ETC TC2696

TC2696
REV.2_04/12/2004
2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
FEATURES
•
2 W Typical Output Power at 2.45 GHz
•
14 dB Typical Linear Power Gain at 2.45 GHz
•
High Linearity:
IP3 = 43 dBm Typical at 2.45 GHz
•
•
High Power Added Efficiency:
Nominal PAE of 43 % at 2.45 GHz
Suitable for High Reliability Application
•
Breakdown Voltage:
PHOTO ENLARGEMENT
BVDGO ≥ 18 V
•
Lg = 0.6 µm, Wg = 5 mm
•
100 % DC Tested
•
Flange Ceramic Package
DESCRIPTION
The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT)
chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are
100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range
power amplifier for commercial applications including Cellular/PCS systems, and military high
performance power amplifier.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
P1dB
GL
IP3
PAE
IDSS
gm
VP
BVDGO
Rth
CONDITIONS
Output Power at 1dB Gain Compression Point , f = 2.45GHz
VDS = 8 V, IDS = 600 mA
Linear Power Gain, f = 2.45GHz
VDS = 8 V, IDS = 600 mA
Intercept Point of the 3rd-order Intermodulation, f = 2.45GHz
VDS = 8 V, IDS = 600 mA, *PSCL = 20 dBm
Power Added Efficiency at 1dB Compression Power, f = 2.45GHz
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 10 mA
Drain-Gate Breakdown Voltage at IDGO =2.5 mA
Thermal Resistance
MIN
TYP
32.5
33
dBm
12
14
dB
43
43
1.2
850
-1.7**
18
7
dBm
%
A
mS
Volts
Volts
°C/W
15
MAX
UNIT
Note: * PSCL: Output Power of Single Carrier Level.
** For the tight control of the pinch-off voltage range, we divide TC2696 into 3 model numbers to fit customer design requirement
(1)TC2696P1519 : Vp = -1.5V to -1.9V (2)TC2696P1620 : Vp = -1.6V to -2.0V (3)TC2696P1721 : Vp = -1.7V to -2.1V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for
details.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/2
TC2696
REV.2_04/12/2004
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)
Symbol
VDS
VGS
IDS
Pin
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
RECOMMANDED OPERATING CONDITION
Rating
12 V
-5 V
IDSS
26 dBm
7.7 W
175 °C
- 65 °C to +175 °C
Symbol
VDS
ID
Parameter
Drain to Source Voltage
Drain Current
Rating
8V
600 mA
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly,
and testing. The static discharge must be less than
300V.
TYPICAL SCATTERING PARAMETERS (TA=25 °C)
VDS = 8 V, IDS = 600 mA
FREQUENCY
(GHz)
2
3
4
5
6
7
8
9
S11
MAG
0.9232
0.9179
0.9098
0.8978
0.8806
0.8574
0.8295
0.8045
S21
ANG
175.28
161.34
148.40
134.59
118.62
99.05
74.18
42.52
MAG
1.8019
1.2279
0.9600
0.8236
0.7599
0.7426
0.7529
0.7648
S12
ANG
58.43
38.12
19.07
0.11
-19.79
-41.79
-67.22
-97.22
MAG
0.0288
0.0303
0.0327
0.0364
0.0420
0.0496
0.0595
0.0701
S22
ANG
-14.46
-26.85
-38.61
-50.96
-64.88
-81.49
-102.04
-127.59
MAG
0.6268
0.6531
0.6737
0.6847
0.6839
0.6699
0.6430
0.6085
ANG
174.83
167.56
158.81
148.28
135.52
119.60
98.92
71.06
OUTLINE DIMENSIONS (in mm)
Source
Source
Drain
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P2/2