X
X
X
0
1
1
1
X
X
X
1
0
0
0
X
X
X
1
0
0
1
X
X
X
1
0
1
0
X
X
X
1
0
1
1
X
X
X
1
1
0
0
X
X
X
1
1
0
1
X
X
X
1
1
1
0
X
X
X
1
1
1
1
0
X
X
1
1
1
1
1
0
0
1
1
1
1
1
0
1
1
1
1
1
1
1
X
Byte Mode
Address Range 2
Word Mode
Address Range 3
0x00000 - 0x0FFFF
0x10000 - 0x1FFFF
0x20000 - 0x2FFFF
0x30000 - 0x3FFFF
0x40000 - 0x4FFFF
0x50000 - 0x5FFFF
0x60000 - 0x6FFFF
0x70000 - 0x7FFFF
0x80000 - 0x8FFFF
0x90000 - 0x9FFFF
0xA0000 - 0xAFFFF
0xB0000 - 0xBFFFF
0xC0000 - 0xCFFFF
0xD0000 - 0xDFFFF
0xE0000 - 0xEFFFF
0xF0000 - 0xF7FFF
0xF8000 -0xF9FFF
0xFA000 - 0xFBFFF
0xFC000 - 0xFFFFF
0x00000 - 0x07FFF
0x08000 - 0x0FFFF
0x10000 - 0x17FFF
0x18000 - 0x1FFFF
0x20000 - 0x27FFF
0x28000 - 0x2FFFF
0x30000 - 0x37FFF
0x38000 - 0x3FFFF
0x40000 - 0x47FFF
0x48000 - 0x4FFFF
0x50000 - 0x57FFF
0x58000 - 0x5FFFF
0x60000 - 0x67FFF
0x68000 - 0x6FFFF
0x70000 - 0x77FFF
0x78000 - 0x7BFFF
0x7C000 - 0x7CFFF
0X7D000 - 0x7DFFF
0x7E000 - 0x7FFFF
Table 2. HY29LV800B (Bottom Boot Block) Memory Array Organization
Sector
S0
S1
S2
S3
S4
S5
S6
S7
S8
S9
S 10
S11
S 12
S 13
S 14
S 15
S 16
S 17
S 18
Sector Address 1
Siz e
(KB/KW) A[18] A[17] A[16] A[15] A[14] A[13] A[12]
16/8
8/4
8/4
32/16
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
0
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Byte Mode
Address Range 2
Word Mode
Address Range 3
0x00000 - 0x03FFF
0x04000 - 0x05FFF
0x06000 - 0x07FFF
0x08000 - 0x0FFFF
0x10000 - 0x1FFFF
0x20000 - 0x2FFFF
0x30000 - 0x3FFFF
0x40000 - 0x4FFFF
0x50000 - 0x5FFFF
0x60000 - 0x6FFFF
0x70000 - 0x7FFFF
0x80000 - 0x8FFFF
0x90000 - 0x9FFFF
0xA0000 - 0xAFFFF
0xB0000 - 0xBFFFF
0xC0000 - 0xCFFFF
0xD0000 - 0xDFFFF
0xE0000 - 0xEFFFF
0xF0000 - 0xFFFFF
0x00000 - 0x01FFF
0x02000 - 0x02FFF
0X03000 - 0x03FFF
0x04000 - 0x07FFF
0x08000 - 0x0FFFF
0x10000 - 0x17FFF
0x18000 - 0x1FFFF
0x20000 - 0x27FFF
0x28000 - 0x2FFFF
0x30000 - 0x37FFF
0x38000 - 0x3FFFF
0x40000 - 0x47FFF
0x48000 - 0x4FFFF
0x50000 - 0x57FFF
0x58000 - 0x5FFFF
0x60000 - 0x67FFF
0x68000 - 0x6FFFF
0x70000 - 0x77FFF
0x78000 - 0x7FFFF
Notes (Tables 1 and 2):
1. ‘X’ indicates don’t care.
2. ‘0xN. . . N’ indicates an address in hexadecimal notation.
3. The address range in byte mode is A[18:0, -1]. The address range in word mode is A[18:0].
6
Rev. 1.0/Nov. 01
HY29LV800
Table 3. HY29LV800 Normal Bus Operations 1
Operation
RESET# Address 2
OE#
WE#
Read
L
L
H
H
AIN
DOUT
DOUT
High-Z
Write
L
H
L
H
AIN
DIN
DIN
High-Z
Output Disable
L
H
H
H
X
High-Z
High-Z
High-Z
CE# Normal Standby
H
X
X
H
X
High-Z
High-Z
High-Z
VCC ± 0.3V
X
X
VCC ± 0.3V
X
High-Z
High-Z
High-Z
X
X
X
L
X
High-Z
High-Z
High-Z
X
X
X
VSS ± 0.3V
X
High-Z
High-Z
High-Z
CE# Deep Standby
Hardware Reset
(Normal Standby)
Hardware Reset
(Deep Standby)
DQ[7: 0]
DQ[15: 8] 3
C E#
BYTE# = H BYTE# = L
Notes:
1. L = VIL, H = VIH, X = Don’t Care (L or H), DOUT = Data Out, DIN = Data In. See DC Characteristics for voltage levels.
2. Address is A[18:0, -1] in Byte Mode and A[18:0] in Word Mode.
3. DQ[15] is the A[-1] input in Byte Mode (BYTE# = L).
Table 4. HY29LV800 Bus Operations Requiring High Voltage 1, 2
DQ[15: 8]
Operation 3
CE# OE# WE# RESET# A[19:12] A[9] A[6] A[1] A[0]
DQ[7: 0]
BYTE# BYTE#
=H
= L5
Sector Protect
L
H
L
VID
SA 4
X
L
H
L
DIN/DOUT
X
X
Sector Unprotect
L
H
L
VID
X
X
H
H
L
DIN/DOUT
X
X
Temporary Sector
Unprotect 6
--
--
--
VID
--
--
--
--
--
--
--
--
Manufacturer Code
L
L
H
H
X
VID
L
L
L
0xAD
X
High-Z
D evi ce HY29LV800B
C ode HY29LV800T
L
L
H
H
X
VID
L
L
H
0x22
High-Z
X
High-Z
Sector Protection
Verification
L
L
H
H
SA 4
VID
L
H
L
0x5B
0xDA
0x00 =
Unprotected
0x01 =
Protected
Notes:
1. L = VIL, H = VIH, X = Don’t Care (L OR H). See DC Characteristics for voltage levels.
2. Address bits not specified are Don’t Care.
3. See text and for additional information.
4. SA = Sector Address. See Tables 1 and 2.
5. DQ[15] is the A[-1] input in Byte Mode (BYTE# = L).
6. Normal read, write and output disable operations are used in this mode. See Table 3.
Rev. 1.0/Nov. 01
7
HY29LV800
Write Operation
Certain operations, including programming data
and erasing sectors of memory, require the host
to write a command or command sequence to the
HY29LV800. Writes to the device are performed
by placing the byte or word address on the device’s
address inputs while the data to be written is input
on DQ[15:0] (BYTE# = High) or DQ[7:0] (BYTE#
= Low). The host system must drive the CE# and
WE# pins Low and drive OE# High for a valid write
operation to take place. All addresses are latched
on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of
WE# or CE#, whichever happens first.
The “Device Commands” section of this data sheet
provides details on the specific device commands
implemented in the HY29LV800.
Standby Operation
When the system is not reading or writing to the
device, it can place the HY29LV800 in the Standby
mode. In this mode, current consumption is greatly
reduced, and the data bus outputs are placed in
the high impedance state, independent of the OE#
input. The Standby mode can be invoked using
two methods.
The device enters the CE# Deep Standby mode
when the CE# and RESET# pins are both held at
VCC ± 0.3V. Note that this is a more restricted voltage range than VIH . If both CE# and RESET# are
held at VIH, but not within VCC ± 0.3V, the device
will be in the CE# Normal Standby mode, but the
standby current will be greater.
The device enters the RESET# Deep Standby
mode when the RESET# pin is held at VSS ± 0.3V.
If RESET# is held at VIL but not within VSS ± 0.3V,
the device will be in the RESET# Normal Standby
mode, but the standby current will be greater. See
Reset Operation for additional information.
The device requires standard access time (tCE) for
read access when the device is in either of the
standby modes, before it is ready to read data.
