TI TS5A23160DGSR

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SCDS210 – AUGUST 2005
Description
Features
The TS5A23160 is a dual single-pole double-throw
(SPDT) analog switch that is designed to operate from
1.65 V to 5.5 V. The device offers a low ON-state
resistance and an excellent channel-to-channel
ON-resistance matching. The device has excellent total
harmonic distortion (THD) performance and consumes
very low power. These features make this device
suitable for portable audio applications.
D
D
D
D
D
D
D
D
Applications
D Cell Phones
D PDAs
D Portable Instrumentation
D Audio and Video Signal Routing
D Low-Voltage Data Acquisition Systems
D Communication Circuits
D Modems
D Hard Drives
D Computer Peripherals
D Wireless Terminals and Peripherals
Low ON-State Resistance (1 W)
Control Inputs Are 5.5-V Tolerant
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
1.65-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
D ESD Performance Tested Per JESD 22
− 2000-V Human-Body Model
(A114-B, Class II)
− 1000-V Charged-Device Model (C101)
Summary of Characteristics
V+ = 5 V, TA = 25°C
Dual 2:1 Multiplexer/
Demultiplexer
(2 SPDT)
Configuration
Number of channels
VSSOP PACKAGE
(TOP VIEW)
2
ON-state resistance (ron)
10 COM1
IN1 1
Specified Make-Before-Break Switching
0.9 Ω
ON-state resistance match (∆ron)
0.1 Ω
ON-state resistance flatness (ron(flat))
0.15 Ω
9
NC1
Turn-on/turn-off time (tON/tOFF)
2.5 ns/6 ns
8
V+
Make-before-break time (tMBB)
5.5 ns
NO2 4
7
NC2
Charge injection (QC)
IN2 5
6
COM2
Bandwidth (BW)
NO1 2
GND
3
TS5A23160
FUNCTION TABLE
1 pC
95 MHz
OFF isolation (OISO)
−64 dB at 1 MHz
Crosstalk (XTALK)
−64 dB at 1 MHz
Total harmonic distortion (THD)
0.004%
Leakage current (INC(OFF))
±20 nA
IN
NC TO COM,
COM TO NC
NO TO COM,
COM TO NO
L
ON
OFF
Power-supply current (I+)
H
OFF
ON
Package option
0.1 µA
10-pin VSSOP
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
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Copyright  2005, Texas Instruments Incorporated
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SCDS210 – AUGUST 2005
ORDERING INFORMATION
TA
PACKAGE(1)
ORDERABLE PART NUMBER
TOP-SIDE MARKING
−40°C to 85°C
VSSOP − DGS (MSOP)
Tape and reel
TS5A23160DGSR
PREVIEW
(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package.
Absolute Minimum and Maximum Ratings(1)(2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
V+
VNC
VNO
VCOM
IK
Supply voltage range(3)
−0.5
6.5
V
Analog voltage range(3)(4)(5)
−0.5
V+ + 0.5
V
−50
50
INC
INO
ICOM
VI
On-state switch current
−200
200
−400
400
−0.5
6.5
IIK
I+
Digital input clamp current
IGND
θJA
Continuous current through GND
Package thermal impedance(7)
Analog port diode current
On-state peak switch current(6)
VNC, VNO, VCOM < 0 or VNC, VNO, VCOM > V+
VNC, VNO, VCOM = 0 to V+
Digital input voltage range(3)(4)
VI < 0
UNIT
mA
mA
−50
Continuous current through V+
−100
V
mA
100
mA
100
mA
165
°C/W
Tstg
Storage temperature range
−65
150
°C
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified
is not implied.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(3) All voltages are with respect to ground, unless otherwise specified.
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(5) This value is limited to 5.5 V maximum.
(6) Pulse at 1-ms duration < 10% duty cycle.
(7) The package thermal impedance is calculated in accordance with JESD 51-7.
