KIC7WZ125FK SEMICONDUCTOR SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT TECHNICAL DATA DUAL BUS BUFFER FEATURES ・Super High Speed : tPD=2.6ns(Typ.) into 50pF at VCC=5V. ・High Output Driver : ±24mA at VCC=3V. ・Power Down High Impedance inputs/outputs. B ・Outputs are Overvoltage Tolerant is 3-STATE mode. C ・Wide Operating Voltage Range : VCC(opr)=1.65~5.5V. DIM A B 8 D D A E D 1 4 5 CHARACTERISTIC SYMBOL RATING UNIT Power Supply Voltage VCC -0.5~7 V DC Input Voltage VIN -0.5~7 V DC Output Voltage VOUT -0.5~7 V Input Diode Current IIK -50 mA Output Diode Current IOK -50 mA DC Output Current IOUT ±50 mA DC VCC/ground Current ICC ±100 mA Power Dissipation PD 200 mW Storage Temperature Range Tstg -65～150 ℃ Lead Temperature (10s) TL 260 ℃ D E F G 0.5 0.2+0.05/-0.04 _ 0.1 0.7+ _ 0.04 0.12 + H 0 ~ 0.1 F MAXIMUM RATINGS (Ta=25℃) C MILLIMETERS _ 0.1 2.0 + _ 0.1 3.1+ _ 0.1 2.3 + H G US8 MARKING Type Name Z125 Lot No. Logic Diagram G1 A1 G2 A2 (1) EN (6) (2) Y1 (7) (3) (5) Y2 PIN CONNECTION(TOP VIEW) Truth Table INPUTS OUTPUTS G A Y H X Z L L L L H H G1 1 8 VCC A1 2 7 G2 Y2 3 6 Y1 GND 4 5 A2 X : Don t Care Z : High Impedance 2002. 5. 13 Revision No : 0 1/4 KIC7WZ125FK Recommended Operating Conditions CHARACTERISTIC SYMBOL Supply Voltage VCC Input Voltage VIN RATING 1.65~5.5 1.5~5.5 Topr Operating Temperature V (Note1) 0~VCC VOUT Output Voltage UNIT V 0~VCC (Note2) 0~5.5 (Note3) V -40~85 ℃ 0～20 (VCC=1.8±0.15V, 2.5±0.2V) tr, tf Input Rise and Fall Time 0～10 (VCC=3.3V±0.3V) ns/V 0～5 (VCC=5.0V±0.5V) Note1 : Data retention only. Note2 : Active State. Note3 : 3-STATE ELECTRICAL CHARACTERISTICS (DC Characteristics) CHARACTERISTIC High Level TEST CONDITION SYMBOL VIH - Ta=25℃ MIN. TYP. MAX. MIN. MAX. 1.65~1.95 0.75× VCC - - 0.75× VCC - - - 0.7×VCC - 2.3~5.5 0.7×VCC Input Voltage Low Level VIL 1.65~1.95 - - 0.25× VCC - 0.25× VCC 2.3~5.5 - - 0.3×VCC - 0.3×VCC 1.65 1.55 1.65 - 1.55 - 2.3 2.2 2.3 - 2.2 - 3.0 2.9 3.0 - 2.9 - 4.5 4.4 4.5 - 4.4 - IOH=-4mA 1.65 1.29 1.52 - 1.29 - IOH=-8mA 2.3 1.9 2.15 - 1.9 - IOH=-16mA 3.0 2.4 2.80 - 2.4 - IOH=-24mA 3.0 2.3 3.68 - 2.3 - IOH=-32mA 4.5 3.8 4.20 - 3.8 - 1.65 - 0 0.1 - 0.1 2.3 - 0 0.1 - 0.1 3.0 - 0 0.1 - 0.1 - IOH=-100μA High Level VOH VIN= VIH or VIL Output Voltage IOL=100μA Low Level VOL VIN= VIH or VIL Ta=-40~85℃ VCC(V) UNIT V V 4.5 - 0 0.1 - 0.1 IOL=4mA 1.65 - 0.08 0.24 - 0.24 IOL=8mA 2.3 - 0.10 0.30 - 0.30 IOL=16mA 3.0 - 0.15 0.40 - 0.40 IOL=24mA 3.0 - 0.22 0.55 - 0.55 IOL=32mA 4.5 - 0.22 0.55 - 0.55 0~5.5 - - ±0.1 - ±1 μA 1.65~5.5 - - ±0.5 - ±5 μA V Input Leakage Current IIN VIN=5.5V or GND 3-STATE Output Leakage IOZ VIN=VIH or VIL 0≤VOUT≤5.5V Power Off Leakage Current IOFF VIN or VOUT=5.5V 0.0 - - 1 - 10 μA Quiescent Supply Current ICC VIN=5.5V or GND 1.65~5.5 - - 1 - 10 μA 2002. 