ETC UTV010

UTV010
1 Watt, 20 Volts, Class A
UHF Television - Band IV & V
GENERAL DESCRIPTION
CASE OUTLINE
The UTV 010 is a COMMON EMITTER transistor capable of providing 1
Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. Gold
Metalization and Diffused Ballasting are used to provide high reliability and
supreme ruggedness.
55FT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVceo
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
15 Watts
45 Volts
20 Volts
3.5 Volts
1.25 Amps
- 65 to + 150 oC
+ 200 oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
IMD1
VSWR1
Power Out - Pk Sync
Power Input
Power Gain
Intermodulation Distortion
Load Mismatch Tolerance
F = 470 - 860 MHz
Vcc = 20 Volts
Ic = 440 mA
Pref = 1.0 Watts
F = 860 MHz
LVceo
BVces
BVebo
hFE
Cob
θjc
Collector to Emitter Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance
Thermal Resistance
Ic = 20 mA
Ic = 10 mA
Ie = 1 mA
Vce = 5 V, 200 mA
Vcb = 20 V, F = 1 MHz
Tc = 25oC
MIN
TYP
MAX
1.0
0.09
11.5
-60
UNITS
Watts
Watts
dB
dB
30:1
24
45
3.5
15
Volts
Volts
Volts
7.0
12
o
pF
C/W
Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz
European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB
Initial Issue June, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
UTV010
August 1996
UTV010
C7
RFC 1
C9
RFC 1
Vbe
Vce
C8
C6
L2
C2
L6
C1
L1
L3
C4
L4
L5
C5
C3
BIAS CIRCUIT
Vcc
R4
R1
C1,C4=100 ATC "B"
C2,C3= 8.2 pf ATC
C5= 2.0 pf
C6,C8= 1mF TANT
C7,C9= 1mF 50V
L2=3.3mH molded Ind.
L6= 100W Stripline
RFC1=5 Turns, 24Awg on 125ml Toroid
RFC2 in parallel with 15 1/2 Resistor
L5,L1= 50W Stripline 2" long
L4,L3= 34W Stripline 300 mils long
CR1
R1= 500 ohm Pot
R2= 4.7 Kohm 1/4 W
R3= 47 ohm 1/4 W
R4= 1 ohm 3 Watt, 1%
Cr1= IN 4148
Q1= MJE 172
Vcc
Q1
R2
R3
Vbe
August 1996