Note: If the device is deselected during an erase or
programming operation, it continues to draw active
current until the operation is completed.
Sleep Mode
The sleep mode automatically minimizes device
power consumption. This mode is automatically
8
entered when addresses remain stable for tACC +
30 ns (typical) and is independent of the state of
the CE#, WE#, and OE# control signals. Standard address access timings provide new data
when addresses are changed. While in sleep
mode, output data is latched and always available
to the system.
NOTE: Sleep mode is entered only when the device is
in Read mode. It is not entered if the device is executing
an automatic algorithm, if it is in Erase Suspend mode,
or during receipt of a command sequence.
Output Disable Operation
When the OE# input is at VIH, output data from the
device is disabled and the data bus pins are placed
in the high impedance state.
Reset Operation
The RESET# pin provides a hardware method of
resetting the device to reading array data. When
the RESET# pin is driven low for the minimum
specified period, the device immediately terminates any operation in progress, tri-states the data
bus pins, and ignores all read/write commands for
the duration of the RESET# pulse. The device also
resets the internal state machine to reading array
data. If an operation was interrupted by the assertion of RESET#, it should be reinitiated once
the device is ready to accept another command
sequence to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse as described in the Standby Operation section above.
If RESET# is asserted during a program or erase
operation, the RY/BY# pin remains Low (busy) until
the internal reset operation is complete, which requires a time of tREADY (during Automatic Algorithms). The system can thus monitor RY/BY# to
determine when the reset operation completes,
and can perform a read or write operation tRB after
RY/BY# goes High. If RESET# is asserted when
a program or erase operation is not executing (RY/
BY# pin is High), the reset operation is completed
within a time of tRP. In this case, the host can perform a read or write operation tRH after the RESET# pin returns High .
The RESET# pin may be tied to the system reset
signal. Thus, a system reset would also reset the
device, enabling the system to read the boot-up
firmware from the Flash memory.
Rev. 1.0/Nov. 01
HY29LV800
Sector Protect Operation
The hardware sector protection feature disables
both program and erase operations in any sector
or combination of sectors. This function can be
implemented either in-system or by using programming equipment.
The Sector Protect procedure requires VID on the
RESET# pin and uses standard microprocessor
bus cycle timing to implement sector protection.
The flow chart in Figure 1 illustrates the algorithm.
The HY29LV800 is shipped with all sectors unprotected. It is possible to determine whether a
sector is protected or unprotected. See the Electronic ID Mode section for details.
Sector Unprotect Operation
The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. This function can be
implemented either in-system or by using programming equipment. Note that to unprotect any sector, all unprotected sectors must first be protected
prior to the first sector unprotect write cycle. Also,
the unprotect procedure will cause all sectors to
become unprotected, thus, sectors that require
protection must be protected again after the unprotect procedure is run.
The Sector Unprotect procedure requires VID on
the RESET# pin and uses standard microprocessor bus cycle timing to implement sector unprotection. The flow chart in Figure 2 illustrates the
algorithm.
Temporary Sector Unprotect Operation
This feature allows temporary unprotection of previously protected sectors to allow changing the
data in-system. Sector Unprotect mode is activated
by setting the RESET# pin to VID. While in this
mode, formerly protected sectors can be programmed or erased by invoking the appropriate
commands (see Device Commands section).
Once VID is removed from RESET#, all the previously protected sectors are protected again. Figure 3 illustrates the algorithm.
Electronic ID Operation (High Voltage Method)
The Electronic ID mode provides manufacturer and
device identification and sector protection verification through codes output on DQ[15:0]. This
mode is intended primarily for programming equipment to automatically match a device to be pro-
START
Wait 150 us
R E S E T # = V IH
R E S E T # = V ID
Write 0x40 to Address
Write Reset Command
Wait 1 us
Read from Address
SECTOR PROTECT
COMPLETE
Write 0x60 to device
Data = 0x01?
NO
TRYCNT = 25?
YES
TRYCNT = 1
NO
YES
Increment TRYCNT
Set Address:
A[18:12] = Sector to Protect
A[6] = 0, A[1] = 1, A[0] = 0
DEVICE FAILURE
Protect Another
Sector?
NO
Write 0x60 to Address
YES
Figure 1. Sector Protect Algorithm
Rev. 1.0/Nov. 01
9
HY29LV800
START
(Note: All sectors must be
protected prior to
unprotecting any sector)
Set Address:
A[18:12] = Sector SNUM
A[6] = 1, A]1] = 1, A]0] = 0
TRYCNT = 1
SNUM = 0
R E S E T # = V IH
Write Reset Command
Write 0x40 to Address
R E S E T # = V ID
SECTOR UNPROTECT
COMPLETE
Read from Address
Wait 1 us
Data = 0x00?
NO
TRYCNT = 1000?
YES
Write 0x60 to device
NO
YES
Set Address:
A[6] = 1, A]1] = 1, A]0] = 0
Increment TRYCNT
SNUM = 18?
YES
DEVICE FAILURE
Write 0x60 to Address
NO
Wait 15 ms
SNUM = SNUM + 1
Figure 2. Sector Unprotect Algorithm
START
R E S E T # = V ID
(All protected sectors
become unprotected)
Perform Program or Erase
Operations
R E S E T # = V IH
(All previously protected
sectors return to protected
state)
TEMPORARY SECTOR
UNPROTECT COMPLETE
Figure 3. Temporary Sector Unprotect
Algorithm
grammed with its corresponding programming algorithm.
Two methods are provided for accessing the Electronic ID data. The first requires VID on address
pin A[9], with additional requirements for obtaining specific data items listed in Table 4. The Electronic ID data can also be obtained by the host
through specific commands issued via the command register, as described in the ‘Device Commands’ section of this data sheet.
While in the high-voltage Electronic ID mode, the
system may read at specific addresses to obtain
certain device identification and status information:
n A read cycle at address 0xXXX00 retrieves the
manufacturer code.
n A read cycle at address 0xXXX01 in Word
mode or 0xXXX02 in Byte mode returns the
device code.
n A read cycle containing a sector address (SA)
in A[18:12] and the address 0x02 in Word mode
or 0x04 in Byte mode, returns 0x01 if that sector is protected, or 0x00 if it is unprotected.
10
Rev. 1.0/Nov. 01
HY29LV800
DEVICE COMMANDS
Device operations are initiated by writing designated address and data command sequences into
the device. Addresses are latched on the falling
edge of WE# or CE#, whichever happens later.
Data is latched on the rising edge of WE# or CE#,
whichever happens first.
A command sequence is composed of one, two
or three of the following sub-segments: an unlock
cycle, a command cycle and a data cycle. Table 5
summarizes the composition of the valid command
sequences implemented in the HY29LV800, and
these sequences are fully described in Table 6 and
in the sections that follow.
Writing incorrect address and data values or writing them in the improper sequence resets the
HY29LV800 to the Read mode.
Reading Data
The device automatically enters the Read mode
after device power-up, after the RESET# input is
asserted and upon the completion of certain commands. Commands are not required to retrieve
data in this mode. See Read Operation section
for additional information.
Reset Command
Writing the Reset command resets the sectors to
the Read or Erase-Suspend mode. Address bits
are don’t cares for this command.
As described above, a Reset command is not normally required to begin reading array data. However, a Reset command must be issued in order
to read array data in the following cases:
n If the device is in the Electronic ID mode, a
Reset command must be written to return to
the Read mode. If the device was in the Erase
Suspend mode when the device entered the
Electronic ID mode, writing the Reset command
returns the device to the Erase Suspend mode.
Note: When in the Electronic ID bus operation mode,
the device returns to the Read mode when VID is removed
from the A[9] pin. The Reset command is not required
in this case.
n If DQ[5] (Exceeded Time Limit) goes High during a program or erase operation, a Reset command must be invoked to return the sectors to
Rev. 1.0/Nov. 01
Table 5. Composition of Command Sequences
Command
S eq u en ce
Number of Bus Cycles
Unlock Command
Data
Reset
0
1
0
Read
0
0
Note 1
Byte/Word Program
2
1
1
Unlock Bypass
Unlock Bypass
Reset
Unlock Bypass
Byte/Word Program
Chip Erase
2
1
0
0
1
1
0
1
1
4
1
1
Sector Erase
4
1
1 (Note 2)
Erase Suspend
0
1
0
Erase Resume
0
1
0
Electronic ID
2
1
Note 3
Notes:
1. Any number of Flash array read cycles are permitted.
2. Additional data cycles may follow. See text.
3. Any number of Electronic ID read cycles are permitted.
the Read mode (or to the Erase Suspend mode
if the device was in Erase Suspend when the
Program command was issued).
