IRF 10BQ015

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PD - 2.396A
10BQ015
SCHOTTKY RECTIFIER
1 Amp
Major Ratings and Characteristics
Characteristics
10BQ015
Units
IF(AV) Rectangular
waveform
1.0
A
VRRM
15
V
IFSM @ tp = 5µs sine
140
A
VF @ 1.0Apk, T J = 75°C
0.30
V
-55 to 100
°C
TJ
Description / Features
The 10BQ015 surface-mount Schottky rectifier has been designed for applications requiring very low forward drop and
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging and reverse battery protection.
• Small footprint, surface mountable
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long-term
reliability
SMB
CASE STYLE
CASE OUTLINE
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10BQ015
Voltage Ratings
Part number
VR
10BQ015
Max. DC Reverse Voltage (V)
15
VRWM Max. Working Peak Reverse Voltage (V)
25
Absolute Maximum Ratings
Parameters
IF(AV)
10BQ Units Conditions
Max. Average Forward Current
1.0
A
50% duty cycle @ TC = 78°C, rectangular waveform
Max. Peak One Cycle Non - Repetitive
140
A
5µs Sine or 3µs Rect. pulse
Following any rated load condition
Surge Current — see Fig. 7
40
10ms Sine 0r 6ms Rect. pulse
and with rated VRRM applied.
EAS
Non - Repetitive Avalanche Energy
5.0
mJ
IAR
Repetitive Avalanche Current
0.2
A
See Fig. 5
IFSM
T J = 25°C, IAS = 0.2A, L = 4.2mH
Current decaying linearly to zero in 1µsec
Frequency limited by TJ max. VA = 1.5 X VR typical
Electrical Specifications
Parameters
VFM
IRM
10BQ
Units
Max. Forward Voltage Drop
0.34
V
@ 1.0A
See Fig. 1
0.40
V
@ 2.0A
0.30
V
@ 1.0A
0.38
V
@ 2.0A
Max. Reverse Leakage Current
Conditions
T J = 25°C
T J = 75°C
0.50
mA
T J = 25°C
See Fig. 2
12
mA
T J = 100°C
CT
Max. Junction Capacitance
390
pF
VR = 5VDC, (test signal range 100KHz to 1MHz) 25°C
LS
Typical Series Inductance
2.0
nH
Measured lead to lead 5mm from package body
dv/dt
Max. Voltage Rate of Change
6,000
V/µs
VR = rated VR
(Rated VR)
Thermal-Mechanical Specifications
10BQ
Units
TJ
Max.Junction Temperature Range
Parameters
-55 to 100
°C
T STG
Max. Storage Temperature Range
-55 to 100
°C
140
°C/W
DC operation — See Fig. 4
36
°C/W
DC operation
RthJA Max. Thermal Resistance, Junction
Conditions
to Ambient
RthJL
Max. Thermal Resistance, Junction
to Lead ➁
wt
Approximate Weight
Case Style
0.10
g
SMB
Similar to DO-214AA
Pulse Width < 300µs, Duty Cycle < 2%
➁ Mounted 1 inch square PCB, thermal probe connected to lead 2mm from package
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10BQ015
100
10
10
TJ = 100°C
75°C
1
50°C
25°C
0.1
0.01
0
3
6
9
12
15
Reverse Voltage - V (V)R
1
Fig. 2 Typical Values of Reverse Current Vs. Reverse
Voltage
1000
TJ = 75°C
TJ = 25°C
TJ = 25°C
100
0.1
0.1
0.2
0.3
0.4
0.5
Forward Voltage Drop - V
0.6
0.7
(V)
FM
10
0
Fig. 1 Max. Forward Voltage Drop
Characteristics
4
8
12
16
Reverse Voltage - V (V) R
Fig. 3 Typical Junction CapacitanceVs. Reverse Voltage
100
D = 0.50
D = 0.33
10 D = 0.25
PDM
D = 0.17
D = 0.08
t
Single Pulse
(Thermal Resistance)
2. Peak T =J P
0.1
0.00001
0.0001
0.001
1
t2
Notes:
1. Duty factor D = t / t
1
0.01
0.1
1
xZ
DM
1
2
+T
thJC
10
t , Rectangular Pulse Duration (Seconds)
1
Fig. 4 Max. Thermal Impedance ZthJL Characteristics
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C
100
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10BQ015
100
0.6
D = 0.08
D = 0.17
0.5 D = 0.25
D = 0.33
D = 0.50
0.4
10BQ015
R t h J L (D C ) = 3 6 °C /W
95
90
DC
RMS Limit
85
0.3
DC
80
0.2
75
0.1
70
0
0 .4
0 .8
1.2
1. 6
0
2
0
A v e ra g e F o r w a rd C u rre n t - I F ( A V ) (A )
0.4
0.8
1.2
Average Forward Current - I
Fig. 5 Max. Allowable Case Temperature Vs.
Average Forward Current
1.6
(A)
F(AV)
Fig. 6 Forward Power Loss Characteristics
1000
At Any Rated Load Condition
And With Rated V RRM
Applied
Following Surge
L
H IG H -S P E E D
S W IT C H
D UT
BRD
100
R g = 2 5 oh m
C U RR E NT
M O N IT O R
F R E E -W H E E L
D IO D E
4 0H FL 40 S 0 2
+
V d = 25 V o lt
10
10000
1
10
100
1000
Square Wave Pulse Duration - t (microsec)
p
Fig.7 Max. Non-Repetitive Surge Current
Fig. 8 Unclamped Inductive Test Circuit
Refer to the Appendix Section for the following:
Appendix D: Tape and Reel Information — See page 338.
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