CNX62A NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATION APPROVALS l VDE 0884 approval pending 1 2 6 5 3 4 1.2 l EN60950 approval pending 7.62 6.62 DESCRIPTION The CNX62A optically coupled isolator consists of an infrared light emitting diode and a NPN silicon photo transistor in a standard 6 pin dual in line plastic package with the base pin unconnected. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio (40% min) l Low Saturation Voltage suitable for TTL integrated circuits l High BVCEO (50V min) l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l Base pin unconnected for improved noise immunity in high EMI environment APPLICATIONS l DC motor controllers l Industrial systems controllers l Signal transmission between systems of different potentials and impedances OPTION SM OPTION G SURFACE MOUNT 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 3.35 0.26 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 50V 6V 160mW POWER DISSIPATION 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail [email protected] http://www.isocom.com DB90037m-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) Input Output Coupled PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 6 Collector-emitter Breakdown (BVCEO) ( Note 2 ) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (IC / IF ) (Note 2) 1.2 1.5 10 50 6 50 TEST CONDITION V V µA IF = 10mA IR = 10µA VR = 6V V IC = 1mA V nA IE = 100µA VCE = 10V 0.4 10mA IF , 0.4V VCE 10mA IF , 5V VCE 1.5 Collector-emitter Saturation VoltageVCE (SAT) Input to Output Isolation Voltage VISO 0.4 5300 7500 Input-output Isolation Resistance RISO 5x1010 Turn-on Time Turn-off Time Turn-on Time Turn-off Time Note 1 Note 2 7/12/00 ton toff ton toff 3 3 12 12 V 10mA IF , 4mA IC VRMS VPK See note 1 See note 1 Ω VIO = 500V (note 1) µs µs µs µs VCC = 5V , IC = 2mA , RL = 100Ω VCC = 5V , IC = 2mA , RL = 1kΩ Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB90037m-AAS/A1 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 150 100 50 50 30 40 20 30 15 20 10 10 IF = 5mA 0 0 -30 0 25 50 75 100 0 125 6 8 Collector-emitter Saturation Voltage vs. Ambient Temperature 60 50 40 30 20 0 -30 0 25 50 75 100 125 Collector-emitter saturation voltage V CE(SAT) (V) Forward Current vs. Ambient Temperature 10 10 0.28 0.24 IF = 10mA IC = 4mA 0.20 0.16 0.12 0.08 0.04 0 -30 Ambient temperature TA ( °C ) 0 25 50 75 100 Ambient temperature TA ( °C ) Relative Current Transfer Ratio vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current 2.8 1.5 IF = 10mA VCE = 0.4V Relative current transfer ratio Relative current transfer ratio 4 Collector-emitter voltage VCE ( V ) 70 1.0 0.5 2.4 2.0 1.6 1.2 0.8 VCE = 0.4V TA = 25°C 0.4 0 0 -30 7/12/00 2 Ambient temperature TA ( °C ) 80 Forward current I F (mA) TA = 25°C 50 Collector current I C (mA) Collector power dissipation P C (mW) 200 0 25 50 75 Ambient temperature TA ( °C ) 100 1 2 5 10 20 50 Forward current IF (mA) DB90037m-AAS/A1