The Reset command may also be used to abort
certain command sequences:
n In a Sector Erase or Chip Erase command sequence, the Reset command may be written
at any time before erasing actually begins, including, for the Sector Erase command, between the cycles that specify the sectors to be
erased (see Sector Erase command description). This aborts the command and resets the
device to the Read mode. Once erasure begins, however, the device ignores the Reset
command until the operation is complete.
n In a Program command sequence, the Reset
command may be written between the sequence cycles before programming actually begins. This aborts the command and resets the
device to the Read mode, or to the Erase Suspend mode if the Program command sequence
is written while the device is in the Erase Suspend mode. Once programming begins, however, the device ignores the Reset command
until the operation is complete.
11
Byte
Word
Byte
Word
Byte
3
3
3
AAA
555
AAA
555
AAA
555
XXX
XXX
AAA
555
AAA
555
XXX
XXX
AAA
555
AAA
555
XXX
RA
Notes:
See next page for notes.
Legend:
X = Don’t Care
RA = Memory address of data to be read
RD = Data read from location RA during the read operation
Sector Protect Verify
Device Code
Manufacturer Code
Word
1
Erase Resume
1
6
6
2
2
3
4
5
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Erase Suspend 4
Sector Erase
Chip Erase
Unlock Bypass Program 8
Unlock Bypass Reset
Unlock Bypass
Normal Program
1
Reset 7
Word
0
AA
AA
AA
30
B0
AA
AA
A0
90
AA
AA
F0
RD
First
Write
Cycles Add
Data
Read
Electronic ID 6
12
Command Sequence
Table 6. HY29LV800 Command Sequences
55
55
55
55
55
PD
00
55
55
Data
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
Add
90
90
90
80
80
20
A0
Data
Third
555
2A A
555
2A A
Add
55
55
Data
SA
AAA
555
Add
DA (Top Boot), 5B (Bottom Boot)
30
10
Data
Sixth
22DA (Top Boot), 225B(Bottom Boot)
AD
AA
AA
PD
Data
Fifth
(SA)X02 00 = Unprotected Sector
(SA)X04 01 = Protected Sector
X 02
X 01
X 00
AAA
555
AAA
555
PA
Add
Fourth
PA = Address of the data to be programmed
PD = Data to be programmed at address PA
SA = Sector address of sector to be erased or verified (see Note 3 and Tables 1 and 2).
555
2A A
555
2A A
555
2A A
555
2A A
555
2A A
PA
XXX
555
2A A
555
2A A
Add
S eco n d
Bus Cycles 1, 2, 3
HY29LV800
Rev. 1.0/Nov. 01
HY29LV800
Notes for Table 6:
1. All values are in hexadecimal. DQ[15:8] are don’t care for unlock and command cycles.
2. All bus cycles are write operations unless otherwise noted.
3. Address is A[10:0] in Word mode and A[10:0, -1] in Byte mode. A[18:11] are don’t care except as follows:
• For RA and PA, A[18:11] are the upper address bits of the byte to be read or programmed.
• For the sixth cycle of Sector Erase, SA = A[18:12] are the sector address of the sector to be erased.
• For the fourth cycle of Sector Protect Verify, SA = A[18:12] are the sector address of the sector to be verified.
4. The Erase Suspend command is valid only during a sector erase operation. The system may read and program in nonerasing sectors, or enter the Electronic ID mode, while in the Erase Suspend mode.
5. The Erase Resume command is valid only during the Erase Suspend mode.
6. The fourth bus cycle is a read cycle.
7. The command is required only to return to the Read mode when the device is in the Electronic ID command mode. It must
also be issued to return to read mode if DQ[5] goes High during a program or erase operation. It is not required for normal
read operations.
8. The Unlock Bypass command is required prior to the Unlock Bypass Program command.
n The Reset command may be written between
the cycles in an Electronic ID command sequence to abort that command. As described
above, once in the Electronic ID mode, the
Reset command must be written to return to
the array Read mode.
Program Command
The system programs the device a word or byte
at a time by issuing the appropriate four-cycle program command sequence as shown in Table 6.
The sequence begins by writing two unlock cycles,
followed by the program setup command and,
lastly, the program address and data. This initiates the Automatic Program algorithm which automatically provides internally generated program
pulses and verifies the programmed cell margin.
The host is not required to provide further controls or timings during this operation. When the
Automatic Program algorithm is complete, the device returns to the array Read mode (or to the
Erase Suspend mode if the device was in Erase
Suspend when the Program command was issued). Several methods are provided to allow the
host to determine the status of the programming
operation, as described in the Write Operation
Status section.
Commands written to the device during execution
of the Automatic Program algorithm are ignored.
Note that a hardware reset immediately terminates
the programming operation. To ensure data integrity, the aborted Program command sequence
should be reinitiated once the reset operation is
complete.
Programming is allowed in any sequence. Only
erase operations can convert a stored “0” to a “1”.
Thus, a bit cannot be programmed from a “0” back
Rev. 1.0/Nov. 01
to a “1”. Attempting to do so may halt the operation and set DQ[5] to “1”, or cause the Data# Polling algorithm to indicate the operation was successful. However, a succeeding read will show
that the data is still “0”.
Figure 4 illustrates the programming procedure.
Unlock Bypass/Bypass Program/Bypass Reset
Commands
Unlock bypass provides a faster method for the
host system to program the device. As shown in
Table 6, the Unlock Bypass command sequence
consists of two unlock write cycles followed by a
third write cycle containing the Unlock Bypass
command, 0x20. In the Unlock Bypass mode, a
two-cycle Unlock Bypass Program command sequence is used instead of the standard four-cycle
Program sequence to invoke a programming operation. The first cycle in this sequence contains
the Unlock Bypass Program command, 0xA0, and
the second cycle specifies the program address
and data, thus eliminating the initial two unlock
cycles required in the standard Program command
sequence Additional data is programmed in the
same manner.
During the Unlock Bypass mode, only the Unlock
Bypass program and Unlock Bypass Reset commands are valid. To exit the Unlock Bypass mode,
the host must issue the two-cycle Unlock Bypass
Reset command sequence shown in Table 6. The
device then returns to the array Read mode.
Chip Erase Command
The Chip Erase command sequence consists of
two unlock cycles, followed by a set-up command,
two additional unlock cycles and then the Chip
Erase command. This sequence invokes the Au13
HY29LV800
START
Check Programming Status
(See Write Operation Status
Section)
NO
Enable Fast
Programming?
YES
DQ[5] Error Exit
Programming Verified
NO
Issue UNLOCK BYPASS
Command
Last Word/Byte
Done?
YES
Setup Next Address/Data for
Program Operation
NO
Unlock Bypass
Mode?
Issue NORMAL PROGRAM
Command
NO
Unlock Bypass
Mode?
YES
Issue UNLOCK BYPASS
RESET Command
YES
Issue UNLOCK BYPASS
PROGRAM Command
PROGRAMMING
COMPLETE
GO TO ERROR
RECOVERY PROCEDURE
Figure 4. Normal and Unlock Bypass Programming Procedures
tomatic Erase algorithm that automatically
preprograms and verifies the entire memory for
an all zero data pattern prior to electrical erase.
The host system is not required to provide any
controls or timings during these operations.
When the Automatic Erase algorithm is complete,
the device returns to the array Read mode. Several methods are provided to allow the host to
determine the status of the erase operation, as
described in the Write Operation Status section.
Commands written to the device during execution
of the Automatic Erase algorithm are ignored. Note
that a hardware reset immediately terminates the
chip erase operation. To ensure data integrity, the
aborted Chip Erase command sequence should
be reissued once the reset operation is complete.
Figure 5 illustrates the chip erase procedure.