2
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Electrical Characteristics for 5-V Supply(1)
V+ = 4.5 V to 5.5 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO,
VNC
0 ≤ (VNO or VNC) ≤ V+,
ICOM = −100 mA,
Switch ON,
See Figure 13
25 °C
VNO or VNC = 2.5 V,
ICOM = −100 mA,
Switch ON,
See Figure 13
25°C
ron
∆ron
VNO or VNC = 2.5 V,
ICOM = −100 mA,
Switch ON,
See Figure 13
0 ≤ (VNO or VNC) ≤ V+,
ICOM = −100 mA,
Switch ON,
See Figure 13
VNO or VNC = 1 V, 1.5 V, 2.5 V,
ICOM = −100 mA,
Switch ON,
See Figure 13
25°C
VNC or VNO = 1 V, VCOM = 4.5 V,
or
VNC or VNO = 4.5 V, VCOM = 1 V,
Switch OFF,
See Figure 14
25°C
Switch OFF,
See Figure 14
25°C
VNC or VNO = 1 V, VCOM = Open,
Switch ON,
or
See Figure 15
VNC or VNO = 4.5 V, VCOM = Open,
25°C
Peak ON
resistance
rpeak
ON-state
resistance
ON-state
resistance
match
between
channels
ON-state
resistance
flatness
NC, NO
OFF leakage
current
NC, NO
ON leakage
current
COM
OFF leakage
current
0
Full
Full
INC(OFF),
INO(OFF)
INC(PWROFF), VNC or VNO = 0 to 5.5V ,
INO(PWROFF) VCOM = 5.5V to 0,
INC(ON),
INO(ON)
1.5
0.7
4.5 V
0.05
Ω
0.1
0.15
4.5 V
0.1
0.25
Ω
0.25
−20
2
20
5.5 V
Full
0V
nA
−150
150
−1
1
−20
20
−150
2
nA
−20
Full
−1
20
0.1
1
0V
Full
µA
A
−150
5.5 V
25°C
Ω
0.1
Full
Full
V
Ω
25°C
VNC or VNO = Open, VCOM = 1 V,
Switch ON,
or
See Figure 15
VNC or VNO = Open, VCOM = 4.5 V,
Digital Control Inputs (IN1, IN2)(2)
ICOM(ON)
0.9
1.1
Full
25°C
VNC or VNO = 0 to 5.5 V,
ICOM(PWROFF)
VCOM = 5.5 V to 0,
1.1
4.5 V
Switch OFF,
See Figure 14
COM
ON leakage
current
0.8
4.5 V
25°C
ron(flat)
V+
−20
−20
20
2
µA
A
20
5.5 V
nA
Full
−150
150
Input logic
high
VIH
Full
2.4
5.5
V
Input logic low
VIL
Full
0
0.8
V
Input leakage
current
−2
2
nA
IIH, IIL
25°C
VI = 5.5 V or 0
5.5 V
µA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications
of Slow or Floating CMOS Inputs, literature number SCBA004.
