W www.ti.com SCDS177 – OCTOBER 2004 DESCRIPTION The TS5A3357 is a high-performance, single-pole triple throw (SP3T) analog switch that is designed to operate from 1.65 V to 5.5 V. The device offers a low ON-state resistance and low input/output capacitance and, thus, causes a very low signal distortion. The break-before-make feature allows transferring of a signal from one port to another, with a minimal signal distortion. This device also offers a low charge injection which makes this device suitable for high-performance audio and data acquisition systems. FEATURES D Specified Break-Before-Make Switching D Low ON-State Resistance D High Bandwidth D Control Inputs are 5.5-V Tolerant D Low Charge-Injection D Excellent ON-State Resistance Matching D Low Total Harmonic Distortion D 1.65-V to 5.5-V Single-Supply Operation D Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II APPLICATIONS D ESD Performance Tested Per JESD 22 D Cell Phones D PDAs D Portable Instrumentation − 2000-V Human-Body Model (A114-B, Class II) − 1000-V Charged-Device Model (C101) SUMMARY OF CHARACTERISTICS (V+ = 5 V AND TA = 25 °C) SSOP OR VSSOP PACKAGE (TOP VIEW) TS5A3357 NO0 1 8 V+ NO1 2 7 COM NO2 3 6 IN1 GND 4 5 IN2 Logic Control FUNCTION TABLE IN1 IN2 COM TO NO0 COM TO NO1 COM TO NO2 L L OFF OFF OFF H L ON OFF OFF L H OFF ON OFF H H OFF OFF ON Configuration 3:1 Multiplexer/Demultiplexer (1 × SP3T) Number of Channels 1 ron ∆ron 5Ω ron(flat) tON/tOFF 6.5 Ω tBBM Charge-Injection 0.5 ns Bandwidth 334 MHz Off-Isolation −82 dB at 10 MHz Crosstalk −62 dB at 10 MHz Total Harmonic Distortion 0.05% ICOM(OFF) Package Option ±1 µA 0.1 Ω 6.5 ns/3.7 ns 3.4 pC 8 Pin DCT (SM8) or DCU (US8) Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. !"#$ % &'!!($ #% )'*+&#$ ,#$( !,'&$% &!" $ %)(&&#$% )(! $-( $(!"% (.#% %$!'"($% %$#,#!, /#!!#$0 !,'&$ )!&(%%1 ,(% $ (&(%%#!+0 &+',( $(%$1 #++ )#!#"($(!% Copyright 2004, Texas Instruments Incorporated W www.ti.com SCDS177 – OCTOBER 2004 ORDERING INFORMATION −40°C to 85°C ORDERABLE PART NUMBER PACKAGE(1) TA TOP-SIDE MARKING(2) SSOP − DCT Tape and reel TS5A3357DCTR JA9_ _ _ VSSOP − DCU Tape and reel TS5A3357DCUR JA9_ (1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package. (2) DCT: The actual top-side marking has three additional characters that designate the year, month, and assembly/test site. DCU: The actual top-side marking has one additional character that designates the assembly/test site. YEP/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free). Absolute Minimum and Maximum Ratings(1)(2) over operating free-air temperature range (unless otherwise noted) V+ VNO VCOM IK INO ICOM VI IIK I+ IGND MIN MAX Supply voltage range(3) −0.5 6.5 V Analog voltage range(3)(4)(5) −0.5 V+ + 0.5 V −50 50 mA −100 100 mA −0.5 6.5 Analog port diode current VNO, VCOM < 0 or VNO, VCOM > V+ On-state switch current VNO, VCOM = 0 to V+ Digital input voltage range(3)(4) Digital input clamp current Continuous current through V+ or GND VI < 0 −50 −100 UNIT V mA 100 mA θJA Package thermal impedance(6) 165 °C/W Tstg Storage temperature range −65 150 °C (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. (2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum. (3) All voltages are with respect to ground unless otherwise specified. (4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed. (5) This value is limited to 5.5 V maximum. (6) The package thermal impedance is calculated in accordance with JESD 51-7. 