START
Issue CHIP ERASE
Command Sequence
Check Erase Status
(See Write Operation Status
Section)
DQ[5] Error Exit
Normal Exit
CHIP ERASE COMPLETE
GO TO
ERROR RECOVERY
Figure 5. Chip Erase Procedure
14
Sector Erase Command
The Sector Erase command sequence consists
of two unlock cycles, followed by the Erase command, two additional unlock cycles and then the
sector erase data cycle, which specifies the sector to be erased. As described later in this section, multiple sectors can be specified for erasure
with a single command sequence. During sector
erase, all specified sectors are erased sequentially. The data in sectors not specified for erasure, as well as the data in any protected sectors,
even if specified for erasure, is not affected by the
sector erase operation.
The Sector Erase command sequence starts the
Automatic Erase algorithm, which preprograms
and verifies the specified unprotected sectors for
an all zero data pattern prior to electrical erase.
The device then provides the required number of
Rev. 1.0/Nov. 01
HY29LV800
internally generated erase pulses and verifies cell
erasure within the proper cell margins. The host
system is not required to provide any controls or
timings during these operations.
After the sector erase data cycle (the sixth bus
cycle) of the command sequence is issued, a sector erase time-out of 50 µs (min), measured from
the rising edge of the final WE# pulse in that bus
cycle, begins. During this time-out window, an additional sector erase data cycle, specifying the
sector address of another sector to be erased, may
be written into an internal sector erase buffer. This
buffer may be loaded in any sequence, and the
number of sectors specified may be from one sector to all sectors. The only restriction is that the
time between these additional data cycles must
be less than 50 µs, otherwise erasure may begin
before the last data cycle is accepted. To ensure
that all data cycles are accepted, it is recommended that host processor interrupts be disabled
during the time that the additional cycles are being issued and then be re-enabled afterwards.
If all sectors specified for erasing are protected,
the device returns to reading array data after approximately 100 µs. If at least one specified sector is not protected, the erase operation erases
the unprotected sectors, and ignores the command
for the sectors that are protected.
The system can monitor DQ[3] to determine if the
50 µs sector erase time-out has expired, as described in the Write Operation Status section. If
the time between additional sector erase data
cycles can be insured to be less than the timeout, the system need not monitor DQ[3].
Any command other than Sector Erase or Erase
Suspend during the time-out period resets the
device to reading array data. The system must
then rewrite the command sequence, including any
additional sector erase data cycles. Once the sector erase operation itself has begun, only the Erase
Suspend command is valid. All other commands
are ignored.
As for the Chip Erase command, note that a hardware reset immediately terminates the sector
erase operation. To ensure data integrity, the
aborted Sector Erase command sequence should
be reissued once the reset operation is complete.
When the Automatic Erase algorithm terminates,
the device returns to the array Read mode. Several methods are provided to allow the host to determine the status of the erase operation, as described in the Write Operation Status section.
START
Check Erase Status
(See Write Operation Status
Section)
DQ[5] Error Exit
Normal Exit
Write First Five Cycles of
SECTOR ERASE
Command Sequence
ERASE COMPLETE
GO TO
ERROR RECOVERY
Setup First (or Next) Sector
Address for Erase Operation
Write Last Cycle (SA/0x30)
of SECTOR ERASE
Command Sequence
Sectors which require erasure
but which were not specified in
this erase cycle must be erased
later using a new command
sequence
NO
Erase An
Additional Sector?
YES
Sector Erase
Time-out (DQ[3])
Expired?
YES
NO
Figure 6. Sector Erase Procedure
Rev. 1.0/Nov. 01
15
HY29LV800
Figure 6 illustrates the Sector Erase procedure.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system
to interrupt a sector erase operation to read data
from, or program data in, any sector not being
erased. The command causes the erase operation to be suspended in all sectors specified for
erasure. This command is valid only during the
sector erase operation, including during the 50 µs
time-out period at the end of the command sequence, and is ignored if it is issued during chip
erase or programming operations.
The HY29LV800 requires a maximum of 20 µs to
suspend the erase operation if the Erase Suspend
command is issued during sector erasure. However, if the command is written during the timeout, the time-out is terminated and the erase operation is suspended immediately. Once the erase
operation has been suspended, the system can
read array data from or program data to any sector not specified for erasure. Normal read and
write timings and command definitions apply.
Reading at any address within erase-suspended
sectors produces status data on DQ[7:0]. The host
can use DQ[7], or DQ[6] and DQ[2] together, to
determine if a sector is actively erasing or is erasesuspended. See the Write Operation Status section for information on these status bits.
After an erase-suspended program operation is
complete, the host can initiate another programming operation (or read operation) within non-suspended sectors. The host can determine the status of a program operation during the Erase-Suspended state just as in the standard programming
operation.
The host may also write the Electronic ID command sequence when the device is in the Erase
Suspend mode. The device allows reading Electronic ID codes even at addresses within erasing
sectors, since the codes are not stored in the
memory array. When the device exits the Electronic ID mode, the device reverts to the Erase
Suspend mode, and is ready for another valid operation. See Electronic ID Mode section for more
information.
16
The system must write the Erase Resume command to exit the Erase Suspend mode and continue the sector erase operation. Further writes of
the Resume command are ignored. Another Erase
Suspend command can be written after the device has resumed erasing.
Electronic ID Command
The Electronic ID mode provides manufacturer and
device identification and sector protection verification through identifier codes output on DQ[7:0].
This mode is intended primarily for programming
equipment to automatically match a device to be
programmed with its corresponding programming
algorithm.
Two methods are provided for accessing the Electronic ID data. The first requires VID on address
pin A[9], as described previously in the Device
Operations section.
The Electronic ID data can also be obtained by
the host by invoking the Electronic ID command,
as shown in Table 6. This method does not require VID. The Electronic ID command sequence
may be issued while the device is in the Read
mode or in the Erase Suspend Read mode, that
is, except while programming or erasing.
The Electronic ID command sequence is initiated
by writing two unlock cycles, followed by the Electronic ID command. The device then enters the
Electronic ID mode, and the system may read at
any address any number of times, without initiating another command sequence.
n A read cycle at address 0xXXX00 retrieves the
manufacturer code.
n A read cycle at address 0xXXX01 in Word
mode or 0xXXX02 in Byte mode returns the
device code.
n A read cycle containing a sector address (SA)
in A[18:12] and the address 0x02 in A[7:0] in
Word mode (or 0x04 in A[6:0, -1] in Byte mode)
returns 0x01 if that sector is protected, or 0x00
if it is unprotected.
The system must write the Reset command to exit
the Electronic ID mode and return to reading array data.
Rev. 1.0/Nov. 01
HY29LV800
Table 7. Write and Erase Operation Status Summary
Mode
Operation
DQ[7]
Programming in progress
Normal
Programming completed
0
5
Read within erase suspended
sector
Read within non-erase
Erase
Suspend suspended sector
Programming in progress 6
Programming completed
DQ[7]#
Data
Erase in progress
Erase completed
1
6
DQ[6]
Toggle
DQ[5]
0/1
2
4
Data
Toggle
2
Data
Data
Data
1
4
0/1
1
DQ[3]
DQ[2]
N/A
N/A
0
Data
Data
1
Toggle
0
4
1
1
3
RY/BY#
Data
Data
Data
No toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
DQ[7]#
Toggle
0/1 2
N/A
N/A
0
4
Data
Data
Data
1
Data
Data
Notes:
1. A valid address is required when reading status information. See text for additional information.
2. DQ[5] status switches to a ‘1’ when a program or erase operation exceeds the maximum timing limit.
3. A ‘1’ during sector erase indicates that the 50 µs time-out has expired and active erasure is in progress. DQ[3] is not
applicable to the chip erase operation.
4. Equivalent to ‘No Toggle’ because data is obtained in this state.
5. Data (DQ[7:0]) = 0xFF immediately after erasure.
6. Programming can be done only in a non-suspended sector (a sector not specified for erasure).
WRITE OPERATION STATUS
The HY29LV800 provides a number of facilities to
determine the status of a program or erase operation. These are the RY/BY# (Ready/Busy#)
pin and certain bits of a status word which can be
read from the device during the programming and
erase operations. Table 7 summarizes the status
indications and further detail is provided in the
subsections which follow.
RY/BY# - Ready/Busy#
RY/BY# is an open-drain output pin that indicates
whether a programming or erase Automatic Algorithm is in progress or has completed. A pull-up
resistor to VCC is required for proper operation. RY/
BY# is valid after the rising edge of the final WE#
pulse in the corresponding command sequence.
