1090 MP 90 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1090MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The transistor includes input prematch for broadband capability. The device has gold thinfilm metallization for proven highest MTTF. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55FU, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 250 Watts Peak Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 60 Volts 4.0 Volts 6.0 Amps Peak Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to +150 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS Pout Pin Pg ηc VSWR BVebo BVces Cob hFE θjc1 TEST CONDITIONS MIN TYP Broadband Power Out Power Input Broadband Power Gain Collector Efficiency Load Mismatch Tolerance F = 1025-1150 MHz Vcc = 50 Volts PW = 10 µsec DF =1% F = 1090 MHz 90 98 Emitter to Base Breakdown Collector to Emitter Breakdown Capacitance Collector to Base DC - Current Gain Thermal Resistance Ie = 1 mA Ie = 10 mA Vcb = 50 V Ic= 500mA,Vcc= 5V Tc=25(C MAX 14 8.0 35 8.5 38 UNITS Watts Watts dB % 10:1 3.5 65 15 16 120 0.6 Volts Volts pF o C/W Note1: At Rated Power Output and pulse conditions. 2: Maximum Ratings are for RF Amplifier Operation Issue Aug 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1090 MP August 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1090MP VCB=50V Pout= 90Watts. PW 10uS, DF=1% Zin R 4.9 4.55 4.41 4.39 4.51 Frequency 960 1030 1090 1150 1215 ZCL R 8.77 7.66 6.93 6.36 5.89 jx 12.13 10.71 9.65 8.7 7.81 jx 14.41 12.3 10.59 8.95 7.26 SERIES INPUT IMPEDANCE V.s FREQUENCY 14 R jx 9 REAL(Ohm) 8 12 10 7 8 6 6 5 4 4 2 IMAGINARY 10 0 3 960 1030 1090 1150 1215 FREQUENCY(MHz) SERIES COLLECTOR LOAD IMPEDANCE V.s FREQUENCY 16 10 REAL(Ohm) 12 8 10 8 7 6 6 4 R jx 5 2 0 4 960 1030 1090 1150 FREQUENCY(MHz) 1215 IMAGINARY 14 9