MBR3030PT - MBR3060PT 30A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 · · · · A B H J S L Q G N Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body Marking: Type Number Weight: 5.6 grams (approx.) Mounting Position: Any C K R P* *2 Places Mechanical Data · · TO-3P D E M M Dim Min Max A 3.20 3.50 B 4.59 5.16 C 20.80 21.30 D 19.70 20.20 E 2.10 2.40 G 0.51 0.76 H 15.90 16.40 J 1.70 2.70 K 3.10Æ 3.30Æ L 3.50 4.51 M 5.20 5.70 N 1.12 1.22 P 1.93 2.18 Q 2.97 3.22 R 11.70 12.80 4.30 Typical S All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 125°C (Note 1) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop per element (Note 3) Symbol MBR 3030PT MBR 3035PT MBR 3040PT MBR 3045PT MBR 3050PT MBR 3060PT Unit VRRM VRWM VR 30 35 40 45 50 60 V VR(RMS) 21 24.5 28 31.5 35 42 V IO 30 A IFSM 200 A @ IF = 20A, TC = 25°C @ IF = 20A, TC = 125°C VFM 0.65 0.60 0.75 0.65 V Peak Reverse Current @ TC = 25°C at Rated DC Blocking Voltage, per element @ TC = 125°C IRM 1.0 60 5.0 100 mA 2.0 K/W Typical Junction Capacitance (Note 2) Cj Typical Thermal Resistance Junction to Case (Note 1) RqJc Voltage Rate of Change (Rated VR) Operating and Storage Temperature Range Notes: 700 1.4 pF dV/dt 10,000 V/µs Tj, TSTG -65 to +150 °C 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Pulse width £300 ms, duty cycle £2%. DS23017 Rev. E-2 1 of 2 MBR3030PT - MBR3060PT 24 18 12 6 0 100 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FWD CURRENT (A) 30 0 50 100 MBR 3030PT - MBR 3045PT 10 MBR 3050PT - MBR 3060PT 1.0 Tj = 25°C Pulse width = 300µs 2% duty cycle 0.1 0 150 300 0.4 0.6 4000 250 0.8 Tj = 25°C f = 1MHz Tj = 25°C 8.3ms Single half-wave JEDEC Method Cj, CAPACITANCE (pF) IFSM, PEAK FWD SURGE CURRENT (A) 0.2 VF, INSTANTANEOUS F0RWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics TC, CASE TEMPERATURE (°C) Fig. 1 Fwd Current Derating Curve 200 150 100 1000 50 100 0 0.1 100 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (mA) 1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 Tj = 125°C 10 1.0 Tj = 75°C 0.1 Tj = 25°C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS23017 Rev. E-2 2 of 2 MBR3030PT - MBR3060PT