Full
−1
1
3
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SCDS210 – AUGUST 2005
Electrical Characteristics for 5-V Supply(1) (continued)
V+ = 4.5 V to 5.5 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
MAX
1
2.5
5.5
UNIT
Dynamic
Turn-on time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
5V
tON
Full
4.5 V to 5.5 V
Turn-off time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
5V
tOFF
Full
4.5 V to 5.5 V
Make-beforebreak time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
25°C
5V
tMBB
Full
4.5 V to 5.5 V
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 22
25°C
5V
1
pC
Charge injection
QC
0.5
2
6.5
6
0.5
ns
10
13.5
ns
5.5
2
9.5
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
5V
18
pF
NC, NO
ON capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
5V
55
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
5V
55
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 16
25°C
5V
2
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 19
25°C
5V
95
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 20
25°C
5V
−64
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 21
25°C
5V
−64
dB
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
25°C
5V
0.004
%
10
nA
Total harmonic
distortion
Supply
25°C
Positive supply
I+
VI = V+ or GND,
Switch ON or OFF
5.5 V
current
Full
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
4
0.5
µA
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Electrical Characteristics for 3.3-V Supply(1)
V+ = 3 V to 3.6 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO,
VNC
Peak ON
resistance
rpeak
ON-state
resistance
ron
ON-state
resistance match
between
channels
ON-state
resistance
flatness
NC, NO
OFF leakage
current
NC, NO
ON leakage
current
COM
OFF leakage
current
COM
ON leakage
current
∆ron
ron(flat)
INC(OFF),
INO(OFF)
0
0 ≤ (VNO or VNC) ≤ V+,
ICOM = −100 mA,
Switch ON,
See Figure 13
25 °C
VNO or VNC = 2 V,
ICOM = −100 mA,
Switch ON,
See Figure 13
25°C
VNO or VNC = 2 V, 0.8 V,
ICOM = −100 mA,
Switch ON,
See Figure 13
0 ≤ (VNO or VNC) ≤ V+,
ICOM = −100 mA,
Switch ON,
See Figure 13
VNO or VNC = 2 V, 0.8 V,
ICOM = −100 mA,
Switch ON,
See Figure 13
25°C
VNC or VNO = 1 V, VCOM = 3 V,
or
VNC or VNO = 3 V, VCOM = 1 V,
Switch OFF,
See Figure 14
25°C
Switch OFF,
See Figure 14
25°C
Switch ON,
See Figure 15
25°C
Switch OFF,
See Figure 14
25°C
Switch ON,
See Figure 15
25°C
INC(PWROFF), VNC or VNO = 0 to 3.6 V,
INO(PWROFF) VCOM = 3.6 V to 0,
INC(ON),
INO(ON)
VNC or VNO = 1 V, VCOM = Open,
or
VNC or VNO = 3 V, VCOM = Open,
VNC or VNO = 3.6 V to 0,
ICOM(PWROFF)
VCOM = 0 to 3.6 V,
VNC or VNO = Open, VCOM = 1 V,
or
VNC or VNO = Open, VCOM = 3 V,
Digital Control Inputs (IN1, IN2)(2)
Input logic high
ICOM(ON)
Input logic low
VIH
VIL
Input leakage
current
IIH, IIL
Full
Full
1.3
3V
1.6
2
1.2
3V
1.5
1.7
25°C
0.1
Ω
Ω
Ω
0.15
Full
25°C
0.2
3V
0.15
Full
0.3
Ω
0.3
−20
2
20
3.6 V
Full
Full
V
0.15
3V
nA
−50
−1
0V
50
0.2
−15
−20
1
15
2
Full
nA
−20
−1
20
0.2
1
0V
Full
µA
A
20
3.6 V
−15
−20
15
2
µA
A
20
3.6 V
nA
Full
−20
20
Full
2
5.5
V
Full
0
0.8
V
25°C
VI = 5.5 V or 0
V+
Full
3.6 V
−2
2
20
20
nA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications
of Slow or Floating CMOS Inputs, literature number SCBA004.
