ETC TC3889

TC3889
PRE.2_04/27/2005
Preliminary
5W Packaged Self-Bias PHEMT GaAs Power FETs
FEATURES
•
5W Typical Output Power
•
12dB Typical Linear Power Gain at 2.0GHz
•
High Linearity:
IP3 = 47 dBm Typical
•
High Power Added Efficiency:
Nominal PAE of 35%
•
Breakdown Voltage: BVDGO ≥ 18V
•
Wg = 12 mm
•
100 % DC Tested
•
Suitable for High Reliability Application
PHOTO ENLARGEMENT
DESCRIPTION
The TC3889 is a self-bias flange ceramic packaged device with TC1806N PHEMT GaAs FETs, which is
designed to provide the single power supply application. The flange ceramic package provides excellent
thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and
ground the source, which is suitable for oscillator, power amplifier application in a wide range of
commercial application. All devices are 100% DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (@ 2.0 GHz)
Symbol
P1dB
GL
IP3
PAE
IDS
BVDGO
Rth
CONDITIONS
Output Power at 1dB Gain Compression Point
VDS = 10 V
Linear Power Gain
VDS = 10 V
Intercept Point of the 3rd-order Intermodulation
VDS = 10 V, *PSCL = 26 dBm
Power Added Efficiency at 1dB Compression Power
Drain-Source Current at VDS = 10 V
Drain-Gate Breakdown Voltage at IDGO = 6mA
Thermal Resistance
MIN
TYP
36
37
dBm
12
dB
47
dBm
35
1300
22
2.7
%
mA
Volts
°C/W
18
MAX
UNIT
Note: *PSCL: Output Power of Single Carrier Level.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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