2 W www.ti.com SCDS177 – OCTOBER 2004 ELECTRICAL CHARACTERISTICS FOR 5 V SUPPLY (V+ = 4.5 V TO 5.5 V AND TA = −40 °C TO 85 °C) (UNLESS OTHERWISE NOTED) PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP(1) MAX UNIT ANALOG SWITCH Analog Signal Range Peak On-Resistance VCOM, VNO rpeak 0 0 ≤ VNO ≤ V+, ICOM = −30 mA, Switch ON, see Figure 12 ron VNO = 2.4 V, ICOM = −30 mA 4.5 V 25 °C VNO = 0, ICOM = 30 mA On-Resistance Full 25 °C Full 15 Ω 7 6 12 7 4.5 V 12 25 °C VNO = 4.5 V, ICOM = −30 mA V 5 Full Switch ON, see Figure 12 V+ 7 Full Ω 15 15 On-Resistance match between channels ∆ron VNO = 3.15 V, ICOM = −30 mA, Switch ON, see Figure 12 25 °C 4.5 V 0.1 Ω On-Resistance flatness ron(flat) 0 ≤ VNO ≤ V+, ICOM = −30 mA Switch ON, see Figure 12 25 °C 5V 6.5 Ω NO Off-Leakage Current INO(OFF) VNO = 0 to V+, VCOM = V+ to 0, Switch OFF, see Figure 13 Full COM Off-Leakage Current ICOM(OFF) VNO = 0 to V+, VCOM = V+ to 0, Switch OFF, see Figure 13 Full NO On-Leakage Current INO(ON) VNO = 0 to V+, VCOM = Open, Switch ON, see Figure 13 Full COM On-Leakage Current ICOM(ON) VNO = Open, VCOM = 0 to V+, Switch ON, see Figure 13 Full 25 °C 25 °C 25 °C 25 °C 5.5 V 5.5 V 5.5 V 5.5 V −0.1 0.1 −1 1 −0.1 0.1 −1 1 −0.1 0.1 −1 1 −0.1 0.1 −1 1 µA µA µA µA DIGITAL INPUTS (IN1, IN2)(2) Input Logic High VIH Full Input Logic Low VIL Full Input Leakage Current IIH, IIL VIN = 5.5 V or 0 25 °C Full 0.7 × V+ 0 5.5 V 0.3 × V+ V 0.1 5.5 V 1 µA (1) All typical values are at V+ = 5 V, TA = 25°C. (2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004. 3 W www.ti.com SCDS177 – OCTOBER 2004 Electrical Characteristics for 5 V Supply (continued) (V+ = 4.5 V TO 5.5 V AND TA = −40 °C TO 85 °C) (UNLESS OTHERWISE NOTED) PARAMETER TEST CONDITIONS SYMBOL TA V+ MIN TYP(1) MAX UNIT DYNAMIC 25 °C 1.5 6.5 1.5 7 0.8 3.7 0.8 7 tON VNO = V+ or GND, RL = 500 Ω, CL = 35 pF, see Figure 15 tOFF VNO = V+ or GND, RL = 500 Ω, CL = 35 pF, see Figure 15 Break-Before-Make Time tBBM VNO = V+, RL = 500 Ω, CL = 35 pF, see Figure 16 Charge Injection QC CL = 0.1 nF, VGEN = 0 V, see Figure 20 25 °C 5V 3.4 pC NO Off-Capacitance CNO(OFF) VNO = V+ or GND, Switch OFF, see Figure 14 25 °C 5V 4.5 pF COM Off-Capacitance CCOM(OFF) VNO = V+ or GND, Switch OFF, see Figure 14 25 °C 5V 10.5 pF NO On-Capacitance CNO(ON) VNO = V+ or GND, Switch ON, see Figure 14 25 °C 5V 17 pF COM On-Capacitance CCOM(ON) VCOM = V+ or GND, Switch ON, see Figure 14 25 °C 5V 17 pF Digital Input Capacitance CIN VIN = V+ or GND, see Figure 14 25 °C 5V 3 pF Bandwidth BW RL = 50 Ω, Switch ON, see Figure 17 25 °C 4.5 V to 5.5 V 334 MHz Off-Isolation OISO RL = 50 Ω, f = 10 MHz, Switch OFF, see Figure 18 25 °C 4.5 