5
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SCDS210 – AUGUST 2005
Electrical Characteristics for 3.3-V Supply(1) (continued)
V+ = 3 V to 3.6 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
MAX
3.5
6.5
UNIT
Dynamic
Turn-on time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
3.3 V
1.5
tON
Full
3 V to 3.6 V
0.5
Turn-off time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
3.3 V
2.5
tOFF
Full
3 V to 3.6 V
Make-beforebreak time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
25°C
3.3 V
tMBB
Full
3 V to 3.6 V
CL = 1 nF,
See Figure 22
25°C
3.3 V
3
pC
See Figure 16
25°C
3.3 V
18
pF
8
7
1
ns
11.5
14.5
ns
5.5
2
9.5
ns
Charge injection
QC
NC, NO
OFF capacitance
CNC(OFF),
CNO(OFF)
VGEN = 0,
RGEN = 0,
VNC or VNO = V+ or GND,
Switch OFF,
NC, NO
ON capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
3.3 V
56
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
3.3 V
56
pF
VI = V+ or GND,
See Figure 16
25°C
3.3 V
2
pF
BW
RL = 50 Ω,
Switch ON,
See Figure 19
25°C
3.3 V
95
MHz
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 20
25°C
3.3 V
−64
dB
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 21
25°C
3.3 V
−64
dB
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
25°C
3.3 V
0.01
%
Digital input
capacitance
Bandwidth
OFF isolation
Crosstalk
Total harmonic
distortion
CI
Supply
25°C
Positive supply
I+
VI = V+ or GND,
Switch ON or OFF
3.6 V
current
Full
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
6
10
100
nA
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SCDS210 – AUGUST 2005
Electrical Characteristics for 2.5-V Supply(1)
V+ = 2.3 V to 2.7 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO,
VNC
0 ≤ (VNO or VNC) ≤ V+,
ICOM = −8 mA,
Switch ON,
See Figure 13
25 °C
VNO or VNC = 1.8 V,
ICOM = −8 mA,
Switch ON,
See Figure 13
25°C
VNO or VNC = 1.8 V, 0.8 V,
ICOM = −8 mA,
Switch ON,
See Figure 13
0 ≤ (VNO or VNC) ≤ V+,
ICOM = −8 mA,
Switch ON,
See Figure 13
VNO or VNC = 0.8 V, 1.8 V,
ICOM = −8 mA,
Switch ON,
See Figure 13
25°C
VNC or VNO = 0.5 V, VCOM = 2.3 V,
or
VNC or VNO = 2.3 V, VCOM = 0.5 V,
Switch OFF,
See Figure 14
25°C
INC(PWROFF), VNC or VNO = 0 to 2.7 V,
INO(PWROFF) VCOM = 2.7 V to 0,
Switch OFF,
See Figure 14
25°C
VNC or VNO = 2.7 V to 0,
ICOM(PWROFF)
VCOM = 0 to 2.7 V,
Switch OFF,
See Figure 14
25°C
Switch ON,
See Figure 15
25°C
Switch ON,
See Figure 15
25°C
Peak ON
resistance
rpeak
ON-state
resistance
ron
ON-state
resistance
match
between
channels
∆ron
ON-state
resistance
flatness
NC, NO
OFF leakage
current
COM
OFF leakage
current
0
Full
Full
1.8
2.3 V
INC(OFF),
INO(OFF)
NC, NO
ON leakage
current
INC(ON),
INO(ON)
COM
ON leakage
current
ICOM(ON)
VNC or VNO = 0.5 V, VCOM = Open,
or
VNC or VNO = 2.3 V, VCOM = Open,
VNC or VNO = Open, VCOM = 0.5 V,
or
VNC or VNO = Open, VCOM = 2.3 V,
Digital Control Inputs (IN1, IN2)(2)
2.5
2.7
1.5
2.3 V
2
2.4
25°C
ron(flat)
V+
0.15
Ω
Ω
0.2
Ω
2.3 V
Full
0.2
25°C
0.6
2.3 V
0.6
Full
1
Ω
1
−20
2
20
2.3 V
Full
Full
V
nA
−50
−1
0V
50
0.1
−10
−1
1
10
0.1
1
0V
nA
−10
Full
−20
10
2
20
2.7 V
Full
µA
A
nA
−20
−20
20
2
20
2.7 V
nA
Full
−20
20
Input logic
high
VIH
Full
1.8
5.5
V
Input logic low
VIL
Full
0
0.6
V
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
VI = 5.5 V or 0
25°C
Full
2.7 V
−2
2
−20
20
nA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications
of Slow or Floating CMOS Inputs, literature number SCBA004.
