NTE6402 Programmable Unijunction Transistor (PUT) Description: The NTE6402 is a 3–terminal silicon planer passivated PNP device available in the standard plastic low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and cathode. This device has been characterized as a Programmable Unijunction Transistor (PUT), offering many advantages over conventional unijunction transistors. The designer can select R1 and R2 to program unijunction characteristics such as intrinsic standoff ratio, Interbase resistance, peak–point emitter current, and valley–point current to meet his particular needs. PUT’s are specifically charactrized for long interval timers and other applications requiring low leakage and low peak point current. PUT’s similar types have been characterized Applications: D SCR Trigger D Pulse and Timing Circuits D Oscillators D Sensing Circuits D Sweep Circits Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Gate–Cathode Forward Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +40V Gate–Cathode Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –5V Gate–Anode Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +40V Anode–Cathode Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40V DC Anode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Peak Anode, Recurrent Forward Current Pulse Width = 100µs, Duty Cycle = 1% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Pulse Width = 20µs, Duty Cycle = 1% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Anode, Non–Recurrent Forward Current (10µs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20mA Capacitive Discharge Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250µJ Total Average Power (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Operating Ambient Temperature Range (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50° to +100°C Note 1. Derate currents and powers 1%/°C above 25°C. Note 2. E = 1/2 CV2 capacitor discharge energy with no current limiting. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Peak Current IP Offset Voltage VT Valley Current IV Anode Gate–Anode Leakage Current Gate–Cathode Leakage Current IGAO IGKS Test Conditions Min Typ Max Unit VS = 10V, RG = 1MΩ – – 2 µA VS = 10V, RG = 10kΩ – – 5 µA VS = 10V, RG = 1MΩ 0.2 – 1.6 V VS = 10V, RG = 10kΩ 0.2 – 0.6 V VS = 10V, RG = 1MΩ – – 50 µA VS = 10V, RG = 10kΩ 70 – – µA VS = 10V, RG = 200Ω 1.5 – – mA VS = 40V, TA = +25°C – – 10 nA VS = 40V, TA = +75°C – – 100 nA VS = 40V, Anode–Cathode Short – – 100 nA IF = 50mA – – 1.5 V Forward Voltage VF Pulse Output Voltage VO 6 – – V tr – – 80 ns Pulse Voltage Rate of Rise .135 (3.45) Min .210 (5.33) Max .140 (3.55) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max .190 (4.82) Min .065 (1.65) .245 (6.23) Max .500 (12.7) Min A G K .018 (0.45) Dia Max .100 (2.54) .050 (1.27) A G K .100 (2.54) .105 (2.67) Max .165 (4.2) Max .205 (5.2) Max .105 (2.67) Max TO92 .200 (5.08) Max TO98