V to 5.5 V −82 dB Crosstalk XTALK RL = 50 Ω, f = 10 MHz, Switch ON, see Figure 19 25 °C 4.5 V to 5.5 V −62 dB Total Harmonic Distortion THD RL = 600 Ω, CL = 50 pF, f = 20 Hz to 20 kHz, see Figure 21 25 °C 5V 0.05 % I+ VIN = V+ or GND, Switch ON or OFF Turn-On Time Turn-Off Time Full 25 °C Full 25 °C Full 4.5 V to 5.5 V 4.5 V to 5.5 V ns ns 0.5 4.5 V to 5.5 V ns 0.5 SUPPLY Positive Supply Current (1) All typical values are at V+ = 5 V, TA = 25°C. 4 25 °C Full 1 5.5 V 10 µA W www.ti.com SCDS177 – OCTOBER 2004 Electrical Characteristics for 3.3 V Supply (V+ = 3 V TO 3.6 V AND TA = −40 °C TO 85 °C) (UNLESS OTHERWISE NOTED) PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP(1) MAX UNIT ANALOG SWITCH Analog Signal Range Peak On-Resistance VCOM, VNO rpeak 0 0 ≤ VNO ≤ V+, ICOM = −24 mA, VNO = 0 V, ICOM = 24 mA On-Resistance ron Switch ON, see Figure 12 Full 3V 25 °C Switch ON, see Figure 12 VNO = 3 V, ICOM = −24 mA V 25 Ω 6.5 9 9 20 Full 25 °C V+ 9 3V Full Ω 20 On-Resistance match between channels ∆ron VNO = 2.1 V, ICOM = −24 mA, Switch ON, see Figure 12 25 °C 3V 0.1 Ω On-Resistance flatness ron(flat) 0 ≤ VNO ≤ V+, ICOM = −24 mA, Switch ON, see Figure 12 25 °C 3.3 V 13.5 Ω NO Off-Leakage Current INO(OFF) VNO = 0 to V+, VCOM = V+ to 0, Switch OFF, see Figure 13 Full COM Off-Leakage Current ICOM(OFF) VNO = 0 to V+, VCOM = V+ to 0, Switch OFF, see Figure 13 Full NO On-Leakage Current INO(ON) VNO = 0 to V+, VCOM = Open, Switch ON, see Figure 13 Full COM On-Leakage Current ICOM(ON) VNO = Open, VCOM = 0 to V+, Switch ON, see Figure 13 Full 25 °C 25 °C 25 °C 25 °C 3.6 V 3.6 V 3.6 V 3.6 V −0.1 0.1 −1 1 −0.1 0.1 −1 1 −0.1 0.1 −1 1 −0.1 0.1 −1 1 µA A µA A µA A µA A DIGITAL INPUTS (IN1, IN2)(2) Input Logic High VIH Full Input Logic Low VIL Full Input Leakage Current IIH, IIL VIN = 5.5 V or 0 25 °C Full 0.7 × V+ 3.6 V 5.5 V 0 0.3 × V+ V −1 0.1 1 µA (1) All typical values are at V+ = 3.3 V, TA = 25°C. (2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004. 5 W www.ti.com SCDS177 – OCTOBER 2004 Electrical Characteristics for 3.3 V Supply (continued) (V+ = 3 V TO 3.6 V AND TA = −40 °C TO 85 °C) (UNLESS OTHERWISE NOTED) PARAMETER TEST CONDITIONS SYMBOL TA V+ MIN TYP(1) MAX UNIT DYNAMIC 25 °C 2 9.5 2 11 1.3 5.1 1.5 5.5 tON VNO = V+ or GND, RL = 500 Ω, CL = 50 pF, see Figure 15 Full tOFF VNO = V+ or GND, RL = 500 Ω, CL = 50 pF, see Figure 15 Full Break-Before-Make Time tBBM VNO = V+, RL = 500 Ω, CL = 35 pF, see Figure 16 Full Charge Injection QC CL = 0.1 nF, VGEN = 0 V, see Figure 20 25 °C 3.3 V 1.75 pC NO Off-Capacitance CNO(OFF) VNO = V+ or GND, Switch OFF, see Figure 14 25 °C 3.3 V 4.5 pF COM Off-Capacitance CCOM(OFF) VNO = V+ or GND, Switch OFF, see Figure 14 25 °C 3.3 V 10.5 pF NO On-Capacitance CNO(ON) VNO = V+ or GND, Switch ON, see Figure 14 25 °C 3.3V 17 pF COM On-Capacitance CCOM(ON) VCOM = V+ or GND, Switch ON, see Figure 14 25 °C 3.3 V 17 pF Digital Input Capacitance CIN VIN = V+ or GND, see Figure 14 25 °C 3.3 V 3 pF Bandwidth BW RL = 50 Ω, Switch ON, see Figure 17 25 °C 3 V to 3.6 V 327 MHz Off-Isolation