MMBT6027 Silicon programmable unijunction transistor (PUT′s) in package SOT-23 0.5 max 2.55 max 1.4 max 3 1.9 1.2 max 1 3.1 max 2 Pinouts: 1- Anode, 2- Cathode, 3- Gate Ratings (T A = 25°C) Symbol VAK VGKF VGKR VGAR IT ITRM PT Parameter, units Limits ± 40 40 -5 40 150 *Anode to cathode voltage, V *Gate to cathode forward voltage, V *Gate to cathode reverse voltage, V *Gate to anode reverse voltage, V *DC forward anode current, mA Repetitive peak forward current, A 100µs Pulse width, 1% duty cycle *20µs Pulse width, 1% duty cycle *Power dissipation, mW * - Anode positive, RGA =1000Ω; Anode negative, RGA=open 1 2 300 Electrical Characteristics (T A = 25°C) Symbol IP IGAO IGKS VF VO VT IV tR Parameter, units, test conditions Peak current, µA, VS=10V, RG=10kΩ Gate to anode leakage current, nA, VS=40V, cathode open Gate to cathode leakage current, nA, VS=40V, anode to cathode shorted Forward voltage, V, IF=50mA Peak Peak output voltage, V, VG=20V, CC=0.2 µF Offset voltage, V VS=10V, RG=10kΩ Valley current, µA, VS=10V, RG=10kΩ Pulse voltage rise time, ns UB=20V, CC =0.2 µF Planeta Electronic company min Limits typ max 4 5 1 10 5 50 0.8 6 0.2 70 1.5 11 0.35 0.6 150 40 80 JSC Planeta, 2/13, Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia Ph/Fax: +7 (81622) 3-17-36, 3-32-86 E-mail: [email protected] http://www.planetasemi.com