7
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SCDS210 – AUGUST 2005
Electrical Characteristics for 2.5-V Supply(1) (continued)
V+ = 2.3 V to 2.7 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
4.5
MAX
UNIT
Dynamic
Turn-on time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
2.5 V
2
tON
Full
2.3 V to 2.7 V
1
8.5
Turn-off time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
2.5 V
3.5
tOFF
Full
2.3 V to 2.7 V
1.5
Make-beforebreak time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
25°C
2.5 V
tMBB
Full
2.3 V to 2.7 V
CL = 1 nF,
See Figure 22
25°C
2.5 V
4.5
pC
See Figure 16
25°C
2.5 V
18.5
pF
10.5
8.5
ns
13.5
16.5
ns
6
8.5
10
ns
Charge injection
QC
NC, NO
OFF capacitance
CNC(OFF),
CNO(OFF)
VGEN = 0,
RGEN = 0,
VNC or VNO = V+ or GND,
Switch OFF,
NC, NO
ON capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
2.5 V
56.5
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
2.5 V
56.5
pF
VI = V+ or GND,
See Figure 16
25°C
2.5 V
2
pF
BW
RL = 50 Ω,
Switch ON,
See Figure 19
25°C
2.5 V
100
MHz
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 20
25°C
2.5 V
−64
dB
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 21
25°C
2.5 V
−64
dB
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
25°C
2.5 V
0.020
%
Digital input
capacitance
Bandwidth
OFF isolation
Crosstalk
Total harmonic
distortion
CI
Supply
25°C
Positive supply
I+
VI = V+ or GND,
Switch ON or OFF
2.7 V
current
Full
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
8
10
50
nA
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SCDS210 – AUGUST 2005
Electrical Characteristics for 1.8-V Supply(1)
V+ = 1.65 V to 1.95 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO,
VNC
0 ≤ (VNO or VNC) ≤ V+,
ICOM = −2 mA,
Switch ON,
See Figure 13
25 °C
VNO or VNC = 1.5 V,
ICOM = −2 mA,
Switch ON,
See Figure 13
25°C
ron
∆ron
VNO or VNC = 1.5 V,
ICOM = −2 mA,
Switch ON,
See Figure 13
0 ≤ (VNO or VNC) ≤ V+,
ICOM = −2 mA,
Switch ON,
See Figure 13
VNO or VNC = 0.6 V, 1.5 V,
ICOM = −2 mA,
Switch ON,
See Figure 13
25°C
VNC or VNO = 0.3 V, VCOM = 1.65 V,
Switch OFF,
or
See Figure 14
VNC or VNO = 1.65 V, VCOM = 0.3 V,
25°C
Peak ON
resistance
rpeak
ON-state
resistance
ON-state
resistance
match
between
channels
ON-state
resistance
flatness
NC, NO
OFF leakage
current
NC, NO
ON leakage
current
COM
OFF leakage
current
0
Full
Full
30
2
1.65 V
INC(OFF),
INO(OFF)
3.5
INC(ON),
INO(ON)
Ω
Ω
0.4
0.4
5
1.65 V
Ω
4.5
Full
−20
2
20
1.95 V
Full
VNC or VNO = 0.3 V, VCOM = Open,
Switch ON,
or
See Figure 15
VNC or VNO = 1.65 V, VCOM = Open,
25°C
Full
nA
−50
−1
0V
50
0.1
−5
−20
1
5
2
VNC or VNO = Open, VCOM = 0.3 V,
Switch ON,
or
See Figure 15
VNC or VNO = Open, VCOM = 1.65 V,
Digital Control Inputs (IN1, IN2)(2)
25°C
nA
20
Full
−1
20
0.1
1
0V
Full
µA
A
20
1.95 V
25°C
ICOM(ON)
V
Ω
25°C
25°C
VNC or VNO = 1.95 V to 0,
ICOM(PWROFF)
VCOM = 0 to 1.95 V,
0.15
Full
Switch OFF,
See Figure 14
INC(PWROFF), VNC or VNO = 0 to 1.95 V,
INO(PWROFF) VCOM = 1.95 V to 0,
2.5
1.65 V
Switch OFF,
See Figure 14
COM
ON leakage
current
5
1.65 V
25°C
ron(flat)
V+
nA
−5
−20
5
2
20
1.95 V
nA
Full
−20
20
Input logic
high
VIH
Full
1.5
5.5
V
Input logic low
VIL
Full
0
0.6
V
Input leakage
current
IIH, IIL
25°C
VI = 5.5 V or 0
Full
1.95 V
−2
2
20
20
nA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications
of Slow or Floating CMOS Inputs, literature number SCBA004.