If the output is Low (busy), the device is actively
erasing or programming, including programming
while in the Erase Suspend mode. If the output is
High (ready), the device has completed the operation and is ready to read array data in the normal or Erase Suspend modes, or it is in the
Standby mode.
DQ[7] - Data# Polling
The Data# (“Data Bar”) Polling bit, DQ[7], indicates
to the host system whether an Automatic AlgoRev. 1.0/Nov. 01
rithm is in progress or completed, or whether the
device is in Erase Suspend mode. Data# Polling
is valid after the rising edge of the final WE# pulse
in the Program or Erase command sequence.
The system must do a read at the program address to obtain valid programming status information on this bit. While a programming operation is
in progress, the device outputs the complement
of the value programmed to DQ[7]. When the programming operation is complete, the device outputs the value programmed to DQ[7]. If a program operation is attempted within a protected
sector, Data# Polling on DQ[7] is active for approximately 1 µs, then the device returns to reading array data.
The host must read at an address within any nonprotected sector specified for erasure to obtain
valid erase status information on DQ[7]. During
an erase operation, Data# Polling produces a “0”
on DQ[7]. When the erase operation is complete,
or if the device enters the Erase Suspend mode,
Data# Polling produces a “1” on DQ[7]. If all sectors selected for erasing are protected, Data#
Polling on DQ[7] is active for approximately 100
µs, then the device returns to reading array data.
If at least one selected sector is not protected, the
erase operation erases the unprotected sectors,
17
HY29LV800
and ignores the command for the specified sectors that are protected.
erase time-out. The system may use either OE#
or CE# to control the read cycles.
When the system detects that DQ[7] has changed
from the complement to true data (or “0” to “1” for
erase), it should do an additional read cycle to read
valid data from DQ[7:0]. This is because DQ[7]
may change asynchronously with respect to the
other data bits while Output Enable (OE#) is asserted low.
Successive read cycles at any address during an
Automatic Program algorithm operation (including
programming while in Erase Suspend mode)
cause DQ[6] to toggle. DQ[6] stops toggling when
the operation is complete. If a program address
falls within a protected sector, DQ[6] toggles for
approximately one µs after the program command
sequence is written, then returns to reading array
data.
Figure 7 illustrates the Data# Polling test algorithm.
DQ[6] - Toggle Bit I
Toggle Bit I on DQ[6] indicates whether an Automatic Program or Erase algorithm is in progress
or complete, or whether the device has entered
the Erase Suspend mode. Toggle Bit I may be read
at any address, and is valid after the rising edge
of the final WE# pulse in the Program or Erase
command sequence, including during the sector
START
Read DQ[7:0]
at Valid Address (Note 1)
Test for DQ[7] = 1?
for Erase Operation
DQ[7] = Data?
YES
NO
NO
DQ[5] = 1?
YES
Read DQ[7:0]
at Valid Address (Note 1)
Test for DQ[7] = 1?
for Erase Operation
DQ[7] = Data?
(Note 2)
YES
NO
PROGRAM/ERASE
EXCEEDED TIME ERROR
PROGRAM/ERASE
COMPLETE
Notes:
1. During programming , the program address. During sector erase , an
address within any non-protected sector specified for erasure. During
chip erase , an address within any non-protected sector.
2. Recheck DQ[7] since it may change asynchronously to DQ[5].
Figure 7. Data# Polling Test Algorithm
18
While the Automatic Erase algorithm is operating,
successive read cycles at any address cause
DQ[6] to toggle. DQ[6] stops toggling when the
erase operation is complete or when the device is
placed in the Erase Suspend mode. The host may
use DQ[2] to determine which sectors are erasing
or erase-suspended (see below). After an Erase
command sequence is written, if all sectors selected for erasing are protected, DQ[6] toggles for
approximately 100 µs, then returns to reading array data. If at least one selected sector is not protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors that are protected.
DQ[2] - Toggle Bit II
Toggle Bit II, DQ[2], when used with DQ[6], indicates whether a particular sector is actively erasing or whether that sector is erase-suspended.
Toggle Bit II is valid after the rising edge of the
final WE# pulse in the command sequence. The
device toggles DQ[2] with each OE# or CE# read
cycle.
DQ[2] toggles when the host reads at addresses
within sectors that have been specified for erasure, but cannot distinguish whether the sector is
actively erasing or is erase-suspended. DQ[6],
by comparison, indicates whether the device is actively erasing or is in Erase Suspend, but cannot
distinguish which sectors are specified for erasure.
Thus, both status bits are required for sector and
mode information.
Figure 8 illustrates the operation of Toggle Bits I
and II.
DQ[5] - Exceeded Timing Limits
DQ[5] is set to a ‘1’ when the program or erase
time has exceeded a specified internal pulse count
Rev. 1.0/Nov. 01
HY29LV800
START
DQ[5] = 1?
Read DQ[7:0]
at Valid Address (Note 1)
NO
Read DQ[7:0]
YES
Read DQ[7:0]
at Valid Address (Note 1)
YES
NO
DQ[6] Toggled?
NO
(Note 4)
NO
(Note 3)
Read DQ[7:0]
at Valid Address (Note 1)
Read DQ[7:0]
DQ[6] Toggled?
(Note 2)
DQ[2] Toggled?
NO
YES
YES
PROGRAM/ERASE
COMPLETE
PROGRAM/ERASE
EXCEEDED TIME ERROR
SECTOR BEING READ
IS IN ERASE SUSPEND
SECTOR BEING READ
IS NOT IN ERASE SUSPEND
Notes:
1. During programming, the program address.
During sector erase, an address within any sector scheduled for erasure.
2. Recheck DQ[6] since toggling may stop at the same time as DQ[5] changes from 0 to 1.
3. Use this path if testing for Program/Erase status.
4. Use this path to test whether sector is in Erase Suspend mode.
Figure 8. Toggle Bit I and II Test Algorithm
limit. This is a failure condition that indicates that
the program or erase cycle was not successfully
completed. DQ[5] status is valid only while DQ[7]
or DQ[6] indicate that the Automatic Algorithm is
in progress.
The DQ[5] failure condition will also be signaled if
the host tries to program a ‘1’ to a location that is
previously programmed to ‘0’, since only an erase
operation can change a ‘0’ to a ‘1’.
For both of these conditions, the host must issue
a Reset command to return the device to the Read
mode.
DQ[3] - Sector Erase Timer
After writing a Sector Erase command sequence,
the host may read DQ[3] to determine whether or
not an erase operation has begun. When the
sector erase time-out expires and the sector erase
operation commences, DQ[3] switches from a ‘0’
Rev. 1.0/Nov. 01
to a ‘1’. Refer to the “Sector Erase Command”
section for additional information. Note that the
sector erase timer does not apply to the Chip Erase
command.
After the initial Sector Erase command sequence
is issued, the system should read the status on
DQ[7] (Data# Polling) or DQ[6] (Toggle Bit I) to
ensure that the device has accepted the command
sequence, and then read DQ[3]. If DQ[3] is a ‘1’,
the internally controlled erase cycle has begun and
all further sector erase data cycles or commands
(other than Erase Suspend) are ignored until the
erase operation is complete. If DQ[3] is a ‘0’, the
device will accept a sector erase data cycle to mark
an additional sector for erasure. To ensure that
the data cycles have been accepted, the system
software should check the status of DQ[3] prior to
and following each subsequent sector erase data
cycle. If DQ[3] is high on the second status check,
the last data cycle might not have been accepted.
19
HY29LV800
HARDWARE DATA PROTECTION
The HY29LV800 provides several methods of protection to prevent accidental erasure or programming which might otherwise be caused by spurious system level signals during VCC power-up and
power-down transitions, or from system noise.
These methods are described in the sections that
follow.
Command Sequences
Commands that may alter array data require a
sequence of cycles as described in Table 6. This
provides data protection against inadvertent writes.
Low VCC Write Inhibit
To protect data during VCC power-up and powerdown, the device does not accept write cycles
when VCC is less than VLKO (typically 2.4 volts). The
command register and all internal program/erase
circuits are disabled, and the device resets to the
Read mode. Writes are ignored until VCC is greater
than VLKO. The system must provide the proper
signals to the control pins to prevent unintentional
writes when VCC is greater than VLKO.