OISO RL = 50 Ω, f = 10 MHz, Switch OFF, see Figure 18 25 °C 3 V to 3.6 V −82 dB Crosstalk XTALK RL = 50 Ω, f = 10 MHz, Switch ON, see Figure 19 25 °C 3 V to 3.6 V −62 dB I+ VIN = V+ or GND, Switch ON or OFF Turn-On Time Turn-Off Time 25 °C 25 °C 3 V to 3.6 V 3 V to 3.6 V ns ns 0.5 3 V to 3.6 V ns 0.5 SUPPLY Positive Supply Current (1) All typical values are at V+ = 3.3 V, TA = 25°C. 6 25 °C Full 1 3.6 V 10 µA W www.ti.com SCDS177 – OCTOBER 2004 Electrical Characteristics for 2.5 V Supply (V+ = 2.3 V TO 2.7 V AND TA = −40 °C TO 85 °C) (UNLESS OTHERWISE NOTED) PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP(1) MAX UNIT ANALOG SWITCH Analog Signal Range Peak On-Resistance VCOM, VNO rpeak 0 0 ≤ VNO ≤ V+, ICOM = −8 mA, VNO = 0 V, ICOM = 8 mA On-Resistance ron Switch ON, see Figure 12 Full 2.3 V 25 °C Switch ON, see Figure 12 VNO = 2.3 V, ICOM = −8 mA 8 Full 25 °C V+ V 50 Ω 12 12 2.3 V 11 Full 30 Ω 30 On-Resistance match between channels ∆ron VNO = 1.6 V, ICOM = −8 mA, Switch ON, see Figure 12 25 °C 2.3 V 0.3 Ω On-Resistance flatness ron(flat) 0 ≤ VNO ≤ V+, ICOM = −8 mA, Switch ON, see Figure 12 25 °C 2.5 V 39 Ω NO Off-Leakage Current INO(OFF) VNO = 0 to V+, VCOM = V+ to 0, Switch OFF, see Figure 13 Full COM Off-Leakage Current ICOM(OFF) VNO = 0 to V+, VCOM = V+ to 0, Switch OFF, see Figure 13 Full NO On-Leakage Current INO(ON) VNO = 0 to V+, VCOM = Open, Switch ON, see Figure 13 Full COM On-Leakage Current ICOM(ON) VNO = Open, VCOM = 0 to V+, Switch ON, see Figure 13 Full 25 °C 25 °C 25 °C 25 °C 2.7 V 2.7 V 2.7 V 2.7 V −0.1 0.1 −1 1 −0.1 0.1 −1 1 −0.1 0.1 −1 1 −0.1 0.1 −1 1 µA A µA A µA A µA A DIGITAL INPUTS (IN1, IN2)(2) Input Logic High VIH Full Input Logic Low VIL Full Input Leakage Current IIH, IIL VIN = 5.5 V or 0 25 °C Full 0.75 × V+ 0 5.5 V 0.25 × V+ V 0.1 2.3 V 1 µA (1) All typical values are at V+ = 2.5 V, TA = 25°C. (2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004. 7 W www.ti.com SCDS177 – OCTOBER 2004 Electrical Characteristics for 2.5 V Supply (continued) (V+ = 2.3 V TO 2.7 V AND TA = −40 °C TO 85 °C) (UNLESS OTHERWISE NOTED) PARAMETER TEST CONDITIONS SYMBOL TA V+ MIN TYP(1) MAX UNIT DYNAMIC 25 °C 3 15 3 16.5 2 7.2 2 7.8 tON VNO = V+ or GND, RL = 500 Ω, CL = 50 pF, see Figure 15 Full tOFF VNO = V+ or GND, RL = 500 Ω, CL = 50 pF, see Figure 15 Full Break-Before-Make Time tBBM VNO = V+, RL = 500 Ω, CL = 35 pF, see Figure 16 Full Charge Injection QC CL = 0.1 nF, VGEN = 0 V, see Figure 20 25 °C 2.5 V 1.15 pC NO Off-Capacitance CNO(OFF) VNO = V+ or GND, Switch OFF, see Figure 14 25 °C 2.5 V 4.5 pF COM Off-Capacitance CCOM(OFF) VNO = V+ or GND, Switch OFF, see Figure 14 25 °C 2.5 V 10.5 pF NO On-Capacitance CNO(ON) VNO = V+ or GND, Switch ON, see Figure 14 25 °C 2.5V 17 pF COM On-Capacitance CCOM(ON) VCOM = V+ or GND, Switch ON, see Figure 14 25 °C 2.5 V 17 pF Digital Input Capacitance CIN VIN = V+ or GND, see Figure 14 25 °C 2.5 V 3 pF Bandwidth BW RL = 50 Ω, Switch ON, see Figure 17 25 °C 2.3 V to 2.7 V 320 MHz Off-Isolation OISO RL = 50 Ω, f = 10 MHz, Switch OFF, see Figure 18 25 °C 2.3 V to 2.7 V −81 dB Crosstalk XTALK RL = 50 Ω, f = 10 MHz, Switch ON, see Figure 19 25 °C 2.3 V to 2.7 V −61 dB I+ VIN = V+ or GND, Switch ON or OFF Turn-On Time Turn-Off Time 25 °C 25 °C 2.3 V to 2.7 V 2.3 V to 2.7 V ns ns 0.5 2.3 V to 2.7 V ns 0.5 SUPPLY Positive Supply Current (1) All typical values are at V+ = 2.5 V, TA = 25°C. 8 25 °C Full 1 2.7 V 10 µA W www.ti.com SCDS177 – OCTOBER 2004 Electrical Characteristics for 1.8 V Supply (V+ = 1.65 V TO 1.95 V AND TA = −40 °C TO 85 °C) (UNLESS OTHERWISE NOTED) PARAMETER TEST CONDITIONS SYMBOL TA V+ MIN TYP(1) MAX UNIT ANALOG SWITCH Analog Signal Range Peak On-Resistance VCOM, VNO rpeak 0 0 ≤ VNO ≤ V+, ICOM = −4 mA, VNO = 0 V, ICOM = 4 mA On-Resistance ron VNO = 1.8 V, ICOM = −4 mA Switch ON, see Figure 12 Full 1.65 V 25 °C Switch ON, see Figure 12 10 Full 25 °C V+ V 150 Ω 20 20 1.65 V 17 Full 50 Ω 50 On-Resistance match between channels ∆ron VNO = 1.15 V, ICOM = −4 mA, Switch ON, see Figure 12 25 °C 1.65 V 0.3 Ω On-Resistance flatness ron(flat) 0 ≤ VNO ≤ V+, ICOM = −4 mA, Switch ON, see Figure 12 25 °C 1.8 V 140 Ω NO Off-Leakage Current INO(OFF) VNO = 0 to V+, VCOM = V+ to 0, Switch OFF, see Figure 13 Full COM Off-Leakage Current ICOM(OFF) VNO = 0 to V+, VCOM = V+ to 0, Switch OFF, see Figure 13 Full NO On-Leakage Current INO(ON) VNO = 0 to V+, VCOM = Open, Switch ON, see Figure 13 Full COM On-Leakage Current ICOM(ON) VNO = Open, VCOM = 0 to V+, Switch ON, see Figure 13 Full 25 °C 25 °C 25 °C 25 °C 1.95 V 1.95 V 1.95 V 1.95 V −0.1 0.1 −1 1 −0.1 0.1 −1 1 −0.1 0.1 −1 1 −0.1 0.1 −1 1 µA A µA A µA A µA A DIGITAL INPUTS (IN1, IN2)(2) Input Logic High VIH Full Input Logic Low VIL Full Input Leakage Current IIH, IIL VIN = 5.5 V or 0 25 °C Full 0.75 × V+ 0 5.5 V 0.25 × V+ V 0.1 1.95 V 1 µA (1) All typical values are at V+ = 1.8 V, TA = 25°C. (2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004. 9 W www.ti.com SCDS177 – OCTOBER 2004 Electrical Characteristics for 1.8 V Supply (continued) (V+ = 1.65 V TO 1.95 V AND TA = −40 °C TO 85 °C) (UNLESS OTHERWISE NOTED) PARAMETER TEST CONDITIONS SYMBOL TA V+ MIN TYP(1) MAX UNIT DYNAMIC 25 °C 5 32 5 34 tON VNO = V+ or GND, RL = 500 Ω, CL = 50 pF, see Figure 15 Full tOFF VNO = V+ or GND, RL = 500 Ω, CL = 50 pF, see Figure 15 Full Break-Before-Make Time tBBM VNO = V+, RL = 500 Ω, CL = 35 pF, see Figure 16 Full Charge Injection QC CL = 0.1 nF, VGEN = 0 V, see Figure 20 25 °C 1.8 V 0.3 pC NO Off-Capacitance CNO(OFF) VNO = V+ or GND, Switch OFF, see Figure 14 25 °C 1.8 V 4.5 pF COM Off-Capacitance CCOM(OFF) VNO = V+ or GND, Switch OFF, see Figure 14 25 °C 1.8 V 10.5 pF NO On-Capacitance CNO(ON) VNO = V+ or GND, Switch ON, see Figure 14 25 °C 1.8V 17 pF COM On-Capacitance CCOM(ON) VCOM = V+ or GND, Switch ON, see Figure 14 25 °C 1.8 V 17 pF Digital Input Capacitance CIN VIN = V+ or GND, see Figure 14 25 °C 1.8 V 3 pF Bandwidth BW RL = 50 Ω, Switch ON, see Figure 17 25 °C 1.65 V to 1.95 V 341 MHz Off-Isolation OISO RL = 50 Ω, f = 10 MHz, Switch OFF, see Figure 18 25 °C 1.65 V to 1.95 V −81 dB Crosstalk XTALK RL = 50 