Infrared Emitting Diode LSF876C1 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25 ℃) SYMBOL PO VF IR λp Δλ θ ITEM Power Output Forward Voltage Reverse Current Peak Wavelength Spectral Line Half Width Half Intensity Beam Angle MIN 8.0 CONDITIONS IF=50mA IF=50mA VR=5V IF=50mA IF=50mA IF=50mA APPLICATIONS RELATIVE POWER vs FORWARD CURRENT RELATIVE POWER OUTPUT(%) FORWARD CURRENT(mA) 200 80 150 60 100 40 20 ① Anode ･Optical Sensors ② Cathode 50 0 0 Dimensions (Unit:mm) 1.8 10 UNIT mW V μA nm nm deg. 250 100 ･High-output Power ･Compact ･High Reliability ･Optical Switches MAX 870 45 ±20 FORWARD I-V CHARACTERISTICS 120 FEATURES TYP 18.0 1.5 0 1 2 FORWARD VOLTAGE(V) 0 3 25 50 75 FORWARD CURRENT(mA) 100 125 SPECTRAL OUTPUT RADIATION PATTERN 120 *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body OPTRANS UNIT mA A V mW ℃ ℃ ℃ ℃ 100 80 100 80 60 40 20 FORWARD CURRENT(mA) RATINGS 100 1 5 100 -20 TO 80 -30 TO 100 100 260 RELATIVE POWER OUTPUT(%) SYMBOL IF IFP VR PD Topr Tstg Tj Tls RELATIVE POWER OUTPUT(%) ITEM Forward Current (DC) Forward Current (Pulse)*1 Reverse Voltage Power Dissipation Operating Temp. Storage Temp. Junction Temp. Lead Soldering Temp.*2 THERMAL DERATING CURVE 120 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) 80 60 40 27 60 40 20 20 0 770 870 WAVELENGTH(nm) 970 0 0 -90 -60 -30 0 30 BEAM ANGLE(deg.) To purchase this part contact Marktech Optoelectronics at 800.984.5337 60 90 -30 0 30 60 90 AMBIENT TEMPERATURE( ) Marktech Optoelectronics www.marktechopto.com 11/6/2009 LSF876C1.xls