20
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#,
CE# or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by asserting any one of
the following conditions: OE# = VIL , CE# = VIH, or
WE# = VIH. To initiate a write cycle, CE# and WE#
must be a logical zero while OE# is a logical one.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power
up, the device does not accept commands on the
rising edge of WE#. The internal state machine is
automatically reset to the Read mode on powerup.
Sector Protection
Additional data protection is provided by the
HY29LV800’s sector protect feature, described
previously, which can be used to protect sensitive
areas of the Flash array from accidental or unauthorized attempts to alter the data.
Rev. 1.0/Nov. 01
HY29LV800
ABSOLUTE MAXIMUM RATINGS 4
Symbol
TSTG
TBIAS
VIN2
IOS
Parameter
Storage Temperature
Ambient Temperature with Power Applied
Voltage on Pin with Respect to VSS :
VC C 1
A[9], OE#, RESET# 2
All Other Pins 1
Output Short Circuit Current 3
Value
Unit
-65 to +150
-65 to +125
ºC
ºC
-0.5 to +4.0
-0.5 to +12.5
-0.5 to VCC +0.5
200
V
V
V
mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may undershoot VSS to
-2.0V for periods of up to 20 ns. See Figure 9. Maximum DC voltage on input or I/O pins is VCC + 0.5 V. During voltage
transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 10.
2. Minimum DC input voltage on pins A[9], OE#, and RESET# is -0.5 V. During voltage transitions, A[9], OE#, and RESET#
may undershoot VSS to –2.0 V for periods of up to 20 ns. See Figure 9. Maximum DC input voltage on pin A[9] is +12.5 V
which may overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output at a time may be shorted to VSS. Duration of the short circuit should be less than one second.
4. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS 1
Symbol
TA
V CC
Parameter
Ambient Operating Temperature:
Commercial Temperature Devices
Industrial Temperature Devices
Operating Supply Voltage:
-55 Version
Other Versions
Value
Unit
0 to +70
-40 to +85
ºC
ºC
+3.0 to +3.6
+2.7 to +3.6
V
V
Notes:
1. Recommended Operating Conditions define those limits between which the functionality of the device is guaranteed.
20 ns
20 ns
20 ns
V C C + 2.0 V
0.8 V
- 0.5 V
V C C + 0.5 V
2.0 V
- 2.0 V
20 ns
Figure 9. Maximum Undershoot Waveform
Rev. 1.0/Nov. 01
20 ns
20 ns
Figure 10. Maximum Overshoot Waveform
21
HY29LV800
DC CHARACTERISTICS
Parameter
Description
ILI
Input Load Current
A[9] Input Load Current
ILIT
Output Leakage Current
ILO
ICC1
ICC2
VCC Active Read Current 1
3, 4
VID
VCC Active Write Current
VCC CE# Controlled Deep
Standby Current
VCC RESET# Controlled Deep
Standby Current
Automatic Sleep Mode
Current 5,
VCC CE# Controlled Normal
Standby Current 2
VCC RESET# Controlled
Normal Standby Current 2
Input Low Voltage
Input High Voltage
Voltage for Electronic ID and
Temporary Sector Unprotect
VOL
Output Low Voltage
ICC3
ICC4
ICC5
ICC6
ICC7
VIL
VIH
VOH1
Output High Voltage
VOH2
V LK O
Low VCC Lockout Voltage4
Test Setup 2
VIN = VSS to VCC
A[9] = 12.5 V
VOUT = VSS to VCC
CE# = VIL,
5 MHz
OE# = VIH,
1 MHz
Byte Mode
CE# = VIL,
5 MHz
OE# = VIH,
1 MHz
Word Mode
Min
Typ
Max
±1.0
35
±1.0
Unit
µA
µA
µA
7
12
mA
2
4
mA
7
12
mA
2
4
mA
15
30
mA
0.2
5
µA
RESET# = VSS ± 0.3 V
0.2
5
µA
VIH = VCC ± 0.3 V,
VIL = VSS ± 0.3 V
0.2
5
µA
CE# = RESET# = VIH
1
mA
RESET# = VIL
1
mA
-0.5
0.7 x VCC
0.8
VCC + 0.3
V
V
11.5
12.5
V
0.45
V
CE# = VIL, OE# = VIH
CE# = VCC ± 0.3 V,
RESET# = VCC ± 0.3 V
VCC = 3.3V
VCC = VCC Min,
IOL = 4.0 mA
VCC = VCC Min,
IOH = -2.0 mA
VCC = VCC Min,
IOH = -100 µA
0.85 x VCC
V
VCC - 0.4
V
2.3
2.5
V
Notes:
1. The ICC current is listed is typically less than 2 mA/MHz with OE# at VIH. Typical VCC is 3.0 V.
2. All specifications are tested with VCC = VCC Max unless otherwise noted.
3. ICC active while the Automatic Erase or Automatic Program algorithm is in progress.
4. Not 100% tested.
5. Automatic sleep mode is enabled when addresses remain stable for tACC + 30 ns (typical).
22
Rev. 1.0/Nov. 01
HY29LV800
DC CHARACTERISTICS
Zero Power Flash
20
Supply Current in mA
15
10
5
0
0
500
1000
1500
2000
Time in ns
2500
3000
3500
4000
Note: Addresses are switching at 1 MHz.
Figure 11. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
8
3.6 V
Supply Current in mA
6
2.7 V
4
2
0
1
2
3
4
5
Frequency in MHz
Note: T = 25 °C.
Figure 12. Typical ICC1 Current vs. Frequency
Rev. 1.0/Nov. 01
23
HY29LV800
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUT S
OUT PUT S
Steady
Changing from H to L
Changing from L to H
Don't Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Centerline is High Impedance State
(High Z)
TEST CONDITIONS
Table 12. Test Specifications
+ 3.3V
Test
Condition
Output Load
2.7
KOhm
Output Load Capacitance (CL)
- 70
- 90
- 55
1 TTL Gate
30
100
Input Rise and Fall Times
DEVICE
UNDER
TEST
CL
6.2
KOhm
Figure 13. Test Setup
All diodes
are
1N3064
or
equivalent
Unit
pF
5
ns
Input Signal Low Level
0.0
V
Input Signal High Level
3.0
V
1.5
V
1.5
V
Low Timing Measurement
Signal Level
High Timing Measurement
Signal Level
Note: Timing measurements are made at the reference levels specified above regardless of where the illustrations in
the timing diagrams appear to indicate the measurement is
made
3.0 V
Input
1.5 V
Measurement Level
1.5 V
Output
0.0 V
Figure 14. Input Waveforms and Measurement Levels
24
Rev. 1.0/Nov. 01
HY29LV800
AC CHARACTERISTICS
Read Operations
Parameter
Description
JE D E C
Std
tAVAV
tRC
Read Cycle Time 1
tAVQV
tACC
Address to Output Delay
tELQV
tEHQZ
tGLQV
tGHQZ
tCE
tDF
tOE
tDF
Chip Enable to Output Delay
Chip Enable to Output High Z 1
Output Enable to Output Delay
Output Enable to Output High Z 1
Read
Output Enable
Toggle and
Hold Time 1
Data# Polling
Output Hold Time from Addresses, CE#
or OE#, Whichever Occurs First 1
tOEH
tAXQX
tOH
Speed Option
Test Setup
CE# = VIL
OE# = VIL
OE# = VIL
CE# = VIL
Unit
- 55
-70
- 90
Min
55
70
90
ns
Max
55
70
90
ns
Max
Max
Max
Max
Min
55
25
30
25
70
25
30
25
0
90
30
35
30
ns
ns
ns
ns
ns
Min
10
ns
Min
0
ns
Notes:
1. Not 100% tested.
tR C
Addresses Stable
Addresses
tA C C
CE#
tO E
OE#
tO E H
WE#
Outputs
tD F
tC E
tO H
Output Valid
RESET#
RY/BY#
0 V
Figure 15. Read Operation Timings
Rev. 1.0/Nov. 01
25
HY29LV800
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JE D E C
Description
Std
tREADY
tREADY
tRP
tRH
tRPD
tRB
Speed Option
Test Setup
RESET# Pin Low (During Automatic
Algorithms) to Read or Write 1
RESET# Pin Low (NOT During
Automatic Algorithms) to Read or Write 1
RESET# Pulse Width
RESET# High Time Before Read 1
RESET# Low to Standby Mode
RY/BY# Recovery Time
- 55
- 70
- 90
Unit
Max
20
µs
Max
500
ns
Min
Min
Max
Min
500
50
20
0
ns
ns
µs
ns
Notes:
1. Not 100% tested.
RY/BY#
0V
CE#, OE#
tR H
RESET#
tR P
t Ready
Reset Timings NOT During Automatic Algorithms
t Ready
RY/BY#
tRB
CE#, OE#
RESET#
tR P
Reset Timings During Automatic Algorithms
Figure 16. RESET# Timings
26
Rev. 1.0/Nov. 01
HY29LV800
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
JE D E C
Std
tELFL
tELFH
tFLQZ
tFHQV
Speed Option
Description
CE# to BYTE# Switching Low
CE# to BYTE# Switching High
BYTE# Switching Low to Output High-Z
BYTE# Switching High to Output Active
- 50
- 70
25
55
5
5
25
70
Max
Max
Max
Min
- 90
Unit
30
90
ns
ns
ns
ns
CE#
OE#
BYTE#
BYTE#
switching
from word to
byte mode
DQ[14:0]
tELFL
Data Output DQ[14:0]
DQ[15]/A-1
Output DQ[15]
Data Output DQ[7:0]
Address Input A-1
tF L Q Z
BYTE#
switching
from byte to
word mode
BYTE#
DQ[14:0]
Data Output DQ[7:0]
DQ[15]/A-1
Data Output DQ[14:0]
Address Input A-1
tE L F H
Data Output DQ[15]
tF H Q V
Figure 17. BYTE# Timings for Read Operations
CE#
Falling edge of the last WE# signal
WE#
t S E T (t A S )
BYTE#
t H O L D (t A H )
Note: Refer to the Program/Erase Operations table for tAS and tAH specifications.
Figure 18. BYTE# Timings for Write Operations
Rev. 1.0/Nov. 01
27
HY29LV800
AC CHARACTERISTICS
Program and Erase Operations
Parameter
JE D E C
Std
tAVAV
tAVWL
tWLAX
tDVWH
tWHDX
tGHWL
tELWL
tWHEH
tWLWH
tWHWL
tWC
tAS
tAH
tDS
tDH
tGHWL
tCS
tCH
tWP
tWPH
Speed Option
Description
Write Cycle Time 1
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Byte Mode
tWHWH1
tWHWH1 Programming Operation
1, 2, 3
Word Mode
Byte Mode
Chip Programming Operation 1, 2, 3, 5
Word Mode
tWHWH2
tWHWH2 Sector Erase Operation 1, 2, 4
tWHWH3
tWHWH3 Chip Erase Operation 1, 2, 4
Erase and Program Cycle Endurance 1
tVCS
tRB
tBUSY
VCC Setup Time 1
Recovery Time from RY/BY#
WE# High to RY/BY# Delay
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Typ
Max
- 55
- 70
- 90
55
70
0
45
35
0
0
0
0
35
30
9
300
11
360
9
27
5.8
17
0.5
10
90
35
35
35
45
45
35
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
se c
se c
se c
se c
se c
se c
Typ
10
se c
Typ
Min
Min
Min
Min
1,000,000
100,000
50
0
90
cycles
cycles
µs
ns
ns
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25 °C, VCC = 3.0 volts, 100,000 cycles. In addition,
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case conditions of 90 °C, VCC = 2.7 volts (3.0 volts for - 55 version), 100,000 cycles.
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
command. See Table 6 for further information on command sequences.
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes are
programmed to 0x00 before erasure.
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most
bytes/words program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the
maximum byte/word program time specified is exceeded. See Write Operation Status section for additional information.
28
Rev. 1.0/Nov. 01
HY29LV800
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tW C
Addresses
tA S
0x555
Read Status Data (last two cycles)
tA H
PA
PA
PA
CE#
tG H W L
OE#
tC H
tW P
WE#
tC S
tW P H
tD S
tW H W H 1
tD H
0xA0
Data
PD
Status
tB U S Y
D OUT
tR B
RY/BY#
V CC
tV C S
Notes:
1. PA = Program Address, PD = Program Data, DOUT is the true data at the program address.
2. Commands shown are for Word mode operation.
3. VCC shown only to illustrate tVCS measurement references. It cannot occur as shown during a valid command sequence.
Figure 19. Program Operation Timings
Rev. 1.0/Nov. 01
29
HY29LV800
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tW C
Addresses
tA S
0x2AA
Read Status Data (last two cycles)
tA H
SA
VA
VA
Address = 0x555
for chip erase
CE#
tG H W L
OE#
tC H
tW P
WE#
tC S
tW P H
tD S
Data = 0x10
for chip erase
tD H
Data
0x55
0x30
t W H W H 2 or
tW H W H 3
Status
tB U S Y
D OUT
tR B
RY/BY#
V CC
tV C S
Notes:
1. SA =Sector Address (for sector erase), VA = Valid Address for reading status data (see Write Operation Status section),
DOUT is the true data at the read address.(0xFF after an erase operation).
2. Commands shown are for Word mode operation.
3. VCC shown only to illustrate tVCS measurement references. It cannot occur as shown during a valid command sequence.
Figure 20. Sector/Chip Erase Operation Timings
30
Rev. 1.0/Nov. 01
HY29LV800
AC CHARACTERISTICS
tR C
VA
Addresses
VA
VA
tA C C
tC H
CE#
tC E
OE#
tD F
tO E H
WE#
tO E
tO H
DQ[7]
Complement
DQ[6:0]
Status Data
Complement
Status Data
True
Valid Data
Data
Valid Data
tB U S Y
RY/BY#
Notes:
1. VA = Valid Address for reading Data# Polling status data (see Write Operation Status section).
2. Illustration shows first status cycle after command sequence, last status read cycle and array data read cycle.
Figure 21. Data# Polling Timings (During Automatic Algorithms)
tR C
VA
Addresses
VA
VA
VA
Valid Data
tA C C
tC H
CE#
tC E
OE#
tD F
tO E H
WE#
tO E
DQ[6], [2]
tB U S Y
tO H
Valid Status
Valid Status
Valid Status
(first read)
(second read)
(stops toggling)
RY/BY#
Notes:
1. VA = Valid Address for reading Toggle Bits (DQ[2], DQ[6]) status data (see Write Operation Status section).
2. Illustration shows first two status read cycles after command sequence, last status read cycle and array data read cycle.
Figure 22. Toggle Polling Timings (During Automatic Algorithms)
Rev. 1.0/Nov. 01
31
HY29LV800
AC CHARACTERISTICS
Enter Automatic
Erase
Erase
Suspend
WE#
Erase
Erase
Suspend
Read
Enter Erase
Suspend
Program
Erase
Resume
Erase
Suspend
Program
Erase
Suspend
Read
Erase
Complete
Erase
DQ[6]
DQ[2]
Notes:
1. The system may use CE# or OE# to toggle DQ[2] and DQ[6]. DQ[2] toggles only when read at an address within an
erase-suspended sector.
Figure 23. DQ[2] and DQ[6] Operation
Sector Protect and Unprotect, Temporary Sector Unprotect
Parameter
JE D E C
Std
tVIDR
tRSP
tVRES
tPROT
tUNPR
Speed Option
Description
VID Transition Time for Temporary Sector Unprotect 1
RESET# Setup Time for
Temporary Sector Unprotect
RESET# Setup Time for Sector Protect and
Unprotect
Sector Protect Time
Sector Unprotect Time
- 55
- 70
- 90
Unit
Min
500
ns
Min
4
µs
Min
1
µs
Max
Max
150
15
µs
ms
Notes:
1. Not 100% tested.
V ID
RESET#
0 or 3V
0 or 3V
t VIDR
t VIDR
CE#
WE#
tR S P
RY/BY#
Figure 24. Temporary Sector Unprotect Timings
32
Rev. 1.0/Nov. 01
HY29LV800
AC CHARACTERISTICS
V ID
V IH
RESET#
SA, A[6],
A[1], A[0]
Don't Care
Valid *
Valid *
Sector Protect/Unprotect
Data
0x60
Verify
0x60
tV R E S
Valid *
0x40
Status
tP R O T
CE#
tU N P R
WE#
OE#
Note: For Sector Protect, A[6] = 0, A[1] = 1, A[0] = 0. For Sector Unprotect, A[6] = 1, A[1] = 1, A[0] = 0.