Ω, f = 10 MHz, Switch ON, see Figure 19 25 °C 1.65 V to 1.95 V −61 dB I+ VIN = V+ or GND, Switch ON or OFF Turn-On Time Turn-Off Time 25 °C 25 °C 1.65 V to 1.95 V 1.65 V to 1.95 V 3 14 3 14.5 ns ns 0.5 1.65 V to 1.95 V ns 0.5 SUPPLY Positive Supply Current (1) All typical values are at V+ = 1.8 V, TA = 25°C. 10 25 °C Full 1 1.95 V 10 µA W www.ti.com SCDS177 – OCTOBER 2004 TYPICAL PERFORMANCE 160 25 TA = 2.5_C 140 V+ = 1.65 V 120 TA = 25_C 100 ron (Ω) ron (Ω) TA = 85_C 20 80 60 15 TA = −40_C 10 V+ = 2.3 V 40 V+ = 3 V 20 5 V+ = 4.5 V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 VCOM (V) Figure 1. ron vs VCOM 3 3.5 400 TA = 85_C 10 350 Leakage Current (nA) 12 ron (Ω) 2.5 Figure 2. ron vs VCOM (V+ = 3 V) 14 TA = 25_C 8 TA = −40_C 6 4 ICOM(ON)/INO(ON) 300 250 200 INO(OFF)/ICOM(OFF) 150 100 2 50 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 −40°C 5 85°C Figure 4. Leakage Current vs Temperature (V+ = 5 V) Figure 3. ron vs VCOM (V+ = 4.5 V) 4 12 V+ = 0 3.5 25°C Temperature (°C) VCOM (V) tr = 2.5 ns, tf = 2.5 ns 10 3 tON/tOFF (ns) Charge Injection (pC) 2 VCOM (V) 2.5 2 1.5 1 8 tON 6 4 tOFF 2 0.5 0 0 1 2 3 4 5 V+ (V) Figure 5. Charge Injection Current vs V+ 6 0 0 1 2 3 4 5 6 V+ (V) Figure 6. tON and tOFF vs V+ 11 W www.ti.com SCDS177 – OCTOBER 2004 TYPICAL PERFORMANCE (continued) 4.5 3 4 TA = 2.5_C tON VIH 3 Logic Threshold tON/tOFF (ns) 3.5 tOFF 2.5 2 1.5 1 2 VIL 1 tr = 2.5 ns, tf = 2.5 ns 0.5 0 0 0 85°C 25°C Temperature (°C) −40°C 1 2 3 4 5 V+ (V) Figure 7. tON and tOFF vs Temperature (V+ = 5 V) Figure 8. Logic Threshold vs V+ 0 0 −1 −20 −2 Gain (dB) Gain (dB) −40 −3 −4 −5 Crosstalk −60 OFF Isolation −80 −6 −100 −7 −8 0.1 −120 1 10 100 0.1 100 1 Frequency (MHz) 10 100 Frequency (MHz) Figure 9. Frequency Response (V+ = 3 V) Figure 10. OFF Isolation and Crosstalk vs Frequency (V+ = 3 V) 0.06 494 0.05 492 V+ = 5 V 490 I+ (nA) THD + Noise (%) 0.04 0.03 486 0.02 484 0.01 482 V+ = 5 V 0.00 0 10 480 100 1000 10000 Frequency (Hz) Figure 11. Total Harmonic Distortion vs Frequency (V+ = 5 V) 12 488 100000 −40°C 25°C 85°C Temperature (°C) Figure 12. Power Supply Current vs Temperature (V+ = 5 V) 1000 W www.ti.com SCDS177 – OCTOBER 2004 PIN DESCRIPTION PIN NUMBER NAME DESCRIPTION 1 NO0 Normally-open terminal 2 NO1 Normally-open terminal 3 NO2 Normally-open terminal 4 GND Digital ground 5 IN2 Digital control pin to connect the COM terminal to the NO terminals 6 IN1 Digital control pin to connect the COM terminal to the NO terminals 7 COM Common terminal 8 V+ Power supply PARAMETER DESCRIPTION SYMBOL DESCRIPTION VCOM Voltage at the COM pin. VNO Voltage at the NO pin. ron Resistance between COM and NO ports, when the channel is ON. ∆ron Difference of ron between channels. ron(flat) Difference between the maximum and minimum value of ron in a channel over the specified range of conditions. INO(OFF) Leakage current measured at the NO port with the corresponding channel (NO to COM) in the OFF-state under worst case input and output conditions. INO(ON) Leakage current measured at the NO port with the corresponding