9
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SCDS210 – AUGUST 2005
Electrical Characteristics for 1.8-V Supply(1) (continued)
V+ = 1.65 V to 1.95 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
MAX
2.5
10
14.5
UNIT
Dynamic
Turn-on time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
1.8 V
tON
Full
1.65 V to 1.95 V
Turn-off time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
1.8 V
tOFF
Full
1.65 V to 1.95 V
Make-beforebreak time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
25°C
1.8 V
tMBB
Full
1.65 V to 1.95 V
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 22
25°C
1.8 V
5.5
pC
Charge
injection
QC
1
6.5
17
12.5
2
ns
21.5
24
ns
6.5
2.5
14
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
1.8 V
18.5
pF
NC, NO
ON
capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
1.8 V
56.5
pF
COM
ON
capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
1.8 V
56.5
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 16
25°C
1.8 V
2
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 19
25°C
1.8 V
100
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 20
25°C
1.8 V
−64
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 21
25°C
1.8 V
−64
dB
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
25°C
1.8 V
0.060
%
Total harmonic
distortion
Supply
25°C
Positive
I+
VI = V+ or GND,
Switch ON or OFF
1.95 V
supply current
Full
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
10
50
nA
W www.ti.com
SCDS210 – AUGUST 2005
TYPICAL PERFORMANCE
3.50
1.3
1.1
ron (Ω)
ron (Ω)
2.50
TA = 85°C
TA = 25°C
TA = −40°C
1.5
V+ = 1.8 V
V+ = 2.5 V
V+ = 3.3 V
V+ = 5 V
3.00
2.00
1.50
0.9
0.7
1.00
0.5
0.50
0.3
0.1
0.00
0.0
0.5
1.0
1.5
0
2.0
1
VCOM (V)
3
4
Figure 2. ron vs VCOM (V+ = 3.3 V)
Figure 1. ron vs VCOM
1.0
20
V+ = 5 V
0.8
TA = 85°C
0.7
TA = 25°C
0.6
TA = −40°C
Leakage (nA)
COM (on)
0.9
ron (Ω)
2
VCOM (V)
0.5
0.4
0
NO/NC (off)
−20
0.3
NO/NC (on)
0.2
0.1
0
1
2
3
4
5
−40
−60
6
−40
−20
VCOM (V)
40
.5
2000
1
1500
.5
NO/NC
(pwroff)
500
0
0
.5
−40
−20
0
20
40
60
80
100
Temperature (°C)
Figure 5. Leakage Current vs Temperature
1
Charge Injection (pC)
Leakage (nA)
2500
−500
−60
80
100
10
2
COM1−NC1
COM1−NO1
COM2−NC2
COM2−NO2
0
1000
60
Figure 4. Leakage Current vs Temperature
COM
(pwroff)
3000
20
Temperature (°C)
Figure 3. ron vs VCOM
3500
0
−10
−20
−30
−40
COM1−NC1
COM1−NO1
COM2−NC2
COM2−NO2
−50
−60
0
1
4
2
3
Bias Voltage (V)
5
6
Figure 6. Charge Injection (QC) vs VCOM
11
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SCDS210 – AUGUST 2005
TYPICAL PERFORMANCE
16
7
tOFF
14
6
tOFF
5
10
4
tON
8
I+ (µA)
ton/tOFF (ns)
12
6
4
2
3
2
tON
1
0
0
1
2
3
4
5
0
6
−40°C
V+ (V)
25°C
85°C
TA (5C)
Figure 8. tON and tOFF vs Temperature (V+ = 5 V)
Figure 7. tON and tOFF vs Supply Voltage
2.5
0
VIN rising
−2
2.0
−4
I+ (µA)
Gain (dB)
VIN falling
1.5
1.0
−6
−8
−10
0.5
−12
0.0
−40°C
25°C
−14
0.1
85°C
1
TA (5C)
0
0.010
−10
0.009
1000
0.008
−30
THD + (%)
Attenuation (dB)
−20
−40
−50
−60
0.007
0.006
0.005
0.004
−70
0.003
−80
0.002
−90
1
10
Frequency (MHz)
100
Figure 11. OFF Isolation vs Frequency
12
100
Figure 10. Bandwidth (Gain vs Frequency)
(V+ = 5 V)
Figure 9. tON and tOFF vs Temperature
0.1
10
Frequency (MHz)
1000
0.001
0
10
100
1000
Frequency (Hz)
10000
100000
Figure 12. Total Harmonic Distortion
vs Frequency (V+ = 5 V)
W www.ti.com
SCDS210 – AUGUST 2005
TYPICAL PERFORMANCE
250
200
I+ (µA)
150
100
50
0
−50
−40°C
25°C
85°C
TA (5C)
Figure 13. Power-Supply Current
vs Temperature (V+ = 5 V)
PIN DESCRIPTION
PIN
NAME
DESCRIPTION
1
IN1
Digital control pin to connect COM to NO or NC
2
NO1
Normally open
3
GND
Digital ground
4
NO2
Normally open
5
IN2
Digital control to connect COM to NO or NC
6
COM2
7
NC2
Normally closed
8
Power supply
9
V+
NC1
10
COM1
Power supply
Common
Normally closed
13
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SCDS210 – AUGUST 2005
