UT54ACS244/UT54ACTS244 Radiation-Hardened Octal Buffers & Line Drivers, Three-State Outputs FEATURES PINOUTS 20-Pin DIP Top View Three-state outputs drive bus lines or buffer memory address registers radiation-hardened CMOS - Latchup immune High speed Low power consumption Single 5 volt supply Available QML Q or V processes Flexible package - 20-pin DIP - 20-lead flatpack DESCRIPTION The UT54ACS244 and the UT54ACTS244 are non-inverting octal buffer and line drivers which improve the performance and density of three-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters. 1 20 2 19 VDD 2G 2Y4 3 18 1Y1 1A2 4 17 2A4 2Y3 5 16 1Y2 1A3 2Y2 6 15 7 14 2A3 1Y3 1A4 2Y1 8 13 9 12 2A2 1Y4 VSS 10 11 2A1 20-Lead Flatpack Top View 1G 1 20 1A1 2 19 2G 2Y4 3 18 1Y1 1A2 2Y3 4 17 OUTPUT 5 16 2A4 1Y2 The devices are characterized over full military temperature range of -55 C to +125 C. FUNCTION TABLE INPUTS 1G 1A1 VDD 1G, 2G A Y 1A3 6 15 2A3 L L L 2Y2 7 14 1Y3 L H H 1A4 2Y1 VSS 8 13 9 12 10 11 2A2 1Y4 2A1 H X Z LOGIC SYMBOL 1G (1) EN (2) (18) (4) 1A2 (6) 1A3 (8) 1A4 (16) 1A1 2G (19) (14) (12) 1Y2 1Y3 1Y4 EN (11) (9) (13) 2A2 (15) 2A3 (17) 2A4 (7) 2A1 1Y1 (5) (3) 2Y1 2Y2 2Y3 2Y4 Note: 1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. 159 RadHard MSI Logic UT54ACS244/UT54ACTS244 LOGIC DIAGRAM 1G (1) 1A1 1A2 1A3 1A4 2G (19) (2) (18) (4) (16) (6) (14) (8) (12) 1Y1 2A1 1Y2 2A2 1Y3 2A3 1Y4 2A4 (11) (9) (13) (7) (15) (5) (17) (3) 2Y1 2Y2 2Y3 2Y4 RADIATION HARDNESS SPECIFICATIONS 1 PARAMETER LIMIT UNITS Total Dose 1.0E6 rads(Si) SEU Threshold 2 80 MeV-cm2/mg SEL Threshold 120 MeV-cm2/mg Neutron Fluence 1.0E14 n/cm2 Notes: 1. Logic will not latchup during radiation exposure within the limits defined in the table 2. Device storage elements are immune to SEU affects. ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER LIMIT UNITS VDD Supply voltage -0.3 to 7.0 V VI/O Voltage any pin -.3 to VDD +.3 V TSTG Storage Temperature range -65 to +150 C TJ Maximum junction temperature +175 C TLS Lead temperature (soldering 5 seconds) +300 C Thermal resistance junction to case 20 C/W II DC input current 10 mA PD Maximum power dissipation 1 W JC Note: 1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RadHard MSI Logic 160 UT54ACS244/UT54ACTS244 RECOMMENDED OPERATING CONDITIONS 161 SYMBOL PARAMETER LIMIT UNITS VDD Supply voltage 4.5 to 5.5 V VIN Input voltage any pin 0 to VDD V TC Temperature range -55 to + 125 C RadHard MSI Logic UT54ACS244/UT54ACTS244 DC ELECTRICAL CHARACTERISTICS 7 (VDD = 5.0V 10%; V SS = 0V 6, -55 C < TC < +125 C) SYMBOL VIL VIH IIN PARAMETER CONDITION MIN Low-level input voltage 1 ACTS ACS High-level input voltage 1 ACTS ACS MAX UNIT 0.8 .3VDD V .5VDD .7VDD V Input leakage current ACTS/ACS VIN = VDD or VSS Low-level output voltage 3 ACTS ACS IOL = 12.0mA IOL = 100 A High-level output voltage 3 ACTS ACS IOH = -12.0mA IOH = -100 A Output current10 VIN = VDD or VSS (Sink) VOL = 0.4V Output current10 VIN = VDD or VSS (Source) VOH = VDD - 0.4V IOZ Three-state output leakage current VO = VDD and VSS -30 30 A IOS Short-circuit output current 2 ,4 ACTS/ACS VO = VDD and VSS -300 300 mA Ptotal Power dissipation 2,8,9 CL = 50pF 2.0 mW/ MHz IDDQ Quiescent Supply Current VDD = 5.5V 10 A Quiescent Supply Current Delta For input under test 1.6 mA VOL VOH IOL IOH IDDQ ACTS -1 1 A 0.40 0.25 V .7VDD VDD - 0.25 V 12 mA -12 mA VIN = VDD - 2.1V For all other inputs VIN = VDD or VSS VDD = 5.5V CIN COUT Input capacitance 5 = 1MHz @ 0V 15 pF Output capacitance 5 = 1MHz @ 0V 15 pF RadHard MSI Logic 162 UT54ACS244/UT54ACTS244 Notes: 1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V IH = VIH (min) + 20%, - 0%; VIL = VIL(max) + 0%, - 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are guaranteed to VIH(min) and VIL(max). 2. Supplied as a design limit but not guaranteed or tested. 3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765 pF/MHz. 4. Not more than one output may be shorted at a time for maximum duration of one second. 5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS at frequency of 1MHz and a signal amplitude of 50mV rms maximum. 6. Maximum allowable relative shift equals 50mV. 7. All specifications valid for radiation dose 1E6 rads(Si). 8. Power does not include power contribution of any TTL output sink current. 9. Power dissipation specified per switching output. 10. This value is guaranteed based on characterization data, but not tested. 163 RadHard MSI Logic UT54ACS244/UT54ACTS244 AC ELECTRICAL CHARACTERISTICS 2 (VDD = 5.0V 10%; V SS = 0V 1, -55 C < TC < +125 C) SYMBOL PARAMETER MINIMUM MAXIMUM UNIT tPLH Input to Yn 1 11 ns tPHL Input to Yn 1 11 ns tPZL G low to Yn active 2 12 ns tPZH G low to Yn active 2 12 ns tPLZ G high to Yn three-state 2 12 ns tPHZ G high to Yn three-state 2 12 ns Notes: 1. Maximum allowable relative shift equals 50mV. 2. All specifications valid for radiation dose 1E6 rads(Si). RadHard MSI Logic 164