Figure 25. Sector Protect and Unprotect Timings
Alternate CE# Controlled Program and Erase Operations 2
Parameter
JE D E C
Std
tAVAV
tAVEL
tELAX
tDVEH
tEHDX
tGHEL
tWLEL
tEHWH
tELEH
tEHEL
tWC
tAS
tAH
tDS
tDH
tGHEL
tWS
tWH
tCP
tCPH
tBUSY
Speed Option
Description
Write Cycle Time 1
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
CE# to RY/BY# Delay
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
- 55
- 70
- 90
55
70
0
45
35
0
0
0
0
35
30
90
90
45
35
35
45
45
35
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
1. Not 100% tested.
2. See Program and Erase Operations table for program and erase characteristics.
Rev. 1.0/Nov. 01
33
HY29LV800
AC CHARACTERISTICS
0x555 for Program
0x2AA for Erase
PA for Program
SA for Sector Erase
0x555 for Chip Erase
Addresses
VA
tW C
tA S
tA H
WE#
tG H E L
tW H
OE#
tW S
tC P
tC P H
t W H W H 1 or t W H W H 2 or t W H W H 3
CE#
tD S
tD H
tB U S Y
Data
Status
0xA0 for Program
0x55 for Erase
D OUT
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
RY/BY#
tR H
RESET#
Notes:
1. PA = program address, PD = program data, VA = Valid Address for reading program or erase status (see Write Operation Status section), DOUT = array data read at VA.
2.
Illustration shows the last two cycles of the program or erase command sequence and the last status read cycle.
3.
Word mode addressing shown.
4.
RESET# shown only to illustrate tRH measurement references. It cannot occur as shown during a valid command
sequence.
Figure 26. Alternate CE# Controlled Write Operation Timings
34
Rev. 1.0/Nov. 01
HY29LV800
Latchup Characteristics
Description
Minimum
Maximum
Unit
- 1.0
12.5
V
- 1.0
- 100
VCC + 1.0
100
V
mA
Input voltage with respect to VSS on all pins except I/O
pins(including A[9], OE# and RESET#)
Input voltage with respect to VSS on all I/O pins
VCC Current
Notes:
1. Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
TSOP and PSOP Pin Capacitance
Symbol
CIN
Parameter
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
Test Setup
Typ
Max
Unit
VIN = 0
6
7.5
pF
VOUT = 0
8.5
12
pF
VIN = 0
7.5
9
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions: TA = 25 ºC, f = 1.0 MHz.
Data Retention
Parameter
Minimum Pattern Data Retention Time
Rev. 1.0/Nov. 01
Test Conditions
Minimum
Unit
150 ºC
10
Years
125 ºC
20
Years
35
HY29LV800
PACKAGE DRAWINGS
Physical Dimensions
TSOP48 - 48-pin Thin Small Outline Package (measurements in millimeters)
0.95
1.05
Pin 1 ID
1
48
0.50 BSC
11.90
12.10
24
25
18.30
18.50
0.05
0.15
19.80
20.20
0.08
0.20
1.20
MAX
0.10
0.21
o
0.25MM (0.0098") BSC
0
o
5
0.50
0.70
PSOP44 - 44-pin Plastic Small Outline Package (measurements in millimeters)
23
44
15.70
16.30
13.10
13.50
0.10
0.21
O
0
O
8
1
0.60
1.00
22
1.27 NOM.
28.00
28.40
2.17
2.45
2.80
MAX.
SEATING PLANE
0.35
0.50
36
0.10
0.35
Rev. 1.0/Nov. 01
HY29LV800
PACKAGE DRAWINGS
Physical Dimensions
FBGA48 - 48-Ball Fine-Pitch Ball Grid Array, 6 x 8 mm (measurements in millimeters)
Note: Unless otherwise specified, tolerance = ± 0.05
0.10 C
8.00 ± 0.10
A
1.80
± 0.10
A1 CORNER
INDEX AREA
2.10 ± 0.10
C
6.00 ± 0.10
0.10 C
B
C
0.10 C
0.76
TYP
1.10
MAX
Seating
Plane
0.20
MIN
C
0.08 C
5.60 BSC
H
G
F
E
D
C
B
A
6
5
0.40
BSC
4
C
4.00 BSC
3
2
1
0.80 TYP
Ø 0.15 M C A B
Ø 0.08 M C
Rev. 1.0/Nov. 01
Pin A1
Index Mark
0.40
BSC
Ø 0.30 ± 0.05
C
37
HY29LV800
ORDERING INFORMATION
Hynix products are available in several speeds, packages and operating temperature ranges. The
ordering part number is formed by combining a number of fields, as indicated below. Refer to the ‘Valid
Combinations’ table, which lists the configurations that are planned to be supported in volume. Please
contact your local Hynix representative or distributor to confirm current availability of specific configurations and to determine if additional configurations have been released.
HY29LV800 X
X
-
X
X
X
SPECIAL INSTRUCTIONS
TEMPERATURE RANGE
Blank = Commercial ( 0 to +70 °C)
I = Industrial (-40 to +85 °C)
SPEED OPTION
55 = 55 ns
70 = 70 ns
90 = 90 ns
PACKAGE TYPE
T = 48-Pin Thin Small Outline Package (TSOP)
F = 48-Ball Fine-Pitch Ball Grid Array (FBGA), 8 x 9 mm
G = 44-Pin Plastic Small Outline Package (PSOP)
BOOT BLOCK LOCATION
T = Top Boot Block Option
B = Bottom Boot Block Option
DEVICE NUMBER
HY29LV800 = 8 Megabit (1M x 8/512K x 16) CMOS 3 Volt-Only
Sector Erase Flash Memory
VALID COMBINATIONS
P ackag e an d S p eed
PSOP 2
TSOP
FBGA
Temperature
55 n s
70 n s
90 n s
55 n s
70 n s
90 n s
55 n s
70 n s
90 n s
Commercial
Industrial
T-55
T-55I
T-70
T-70I
T-90
T-90I
G-55
G-55I
G-70
G-70I
G-90
G-90I
F 55
F-55I
F-70
F-70I
F-90
F-90I
Note:
1. The complete part number is formed by appending the suffix shown in the table above to the Device Number. For
example, the part number for a 90 ns, top boot block, Industrial temperature range device in the TSOP package is
HY29LV800TT-90I.
2. Contact your Hynix sales representative or authorized distributor to determine availability of this package version.
38
Rev. 1.0/Nov. 01
HY29LV800
Rev. 1.0/Nov. 01
39
HY29LV800
Important Notice
© 2001 by Hynix Semiconductor America. All rights reserved.
No part of this document may be copied or reproduced in any
form or by any means without the prior written consent of Hynix
Semiconductor Inc. or Hynix Semiconductor America (collectively “Hynix”).
tions of Sale only. Hynix makes no warranty, express, statutory, implied or by description, regarding the information set
forth herein or regarding the freedom of the described devices
from intellectual property infringement. Hynix makes no warranty of merchantability or fitness for any purpose.
The information in this document is subject to change without
notice. Hynix shall not be responsible for any errors that may
appear in this document and makes no commitment to update
or keep current the information contained in this document.
Hynix advises its customers to obtain the latest version of the
device specification to verify, before placing orders, that the
information being relied upon by the customer is current.
Hynix’s products are not authorized for use as critical components in life support devices or systems unless a specific written agreement pertaining to such intended use is executed
between the customer and Hynix prior to use. Life support
devices or systems are those which are intended for surgical
implantation into the body, or which sustain life whose failure to
perform, when properly used in accordance with instructions
for use provided in the labeling, can be reasonably expected to
result in significant injury to the user.
Devices sold by Hynix are covered by warranty and patent indemnification provisions appearing in Hynix Terms and Condi-
Revision Record
Rev.
Date
1.0
10/01
Details
Initial release.
Flash Memory Business Unit, Korea
Hynix Semiconductor Inc.
891, Daechi-dong
Kangnam-gu
Seoul, Korea
Flash Memory Business Unit, HQ
Hynix Semiconductor Inc.
3101 North First Street
San Jose, CA 95134
USA
Telephone: +82-2-3459-5980
Fax: +82-2-3459-5988
Telephone: (408) 232-8800
Fax: (408) 232-8805
http://www.hynix.com
http://www.us.hynix.com
40
Rev. 1.0/Nov. 01