PARAMETER DESCRIPTION
SYMBOL
DESCRIPTION
VCOM
Voltage at COM
VNC
Voltage at NC
VNO
Voltage at NO
ron
Resistance between COM and NC or COM and NO ports when the channel is ON
rpeak
Peak on-state resistance over a specified voltage range
∆ron
Difference of ron between channels in a specific device
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INC(OFF)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under worst-case
input and output conditions
INC(PWROFF)
Leakage current measured at the NC port during the power-down condition, V+ = 0
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under worst-case
input and output conditions
INO(PWROFF)
Leakage current measured at the NO port during the power-down condition, V+ = 0
INC(ON)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
(COM) open
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(PWROFF)
Leakage current measured at the COM port during the power-down condition, V+ = 0
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON state
and the output (NC or NO) open
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VI
Voltage at the control input (IN)
IIH, IIL
Leakage current measured at the control input (IN)
tON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning ON.
tOFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning OFF.
tMBB
Make-before-break time. This parameter is measured under the specified range of conditions and by the propagation delay
between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC, NO, or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ∆VCOM, CL is the load capacitance and ∆VCOM is the change in analog output voltage.
14
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SCDS210 – AUGUST 2005
PARAMETER DESCRIPTION (continued)
SYMBOL
DESCRIPTION
CNC(OFF)
CNO(OFF)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
CNC(ON)
CNO(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
CCOM(ON)
CI
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
Capacitance of control input (IN)
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific frequency,
with the corresponding channel (NC to COM or NO to COM) in the OFF state.
XTALK
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to NC). This
is measured in a specific frequency and in dB.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is −3 dB below the DC gain.
THD
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root mean
square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental harmonic.
I+
Static power-supply current with the control (IN) pin at V+ or GND
15
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SCDS210 – AUGUST 2005
PARAMETER MEASUREMENT INFORMATION
V+
VNC NC
COM
+
VCOM
Channel ON
VNO NO
r on +
IN
VI
ICOM
VCOM * VNO or VNC
W
I COM
VI = VIH or VIL
+
GND
Figure 14. ON-State Resistance (ron)
V+
VNC NC
COM
+
VNO NO
VCOM
+
IN
OFF-State Leakage Current
Channel OFF
VI = VIH or VIL
VI
+
GND
Figure 15. OFF-State Leakage Current (INC(OFF),INC(PWROFF),INO(OFF),INO(PWROFF),ICOM(OFF),ICOM(PWROFF))
V+
VNC NC
+
COM
VNO NO
VI
IN
VCOM
ON-State Leakage Current
Channel ON
VI = VIH or VIL
+
GND
Figure 16. ON-State Leakage Current (ICOM(ON), INC(ON), INO(ON))
16
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SCDS210 – AUGUST 2005
V+
Capacitance
Meter
VNC
NC
VNO
NO
VBIAS = V+ or GND
VI = V+ or GND
VCOM COM
IN
VI
VBIAS
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
GND
Figure 17. Capacitance (CI, CCOM(ON), CNC(OFF), CNO(OFF), CNC(ON), CNO(ON))
V+
NC or NO VNC or VNO
VCOM
TEST
RL
CL
VCOM
tON
50 Ω
35 pF
V+
tOFF
50 Ω
35 pF
V+
COM
CL(2)
NC or NO
RL
IN
VI
Logic
Input(1)
CL(2)
GND
RL
V+
Logic
Input
(VI)
50%
50%
0
tON
Switch
Output
(VNC or VNO)
tOFF
90%
90%
(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
(2) CL includes probe and jig capacitance.
