INFRARED EMITTING DIODE Model No. LN-1A11T ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) CHARACTERISTIC SYMBOL RATING UNIT Forward current IF 40 mA Pulse forward current IFP 1 A Reverse voltage VR 5 V Operating temperature Topr -20 to +70 ℃ Storage temperature Tstg -25 to +80 ℃ PM 75 Power dissipation Lead soldering temperature ( 5mm from body ) 260℃ for 5 sec. mW ELECTRICAL OPTICAL CHARACTERISTICS (Ta = 25℃) CHARACTERISTIC SYMBOL CONDITION Forward voltage VF IF=20mA Reverse current IR VR=5V Min. Typ. Max. UNIT 1.3 1.5 V 10 uA Peak emission wavelength λp IF=20mA 940 nm Spectral band width Δλ IF=20mA 50 nm Breakdown voltage VBR IR=100uA 30 V Switching time Ie from 10% to 90% Tr/Tf IF=20mA 700/500 ns 2θ1/2 IF=20mA 70 deg. Po IF=20mA 2.0 Viewing half angle Power output 5 mW/cm Unit : mm Letex Technology Corp.