KIC7WZ86FK SEMICONDUCTOR SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT TECHNICAL DATA 2 INPUT EXCLUSIVE OR GATE FEATURES ・High output drive : ±24mA(min.) @VCC=3V. ・Super high speed operation : tpd 2.9ns(typ.) @VCC=5V, 50pF. ・Operation voltage range : VCC(opr)=1.65~5.5V. B ・Latch-up performance : ±200V or more (EIAJ) C : ±2000V or more (MIL) 1 D D A E D ・Power down protection is provided on all inputs and outputs. DIM A B 8 5 D E F G 0.5 0.2+0.05/-0.04 _ 0.1 0.7+ _ 0.04 0.12 + H 0 ~ 0.1 F 4 C MILLIMETERS _ 0.1 2.0 + _ 0.1 3.1+ _ 0.1 2.3 + MAXIMUM RATINGS (Ta=25℃) H CHARACTERISTIC SYMBOL RATING UNIT Power Supply Voltage VCC -0.5~7 V DC Input Voltage VIN -0.5~7 V DC Output Voltage VOUT -0.5~7 V Input Diode Current IIK -50 mA Output Diode Current IOK -50 mA DC Output Current IOUT ±50 mA DC VCC/ground Current ICC ±100 mA Power Dissipation PD 200 mW Storage Temperature Range Tstg -55～150 ℃ Lead Temperature (10s) TL -55～150 ℃ G US8 MARKING Type Name Z86 Lot No. Truth Table A B Y L L L L H H H L H H H L PIN CONNECTION(TOP VIEW) 1A 1 8 VCC 1B 2 7 1Y OUT1Y 2Y 3 6 2B OUT2Y GND 4 5 2A Logic Diagram IN1A IN1B =1 IN2A IN2B 2002. 5. 13 Revision No : 0 1/3 KIC7WZ86FK Recommended Operating Conditions CHARACTERISTIC SYMBOL Supply Voltage VCC Input Voltage VIN RATING 1.65~5.5 1.5~5.5 Operating Temperature Topr Input Rise and Fall Time dt/dv V (Note1) 0~5.5 VOUT Output Voltage UNIT V 0~5.5 (Note2) 0~VCC (Note3) V -40~85 ℃ 0~20 (VCC=1.8V±0.15V, 2.5V±0.2V) 0~10 (VCC=3.3V±0.3V) ns/V 0~5 (VCC=5.5V±0.5V) Note1 : Data retention only. Note2 : VCC=0V. Note3 : High or low state ELECTRICAL CHARACTERISTICS DC Characteristics CHARACTERISTIC High Level TEST CONDITION SYMBOL VIH - Ta=25℃ VCC(V) MIN. TYP. MAX. MIN. MAX. 1.65~1.95 0.75× VCC - - 0.75× VCC - - - 0.7×VCC - - 0.25× VCC 2.3~5.5 0.7×VCC Input Voltage Low Level VIL 1.65~1.95 - - 0.25× VCC 2.3~5.5 - - 0.3×VCC - 0.3×VCC 1.65 1.55 1.65 - 1.55 - 2.3 2.2 2.3 - 2.2 - 3.0 2.9 3.0 - 2.9 - 4.5 4.4 4.5 - 4.4 - IOH=-4mA 1.65 1.29 1.52 - 1.29 - IOH=-8mA 2.3 1.9 2.15 - 1.9 - IOH=-16mA 3.0 2.4 2.80 - 2.4 - IOH=-24mA 3.0 2.3 2.68 - 2.3 - IOH=-32mA 4.5 3.8 4.20 - 3.8 - 1.65 - 0 0.1 - 0.1 2.3 - 0 0.1 - 0.1 3.0 - 0 0.1 - 0.1 4.5 - 0 0.1 - 0.1 IOL=4mA 1.65 - 0.08 0.24 - 0.24 IOL=8mA 2.3 - 0.10 0.30 - 0.30 IOL=16mA 3.0 - 0.15 0.40 - 0.40 IOL=24mA 3.0 - 0.22 0.55 - 0.55 IOL=32mA 4.5 - 0.22 0.55 - 0.55 - IOH=-100μA High Level VOH VIN= VIH or VIL Output Voltage IOL=100μA Low Level VOL VIN= VIH or VIL Ta=-40~85℃ UNIT V V V Input Leakage Current IIN VIN=5.5V or GND 0~5.5 - - ±1 - ±1 μA Power Off Leakage Current IOFF VIN or VOUT=5.5V 0.0 - - 1 - 10 μA Quiescent Supply Current ICC VIN=5.5V or GND 1.65~5.5 - - 1 - 10 μA 2002. 5. 13 Revision No : 0 2/3 KIC7WZ86FK AC Characteristics (unless otherwise specified, Input : tr=tf=3ns) CHARACTERISTIC TEST CONDITION SYMBOL Propagation delay time tPLH tPHL CL=15pF, RL=1MΩ CL=50pF, RL=500Ω Input Capacitance CIN Power Dissipation Capacitance CPD (Note) Ta=25℃ Ta=-40~85℃ VCC(V) MIN. TYP. MAX. MIN. MAX. 1.8±0.15 2.0 6.7 12.5 2.0 13.0 2.5±0.2 1.0 4.1 7.0 1.2 7.5 3.3±0.3 0.8 3.0 4.8 0.8 5.2 5.0±0.5 0.5 2.2 3.5 0.5 3.8 3.3±0.3 1.2 3.8 5.4 1.2 5.9 5.0±0.5 0.8 2.9 4.2 1.0 4.6 0~5.5 - 2.5 - - - 3.3 - 15 - - - 5.5 - 19 - - - UNIT ns ns pF pF Note : CPD is defined as the value of the internal equivalent capacitance which is derived from dynamic operating current consumption (ICCD) at no output loading and operating at 50% duty cycle. (See Figure 2.) CPD is related to ICCD dynamic operating current by the exprssion : ICCD=CPD・VCC・fIN+ICC AC Loading and Waveforms VCC t r =3ns OUTPUT INPUT CL t f =3ns RL INPUT tw CL includes load and stray capacitance Input PRR=1.0MHz ; t w =500ns VCC 90% 50% 10% GND t PLH t PHL FIGURE 1. AC Test Circuit VOH Out of Phase OUTPUT VCC 50% t PLH 50% VOL t PHL VOH A In Phase OUTPUT 50% 50% VOL INPUT FIGURE 3. AC Waveforms Input=AC Waveform ; t r =tf =1.8ns PRR=10MHz ; Duty Cycle=50% FIGURE 2. I CCD Test Circuit 2002. 5. 13 Revision No : 0 3/3