Figure 18. Turn-On (tON) and Turn-Off Time (tOFF)
17
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SCDS210 – AUGUST 2005
V+
VCOM
VI
Logic
Input
(VI)
VNC
NC
COM
VNO CL(2)
NO
RL
Switch
Output
CL(2)
RL
VCOM = V+
RL = 50 Ω
CL = 35 pF
GND
0
VNC
IN
Logic
Input(1)
V+
50%
0.8 VOUT
0.8 VOUT
VNQ
tMBB
(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
(2) CL includes probe and jig capacitance.
Figure 19. Make-Before-Break Time (tMBB)
V+
Network Analyzer
50 W
VNC
NC
Channel ON: NC to COM
COM
Source
Signal
VCOM
VI = V+ or GND
NO
Network Analyzer Setup
IN
VI
50 W
+
Source Power = 0 dBm
(632-mV P-P at 50-W load)
GND
DC Bias = 350 mV
Figure 20. Bandwidth (BW)
V+
Network Analyzer
Channel OFF: NC to COM
50 W
VNC NC
VI = V+ or GND
COM
Source
Signal
50 W
VCOM
NO
Network Analyzer Setup
IN
50 W
Source Power = 0 dBm
(632-mV P-P at 50-W load)
VI
+
GND
DC Bias = 350 mV
Figure 21. OFF Isolation (OISO)
18
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SCDS210 – AUGUST 2005
V+
Network Analyzer
Channel ON: NC to COM
50 W
VNC
Channel OFF: NO to COM
NC
VCOM
Source
Signal
VNO
VI
50 W
VI = V+ or GND
NO
Network Analyzer Setup
50 W
IN
+
Source Power = 0 dBm
(632-mV P-P at 50-W load)
GND
DC Bias = 350 mV
Figure 22. Crosstalk (XTALK)
V+
RGEN
VGEN
Logic
Input
(VI)
OFF
ON
OFF V
IL
NC or NO
COM
+
VIH
VCOM
∆VCOM
VCOM
NC or NO
CL(2)
VI
VGEN = 0 to V+
RGEN = 0
CL = 1 nF
QC = CL × ∆VCOM
VI = VIH or VIL
IN
Logic
Input(1)
GND
(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
(2) CL includes probe and jig capacitance.
Figure 23. Charge Injection (QC)
VI = VIH or VIL
RL = 600 Ω
fSOURCE = 20 Hz to 20 kHz CL = 50 pF
Channel ON: COM to NO
VSOURCE = V+ P-P
V+/2
V+
Audio Analyzer
RL
10 mF
Source
Signal
10 mF
NO
COM
600 W
600 W
NC
600 W
VI
CL(1)
IN
GND
(1) CL includes probe and jig capacitance.
Figure 24. Total Harmonic Distortion (THD)
19
PACKAGE OPTION ADDENDUM
www.ti.com
29-Aug-2005
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TS5A23160DGSR
ACTIVE
MSOP
DGS
10
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23160DGSRE4
ACTIVE
MSOP
DGS
10
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23160DGST
ACTIVE
MSOP
DGS
10
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23160DGSTE4
ACTIVE
MSOP
DGS
10
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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