channel (NO to COM) in the ON-state and the output (COM) being open. ICOM(OFF) Leakage current measured at the COM port with the corresponding channel (COM to NO) in the OFF-state under worst case input and output conditions. ICOM(ON) Leakage current measured at the COM port with the corresponding channel (COM to NO) in the ON-state and the output (NO) being open. VIH Minimum input voltage for logic high for the control input (IN) VIL Maximum input voltage for logic low for the control input (IN) VIN Voltage at the IN pin. IIH, IIL Leakage current measured at the IN pin. tON Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the digital control (IN) signal and analog outputs (COM/NO) signal, when the switch is turning ON. tOFF Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the digital control (IN) signal and analog outputs (COM/NO) signal, when the switch is turning OFF. tBBM Break-Before-Make time. This parameter is measured under the specified range of conditions and by the propagation delay between the output of two adjacent analog channels (NO), when the control signal changes state. QC Charge-injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM) output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input. Charge-injection, QC = CL × ∆VO, CL is the load capacitance and ∆VO is the change in analog output voltage. CNO(OFF) Capacitance at the NO port when the corresponding channel (NO to COM) is OFF. CNO(ON) Capacitance at the NO port when the corresponding channel (NO to COM) is ON. CCOM(OFF) Capacitance at the COM port when the corresponding channel (COM to NO) is OFF. CCOM(ON) Capacitance at the COM port when the corresponding channel (COM to NO) is ON. CIN Capacitance of the IN input. 13 W www.ti.com SCDS177 – OCTOBER 2004 PARAMETER DESCRIPTION (continued) SYMBOL 14 DESCRIPTION OISO Off-isolation of the switch is a measurement of off-state switch impedance. This is measured in dB in a specific frequency with the corresponding channel (NO to COM) in the OFF state. XTALK Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel. This is measured in a specific frequency and in dB. BW Bandwidth of the switch. This is the frequency where the gain of an ON channel is −3 dB below the DC gain. I+ Static power supply current with the control (IN) pin at V+ or GND. W www.ti.com SCDS177 – OCTOBER 2004 PARAMETER MEASUREMENT INFORMATION V+ VNO NO0 VCOM Channel ON NO1/NO2 COM r on + VIN1 VIN2 Logic Control VCOM * VNO W I COM VIN = VIH or VIL ICOM GND Figure 13. ON-State Resistance (ron) V+ VNO NO0 VCOM NO1/NO2 VIN1 VIN2 OFF-State Leakage Current Channel OFF VIN = VIH or VIL COM VNO = 0 to V+ or VCOM = 0 to V+ ON-State Leakage Current Channel ON VIN = VIH or VIL Logic Control VNO = 0 to V+, VCOM = Open or VNO = Open, VCOM = 0 to V+ GND Figure 14. ON and OFF State Leakage Current (ICOM(ON), ICOM(OFF), INO(OFF), INO(ON)) V+ VNO NO0−NO2 Capacitance Meter VBIAS = V+ or GND VCOM VBIAS VIN1 VIN2 VIN = VIH or VIL COM Capacitance is measured at NO, COM, and IN inputs during ON and OFF conditions. Logic