5. 13 Revision No : 0 2/4 KIC7WZ125FK Noise Characteristics CHARACTERISTIC TEST CONDITION SYMBOL Ta=-25℃ VCC(V) TYP. MAX. UNIT Quiet Output Maximum Dynamic VOL VOLP (Note 1) CL=50pF 5.0 - 1.0 V Quiet Output Minimum Dynamic VOL VOLV (Note 1) CL=50pF 5.0 - 1.0 V Quiet Output Minimum Dynamic VOH VOHV (Note 1) CL=50pF 5.0 - 4.0 V Minimum HIGH Level Dynamic Input Voltage VIHD (Note 1) CL=50pF 5.0 - 3.5 V Maximum LOW Level Dynamic Input Voltage VILD (Note 1) CL=50pF 5.0 - 1.5 V Note 1 : Characteristic guaranteed by design. AC Characteristics CHARACTERISTIC Propagation Delay AN to YN (Figures 1,3) TEST CONDITION SYMBOL tPLH tPHL CL=15pF, RD=1MΩ S1=Open Ta=25℃ Ta=-40~85℃ VCC(V) MIN. TYP. MAX. MIN. MAX. 1.8±0.15 2.0 - 12.0 2.0 13.0 2.5±0.2 1.0 - 7.5 1.0 8.0 3.3±0.3 0.8 - 5.2 0.8 5.5 5.0±0.5 0.5 - 4.5 0.5 4.8 UNIT ns tPLH tPHL CL=50pF, RD=500Ω S1=Open 3.3±0.3 1.2 - 5.7 1.2 6.0 5.0±0.5 0.8 - 5.0 0.8 5.3 tOSLH tOSHL CL=50pF, RD=500Ω S1=Open 3.3±0.3 - - 1.0 - 1.0 5.0±0.5 - - 0.8 - 0.8 1.8±0.15 3.0 - 14.0 3.0 15.0 tPZL tPZH CL=50pF, RD, RU=500Ω S1=GND for tPZH S1=V1 for tPZL V1=2×VCC 2.5±0.2 1.8 - 8.5 1.8 9.0 3.3±0.3 1.2 - 6.2 1.2 6.5 5.0±0.5 0.8 - 5.5 0.8 5.8 CL=50pF, RD, RU=500Ω S1=GND for tPZH S1=V1 for tPZL V1=2×VCC 1.8±0.15 2.5 - 12.0 2.5 13.0 2.5±0.2 1.5 - 8.0 1.5 8.5 3.3±0.3 0.8 - 5.7 0.8 6.0 5.0±0.5 0.3 - 4.7 0.3 5.0 CIN 0 - 2.5 - - - pF Output Capacitance COUT 5.0 - 4 - - - pF Power Dissipation Capacitance (Figure 2) CPD 3.3 - 10 - - - 5.0 - 12 - - - Output to Output Skew (Figures 1,3) (Note 2) Output Enable Time (Figures 1,3) Output Disable Time (Figures 1,3) Input Capacitance tPLZ tPHZ (Note 3) ns ns ns ns pF Note 2 : Characteristic guaranteed by design. tOSLH=|tPLHmax-tPLHmin| ; tOSHL=|tPHLmax-tPHLmin|. Note 3 : CPD is defined as the value of the internal equivalent capacitance which is derived from dynamic operating current consumption (ICCD) at no output loading and operating at 50% duty cycle. (See Figure 2.) CPD is related to ICCD dynamic operating current by the exprssion : ICCD=CPD・VCC・fIN+ICC 2002. 5. 13 Revision No : 0 3/4 KIC7WZ125FK AC Loading and Waveforms VCC VIN OPEN GND OE INPUT RU t r =3ns CL VCC 90% 50% 10% INPUT tw OUTPUT INPUT t f =3ns GND t PHL t PLH VOH RD OUTPUT 50% 50% VOL C L includes load and stray capacitance Input PRR=1.0MHz ; t w =500ns t f =3ns FIGURE 1. AC Test Circuit VCC t r =3ns 90% 50% 10% t PLZ OE INPUT t PZL A VCC GND VTRI INPUT OE OUTPUT 50% OUTPUT t PZL VOL +0.3V t PLZ VOL VOH Input=AC Waveform ; t r =tf =1.8ns; PRR=10MHz ; Duty Cycle=50% FIGURE 2. I CCD Test Circuit 2002. 5. 13 Revision No : 0 OUTPUT 50% VOH - 0.3V VTRI FIGURE 3. AC Waveforms 4/4