UTV120 12 Watts, 26.5 Volts, Class A UHF Television - Band IV & V GENERAL DESCRIPTION CASE OUTLINE 55JT, STYLE 2 The UTV 120 is a COMMON EMITTER transistor capable of providing 12 Watts Peak, Class A, RF Output Power over the band 470 - 860 MHz. The transistor includes double input prematching for full broadband capability. Gold Metalization and Diffused Ballasting are used to provide high reliability and supreme ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 80 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVceo Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 45 Volts 28 Volts 4 Volts 3.5 Amps Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to + 150 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS Pout Pin Pg IMD1 VSWR1 Power Out - Pk Sync Power Input Power Gain Intermodulation Distortion Load Mismatch Tolerance F = 470 - 860 MHz Vcc = 26.5 Volts Ic = 1.7 Amps Pref = 12 Watts F = 860 MHz LVceo2 BVces2 BVebo2 hFE2 Cob2 θjc MIN TYP MAX 12 1.55 8.9 Collector to Emitter 28 Ic = 65 mA Breakdown 45 Ic = 25 mA Collector to Base Breakdown 4 Ie = 10 mA Emitter to Base Breakdown 10 Vce = 5 V, 500 mA Current Gain Vcb = 26 V, F = 1 Output Capacitance MHz Thermal Resistance Tc = 25oC Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB Note 2: Per side Initial Issue June, 1994 9.5 -52 3:1 UNITS Watts Watts dB dB Volts Volts Volts 23 1.6 o pF C/W GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 UTV120 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 UTV-120 Vce 1 Vbe 2 + C24 C5 C5 C28 + + C16 C8 C8 C14 + C15 L1 L3 C2 L3 L7 T1 C20 L5 T3 C22 C4 C1 C6 C9 C19 C13 C23 C21 L6 T2 50 OHM RF IN R1 Q1 C3 L5 L4 C12 C10 + C18 + + + C17 C29 C30 C25 C26 Vbe 1 CAPACITORS C1,C6=4.7 pF ATC series A C2,C3,C20,C21=33 pF ATC series A C4,C9=1.2-3.5 pF film diel. trimmer C5,C7,C11,C12=0.01 mF, 50V Tantalum C8,C15,C17,C25=1 mF, 50 V Tantalum C10,C16,C27,C12=0.1 mF 50 V disc ceramic C13=0.6-6 pF piston trimmer C19=0.35-3.5 pF piston trimmer C18,C24,C14,C26=10 mF, 50 V C28,C30=0.001 mF, 50 V disc ceramic C31=100 mF, 50 V electrolytic RESISTORS R1=10 Ohm, 1/2 W Carbon R2,R6=500 Ohm potentiometer R3,R7=4.7K Ohm, 3W, 1% Carbon R4,R8=1 Ohm, 3W, 1% Carbon film R5,R9=47 Ohm, 1/4W Carbon film 50 OHM RF OUT L8 L2 C7 T4 Vce 2 BIAS CIRCUIT R2 DIODES CR1,CR2=IN4148 + C31 CR1 Q2 R3 INDUCTORS L1,L2=0.46 microHenry molded L3,L4=1 turn #18 magnet wire on a 0.325" form TRANSISTORS Q1=GHz UTV-120 Q2,Q3=MJE172 TRANSFORMERS T1,T2,T3,T4=50 Ohm semi-rigid coax cable (0.056" X 1.1") soldered to 0.035" X 1.1" microstrip August 1996 R4 R6 R8 CR2 Vce 2 Q3 Vce 1 R5 R7 Vbe 1 MICROSTRIPLINES L3,L4=0.075" X 0.65" L5,L6=0.120" X 0.31" L7,L8=0.120" X 1.33" R9 Vbe 2