Control GND Figure 15. Capacitance (CIN, CCOM(ON), CCOM(OFF), CNO(OFF), CNO(ON)) 15 W www.ti.com SCDS177 – OCTOBER 2004 V+ VNO NO0 RL VCOM 2 × V+ Open GND NO1/NO2 COM CL RL IN1 VIN1 VIN2 Logic Input S1 Logic IN2 Control GND V+ Logic Input (VIN) 50% 50% 0V tPZL TEST RL CL tON tPZH tPZL 500 Ω 50 pF VNO0 V+ S1 500 Ω 50 pF GND 2 y V+ tOFF tPHZ tPLZ 500 Ω 50 pF 500 Ω 50 pF V+ GND 2 y V+ GND Switch Output (VCOM) S1 at 2 × V+ tPLZ VOH 50% VOL + 0.3 V VOL tPZH GND Switch Output (VCOM) S1 at GND tPHZ VOH VOH − 0.3 V 50% 0V Figure 16. Turn-ON (tON) and Turn-OFF (tOFF) Time tr < 2.5 ns tf < 2.5 ns V+ VI NO0 VCOM NO1/NO2 RL Logic Input VIN2 50% Switch Output (VCOM) 90% CL Logic IN2 Control GND VI = V+ RL = 500 Ω CL = 35 pF Figure 17. Break-Before-Make (tBBM) Time 16 0 COM IN1 VIN1 V+ Logic Input (VIN) 90% tBBM VOH W www.ti.com SCDS177 – OCTOBER 2004 V+ Network Analyzer 50 W VNO NO0 COM Source Signal VCOM Channel ON: NO0 to COM NO1/NO2 IN1 VIN1 VIN2 50 W Network Analyzer Setup Logic IN2 Control Source Power = 0 dBM DC Bias = 350 mV GND Figure 18. Frequency Response (BW) V+ Network Analyzer 50 W VNO NO0 COM Source Signal 50 W VCOM Channel OFF: NO0 to COM NO1/NO2 Network Analyzer Setup GND Source Power = 0 dBM 50 W DC Bias = 350 mV Figure 19. Off-Isolation (OISO) V+ Network Analyzer 50 W Channel ON: NO0 to COM NO0 VCOM Source Signal Channel OFF: NO1/NO2 to COM NO1/NO2 50 W 50 W Network Analyzer Setup GND Source Power = 0 dBM DC Bias = 350 mV Figure 20. Crosstalk (XTALK) 17 W www.ti.com SCDS177 – OCTOBER 2004 V+ RGEN VGEN + Logic Input (VIN) NO0 VIH OFF ON OFF V IL VOUT ∆VOUT VOUT NO1/NO2 COM CL IN1 VIN1 Logic Input VIN2 VGEN = 0 RGEN = 0 CL = 35 pF QC = CL × ∆VOUT VIN = VIH or VIL Logic IN2 Control GND Figure 21. Charge-Injection (QC) Channel ON: COM to NO0 VSOURCE = V+ P-P VI = VIH or VIL V+/2 V+ fSOURCE = 20 Hz to 20 kHz RL = 600 Ω CL = 50 pF RL 10 mF VO COM NO1/NO2 VSOURCE RL VI CL(1) IN + GND (1) CL includes probe and jig capacitance. Figure 22. Total Harmonic Distortion (THD) 18 10 mF NO0 Analyzer PACKAGE OPTION ADDENDUM www.ti.com 24-Jun-2005 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty Lead/Ball Finish MSL Peak Temp (3) TS5A3357DCTR PREVIEW SM8 DCT 8 3000 TBD Call TI TS5A3357DCUR ACTIVE US8 DCU 8 3000 Pb-Free (RoHS) CU NIPDAU Call TI Level-1-260C-UNLIM TS5A3357DCURE4 ACTIVE US8 DCU 8 3000 Pb-Free (RoHS) CU NIPDAU Level-1-260C-UNLIM TS5A3357DCUT ACTIVE US8 DCU 8 250 Pb-Free (RoHS) CU NIPDAU Level-1-260C-UNLIM TS5A3357DCUTE4 ACTIVE US8 DCU 8 250 Pb-Free (RoHS) CU NIPDAU Level-1-260C-UNLIM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1 MECHANICAL DATA MPDS049B – MAY 1999 – REVISED OCTOBER 2002 DCT (R-PDSO-G8) PLASTIC SMALL-OUTLINE PACKAGE 0,30 0,15 0,65 8 0,13 M 5 0,15 NOM ÇÇÇÇÇ ÇÇÇÇÇ ÇÇÇÇÇ ÇÇÇÇÇ 2,90 2,70 4,25 3,75 Gage Plane PIN 1 INDEX AREA 1 0,25 4 0° – 8° 3,15 2,75 0,60 0,20 1,30 MAX Seating Plane 0,10 0,10 0,00 NOTES: A. B. C. D. 4188781/C 09/02 All linear dimensions are in millimeters. This drawing is subject to change without notice. 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