LTO-DMS Semiconductor Corporatin LTO-DMS 1468, 86th Street, Brooklyn New York, 11228, USA Tel: (718) 234 6010 / (707) 3223 4679 MBR10100CT thru MBR10200CT Fax:(718) 234 6013 / (707) 3223 6696 10 Amp HT Power Schottky Barrier Rectifier 100 Volts to 200Volts Features * High Junction Temperature Capability * Low Leakage Current and Low Forward Voltage Drop * Low Power Loss and High Efficiency Maximum Ratings TO-220AB * Operating Junction Temperature: 150°C * Storage Temperature: - 55 °C to +175°C * Per diode Thermal Resistance 2.2°C/W Junction to Case Mechanical Data * Case: Molded Plastic DIMENSIONS * Terminals: Plated Lead Solderable per A B C D E F G H I J K L M N MIL-STD-202, Method 208 * Marking:Type Number * Weight: 2.24 grams (approx) Symbol INCHES MIN 0.570 0.380 0.100 0.235 0.335 0.110 0.500 0.095 0.025 0.016 0.142 0.160 0.045 0.102 typ DIM Characteristics MAX 0.620. 0.405 0.120 0.255 0.365 0.155 0.562 0.105 0.035 0.025 0.147 0.190 0.055 MM MIN 14.4 9.66 2.54 5.97 8.51 2.80 12.7 2.42 0.64 0.41 3.61 4.06 1.14 2.6 typ MAX 15.75 10.28 3.04 6.48 9.27 3.93 14.27 2.66 0.89 0.64 3.37 4.82 1.39 NOTE MBR10100CT MBR10150CT MBR10200CT Unit VRRM Maximum Recurrent Peak Reverse Voltage 100 150 200 V VRM Maximum DC Blocking Voltage 100 150 200 V 70 105 140 V 0.95 V VR(RMS) VF IF(AV) IFSM dv/dt Maximum RMS Voltage Maximum Forward Voltage (Note 1) IF=10A @TJ=25°C Average Forward Current 8.3ms Single Half-Sine-Wave Peak Forward Surge Current Voltage Rate Of Change (Rated VR) Maximum IR Current DC at Reverse Rated DC Blocking Voltage RthJC 0.85 10 A 150 A 10000 V/us TJ=25°C 0.2 TJ=125°C 40 Typical Thermal Resistance (Note 2) 2.0 °C/ W CJ Typical Junction Capacitance (Note 3) TJ Operating Temperature Range -55to+150 °C Storage Temperature Range -55to+175 °C TSTG 170 mA pF NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. Revision: 1 2002/06/17